Voltage Pulse Research Articles

One-Dimensional MoS2 Nanoscrolls as Miniaturized Memories.

Dimensionality of materials is closely related to their physical properties. For two-dimensional (2D) semiconductors such as monolayer molybdenum disulfide (MoS2), converting them from 2D nanosheets to one-dimensional (1D) nanoscrolls could contribute to remarkable electronic and optoelectronic properties, yet the rolling-up process still lacks sufficient controllability, which limits the development of their device applications. Herein we report a modified solvent evaporation-induced rolling process that halts at intermediate states and achieve MoS2 nanoscrolls with high yield and decent axial uniformity. The accordingly fabricated nanoscroll memories exhibit an on/off ratio of ∼104 and a retention time exceeding 103 s and can realize multilevel storage with pulsed gate voltages. Such open-end, high-curvature, and hollow 1D nanostructures provide new possibilities to manipulate the hysteresis windows and, consequently, the charge storage characteristics of nanoscale field-effect transistors, thereby holding great promise for the development of miniaturized memories.

A study of pulsed high voltage driven hollow-cathode electron beam sources through synchronous optical trigger

In this study, a pulsed, high voltage driven hollow-cathode electron beam sources through an optical trigger is designed with characteristics of simple structure, low cost, and easy triggering. To validate the new design, the characteristics of hollow-cathode discharge and electron beam characterization under pulsed high voltage drive are studied experimentally and discussed by discharge characteristics and analyses of waveform details, respectively. The validation experiments indicate that the pulsed high voltage supply significantly improves the frequency and stability of the discharge, which provides a new solution for the realization of a high-frequency, high-energy electron beam source. The peak current amplitude in the high-energy electron beam increases from 6.2 A to 79.6 A, which indicates the pulsed power mode significantly improves the electron beam performance. Besides, increasing the capacitance significantly affects the high-current, lower-energy electron beam more than the high-energy electron beam.

Pulse operation mode of inertial electrostatic plasma confinement devices

The paper discusses the operation features of the inertial electrostatic plasma confinement (IEC) devices in the pulsed high voltage mode. The pulse operation mode offers significant advantages in IEC devices, which are associated with high discharge currents that are inaccessible for continuous operating modes. However, the implementation of such operating modes is associated with a number of physical limitations and technical difficulties.A stand with an IEC chamber powered by a high-voltage pulse transformer and a unit for gas preliminary ionization in the IEC chamber has been developed. In the chamber, ions are accelerated from a background glow discharge. A study of the burning background discharge in the IEC chamber, background discharge current Ipre influence on the duration of current and voltage pulses of the main discharge and the delay between them was carried out. The results of the neutron yield measuring in an IEC chamber operating in pulsed mode are presented at a charging voltage up to 105 kV, a discharge current amplitude of several tens of amperes, a preionization current of 8 mA, and a pulse repetition rate from single to 300 Hz. A stable neutron flux with an energy of 2.5 MeV at a level of 106 neutrons/s was experimentally obtained.

State-of-charge estimation for lithium-ion batteries based on modified unscented Kalman filter using improved parameter identification

The full and single hybrid pulse power characterization (HPPC) experiments are conducted on nickel cobalt manganese (NCM) and lithium iron phosphate (LFP) batteries to obtain the accurate relationship between state of charge (SOC) and open circuit voltage (OCV). The pseudo random number generated by the RAND function is used as the initial value of the parameter identification equation for the second-order equivalent circuit model (ECM), and the parameter identification of lithium-ion batteries is achieved through least squares fitting. The unscented Kalman filter (UKF) simulation model is modified by the first order low pass filtering (FOLPF) algorithm to improve the accuracy of SOC estimation of batteries. The results show that the goodness of fit between the real and estimated HPPC pulse voltage values at different SOC values is above 0.99 for both NCM and LFP batteries. Based on the parameter identification results, the maximum error of the HPPC voltage estimated by the second-order ECM is within 0.045 V under both full pulse and single pulse testing conditions while the maximum error of SOC estimation is within 0.025. The UKF model modified by the FOLPF algorithm provides a reference for the accurate SOC estimation of batteries.

Effectiveness of Noble Gas Addition for Plasma Synthesis of Ammonia in a Dielectric Barrier Discharge Reactor

Non-thermal plasma driven ammonia synthesis has great potential for future industrial applications due to its low theoretical energy requirements. To achieve technological advancement and environmental sustainability, it is crucial to boost the energy yield in plasma-assisted ammonia synthesis. Therefore, optimizing energy transfer and utilization are key strategies for enhancing energy efficiency. In this study, dielectric barrier discharge driven by a nanosecond pulsed power supply is used to enhance plasma-assisted ammonia synthesis by controlling the energy transfer through the addition of noble gases. It was found that the addition of noble gases changed the plasma characteristics, significantly improved the uniformity of the discharge, and achieved a high energy yield for ammonia synthesis. The effects of additive amounts of argon (Ar) and helium (He), as well as the pulse parameters including the pulse voltage, pulse repetition frequency, pulse width, and pulse rise time on the energy yield of ammonia synthesis are discussed. The inclusion of noble gases expanded the pathway for gas-phase reactions, with the active components of critical reactions examined through optical emission spectra. This analysis revealed an increased presence of both N2+ and N2* particles in the reaction’s rate-limiting step, attributed to the addition of noble gases. Finally, a zero-dimensional (0D) plasma chemical kinetic model was established to investigate the influence of Ar addition on the reaction mechanism of ammonia synthesis.

Source–drain switching characteristics when coupled with a gate-controlled DBD in a microplasma switch

Microplasma switches have attracted considerable attention in harsh environment applications, such as satellites, space exploration, nuclear reactors, and oil drilling, because of their inherent characteristics. A microplasma switch is generally constructed from a source, drain, and gate electrodes, and current conduction is generated between the drain and source (DS), and modulated by the gate. In this work, to improve the gate lifespan and device stability, a microplasma switch with a gate dielectric barrier structure is fabricated due to the even and stable discharge of a dielectric barrier discharge (DBD), and a parameterized nanosecond pulse voltage signal is applied to the gate. Under the effect of the DS voltage, a pulsed DS current is triggered by the gate pulse since a large number of charged particles are generated by the gate DBD, which shows that the DS switching behavior is triggered by the gate pulse. The microplasma switch operates stably (with an average delay jitter of less than 50 ps) at the repetition frequencies (up to 80 kHz). Moreover, the influence of experimental conditions on the switching performance is systematically investigated. The conduction current and delay, which are related to the discharge intensity and speed, are influenced by the electric-field strength of the channel (determined from the pulse amplitude and DS voltage) and its variation rate (determined from the rising and falling edge time of the pulse). In addition, the device performance is influenced by varying the breakdown voltage of the DS (determined from the gas pressure multiplied by DS spacing), which can result in variation of the working coefficient. It is also influenced by varying the wall voltage (decided by pulse width and frequency), which can result in the decrease in the total voltage of the channel.

Ar(1s5) density in a co-axial argon plasma jet with N2–O2 shielding

Atmospheric-pressure microplasma jets (µAPPJs) are versatile sources of reactive species with diverse applications. However, understanding the plasma chemistry in these jets is challenging due to plasma-flow interactions in heterogeneous gas mixtures. Spatial metastable density profiles help to understand these physical and chemical mechanisms. This work focuses on controlling the shielding gas around a µAPPJ. We use a dielectric barrier discharge co-axial reactor where a co-flow shields the pure argon jet with different N2–O2 gas mixtures. A voltage pulse (4 kV, 1 µs, 20 kHz) generates a first discharge at the pulse’s rising edge and a second discharge at the falling edge. Tunable diode laser absorption spectroscopy measures the local Ar(1s5) density. A pure N2 (100%N2–0%O2) co-flow leads to less reproducible and lower peak Ar(1s5) density ( 5.8×1013cm−3 ). Increasing the O2 admixture in the co-flow yields narrower Ar(1s5) absorbance profiles and increases the Ar(1s5) density ( 6.9×1013 to 9.1×1013cm−3 ). The position of the peak density is closer to the reactor for higher O2 fractions. Absence of N2 results in comparable Ar(1s5) densities between the first and second discharges (maxima of 9.1×1013 and 9.3×1013cm−3 , respectively). Local Ar(1s5) density profiles from pure N2 to pure O2 shielding provide insights into physical and chemical processes. The spatially-resolved data may contribute to optimising argon µAPPJ reactors across the various applications and to validate numerical models.

Impact of Dual-Gate Configuration on the Endurance of Ferroelectric Thin-Film Transistors With Nanosheet Polycrystalline-Silicon Channel Film

This work explores the characteristics of ferroelectric thin-film transistors (FeTFTs) utilizing an asymmetric dual-gate (DG) structure in both single-gate (SG) and DG operation modes. In the transfer characteristics, DG mode exhibits a memory window (MW) of 1.075 V, smaller than SG mode’s MW of 1.402 V, attributed to the back-gate bias effect causing a reduction in the device’s threshold voltage. However, DG mode demonstrates superior endurance characteristics with 106 cycles compared to SG mode’s 105 cycles. Additionally, the increase in erase pulse voltage (VERS) exacerbates the polycrystalline-silicon channel lattice damage of FeTFT, resulting in subthreshold swing (SS) degradation. Nevertheless, the extent of SS degradation from DG mode operation is significantly lower than that of SG mode, contributing to the superior endurance of DG mode. The elevation of program pulse voltage (VPRG) induces imprint and charge-trapping effects in the top-gate ferroelectric dielectric, leading to reduced endurance. Due to the use of SiO2 as the back-gate dielectric in FeTFT, DG mode exhibits lower impacts of charge-trapping effects from the top-gate ferroelectric dielectric layer, resulting in better endurance compared to SG mode. The asymmetric DG structure provides greater tolerance in the selection of VPRG and VERS.

479 BrainPacer: Wireless Battery-Free Neuromodulator Embedded in a Dural Graft

INTRODUCTION: Neuromodulation represents an emerging realm of disruptive technologies for brain/spine disorders with potential applications across disease states, including neurodegenerative, neoplastic, epilepsy, trauma and vascular disorders. However, current implants have limitations inherent to the use of wires, batteries that need replacement, infection, and implant failure that have hindered wider adoption. METHODS: A 100 µm-thick, biocompatible, flexible, and transparent Parylene/PDMS substrate was used. In vivo validation (120 stimulation bursts, 10 pulses, 4 rats and 4 implants) was pursued using motor cortex stimulation after identification of the hindlimb representation via direct cortical stimulation. Hindlimb motion and reliability of stimulation and movement were detected via a video analysis software. A comparison of efficiency was conducted between the proposed dura substitute method and conventional direct stimulation method. RESULTS: Benchtop testing demonstrates reliable monophasic voltage pulses with an amplitude of 20V that can be subsequently regulated. Stimulation through the dura substitute results in reduced efficiency by 60% due to current loss but it offers the same reliability, triggering a motor response at each stimulation onset with an average limb deflection of 5.2 ± 2.986 mm with 99% confidence level. At least 30 seconds of recordings were obtained in each animal at a stimulation frequency of 1 Hz. CONCLUSIONS: We designed, validated and tested both a novel wireless and battery-free implant and a novel embodiment for placement with revolutionary potential. The implant triggers motor response through an FDA-approved dura substitute, without contacting the cortical surface. Studies in free-moving animals for chronic response studies are ongoing.

Experimental study of cavitation development in liquid in pulsed non-uniform electric field under the action of ponderomotive forces

In this paper, the Rayleigh scattering method is used to study the formation of cavitation in water in a pulsed inhomogeneous electric field when a nanosecond high voltage pulse is applied to a needlelike electrode. The observational results confirm the theoretical picture of cavitation development under the action of electrostrictive ponderomotive forces. The values of the negative pressure, the average size of the cavitation nanovoids, and their concentration were obtained from these measurements, which are in agreement with theoretical estimates.

Temporally resolved measurement of a force induced by a pulsed water-fuelled magnetron sputtering source

A high-speed solenoid-type pulsed valve is applied to a water-fuelled magnetron sputtering thruster, which can lead a compact and neutralizer-free electric propulsion device by generating a thrust due to the ejection of the sputtered target material, in order to minimize the size of the gas feeding system. The pulsed valve is opened for approximately 5 msec and the gaseous water is introduced into the source via a gas line connected to the source. A dc high voltage is firstly applied between the cathode and the anode; then the discharge is sustained for the period in which a gas pressure enough for the discharge is maintained and a change in the discharge mode is observed during the discharge pulse. To investigate the impact of the mode change on the thrust generation, a temporally resolved measurement of the force is equivalently performed by installing a pulsed voltage power supply and by changing the pulse width of the discharge voltage. The results show the temporal reduction of the thrust-to-power ratio during a pulsed discharge due to the nonlinear correlation between ion energy and sputtering yield. It is suggested that the use of a pulsed valve would be useful for downsizing of the electric propulsion system, while an optimization to properly control the gas flow rate is needed for further development.

Driver circuit with high-voltage pulse and high-frequency excitation for the cell of optically pumped sensors.

Helium optically pumped sensor is widely used in the application for the detection of weak magnetic fields, and the cell is the core component of that, which needs an external excitation signal to ignite and maintain its luminosity, and its luminosity affects the sensitivity performance of the sensor. To improve the performance of the cell and reduce the power consumption of the system, which is the largest power consumption component in the sensor, this study presents the design of a driver circuit for a helium cell based on a high-voltage pulse source and high-frequency excitation source and uses a T-type impedance matching circuit to realize the efficient transmission of energy. The experimental results demonstrate that the driver circuit can effectively light up the helium cell, in which the pulse voltage of the high-voltage excitation is more than 1.0kV, the output power of the high-frequency excitation signal is in the range of 0-6W, and it is easy to adjust the output power of the high-frequency excitation signal to optimize the sensitivity of the sensor with an the optimal power density of 1.1 W/cm2 and a sensitivity of 29.4 pT/Hz1/2 is obtained. The driver circuit method designed in this study is also suitable for other inert gases to generate metastable atoms.

Review Design and Simulation of a Switched Reluctance Motor Using Sensorless Control System

Abstract: This paper mainly introduces the acquisition of the position information of the switched reluctance motor through the inductance, which can make the switched reluctance motor(SRM) correct commutation. The main method is to apply highfrequency and low-duty pulse voltages to the two non-conducting phases of the switched reluctance motor when the motor is in low-speed operation, so that the non-conducting phase generates a response current through the rising slope of the response current The current change rate is obtained by the difference with the falling slope, and then the current change rate is converted into inductance through a formula, and whether the inductance reaches the inductance threshold is judged whether it reaches the commutation position, and the motor is subjected to timely and accurate commutation processing. This method is realized by matlab/simulink simulation, and combined with the high-speed inductance method obtained by the flux ratio current, to realize the position sensorless technology combined with the inductance method in the full speed cycle, and the simulation verifies that the low-speed and high-speed algorithms can be smooth Switch, and can realize its commutation control function, and It provides simulation support for applications such as lawn mower.

Effect of Anodic Oxidation Pulse Voltage on Antibacterial Properties and Biocompatibility of Ti-Ag Alloy

For the application of titanium and titanium alloys in orthopedic implant materials, the antibacterial properties and cell biocompatibility determine whether the implant surgery is successful. In this study, a functional anodic oxidation (AO) coating was successfully prepared to modify the surface of Ti-Ag alloy. The surface characteristics of the anodized Ti-Ag alloy were analyzed using techniques such as X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and contact angle measurements. The corrosion characteristics of Ti-Ag samples were tested by an electrochemical workstation. In addition, the antibacterial properties and cell activity were studied by the plate count method and MC3T3-E1 cell staining. The results indicate that the AO process can generate a multi-functional TiO2/Ag2O coating with a large number of block and flower-like structures on the surface of a Ti-Ag alloy. When the AO voltage of the sample is 120 V, the maximum roughness is 0.73 μm and the minimum wetting degree is 23°, which improves the biocompatibility. The corrosion test results show that AO treatment can improve the corrosion resistance of a Ti-Ag alloy. The oxidation voltage is 20 V and the coating has the best corrosion resistance. The corrosion open circuit potential (Eocp) is 107.621 mV and the corrosion current density (icorr) is 2.241 × 10−8 A·cm−2. This coating can promote ion release and show more than 99% of a strong antibacterial ability against S. aureus. The results of the compatibility evaluation by cultured cells showed that the multifunctional coating formed by the anodic oxidation process did not cause cytotoxicity and promoted the adhesion of MC3T3-E1 cells.

Torque and flux control of induction motors fed by synchronized and symmetrical voltage pulses

SummaryThe low switching frequency in high‐power motor drives is mandatory for reducing thermal stress on power devices but often results in significant current harmonics. Synchronized space vector modulation (SynSVM), a widely used low‐carrier‐ratio PWM strategy, offers a simple implementation and reduced harmonics. However, implementing SynSVM in traditional AC motor current regulation poses challenges due to fixed voltage samples. To address this, a high‐performance control scheme based on SynSVM is proposed in this manuscript. It ensures the stator flux vector follows a predefined trajectory by integrating voltage pulses from the original SynSVM. The basic voltage vector switching is facilitated through high‐frequency monitoring and compensation of torque and flux errors, resulting in a fast torque response. Furthermore, synchronized and symmetrical voltage pulses, inherent in the original SynSVM, are equivalently generated, to effectively mitigate current harmonics. This proposed method liberates designers from the complexities of current regulation based on SynSVM. Both simulations and experiments validate the efficacy of the proposed method.

A high‐power electromagnetic source for disabling improvised explosive devices

AbstractUltra‐wideband (UWB) microwave sources driven by specialised pulsed power generators have experienced a considerable development in the last decade due to their wide domain of new applications such as defence or counter‐terrorism activity. The authors present the main findings of a research dedicated to the development of a pulsed power‐driven electromagnetic field source for disabling improvised explosive devices (IED). The pulsed power generator driving the source is a 13‐stage compact Marx producing voltage pulses reaching an amplitude of 0.5 MV, with a pulse repetition frequency (PRF) of up to 100 Hz. The generator is coupled to a bipolar pulse forming line, providing bipolar pulses with a dV/dt of around 1.6 MV/ns. This pulsed power system feeds an array composed of 16 Koshelev‐type UWB antennas through an impedance matching transformer. The resulting electromagnetic source is capable to produce pulsed electric fields (PEFs) having a figure‐of‐merit (FOM) of 1 MV. First, practical experiments were carried out to study the effects of the PEFs on targets. The targets used in the present study are M2B type flashbulbs, known to have the same susceptibility as the US army M6 detonator. Different configurations of wires (shielded, twisted, etc) with different lengths were used in connecting items inside these targets. The tests were performed by placing the flashbulbs at different distances to determine the essential parameters (i.e., amplitude, duration, and frequency range) of the PEFs required to trigger them. An overview of the experimental campaign and the main findings are also presented followed by conclusions.

Electrical pruning of Pinus radiata epicormic growths

A novel method for pruning epicormic growths with high voltage energy pulses is presented. This method could be utilized in autonomous forest management, for example by a drone carrying an electrical pulse generator and applicator pruning device. In a laboratory setting, short duration, high voltage pulses of electricity were generated using a capacitor network and a current source. These pulses were applied to Pinus radiata needles and the relative tissue injury to the needles was assessed by estimating electrolyte leakage from the needles in deionised water using electrical conductivity (EC) measurements. EC was positively correlated with the electrical energy applied. This validated the theory that electrical stimuli can cause increased cell death in plant matter. The cell damage, based on electrolyte leakage, caused by stimulating a Pinus radiata needle with a single 1.5 J pulse of energy was 21 % of the maximum, where the maximum was found to result in an EC of 333 µS/cm per gramme of needle in a 45 ml solution. These results from testing on needles removed from the tree confirm the potential of electrical pruning of epicormic growths. Future testing on live in-situ needles will be implemented to determine the level at which cell death induced by the application of high voltage pulses is sufficient to prune epicormic growths, given that mechanical and biotic factors of needles removed from the tree may enhance the rate of cell death in harvested samples.

An Artificial Neural Network Based on Oxide Synaptic Transistor for Accurate and Robust Image Recognition.

Synaptic transistors with low-temperature, solution-processed dielectric films have demonstrated programmable conductance, and therefore potential applications in hardware artificial neural networks for recognizing noisy images. Here, we engineered AlOx/InOx synaptic transistors via a solution process to instantiate neural networks. The transistors show long-term potentiation under appropriate gate voltage pulses. The artificial neural network, consisting of one input layer and one output layer, was constructed using 9 × 3 synaptic transistors. By programming the calculated weight, the hardware network can recognize 3 × 3 pixel images of characters z, v and n with a high accuracy of 85%, even with 40% noise. This work demonstrates that metal-oxide transistors, which exhibit significant long-term potentiation of conductance, can be used for the accurate recognition of noisy images.

Modeling of Charge-to-Breakdown with an Electron Trapping Model for Analysis of Thermal Gate Oxide Failure Mechanism in SiC Power MOSFETs.

The failure mechanism of thermal gate oxide in silicon carbide (SiC) power metal oxide semiconductor field effect transistors (MOSFETs), whether it is field-driven breakdown or charge-driven breakdown, has always been a controversial topic. Previous studies have demonstrated that the failure time of thermally grown silicon dioxide (SiO2) on SiC stressed with a constant voltage is indicated as charge driven rather than field driven through the observation of Weibull Slope β. Considering the importance of the accurate failure mechanism for the thermal gate oxide lifetime prediction model of time-dependent dielectric breakdown (TDDB), charge-driven breakdown needs to be further fundamentally justified. In this work, the charge-to-breakdown (QBD) of the thermal gate oxide in a type of commercial planar SiC power MOSFETs, under the constant current stress (CCS), constant voltage stress (CVS), and pulsed voltage stress (PVS) are extracted, respectively. A mathematical electron trapping model in thermal SiO2 grown on single crystal silicon (Si) under CCS, which was proposed by M. Liang et al., is proven to work equally well with thermal SiO2 grown on SiC and used to deduce the QBD model of the device under test (DUT). Compared with the QBD obtained under the three stress conditions, the charge-driven breakdown mechanism is validated in the thermal gate oxide of SiC power MOSFETs.

Sensorless Control of Surfaced-Mounted Permanent Magnet Synchronous Motor in a Wide-Speed Range

This paper delves into a comprehensive study of a wide-speed-range sensorless control approach for surface-mounted permanent magnet synchronous motors (SPMSMs). In the low-speed range, a novel high-frequency pulse voltage injection (HFPVI) method is introduced for rotor position estimation, which does not depend on motor saliency and is well-suited for SPMSMs. This method incorporates a second-order generalized integrator (SOGI) and a new modulation signal to enhance the accuracy of rotor position estimation. For medium-to-high speeds, an improved super-twisting sliding mode observer (STSMO) utilizing a continuous hyperbolic tangent function is proposed to mitigate chattering. Additionally, a new phase-locked loop (NPLL) is introduced to accurately obtain the rotor position. Furthermore, this paper designs an exponential weighted switching function to facilitate a smooth transition of the motor from the low-speed domain to the medium- and high-speed domains. The effectiveness and superiority of the proposed methods are validated through simulations and experiments conducted on an RTU-BOX platform. The rotor position estimation errors of the proposed new HFPVI method and the improved STSMO method under various operating conditions are both approximately 0.05 rad (2.8 elc·deg), and the SPMSM can switch smoothly from the low-speed range to the medium- and high-speed ranges.