A new method for creating nanoprofiled epitaxial silicon carbide surfaces on silicon

Abstract

In the presented work, the method of substitution of atoms was used to form an epitaxial nanostructured profiled SiC layer with a given geometry on a Si crystal. The found conditions for the synthesis of the SiC layer with the initial geometry and morphology of the Si surface preserve the initial state, covering layered SiC, completely repeating the profile of the initial Si surface.