Abstract
We report the bulk growth of single-crystal CdZnTe and characterization of material associated with large-area wafers produced from the CdZnTe ingots. Our experimental vertical gradient freeze set-up enables accurate detection of the beginning and end of the crystallization step by careful monitoring of the thermal cycle. Single crystal, (111)-oriented ingots with a diameter of 80 mm were routinely obtained without grain boundary or twin. The size of the CdZnTe ingots was extended to 115 mm in diameter, enabling production of large-dimension substrates suitable for infrared focal-plane arrays with megapixel-resolution. Crystal quality was investigated by double-crystal x-ray rocking curve mapping and by chemical revelation of etch pits. Typical mean values for the rocking curve full width at half maximum were in the range 20–40 arcs. Evaluation of etch pit density on the (111)Te face furnished values in the low 104/cm2.
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