Tuning Voltage Research Articles

A graphene-based THz selective absorber with absorptivity 95 % and wide-range electrical tunability

A growing adoption of Terahertz (THz) frequency across various applications is witnessed in the recent years. This specific frequency range is said to yield a breakthrough in high-speed electronics and communications, besides its significant role in the medical field regarding scanning and treatment. As frequency absorbers are one of the common blocks in the mentioned applications, they were the focus of many research work. In this paper, we present a theoretical model for a selective THz frequency absorber that has more than 90 % absorptivity and can reach 95 % and near unity absorptivity at some frequencies. The structure is based on monolayers of nanoribbons of graphene, MoS2, and phosphorene. The utilization of the surface plasmon oscillations of these two-dimensional (2D) materials, in addition to the impedance matching, is employed to achieve maximum absorptivity. The structure has an electrically tunable selective frequency from 1.3 THz to 10 THz that nearly covers the whole THz range, and a bandwidth ranging from 0.9 THz to 1.3 THz. Electrical tunability is done through varying the applied voltage on the MoS2/graphene heterostructure (0.2 V ∼ 5 V) based on the tunable conductivity of graphene. In addition to the voltage tunability of the design, the absorption frequency is also swept by varying the nanoribbons widths (20 nm ∼ 160 nm). The proposed design surpasses previous ones by its simple structure and high absorption through the entire THz range, besides its low cost of fabrication. The structure is ultrathin (∼10 nm) that it can fit in ultrathin electronics. It has a relatively small bandwidth compared to previous work, that represents the basis for narrowband absorbers. The structure is simulated using the finite element method (FEM) and verified using the transmission line circuit theory which demonstrated the validity of the structure for higher frequency ranges. The possibility of future synthesis is also discussed.

Design and performance of the field cage for the XENONnT experiment

The precision in reconstructing events detected in a dual-phase time projection chamber depends on an homogeneous and well understood electric field within the liquid target. In the XENONnT TPC the field homogeneity is achieved through a double-array field cage, consisting of two nested arrays of field shaping rings connected by an easily accessible resistor chain. Rather than being connected to the gate electrode, the topmost field shaping ring is independently biased, adding a degree of freedom to tune the electric field during operation. Two-dimensional finite element simulations were used to optimize the field cage, as well as its operation. Simulation results were compared to 83mKr\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${}^{83\ extrm{m}}\\hbox {Kr }$$\\end{document}calibration data. This comparison indicates an accumulation of charge on the panels of the TPC which is constant over time, as no evolution of the reconstructed position distribution of events is observed. The simulated electric field was then used to correct the charge signal for the field dependence of the charge yield. This correction resolves the inconsistent measurement of the drift electron lifetime when using different calibrations sources and different field cage tuning voltages.

Investigation of Terp-Pyr/p-Si diode using complex impedance spectroscopy depending on measurement temperatures and frequencies

A unique Al/Terp-Pyr/p-Si/Al diode structure that has not before been presented was introduced in this paper. Utilizing capacitance-conductance-frequency (C-G-f) characteristics in the frequency range of 20 Hz− 1.5 MHz for four temperatures of 300 K, 325 K, 350 K, and 375 K, admittance analysis was carried out to disclose the impedance and dielectric properties of the diode. The appearance of interface states at the Terp-Pyr/p-Si interface leads to an increase in capacitance values at low frequencies. Using complex impedance spectroscopy, the impedance characteristics of the Al/ Terp-Pyr/p-Si/Al Schottky diode were examined. The fabricated diode’s dielectric, modulus, and ac conductivity properties were investigated in the same frequency and temperature range. It has been revealed that while ϵ′\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${\\epsilon }^{{\\prime }}$$\\end{document} decreases up to high frequencies for all temperatures, it grows with temperature in the low-frequency zone. It becomes apparent that while the real component (M’) of modulus grows for all temperatures from low to high frequencies, it decreases at high frequencies as temperature rises. remarkably adjustable temperature, voltage, and frequency tuning of the dielectric constants (ϵ′,ϵ′′)\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$({\\epsilon }^{{\\prime }},{{\\epsilon }^{{\\prime }}}^{{\\prime }})$$\\end{document} and dielectric loss tangent (tanδ). Additionally, the equivalent circuit of the Al/ Terp-Pyr/p-Si/Al Schottky diode and Cole-Cole diagrams were explored.

Voltage tuning multi-photon processes with a graphene-based Tamm structure

Tamm plasmon modes are used to realize the modulation of multi-photon processes. Through effectively combining the rear-earth doped layer and a monolayer graphene in a Tamm structure, the emission of multi-photon processes can be tuned by the applied voltage. Results show that the proposed structure has a narrow absorption peak near 1550 nm, which is corresponding to the excitation source wavelength of the multi-photon processes. Importantly, the emission intensity of multi-photon processes can be tuned from 1 fold to ∼10.1 fold when we changed the applied voltage. Meanwhile, the emission color of the multi-photon processes can be tuned from yellow to green via adjusting the applied voltage. The proposed voltage tuning approach may be promoted to all kinds of nonlinear optical phenomenons, like Stimulated Raman Scattering, optical mixing and photorefractive effect.

Trans-reflective tunable color filter using electro-optic material

This research presents designing a tunable trans-reflective color filter utilizing Barium Titanate (BTO) and optimizing its performance by applying an artificial intelligence (AI) based inverse design model. The AI-based color filter design process is efficient and minimizes design challenges. The AI model comprising two sub-blocks is trained using a dataset that correlates geometrical parameters, refractive index, and input voltage variations with desired color outputs to precisely control the color filter's performance. The first is the parametric optimization block (POB), which employs two deep neural networks (DNNs) in the forward and inverse directions to achieve the optimized geometry of the proposed meta-atoms. Once the optimal parameters are completed, the next block, i.e., voltage tuning block (VTB), is employed to map specific colors onto the refractive index and the applied voltage of the BTO layer. In this way, by changing the voltage of the BTO layer, we can leverage BTO's tunable optical properties, which allow for a broad range of vibrant and customizable colors. The optimized color filter demonstrates enhanced tunability and efficiency, opening up new possibilities for applications in displays and imaging devices.

A self-centering and stiffness-controlled MEMS accelerometer

This paper presents a high-performance MEMS accelerometer with a DC/AC electrostatic stiffness tuning capability based on double-sided parallel plates (DSPPs). DC and AC electrostatic tuning enable the adjustment of the effective stiffness and the calibration of the geometric offset of the proof mass, respectively. A dynamical model of the proposed accelerometer was developed considering both DC/AC electrostatic tuning and the temperature effect. Based on the dynamical model, a self-centering closed loop is proposed for pulling the reference position of the force-to-rebalance (FTR) to the geometric center of DSPP. The self-centering accelerometer operates at the optimal reference position by eliminating the temperature drift of the readout circuit and nulling the net electrostatic tuning forces. The stiffness closed-loop is also incorporated to prevent the pull-in instability of the tuned low-stiffness accelerometer under a dramatic temperature variation. Real-time adjustments of the reference position and the DC tuning voltage are utilized to compensate for the residue temperature drift of the proposed accelerometer. As a result, a novel controlling approach composed of a self-centering closed loop, stiffness-closed loop, and temperature drift compensation is achieved for the accelerometer, realizing a temperature drift coefficient (TDC) of approximately 7 μg/°C and an Allan bias instability of less than 1 μg.

Fast-Locking Phase Locked Loop Dominated by SMC at VCO Voltage Tuning End

Fast-Locking Phase Locked Loop Dominated by SMC at VCO Voltage Tuning End

Noninverting Schmitt trigger circuit with electronically tunable hysteresis

This paper reports a tunable hysteresis CMOS Schmitt trigger design techniques and an investigation of new buffer-based designs. The sizing of the two feedback inverters controls the two trip points of the structure independently. By the addition of voltage tune controlled sourcing transistor, the hysteresis window can be easily changed. Moreover, the new designs are immune to the kick-back noise coming from the succeeding inverter blocks. In this work, the VT-ST proves itself more reliable regarding dynamic and leakage power consumption and propagation delay. In this work, aspect ratio of the transistors is kept as small as possible, and the hysteresis loop is varied with a tunable voltage transistor. 5000 Monte Carlo simulations reveal that the VT-ST is more reliable as ΔVLHandΔVHL are almost equal, and a small variation is observed. For the comprehensive analysis, a figure of merit for all the circuits is derived and it is 3.16× higher for the proposed VT-ST than the conventional circuit. All simulation work is handled by the cadence virtuoso tool using UMC 40 nm technology.

The Nonlinear Dynamics of a MEMS Resonator with a Triangular Tuning Comb.

The nonlinear dynamic response of a MEMS resonator with a triangular tuning comb is studied. The motion equation with dis-smooth tuning electrostatic force is derived according to Newton's second law. The analytical solution of the periodic response is obtained using the harmonic balance method and section integral method. The singularity theory is then applied to investigate the bifurcation of the periodic response of the untuned system. The transition sets on the DC-AC voltage plane dividing the planes into several persistent regions are obtained. The bifurcation diagrams' topological structures and jump phenomena corresponding to different parameter regions are analyzed. We explore the effects of tuning voltage on the response. This demonstrates that the amplitude-frequency curves present more hardening characteristics with increased tuning voltage. Many twists, bifurcation points, and unstable solutions appear, leading to complicated jump phenomena. Two bifurcation points exist on the response curves: the smooth and dis-smooth bifurcation points, with the latter occurring on the switching plane of non-uniform fingers.

Voltage tuning of photoinduced charge transfer resonances between 2,2′-bipyridine and a nanostructured silver electrode

The effect of applied electric potentials and excitation wavelengths (785, 532, 473 nm) on the Surface-Enhanced Raman scattering (SERS) of 2,2′-bipyridine (2,2′-bpy) adsorbed on a silver electrode has been analyzed on the basis of a charge transfer (CT) resonance mechanism. DFT/TD-DFT calculations performed for a simple model of surface complex (Ag2-2,2′-bpy) point out that 2,2′-bpy preferably adsorbs through both nitrogen atoms in a cis-conformation with edge-on orientation. The calculated spectra in resonance with the two first bright metal-to-molecule charge transfer electronic states (CT0;B1 and CT1;B1) account for the main experimental features: the selective enhancement of the totally symmetric modes recorded at about 1585, 1560 and 1480 cm−1 under 532 nm line, staying the 1560 cm−1 band as the most intense under 473 nm line at more negative electrode potential. The split of SERS bands recorded in the 1600, 1000 and 600 cm−1 regions point to the existence of a monodentate coordination of the cis-conformer. The calculated resonance condition up to CT0 and CT1 states is fulfilled under 532 and 488 nm excitation lines, respectively, agreeing with the behaviour of the intensity-potential profile of the bands for each excitation wavelength.

(Invited) empowering Triboelectric Nanogenerator with Functional Polymers for Environment Monitoring

Triboelectric nanogenerator (TENG) proves useful as self-powered sensor. Integration of TENG with functional polymers empowers TENG to exhibit new functionalities and stimuli responsiveness. This study describes the evaluation of spiropyran-functionalized polymer (P1) and guanidinium-functionalized polymers (2 Gdm.) as new materials for TENG, which both show tunable triboelectric output voltage in response to various environmental cues including UV irradiation, humidity change, metal ions and the presence of bacteria. Spiropyran isomerizes to merocyanine upon UV irradiation for 100s (6-8W), resulting in a decrease in output voltage from 100 V to 65 V. In addition, the output voltage is inversely proportional to the irradiation time. Noting high humidity (RH) generally limits the performance of conventional TENGs, such that the output voltage decreases as RH increases. The output voltage of P1 decreases by 48% (from 100V to 52V) and the output voltage of 2 Gdm. decreases by 85% (from 100V to 15V) as the RH changes from 25% to 88%, which is a common behavior of TENG under high humidity. In contrast, the output voltage of the UV irradiated P1 TENG increases by 30% (from 65V to 80V). Because merocyanine is capable of chelating with metal ions to form metal complexes, we also evaluate the effect of metal chelation on triboelectric voltage output. Chelation with copper(II) ions result in restoration of output voltage to ~100V, suggesting the relative position in triboelectric series can be modulated by metal complexation. For guanidinium-functionalized polymers, 2Gdm., the inherent antimicrobial properties of guanidinium side groups enables TENG to be sensitive to both gram-positive and gram-negative bacteria at a concentration of 105 CFU/mL, resulting in decreasing output voltage as bacteria concentration increases. These results demonstrate that the functionalized polymers can be used as a responsive motif to realize smart TENG systems, which exhibits sensitivity to UV irradiation, changes in humidity, and the presence of metal ions or bacteria.

Wide-range and area-selective threshold voltage tunability in ultrathin indium oxide transistors

The scaling of transistors with thinner channel thicknesses has led to a surge in research on two-dimensional (2D) and quasi-2D semiconductors. However, modulating the threshold voltage (VT) in ultrathin transistors is challenging, as traditional doping methods are not readily applicable. In this work, we introduce a optical-thermal method, combining ultraviolet (UV) illumination and oxygen annealing, to achieve broad-range VT tunability in ultrathin In2O3. This method can achieve both positive and negative VT tuning and is reversible. The modulation of sheet carrier density, which corresponds to VT shift, is comparable to that obtained using other doping and capacitive charging techniques in other ultrathin transistors, including 2D semiconductors. With the controllability of VT, we successfully demonstrate the realization of depletion-load inverter and multi-state logic devices, as well as wafer-scale VT modulation via an automated laser system, showcasing its potential for low-power circuit design and non-von Neumann computing applications.

Hybrid Quantum Systems for Higher Temperature Quantum Information Processing

The ability to operate superconducting quantum computers at higher temperatures would greatly expand their utility and range of applications. This could be achieved by increasing resonance frequencies and/or utilizing collective modes that are less noisy and more robust against decoherence. We discuss several nonlinear resonator concepts in which the roles of linear and nonlinear elements are reversed vs. the transmon. The simplest version is a nonlinear <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">LC</i> resonator with a linear superconducting inductor and a nonlinear capacitor employing a nonlinear dielectric material. Due to progress in tunable dielectrics for 6G, some ferroelectric composites may enable operation of a nonlinear dielectric – superconductor qubit at hundreds of gigahertz. Other nonlinear dielectric materials include quantum paraelectrics and charge density wave materials. These are of interest due to robust collective modes resulting from macroscopically occupied states. Other proposed nonlinear resonators employing nonlinear dielectrics include quarter- and half-wavelength resonators. Voltage tunability is a potential feature of the proposed concepts.

Tunable voltage polarity-dependent resistive switching characteristics by interface energy barrier modulation in ceria-based bilayer memristors for neuromorphic computing

Synaptic characteristics with tunable dependence on the voltage polarity are demonstrated in ceria (CeO2) and Gd-doped ceria (GDC) bilayer memristors with respect to their stacking orders. Both Pt/GDC/CeO2/Pt and Pt/CeO2/GDC/Pt memristors with different oxide stacking orders exhibit analog, linear, and symmetric synaptic weights for potentiation and depression, paired-pulse facilitation, and short- and long-term plasticity (STP and LTP, respectively). Potentiation and depression behaviors are highly linear and symmetric thanks to the stacking of more oxygen-deficient GDC layer with CeO2, which facilitates the redistribution of oxygen vacancies for analog resistance change. These memristors have opposite dependence of synaptic weight updates on the polarity of potentiation and depression voltages for the stacking order of CeO2 and GDC, which are consistently interpreted by voltage-driven energy barrier modulation at the interface between CeO2 and GDC or with Pt electrodes via oxygen vacancy redistribution. Recognition simulation with modified handwritten digits patterns using a two-layer perceptron neural network exhibits accuracy of approximately 88% with achieved dynamic range, linearity, symmetry, and precision states. These synaptic characteristics are also demonstrated in a 32 × 32 crossbar array of GDC-top memristors. This verifies the potential of bilayer memristors for application in artificial synapse networks in neuromorphic computing systems.

La-doped PMN–PT transparent ceramics with ultra-high electro-optic effect and its application in optical devices

Transparent electro-optic (EO) ceramics of La-doped 0.75Pb(Mg_1/3Nb_2/3)O₃–0.25PbTiO₃ (0.75PMN–0.25PT) were prepared successfully. High transparency of 69% in the near-infrared (IR) wavelength (1550 nm) was achieved at 2 mol% La doping, meanwhile it shows an extremely high quadratic EO coefficient of 45.4×10⁻¹⁶ m²·V⁻², which is indispensable for applications in EO devices. The distribution of a polar nanodomain structure of the samples experiences disorder–order–disorder evolution in a La doping range. It is found that a parallelly-stacked polar nanodomain structure with an easier and faster polarization switching in the 2 mol% La-doped sample suggests that an ordering distribution of polar nanoregions would be critical to inducing large EO effect, transparency, and piezoelectric response. A triple-cavity tunable optical filter (TOF) with a single transmission peak and a tuning voltage below 30 V in a tuning range of 190–197 THz was designed based on our ceramics. The work is believed to bridge the relationship among doping-engineering, EO properties, and polarization behavior, which would guide the further optimization of transparent EO ceramics.

Characterizing a Ka-Band FMCW Reflectometer

A Ka-Band ultra-fast, ultra-wide band Frequency Modulated Continuous Wave (FMCW) reflectometer to measure the plasma density profile has been designed and developed at Institute for Plasma Research (IPR). We present here the need for ultra-fast and ultra-wide frequency of operation and estimate expected beat frequencies for the instrument. Three distinct corrections are made to the obtained frequencies. Firstly, inherent non-linearity of the frequency source is removed by shifting non-linearity to the tuning voltage of the hyper-abrupt varactor tuned oscillator and then correcting mismatch of the absolute values of frequency by introducing a delay line to account for the difference in length between active and reference paths for producing the beat frequencies. Using code developed based on the short time Fourier transform we extract the beat frequency to measure various known distances and verify with our beat frequency estimations and also show that range resolution obtained is very close to the theoretical one obtained.

Compact Modeling of Process Variations in Nanosheet Complementary FET (CFET) and Circuit Performance Predictions

In this work, a semi-analytical compact model of random process fluctuations in nanosheet (NS) gate-all-around (GAA) complementary FET (CFET) is proposed, including work-function variation (WFV), line edge roughness (LER), and gate edge roughness (GER). Different from the conventional NS GAA FET, GER has a significantly different impact on NS GAA CFET, due to the additional p-type work-function (p-WF) liner for p-FET threshold voltage tuning as well as the common metal gate, and a negative correlation with p-WF thickness is introduced into GER model. The proposed model is embedded into Berkeley short-channel insulated-gate field-effect transistor model-common multi-gate (BSIM-CMG) to predict the device performance variability by HSPICE Monte Carlo (MC) simulations. Excellent agreement between stochastic TCAD and HSPICE MC simulations is demonstrated. The effect of process variations on the power-performance-area (PPA) of standard cells (SDCs) and ring oscillator (RO) circuit is predicted by the proposed model. Most of the process variations make a more than <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$-$</tex-math> </inline-formula> 10% to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$+$</tex-math> </inline-formula> 20% change in power consumption in NOR2. WFV has the greatest impact on RO PPA, making a <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$-$</tex-math> </inline-formula> 10% to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$+$</tex-math> </inline-formula> 12.3% change in power consumption. The proposed model provides a helpful guideline for the random variation-aware CFET circuit design and related technology process development.

Highly Tunable Negative Differential Resistance Device Based on Insulator-to-Metal Phase Transition of Vanadium Dioxide.

Negative differential resistance (NDR) based on the band-to-band tunneling (BTBT) mechanism has recently shown great potential in improving the performance of various electronic devices. However, the applicability of conventional BTBT-based NDR devices is restricted by their insufficient performance due to the limitations of the NDR mechanism. In this study, we develop an insulator-to-metal phase transition (IMT)-based NDR device that exploits the abrupt resistive switching of vanadium dioxide (VO2) to achieve a high peak-to-valley current ratio (PVCR) and peak current density (Jpeak) as well as controllable peak and valley voltages (Vpeak/valley). When a phase transition is induced in VO2, the effective voltage bias on the two-dimensional channel is decreased by the reduction in the VO2 resistance. Accordingly, the effective voltage adjustment induced by the IMT results in an abrupt NDR. This NDR mechanism based on the abrupt IMT results in a maximum PVCR of 71.1 through its gate voltage and VO2 threshold voltage tunability characteristics. Moreover, Vpeak/valley is easily modulated by controlling the length of VO2. In addition, a maximum Jpeak of 1.6 × 106 A/m2 is achieved through light-tunable characteristics. The proposed IMT-based NDR device is expected to contribute to the development of various NDR devices for next-generation electronics.

Threshold voltage tuning in gelatin biopolymer-gated high-performance organic field-effect transistors

Natural biopolymers have been of considerable interest in developing flexible, biocompatible and biodegradable organic electronic devices. Herein, we demonstrate gelatin biopolymer gated OFETs utilizing thermally evaporated α-sexithiophene (α-6T) and solution-processable poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene] (PBTTT-C14) as organic semiconductors (OS). The tunability of threshold voltage (VT) for the OFETs as a function of lithium-perchlorate (LP) content (% w/w) in gelatin is also explored. With the increase of LP (0% to 20% w/w) in the gelatin, VT reduces from − 5.7 V to − 1.75 V and − 2.15 V to + 0.1 V for α-6T and PBTTT-C14 based OFETs, respectively. The highest hole mobility in the saturation regime (μS) of α-6T and PBTTT-C14 is estimated as 2.0 cm2V−1s−1 and 0.1 cm2V−1s−1 respectively with the on/off ratio ∼103. It is ascribed to the efficient formation of an electric double layer (EDL) at the dielectric/organic interface. The reduction in the VT upon LP incorporation can be attributed to the additional ionic contribution of ClO4- to the EDL along with the trap density (NT) reduction at dielectric/OS interface.

Tunable Laser-Induced Voltage of Sugar for Ultrafast Ultraviolet Laser Pulse Detection

A low-cost rapid process for deep ultraviolet (UV) laser pulse detection has been proposed and experimentally realized by table sugars [such as fine white sugar (FS), granulated sugar (GS), and brown sugar (BS)]. A systematic study about laser-induced voltage (LIV) under a KrF pulsed laser irradiation was presented by tuning the applied bias ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{b}$ </tex-math></inline-formula> ), laser energy ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${E}_{\text {in}}$ </tex-math></inline-formula> ), and shunting resistance ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R}$ </tex-math></inline-formula> ) parallel to the sample. Higher <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${E}_{\text {in}}$ </tex-math></inline-formula> enhanced LIV peak magnitude ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{p}$ </tex-math></inline-formula> ), whereas the rise time and full-width at half-maximum (FWHM) were negatively correlated with <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${E}_{\text {in}}$ </tex-math></inline-formula> . FS showed higher LIV than GS due to the smaller particle size of FS than that of GS. The LIV response trace consisted of three components of fast rise, slower rise, and attenuation, which fit well by the sum of the three exponential functions. Furthermore, the LIV response time was shortened significantly by reducing <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R}$ </tex-math></inline-formula> . When a fixed <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R}$ </tex-math></inline-formula> of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$14.7 \Omega $ </tex-math></inline-formula> was applied, the LIV trace displayed a 10%–90% rising time of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\sim $ </tex-math></inline-formula> 12.2 ns and a 10%–90% falling time of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\sim $ </tex-math></inline-formula> 23.5 ns. The response time was completely limited by the laser pulse duration, indicating that the waveform of the laser pulse was detected. In addition, the specific detectivity <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${D}^{\ast} $ </tex-math></inline-formula> over <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{b}$ </tex-math></inline-formula> ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${D}^{\ast} /{V}_{b}$ </tex-math></inline-formula> ) of FS is estimated to be <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$2.67\times 10^{{7}}\,\,\text{m}^{\text {1/2}} \cdot \text{J}^{{-\text {3/2}}}$ </tex-math></inline-formula> at lower <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${E}_{\text {in}}$ </tex-math></inline-formula> (< 20 mJ), which was 38% and 84% higher than that of GS and BS. Our work provided a simple, low-cost, and fast method to detect a deep UV laser pulse with table sugar as the detector material.