Abstract

Reaction of Si(111) surface with saturated hydrocarbon such as methane (CH4) and ethane (C2H6) was carried out in a gas source molecular beam epitaxy (GSMBE). After carbonization, structures formed on the surface were observed by in situ reflection high‐energy electron diffraction (RHEED). Structures transition formed on the surface were 7×7, δ‐7×7, 1×1, and SiC structures. In the case of CH4, the Si surfaces were carbonized at 800 °C for 120 min (7.2×104 L) with a W‐filament of 2800 °C, and SiC layers were obtained. In the case of C2H6, the mixture of 7×7 and SiC structure was observed. Decomposition of hydrocarbon was characterized in quadrupole mass spectroscopy (QMS) measurements. An atomic force microscopy (AFM) image of the mixture of 7×7 and SiC shows a wandering shape. Whereas, the SiC layer shows a regular step. This result seems to be related to the different in the amount of CH3 molecules on the surface.

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