Double-crystal X-ray Rocking Curve Research Articles

Improvement of crystallinity of CdZnTe epilayers on GaSb substrates by ZnTe buffer layer

Thick CdZnTe epitaxial film is a promising alternative for X-ray detectors, especially in the case of large-area imaging application. One of the key issues in growing thick heteroepitaxial film with high crystallinity is to reduce the mismatch dislocations that appear at the interface between CdZnTe epilayer and the substrate. In this paper, we prepared CdZnTe films without and with ZnTe buffer layers on GaSb (001) substrates by the closed space sublimation. All preparation conditions for ZnTe buffer layers, CdZnTe epilayers on ZnTe buffers and GaSb substrates, as well as the pretreatment of GaSb surface have been optimized through tremendous experiments. The results of electron backscatter diffraction and transmission electron microscope observation prove that ZnTe buffer layers suppress (1‾1‾1)M twins extending from GaSb. The deposition temperature for inserting ZnTe buffer about 495 K is optimized for getting smooth ZnTe surface, on which high crystalline quality CdZnTe epilayer with a narrower full-width at half-maximum (85 arcsec) of double crystal X-ray rocking curve for (004) reflection and lower intensity ratio IDcomplex/I(D0, h) of low-temperature photoluminescence spectroscopy were produced.

HiPIMS-grown AlN buffer for threading dislocation reduction in DC-magnetron sputtered GaN epifilm on sapphire substrate

Gallium nitride (GaN) epitaxial films on sapphire (Al2O3) substrates have been grown using reactive magnetron sputter epitaxy with a liquid Ga target. Threading dislocations density (TDD) of sputtered GaN films was reduced by using an inserted high-quality aluminum nitride (AlN) buffer layer grown by reactive high power impulse magnetron sputtering (R-HiPIMS) in a gas mixture of Ar and N2. After optimizing the Ar/N2 pressure ratio and deposition power, a high-quality AlN film exhibiting a narrow full-width at half-maximum (FWHM) value of the double-crystal x-ray rocking curve (DCXRC) of the AlN(0002) peak of 0.086° was obtained by R-HiPIMS. The mechanism giving rise the observed quality improvement is attributed to the enhancement of kinetic energy of the adatoms in the deposition process when operated in a transition mode. With the inserted HiPIMS-AlN as a buffer layer for direct current magnetron sputtering (DCMS) GaN growth, the FWHM values of GaN(0002) and (10 1‾ 1) XRC decrease from 0.321° to 0.087° and from 0.596° to 0.562°, compared to the direct growth of GaN on sapphire, respectively. An order of magnitude reduction from 2.7 × 109 cm−2 to 2.0 × 108 cm−2 of screw-type TDD calculated from the FWHM of the XRC data using the inserted HiPIMS-AlN buffer layer demonstrates the improvement of crystal quality of GaN. The result of TDD reduction using the HiPIMS-AlN buffer was also verified by weak beam dark-field (WBDF) cross-sectional transmission electron microscopy (TEM).

Structural properties of MBE-grown CdTe (133)B buffer layers on GaAs (211)B substrates with CdZnTe/CdTe superlattice-based dislocation filtering layers

The ever-present demand for high-performance HgCdTe infrared detectors with larger array size and lower cost than currently available technologies based on lattice-matched CdZnTe (211)B substrates has fuelled research into heteroepitaxial growth of HgCdTe and CdTe buffer layers on lattice-mismatched alternative substrates with a (211)B orientation. Driven by the large lattice mismatch, the heteroepitaxial growth of (Hg)CdTe can result in (133)B-orientated material, which, however, has been less explored in comparison to (211)B-oriented growth. Herein, we report on the structural properties of heteroepitaxially grown single-crystal II–VI CdTe (133)B-oriented buffer layers on III–V GaAs (211)B substrates. Azimuthal-dependent x-ray double-crystal rocking curve measurements for the CdTe buffer layers show that the full-width at half-maximum value obtained along the GaAs [1¯11] direction is narrower than that obtained along the GaAs [011¯] direction, which is presumably related to the in-plane anisotropic structural characteristics of the grown CdTe layers. By incorporating strained CdZnTe/CdTe superlattice-based dislocation filtering layers (DFLs), a significant improvement in material quality has been achieved in (133)B-orientated CdTe buffer layers, including a reduced etch pit density in the low-105 cm−2 range and improved surface roughness. These results indicate that the CdTe (133)B DFL buffer layer process is a feasible approach for growing high-quality CdTe and HgCdTe materials on large-area, low-cost alternative substrates.

Defect Engineering in MBE-Grown CdTe Buffer Layers on GaAs (211)B Substrates

Demand for high-performance HgCdTe infrared detectors with larger array size and lower cost has fuelled the heteroepitaxial growth of HgCdTe on CdTe buffer layers on lattice-mismatched alternative substrates such as Si, Ge, GaAs and GaSb. However, the resulting high threading dislocation (TD) density in HgCdTe/CdTe limits their ultimate application. Herein, strained CdZnTe/CdTe superlattice layers have been used as dislocation filtering layers (DFL) to reduce the TDs in CdTe buffer layers grown on GaAs (211)B substrates (14.4% lattice-mismatch) by molecular beam epitaxy (MBE). Cross-sectional microstructure characterization indicates that the DFLs suppress the propagation of TDs. For optimal Zn content combined with thermal annealing, the DFLs effectively reduce the defect density of the upper-most CdTe layer from low-107 cm−2 to the critical level of below 106 cm−2. In comparison to conventional buffer CdTe layers, the in-plane lattice of the CdTe layers in/near the DFL region is compressively strained, leading to a spread in x-ray double-crystal rocking curve full-width at half-maximum values but better in-plane lattice-matching with HgCdTe. The combined advantages of lower dislocation density and better lattice-matching with HgCdTe indicate that the DFL approach is a promising path towards achieving heteroepitaxy of high-quality HgCdTe on large-area lattice-mismatched substrates for fabricating next-generation infrared detectors.

Non-invasive and non-destructive characterization of MBE-grown CdZnTe/CdTe superlattice-based dislocation filtering layers

We report on the structural and optical properties of heteroepitaxial II–VI CdTe (211)B buffer layers with strained CdZnTe/CdTe superlattice layers, investigated by employing non-destructive methods including high-resolution x-ray diffraction, cathodoluminescence, and photoluminescence spectroscopy. X-ray diffraction reciprocal space mapping measurements revealed that the superlattice layers are coherently strained, leading to a spread in x-ray double-crystal rocking curve full-width at half-maximum values but better in-plane lattice-matching with HgCdTe. Both cross-sectional cathodoluminescence and photoluminescence measurements confirm the coherent growth of superlattice layers and their dislocation filtering effects. Both these techniques in CdTe layers are found to be well correlated with the dislocation density as determined by etch pit density measurements. The results indicate the potential of these non-destructive methods to be further developed into general-purpose techniques capable of characterizing the defect evolution in semiconductor heteroepitaxy.

Preparation of Cd0.8Zn0.2Te/Cd0.5Zn0.5Te/n+-GaAs thick film radiation detectors by close spaced sublimation

High quality Cd0.8Zn0.2Te epitaxial films with a Cd0.5Zn0.5Te buffer layer on n+-GaAs(001) substrates were prepared using a modified close spaced sublimation (CSS) furnace. The effects of the Cd0.5Zn0.5Te buffer layer on crystalline quality and electric properties on Cd0.8Zn0.2Te films were studied using double crystal X-ray rocking curve (DCXRC), atomic force microscope (AFM), scanning electron microscope (SEM), current-voltage (I–V) measurements, and energy spectra tests. The Cd0.5Zn0.5Te buffer layer improved the crystalline quality of a thinner Cd0.8Zn0.2Te film (2 μm) but had less effect on a thick Cd0.8Zn0.2Te film (200 μm). The I–V results showed that the electron injection from n+-GaAs to the Cd0.8Zn0.2Te film can be restrained by the Cd0.5Zn0.5Te buffer layer. Meanwhile, the existing of the Cd0.5Zn0.5Te buffer layer effectively reduced the electronic noise in the spectra tests. Consequently, the modified multi-layer film detector with the Au/Cd0.8Zn0.2Te/Cd0.5Zn0.5Te/n + -GaAs/Au structure showed a considerable resolution of approximately 18% for 241Am@59.5 KeV γ-ray.

Epitaxial characteristics of MBE-grown ZnTe thin films on GaAs (211)B substrates

Highly crystalline ZnTe thin films were grown on GaAs (211)B substrates by molecular beam epitaxy (MBE) for potential applications such as MCT detectors and optoelectronic devices. We investigated the effects of Te to Zn (VI/II) flux ratio on the quality of ZnTe films in terms of crystal orientation, elemental composition, surface roughness, and dislocation density. Atomic concentrations of Zn, Te, and oxygen complexes due to oxygen contamination on the film surfaces were analyzed by X-ray photoelectron spectroscopy. X-ray double crystal rocking curve full width half maximum (FWHM) of ZnTe (422) peak was observed as 233 arcseconds for a 1.66 μm thick film, which indicates high crystallinity. Wet chemical etching was applied to the films to quantify the crystal quality by calculating etch pit densities (EPD) from scanning electron microscope images. A very low EPD value of 1.7 × 107 cm−2 was measured. Additionally, the root mean square roughness values, obtained from atomic force microscopy topography images were in the range of 10–25 nm. These values were supported by FWHM values of red green blue color intensity histograms obtained from Nomarski Microscope images. The results of our analyses indicate that the VI/II flux ratios of 4 and 4.5 produce the best quality ZnTe films on GaAs (211)B substrates.

Improvement of crystalline quality of CdZnTe epilayers on GaAs(001) substrates with a two-step growth by Close Spaced Sublimation

A two-step growth process of CdZnTe(001) epilayers on GaAs(001) substrates by Close Spaced Sublimation (CSS) is proposed. The first step, or a so-called pre-growth at low temperature of 350 °C generates more compact nucleation layer than the second step growth at 430 °C, which is more efficient for accelerating grain coalescence and annihilation of defect. Both the double crystal X-ray rocking curve (DCXRC) and the photoluminescence (PL) results prove that CdZnTe film with the best crystalline quality is obtained with the combination of the first step growth at 350 °C and the second growth at 430 °C. Increasing the second step growth temperature from 430 °C to 530 °C and 600 °C deteriorate films crystalline quality due to the increase in thermal stress and Zn content. Current-voltage (IV) measurement and alpha-particle response test indicate that better crystalline quality in CZT film leads to both higher resistivity and better carrier transport property.

Optimization of the MBE growth of metastable zinc blende MnS on GaAs (1 0 0) substrates using ZnS as sulphur source

MnS has been grown by molecular beam epitaxy in the metastable zinc blende (ZB) crystal structure on GaAs (1 0 0) substrates using ZnS as a sulphur source. MnS layers were grown over a wide range of growth conditions by varying the growth temperature from 220 °C to 300 °C and ZnS:Mn flux ratio from 5 to 20. Double-crystal X-ray rocking curves were used to determine the crystallinity and residual zinc content in the layers. This allowed a phase diagram to be produced for ZB MnS giving zinc incorporation as function of the growth temperature and the ZnS:Mn beam flux ratio. In turn, this allowed an optimum growth region to be identified at a growth temperature 240 °C and ZnS:Mn flux ratio 6 where ZB MnS with less than 1% residual zinc incorporation were obtained. Under these optimum growth conditions the maximum ZB MnS layer thickness obtained was double that obtained in previous studies, with layers up to 250 nm thick produced.

Formation and magnetic properties of InFeP:Ag nanorods fabricated with noble metal Ag using an ion milling method

The formation, including the density and height of the InFeP:Ag nanorods doped with noble metal Ag using an ion milling method, was preponderantly determined from transmission electron microscopy and x-ray diffraction analyses. We investigate, in particular, the enhanced ferromagnetism of the well-aligned InFeP:Ag nanorods. Auger electron spectroscopy and x-ray photoelectron spectroscopy measurements were carried out in order to investigate the incorporation of Ag and to verify the local chemical bonding of the InFeP:Ag nanorods. The variation of FWHM for the double-crystal x-ray rocking curve and triple-axis diffraction peaks demonstrates that noble metal Ag is incorporated into the InFeP:Ag nanorods. The noticeable ferromagnetic signature (M-H curve) of the InFeP:Ag nanorods is observed and Tc persists up to almost 350 K (3.9 × 10−4 emu g−1), as determined by temperature-dependence magnetization (M-T curve) measurements. This study suggests that the InFeP:Ag nanorods should be a potential candidate for the application of spintronic devices.

Structural defects of GaN deposited on (111) Si with Gd2O3-related buffer layers

The structural defects of GaN deposited on (111) Si with Gd2O3-related rare earth oxide buffer layers were investigated using a double-crystal x-ray rocking curve (DCXRC), high resolution transmission electron microscopy (HRTEM). By comparing the DCXRC signals of (11¯02)GaN and (12¯12)GaN asymmetric planes and (0002)GaN symmetric plane, respectively, it was found that most of the threading dislocations (TDs) in GaN of the GaN on (111) Si using Gd2O3 or Er2O3/Gd2O3 buffer layer are type a TDs in nature. Based on the results of DCXRC studies, it is believed that the full-width at half maxima of the DCXRC signals of (11¯02)GaN and (12¯12)GaN asymmetric planes are primarily due to the contributions of the 1/3⟨12¯10⟩GaN components of the Burgers vectors of type a and type c + a TDs on the interplanar spacing distortions of (11¯02)GaN and (12¯12)GaN planes in GaN of the GaN/Er2O3/Gd2O3/(111) Si samples. HRTEM observations also revealed the presence of extrinsic stacking faults and Frankel partial dislocations in GaN of the GaN on the (111) Si sample with Gd2O3 or Er2O3/Gd2O3 buffer layer.

Characterization of (211) and (100) CdTe Layers Grown on Si Substrates by Metalorganic Vapor-Phase Epitaxy

Single-crystal (211) and (100) CdTe layers have been grown by metalorganic vapor-phase epitaxy using the same condition on (211) and (100) Si substrates, respectively. Prior to the growth, substrates of both orientations were pretreated using the same pretreatment procedure. The crystal qualities of the grown layers were evaluated by full-width at half-maximum values of double-crystal x-ray rocking curves, and photoluminescence spectra at 4.2 K. (211) CdTe layers showed better crystallinity than (100) layers. The crystal quality of the (100) CdTe layers was also compared with that of layers grown on an epitaxial (100) GaAs layer on Si substrate. The results suggest that (100) CdTe layers with improved crystal quality could be obtained by optimizing the procedure of the Si substrates.

Molecular beam epitaxial growth and optical properties of the CdTe thin films on highly mismatched SrTiO3 substrates

High-quality (111)-orientated CdTe thin films are grown epitaxially on SrTiO3 (001) substrates by molecular beam epitaxy (MBE). The evolution of epitaxial growth was in-situ monitored by reflection high energy electron diffraction. The surface morphologies of the CdTe epitaxial layers (CTELs) are characterized by atomic force microscope, and atomic flat surface is confirmed as the thickness of the CTELs is below ∼40 nm. Three types of X-ray diffraction, including single crystal ω-2θ scan, double crystal X-ray rocking curve and φ-scan, are performed to characterize the structural quality of the CTELs. A full width at half maximum of ∼110 arcsec is yielded when the thickness of the CTELs is beyond ∼100 nm supported by the X-ray rocking curve. And φ-scan illustrates the appearance of four types of domains in the CTELs. Finally, direct band transition is determined, and the temperature dependent transmittance spectra exhibit that the optical band gap decreases from 1.581 eV to 1.503 eV with the temperature from 10 K to 300 K because of the electron-phonon interaction and the lattice thermal expansion.

Development and fabrication of extended short wavelength infrared HgCdTe sensors grown on CdTe/Si substrates by molecular beam epitaxy

The development and fabrication of extended short-wavelength infrared (SWIR) HgCdTe (MCT) sensors grown on CdTe/Si substrates is reported. The MCT epilayers were grown on CdTe/Si substrates by molecular beam epitaxy (MBE). The epilayers were evaluated using Fourier transform infrared spectroscopy (FTIR), X-ray double crystal rocking curve (DCRC), Van der Pauw Hall measurements, dislocation defect–decoration etching and Nomarski microscopy. The FTIR analysis revealed a cutoff wavelength of 2.25μm at 300K which corresponds to a cadmium composition of 47%. As-grown epilayers have void defect densities less than 103cm−2 and etch pit densities of ∼1×107cm−2. The Hall mobilities of annealed MCT samples are on the order of 1500cm2/Vs and have carrier concentrations of ∼1×1016cm−3 at 300K. Samples were doped in situ with indium (donor) and ion-implanted with arsenic (acceptor) to fabricate p–n diodes with sizes ranging from 15μm to 250μm diameter. We present the results and analysis of temperature dependent current–voltage (I–V) and quantum efficiency/responsivity measurements on the p–n diodes. In our analysis, we found that the I–V characteristics of small devices were dominated by shunt currents and quantum efficiency is limited by Shockley–Read–Hall (SRH) mechanisms.

High-Efficiency and Crack-Free InGaN-Based LEDs on a 6-inch Si (111) Substrate With a Composite Buffer Layer Structure and Quaternary Superlattices Electron-Blocking Layers

In this paper, a composite buffer layer structure (CBLS) with multiple AlGaN layers and grading of Al composition/u-GaN1/(AlN/GaN) superlattices/u-GaN2 and InAlGaN/AlGaN quaternary superlattices electron-blocking layers (QSLs-EBLs) are introduced into the epitaxial growth of InGaN-based light-emitting diodes (LEDs) on 6-inch Si (111) substrates to suppress cracking and improve the crystalline quality and emission efficiency. The effect of CBLS and QSLs-EBL on the crystalline quality and emission efficiency of InGaN-based LEDs on Si substrates was studied in detail. Optical microscopic images revealed the absence of cracks and Ga melt-back etching. The atomic force microscopy images exhibited that the root-mean-square value of the surface morphology was only 0.82 nm. The full widths at half maxima of the (0002) and (1012) reflections in the double crystal X-ray rocking curve were ~330 and 450 respectively. The total threading dislocation density, revealed by transmission electron microscopy, was <; 6× 108 cm-2. From the material characterizations, described above, blue and white LEDs emitters were fabricated using the epiwafers of InGaN-based LEDs on 6-inch Si substrates. The blue LEDs emitter that comprised blue LEDs chip and clear lenses had an emission power of 490 mW at 350 mA, a wall-plug efficiency of 45% at 350 mA, and an efficiency droop of 80%. The white LEDs emitter that comprised blue LEDs chip and yellow phosphor had an emission efficiency of ~110 lm/W at 350 mA and an efficiency droop of 78%. These results imply that the use of a CBLS and QSLs-EBL was found to be very simple and effective in fabricating high-efficiency InGaN-based LEDs on Si for solid-state lighting applications.

Bulk Growth of CdZnTe: Quality Improvement and Size Increase

We report the bulk growth of single-crystal CdZnTe and characterization of material associated with large-area wafers produced from the CdZnTe ingots. Our experimental vertical gradient freeze set-up enables accurate detection of the beginning and end of the crystallization step by careful monitoring of the thermal cycle. Single crystal, (111)-oriented ingots with a diameter of 80 mm were routinely obtained without grain boundary or twin. The size of the CdZnTe ingots was extended to 115 mm in diameter, enabling production of large-dimension substrates suitable for infrared focal-plane arrays with megapixel-resolution. Crystal quality was investigated by double-crystal x-ray rocking curve mapping and by chemical revelation of etch pits. Typical mean values for the rocking curve full width at half maximum were in the range 20–40 arcs. Evaluation of etch pit density on the (111)Te face furnished values in the low 104/cm2.

Solid-state grain growth of garnet single crystals of complex composition

Various (Nd-doped (Y,Gd,La,Lu)3(Sc,Al)5O12) garnets were reproducibly grown from a Nd-doped (Y,Gd,La,Lu)3(Sc,Al)5O12 polycrystalline precursor. Single crystals were grown through controlled abnormal grain growth at temperatures between 1750°C and 1850°C. Nd-doped (Y,Gd,La,Lu)3(Sc,Al)5O12 powder was prepared using the co-precipitation method, and single crystals were fabricated by the conversion of polycrystalline material. The phase identification of the specimens was performed using XRD and X-ray double crystal rocking curve (DCRC) analysis. The absorption spectra, fluorescence spectra, and fluorescence lifetimes of samples excited using an 808nm laser diode (LD) were also measured. The fluorescence lifetime of Nd-doped (Y,Gd,La,Lu)3(Sc,Al)5O12 single crystals is longer than that of Nd:YAG; a prolonged fluorescence lifetime helps to achieve a high laser output power. In short, we can fabricate complex mixed-garnet single crystals using the solid-state single-crystal conversion (SCC) method.

Growth and Electrical Properties of ZnAl2Se4 Single Crystal Thin Film by Hot Wall Epitaxy

A stoichiometric mixture of evaporating materials for <TEX>$ZnAl_2Se_4$</TEX> single-crystal thin films was prepared in a horizontal electric furnace. These <TEX>$ZnAl_2Se_4$</TEX> polycrystals had a defect chalcopyrite structure, and its lattice constants were <TEX>$a_0=5.5563{\AA}$</TEX> and <TEX>$c_0=10.8897{\AA}$</TEX>.To obtain a single-crystal thin film, mixed <TEX>$ZnAl_2Se_4$</TEX> crystal was deposited on the thoroughly etched semi-insulating GaAs(100) substrate by a hot wall epitaxy (HWE) system. The source and the substrate temperatures were <TEX>$620^{\circ}C$</TEX> and <TEX>$400^{\circ}C$</TEX>, respectively. The crystalline structure of the single-crystal thin film was investigated by using a double crystal X-ray rocking curve and X-ray diffraction <TEX>${\omega}-2{\theta}$</TEX> scans. The carrier density and mobility of the <TEX>$ZnAl_2Se_4$</TEX> single-crystal thin film were <TEX>$8.23{\times}10^{16}cm^{-3}$</TEX> and <TEX>$287m^2/vs$</TEX> at 293 K, respectively. To identify the band gap energy, the optical absorption spectra of the <TEX>$ZnAl_2Se_4$</TEX> single-crystal thin film was investigated in the temperature region of 10-293 K. The temperature dependence of the direct optical energy gap is well presented by Varshni's relation: <TEX>$E_g(T)=E_g(0)-({\alpha}T^2/T+{\beta})$</TEX>. The constants of Varshni's equation had the values of <TEX>$E_g(0)=3.5269eV$</TEX>, <TEX>${\alpha}=2.03{\times}10^{-3}eV/K$</TEX> and <TEX>${\beta}=501.9K$</TEX> for the <TEX>$ZnAl_2Se_4$</TEX> single-crystal thin film. The crystal field and the spin-orbit splitting energies for the valence band of the <TEX>$ZnAl_2Se_4$</TEX> were estimated to be 109.5 meV and 124.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that splitting of the <TEX>${\Delta}so$</TEX> definitely exists in the <TEX>${\Gamma}_5$</TEX> states of the valence band of the <TEX>$ZnAl_2Se_4/GaAs$</TEX> epilayer. The three photocurrent peaks observed at 10 K are ascribed to the <TEX>$A_1$</TEX>-, <TEX>$B_1$</TEX>-exciton for n = 1 and <TEX>$C_{21}$</TEX>-exciton peaks for n = 21.

Growth by the Multi-tube Physical Vapour Transport method and characterisation of bulk (Cd,Zn)Te

Growth by the Multi-tube Physical Vapour Transport technique and characterisation of bulk (Cd,Zn)Te is described. The crystalline perfection and uniformity of zinc content have been mapped by infra-red transmission and microscopy, X-ray diffraction and photoluminescence. X-ray double crystal rocking curve full widths at half maximum as low as 43in have been obtained and a mean zinc mole fraction of 0.03 has been found to vary by less than ±0.003 over the diameter of a 50mm boule. The material exhibits a resistivity in the 2×109Ωcm range and planar devices fabricated from this material have shown electron mobility lifetime products of 4.07×10−3cm2V−1.

Properties of CdMnTe Single Crystal Used in Nuclear Radiation Detectors

The Cd1-xMnxTe crystal is believed to be a good candidate to compete with Cd1-xMnxTe in the X-ray and γ-ray detector application. In this paper, Indium (In) doped Cd0.8Mn0.2Te (CdMnTe) ingots were grown by the modified Vertical Bridgman method. The as-grown crystals were characterized using Near-Infrared (NIR) transmission spectrum mapping of composition, X-ray double-crystal rocking curve measurement, I-V measurement and 241Am gamma rays radiation measurement. The Mn composition extracted from the NIR spectra at different axial and radial distances of the 30×40×2 mm3 CdMnTe wafers shown that the Mn concentration in the range of 0.19430.0008 to 0.2020.0025 mole fraction. The FWHM values of the X-ray rocking curves are of 40-80 arc sec, indicating a high crystalline perfection. The resistivity of the wafers is (2-3) ×1010Ω.cm. The CdMnTe planar detector irradiated by 241Am source shows the energy resolution of 8.5%.