Abstract
The aim of this study was to analyse the energy indices of pulse semiconductor converters, including efficiency as an important characteristic of their operation. This aim was achieved through the use of the simulation modelling methods in the MATLAB 7.5 Simulink environment. In particular, blocks from the SimPowerSystem library were used. The authors developed the models of semiconductor converters with pulse-width modulation having a single power switch on the IGBT type transistor, coupled with a semiconductor converter with pulse-frequency modulation having four power switches on the permanently-open SCR type thyristors. The operation accuracy of the models was confirmed in a series of experimental studies carried out on the laboratory mock-ups of pulse converters implemented in the power electronics laboratory of the Department of Electric Drive and Electrical Transport. This article presents the developed models of semiconductor converters with pulse-width and pulse-frequency modulation. The dynamic and static characteristics of pulse semiconductor converters are determined. An analysis of the obtained static characteristics of pulse converter diagrams showed that the stiffness of output characteristics of the converter with pulse-frequency modulation is higher than that of a converter with pulse-width modulation. The calculation results of the efficiency of pulse semiconductor converters conducted on the basis of the analysis of static output characteristics presume that the efficiency of the semiconductor converter with pulse-frequency modulation is more than one percent higher than the efficiency of a semiconductor converter with pulse-width modulation. The developed models of converters with pulse-width and pulse-frequency modulation can be used for studies of DC electric drive angular velocity controls.
Published Version
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