Abstract
Quantum dots (QDs) of Cds, PbS, and InSb semiconductors in a multi-grain layer of planar-edge microstructure were studied. A model of the ordered arrangement of CT in the micro-gap structure and the flow of current along the lines of parallel arrangement of QD is proposed. Electronic transport at low voltage values (less than 8 V) is determined by thermal and tunnel emission from the QD into the gap, at high values - by the charge restriction in the QD according to the Coulomb block model. A strong influence of IR and UV radiation on the VAC was found.
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