Abstract
The method has been developed for coating of a profiled Si surface with a SiC lay-er, which completely preserves its original morphology of the Si surface. The SiC synthesis conditions are determined under which the initial Si surface profile is transformed into a profile coated with a SiC layer without geometric distortions. It has been experimentally proved that the critical synthesis temperature at which this coating is formed is a temperature equal to 1050ºC.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
