Abstract
Quantum dots (QDs) of CdSe, PbS, and InSb semiconductors in a multigrain layer of a planar-end microstructure have been studied. A model of an ordered QDs arrangement in a micron gap of the structure and a current flow along the lines of their series-parallel arrangement are considered. At low voltages (less than 8 V), electron transport is determined by thermal and tunnel emission from QDs into the gap, while at high voltages it is determined by charge restriction in QDs according to the model of Coulomb blockade. A strong effect of radiation with IR and UV spectra on the current–voltage characteristics has been found.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
