We report the role of Gd2O3 substitution on the dielectric properties of alkali niobate K0.5Na0.5NbO3 (KNN) ceramics. This system exhibits relaxor behaviour for 0.5 wt% of Gd2O3 in KNN matrix and shows enhanced dielectric permittivity (er = 4147 at T = 628 K) and low loss (Tanδ ~ 0.008) at frequency f = 1 MHz. The position of crystallographic phase transitions of Orthorhombic to Tetragonal (T1) and Tetragonal to Cubic (T2) shifts significantly from 480 K to 413 K and 668 K to 582 K, respectively. The temperature and the frequency dependence of the position of maximum dielectric permittivity Tm obeys the Vogel–Fulcher law, with the attempt frequency f0 = 5.32×1011 Hz, freezing temperature Tf = 598 K and activation energy EA= 0.038 eV for KNN + 0.5 wt% Gd2O3. The temperature dependence of AC-conductivity σac (T) analysis in the range 300 K < T < 600 K reveals the existence of variable range hopping of charge carriers with average hopping length RH in the range 7.93-29.24 nm and 5.55-26.41 nm for ξ = 0 and ξ = 0.5, respectively. The diffuseness exponent ‘γ’ (~1.74) estimated from the high temperature slopes of the diffused dielectric permittivity data reveals the weakly coupled relaxor behavior.
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