Abstract

High-performance polymer memristors with analog-type switching behaviors and low power consumption, which is a perfect candidate for brainoid intelligence, have triggered the research campaign of the novel in-memory computing paradigm. A novel poly[cyclopentadithiophene- alt-thiophene] with triazole and ferrocene moieties in the sidechains (PCTF) is synthesized by copper-catalyzed azide-alkyne Click chemistry reaction of poly[4,4-bis(6-azidohexyl)-4H- cyclopenta(1,2-b: 5,4-b′) dithiophene-alt-thiophene], which is prepared by the reaction of poly[thiophene-alt-4,4- bis(6-bromohexyl)- 4H-cyclopenta(1,2-b:5,4-b′)dithiophene](PTT-Br) with NaN3, with ethynylferrocene. The PTT-Br film sandwiched between the Al and ITO electrodes shows a typical history-dependent memristive switching performance at a small sweep voltage range of ± 1 V, with 6 distinguishable conductance states. The device current can be modulated continuously when being subjected to consecutive positive and negative voltage sweeps. In contrast to PTT-Br, PCTF exhibits excellent nonvolatile memristive performance, with 16 distinguishable conductance states due to the combined action of charge transfer between the triazole and ferrocene moieties, and redox activity from both the ferrocene and polymer backbone. As an important component related to human memory, the short-term synaptic plasticity to long-term potentiation/plasticity transition is, for the first time, successfully used to realize dual information encryption at a high information security level. Only by inputting a given number of voltage pulses and at a specific time can classified information be correctly read out.

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