Abstract
The method has been developed for coating of a profiled Si surface with a SiC lay-er, which completely preserves its original morphology of the Si surface. The SiC synthesis conditions are determined under which the initial Si surface profile is transformed into a profile coated with a SiC layer without geometric distortions. It has been experimentally proved that the critical synthesis temperature at which this coating is formed is a temperature equal to 1050ºC.
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