Vertical Tunneling Research Articles

Numerical Simulation Analysis of the Jacking Force and Its Influencing Factors during the Vertical Tunneling Process

The development of underground space is fast because of the lack of space. To build shafts in underwater tunnels, the vertical tunneling method (VTM) was invented in 1974 in China, which can act as a freshwater intake or sewage outlet. During the operation of the VTM, the jacking force is one of the essential factors that draw attention. This paper conducts a numerical study of the jacking force and its influencing factors during the vertical tunneling process. First, based on the finite element software ABAQUS, a numerical model of the vertical tunneling process is established according to the VTM project in Beihai, China. Second, in accordance with the Latin hypercube sampling method and the multivariate significance analysis, the mechanical parameters are determined or back‐analyzed. Then, the calculated jacking force of the numerical model is compared with the measured jacking force. It turns out that the changing trend of the jacking force in the numerical model and the measured jacking force is relatively consistent. Finally, the influencing factors of the jacking force, such as elastic modulus and the angle of internal friction, are analyzed based on the numerical model. The results show that the elastic modulus and the angle of internal friction of soil are the main influencing factors of the jacking force. The secondary factors are Poisson’s ratio, static earth pressure coefficient, unit weight, and cohesion.

A Modification in Transabdominal Approach for Breast Augmentation (TABA) in Combined Surgery Patients

In combined surgery candidates, the transabdominal way to locate breast implants are preferred and applied with the abdominoplasty, aspiration lipoplasty and breast augmentation together in indicated cases. In 46 cases, very rare complication rate is observed as 3 cases with seroma in upper epigastric area and no infection or tissue circulation or nervous (sensorial) problems are observed. The technique contains a lower plane abdominoplasty incision, the wet technique saline infiltration to the abdominal area, aspiration lipoplasty following excess skin of the belly and undermining the central line, reaching medial breast regions, and fish hook shaped dissections from the medial supra fascial pectoral areas for the estimated volume of the breast implants differently from the previously described technique. Following the application of the implants, the skin between the breasts over the sternum, reattached to the base of the prepared hole with a fixation suture to facilitate the tunnel obliteration, and plication of rectus fascia and closing the incision of abdominoplasty completes the operation. A drainage provided by flat (7 or 10 mm Jackson-Pratt) drains applied for 48 hours following surgery. External combined garment for abdominoplasty and breast augmentation is applied for six weeks. By this vertical midline single tunneling technique, the previously described TABA surgery can be performed in a shorter operation time and lesser deformity and complication rate. EBM is accepted as Level V, Opinions of respected authorities, based on clinical experience, descriptive studies, or reports of expert committees.

Dielectric Layer Design of Bilayer Ferroelectric and Antiferroelectric Tunneling Junctions Toward 3D NAND-Compatible Architecture

The 3D vertical ferroelectric tunneling junction (FTJ) of bilayer antiferroelectric (AFE) <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mathrm {Hf}_{1-x}Zr_{x}\text{O}$ </tex-math></inline-formula> 2(HZO) and Al2O3 has been demonstrated for NAND-compatible feasibility. A bilayer-type FTJ is explored for the designs of the dielectric interlayer Al2O3 0 nm to 4 nm and the ferroelectric type, while the current mechanism is revealed. The multilevel AFE-FTJ is exhibited for both the Program and Erase operations and realizes a synaptic device. High-density emerging memory and computing-in-memory (CiM) are in high demanded for the future era and can be feasible by the proposed vertical FTJ.

GeSn based heterojunction double-gate tripple metal layer vertical TFET with enhanced DC and Analog/RF performance

In this article, low-bandgap material GeSn and high bandgap Si material heterojunction (GeSn/Si) based double gate triple metal layer Vertical TFET is designed and analyzed by ATLAS Silvaco TCAD simulation tool. Higher ON-state current is obtained by this device owing to (i) the usage of novel low band-gap material i.e., GeSn and (ii) Vertical tunneling as the gate overlaps the source region. The incorporation of GeSn material not only enhances the ON-state current but also improves the SS, albeit trading off the OFF-state current and ambipolar current of the device. To control the ambipolar current and OFF-state current, variation in the gate to drain overlap and auxiliary gate metal work function has been done. The impact of the gate to drain overlap and auxiliary gate workfunction variation has been studied for various electrical parameters. Further through extensive simulation analysis, optimized dimensions have been obtained. An enormously high ION/IOFF ratio of the order of 1.6 × 1012, steepest point, and average subthreshold swing of 7.5 mV/dec and 12.3 mV/dec respectively has been achieved through this proposed device. In addition to this, comparison of the proposed device with other novel TFET devices reported in literature has been done. From the comparison, it has been concluded that better results are obtained by the proposed device in terms of ION, IAMB, ION/IOFF ratio, SSavg, and gm. Therefore, this novel proposed device can be used as a promising device for various small power applications. Further, this device not only provides improved DC and Analog/RF electrical parameters but also provides small footprint due to vertically aligned architecture.

Vertical Tunneling Field-Effect Transistor With Germanium Source and T-Shaped Silicon Channel for Switching and Biosensing Applications: A Simulation Study

In this article, we introduce a novel vertical tunneling transistor that uses two germanium source regions and a T-shaped silicon channel and investigate its performance for low-voltage digital/analog and biosensing applications, by using numerical simulations. The switching performance of the device is improved by employing two highly doped N <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> pocket regions next to the germanium source regions. To increase the validity and accuracy of the obtained results, calibration with the results of an experimental report is carried out. As a biosensor, the performance of the device in detection and separation of different biomolecules is studied, too. Some of the main achievements among the various digital/analog and biosensing performance metrics are <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$I_{on} = 88.9 ~\mu \text{A}/\mu \text{m}$ </tex-math></inline-formula> , SS <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\mathrm{avg}} =25.28$ </tex-math></inline-formula> mV/dec, <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${f}_{T} =192.64$ </tex-math></inline-formula> GHz, and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${S}_{I_{D}}= 6.95\times10$ </tex-math></inline-formula> <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> .

A Physics-Based Model of Vertical TFET—Part II: Drain Current Model

A physics-based model for the tunneling current of vertical tunneling field transistors (TFET) is proposed. In part I, the expression of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\varphi _{\text {1D}}{(}\textit {x}{)}$ </tex-math></inline-formula> is derived from the multi-branch general solutions of Poisson’s equation. The model’s results are verified with TCAD simulation for transistors with different materials, device geometries, and biases. In this article, a surface potential model is validated at different device regions which include channel and drain. Based on the above two electric potential models, Kane’s tunneling formula is utilized for the calculation of band-to-band tunneling current. The proposed current model is valid for all transistors’ operating regions. The quantum effect on the band-structure parameters is taken into account in the modeling of InAs vertical TFET. It is shown that the channel thickness needs to be optimized to achieve the highest drive current.

Complementary Tunneling Behaviors in van der Waals Vertical Heterostructures

Vertical tunneling transistors are of interest in the development of next-generation electronics. However, due to nonideal metal-semiconductor interfaces, the majority tunneling carrier type and device polarity are largely fixed, posing a key limitation for practical application. The authors demonstrate complementary tunneling behaviors in vertical heterostructures using ultrathin BN as a tunneling barrier and damage-free van der Waals metal as the top contact, in which the majority carrier type can be switched from electrons to holes by a bias voltage. This work provides proof of principle and comprehensive understanding of the tunneling mechanism in these high-performance devices.

Vertical quantum tunneling transport based on MoS2/WTe2 nanoribbons

The quantum electrical and thermal transport properties of band-to-band tunneling are studied in the van der Waals (vdW) vertical MoS2/WTe2 nanoribbon heterojunction as well as the lateral MoS2/WTe2 heterojunction. The computational method is based on the Green's function method within the tight-binding approach in the coherent regime. The numerical results show distinct properties, such as a noticeable rectification ratio (RR) and a negative differential resistance (NDR). This device can act as a vertical tunneling transistor structure. Besides, the MoS2/WTe2 nanoribbon devices with the armchair termination exhibit the highest value of the ZTe at μ=±0.72 eV leading to their improved thermoelectric properties. Our findings about the hybrid heterostructures thus shed a new light toward extend the applications of 2D monolayer transition metal dichalcogenides (TDMs) materials in electronic and optoelectronic devices.

Demonstration of Molecular Tunneling Junctions Based on Vertically Stacked Graphene Heterostructures

We demonstrate the fabrication and complete characterization of vertical molecular tunneling junctions based on graphene heterostructures, which incorporate a control series of arylalkane molecules acting as charge transport barriers. Raman spectroscopy and atomic force microscopy were employed to identify the formation of the molecular monolayer via an electrophilic diazonium reaction on a pre-patterned bottom graphene electrode. The top graphene electrode was transferred to the deposited molecular layer to form a stable electrical connection without filamentary damage. Then, we showed proof of intrinsic charge carrier transport through the arylalkane molecule in the vertical tunneling junctions by carrying out multiprobe approaches combining complementary transport characterization methods, which included length- and temperature-dependent charge transport measurements and transition voltage spectroscopy. Interpretation of all the electrical characterizations was conducted on the basis of intact statistical analysis using a total of 294 fabricated devices. Our results and analysis can provide an objective criterion to validate molecular electronic devices fabricated with graphene electrodes and establish statistically representative junction properties. Since many of the experimental test beds used to examine molecular junctions have generated large variation in the measured data, such a statistical approach is advantageous to identify the meaningful parameters with the data population and describe how the results can be used to characterize the graphene-based molecular junctions.

Defect-assisted tunneling spectroscopy of electronic band structure in twisted bilayer graphene/hexagonal boron nitride moiré superlattices

We report the demonstration of defect-assisted tunneling spectroscopy of the electronic band structure in twisted bilayer graphene (tBLG)/hexagonal boron nitride (h-BN) moiré superlattices in which the moiré period between the two graphene layers is close to that between the graphene and h-BN layers. We measured both the in-plane and vertical carrier transport in the tBLG/h-BN van der Waals (vdW) tunneling device. The moiré periods were determined from the in-plane carrier transport measurements. The observed vertical tunneling transport characteristics indicated that resonant tunneling occurs from the graphite electrode to tBLG through localized defect states in the h-BN tunnel barrier. We observed multiple defect-assisted resonant tunneling trajectories, from which we derived the density of states (DOS) for tBLG. The obtained DOS has broad flatband features, in qualitative agreement with the theoretical predictions. Furthermore, we obtained three types of DOS, suggesting that we probed local band structures corresponding to AA, AB/BA, and domain wall sites in tBLG. Thus, defect-assisted tunneling spectroscopy has potential as a tool to determine the local band structures in twisted 2D vdW materials.

An analytical drain current model of Germanium source vertical tunnel field effect transistor

This paper presents an analytical modeling of the drain current for a Germanium source vertical tunnel field effect transistor. Both one dimensional (1D) and two dimensional (2D) Poisson's equation are used for solving the potential distribution as the device structure possess both vertical and lateral band-to-band tunneling components. The 2D band-to-band tunneling model is employed for solving the lateral tunneling while the 1D band-to-band tunneling model is implemented on solving the vertical tunneling which consist of the source region and the overlap channel region. The length of the maximum and minimum tunneling widths are calculated by measuring the distance from the edge of the valence band to conduction band of the energy band profile. Kane's band-to-band tunneling generation rate is used to model the drain current by superimposing two current components. In addition, the impact of bandgap narrowing as well as quantum correction on the drain current are also factored into the model. The analytical models are checked and matched against the results obtained from the TCAD simulations to ensure its accuracy.

Vertical Cladding Layer-Based Doping-Less Tunneling Field Effect Transistor: A Novel Low-Power High-Performance Device

This article introduces a novel vertical doping-less tunnel field-effect transistor (TFET), in which instead of using metal to induce charge plasma in the source region, cladding layer is utilized to engineer the energy bands in this region. The fabrication process flow of this highly scalable TFET is presented in detail. We employ a calibrated numerical simulator to study the switching and analog/RF performance of the proposed device. Moreover, the impact of different structural parameters and parasitic phenomena, such as interface trap charges and quantum confinement, on the device performance are investigated. According to the obtained results, our transistor exhibits desirable analog and digital performance including <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{ \mathrm{\scriptscriptstyle ON}} = 30.02 ~\mu \text{A}/\mu \text{m}$ </tex-math></inline-formula> , <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$ </tex-math></inline-formula> ratio of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$1.57\times10$ </tex-math></inline-formula> <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">11</sup> and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${f}_{T} = 89.31$ </tex-math></inline-formula> GHz.

Study of the Indoor Model Test and CEL Simulation of Jacking Force in the Vertical Tunnelling Method

The jacking force is one of the important parameters affecting the construction process in the vertical tunnelling method. To study the dynamic changing process of jacking force with the jacked distance and the influencing factors of the maximum jacking force, both the indoor model test and numerical simulation were conducted. In the model test, we investigated the influence of the height of the soil and water content. The results indicated that the higher the overburden height was, the greater the jacking force. Moreover, the water content enhanced the compressibility of the soil and had little effect on the maximum jacking force. Additionally, the coupled Eulerian–Lagrangian (CEL) approach was used to simulate the vertical jacking construction. In the numerical simulation, we investigated two construction factors (jacking speed and the standpipe outer diameter) and four soil parameters (cohesion, internal friction angle, elastic modulus, and Poisson’s ratio). Before that, the CEL simulation results were compared with test data to prove the rationality of the CEL approach, and the two were in good agreement. The results showed that among the six influence parameters, according to the influence degree on the maximum jacking force from large to low, the outer diameter of the standpipe, internal friction angle, cohesion, elastic modulus, jacking speed, and Poisson’s ratio were ranked. In addition, the jacking speed of numerical analysis was suggested to be 0.2 m/s. The research results in this paper can provide a reference for the construction of the vertical tunnelling method.

Electronic structure, magnetoresistance and spin filtering in graphene|2 monolayer-CrI33|graphene van der Waals magnetic tunnel junctions.

In the pursuit of designing van der Waals magnetic tunneling junctions (vdW-MTJs) with two-dimensional (2D) intrinsic magnets, as well as to quantitatively reveal the microscopic nature governing the vertical tunneling pathways beyond the phenomenological descriptions on CrI3-based vdW-MTJs, we investigate the structural configuration, electronic structure and spin-polarized quantum transport of graphene|2 monolayer(2ML)-CrI3|graphene heterostructure with Ag(111) layers as the electrode, using density functional theory (DFT) and its combination of non-equilibrium Green's function (DFT-NEGF) methods. The in-plane lattice of CrI3 layers is found to be stretched when placed on the graphene (Gr) layer, and the layer-stacking does not show any site selectivity. The charge transfer between CrI3 and Gr layers make the CrI3 layer lightly electron-doped, and the Gr layer hole-doped. Excitingly, the inter-layer hybridization between graphene and CrI3 layers render the CrI3 layer metallic in the majority spin channel, giving rise to an insulator-to-half-metal transition. Due to the metallic/insulator characteristics of the spin-majority/minority channel of the 2ML-CrI3 barrier in vdW-MTJs, Gr|2ML-CrI3|Gr heterostructures exhibit an almost perfect spin filtering effect (SFE) near the zero bias in parallel magnetization, a giant tunneling magnetoresistance (TMR) ratio up to 2 × 104%, and remarkable negative differential resistance (NDR). Our results not only give an explanation for the observed giant TMR in CrI3-based MTJs but also show the direct implications of 2D magnets in vdW-heterostructures.

DC and AC tunneling magnetoelectric responses of cobalt lateral nanogranular films

We demonstrate a new structural optimization of cobalt–(barium fluoride) lateral nanogranular films, achieving independently variable direct current (DC) and alternating current (AC) tunneling effects, in the film plane and out of the plane, respectively. Lateral nanogranular films were successfully fabricated via programmable tandem sputtering. Flat-shaped magnetic Co nanogranules were periodically inserted between dielectric barium fluoride layers of different thicknesses. All the lateral nanogranular films were insulating, with electrical resistivities ρ exceeding 1013 μΩ·cm, even with a Co content as high as 30 at.%. A lateral tunneling magnetoresistance (TMR) effect and vertical tunneling magnetodielectric (TMD) effect were found in the same lateral nanogranular film with 30 at.% Co. For a nanogranular film with lateral Co nanoparticles, the sensitivity of both the TMR and TMD ratio were improved at small magnetic fields compared with conventional films with spherical Co nanoparticles, reflecting its small saturation magnetic field. This layer-ordered metal–insulator nanogranular structure has potential applications in AC/DC hybrid elements as a high-sensitivity magnetic sensor.

Gate‐all‐around nanowire vertical tunneling FETs by ferroelectric internal voltage amplification

This work illustrates the most effective way of utilizing the ferroelectricity for tunneling field-effect transistors (TFETs). The ferroelectric (Hf0.5Zr0.5O2) in shunt with gate-dielectric is utilized as an optimized metal–ferroelectric–semiconductor (OMFS) option to improve the internal voltage (V int ) for ample utilization of polarization and electric fields of Hf0.5Zr0.5O2 across the tunneling region. The modeling of V int signifies 0.15–1.2 nm reduction in tunneling length (λ) than the nominal metal–ferroelectric–insulator–semiconductor (MFIS) option. Furthermore, the TFET geometry with the scaled-epitaxy region as vertical TFET (VTFET), strained Si0.6Ge0.4 as source, and gate-all-around nanowire options are used as an added advantage for further enhancement of TFET’s performance. As a result, the proposed design (OMFS-VTFET) achieves superior DC and RF performances than the MFIS option of TFET. The figure of merits in terms of DC characteristics in the proposed and optimized structure are of improved on-current (=0.23 mA μm−1), high on-to-off current ratio (=1011), steep subthreshold swing (=33.36 mV dec−1), and superior unity gain cut-off frequency (≥300 GHz). The design is revealed as energy-efficient with significant reduction of energy-efficiency in both logic and memory applications.

1039 kA/cm2 peak tunneling current density in GaN-based resonant tunneling diode with a peak-to-valley current ratio of 1.23 at room temperature on sapphire substrate

In this Letter, we present the excellent negative differential resistance (NDR) characteristics of AlN/GaN double-barrier resonant tunneling diodes (RTDs) in which the active layers are grown by molecular beam epitaxy on thick GaN-on-sapphire templates manufactured by metal-organic chemical vapor deposition. Here, indium flux is introduced as surfactant to reduce the interface roughness and improve the sharpness of heterointerface during epitaxial growth of AlN/GaN/AlN quantum well. The processed device with a top collector diameter of 1 μm size demonstrates a record peak current density of 1039 kA/cm2 while simultaneously featuring a peak-to-valley current ratio of 1.23 at room temperature, excellent achievements among all the reported GaN-based RTDs on any substrates. In addition, no degradation of device performance together with free of hysteresis is observed for the 1000 times consecutive up-to-down voltage sweeps under forward bias. These remarkable achievements are attributed to the marked improvement in heterointerface quality of AlN/GaN/AlN double-barrier quantum well by adopting indium as surfactant during epitaxial growth as clarified by transmission electron microscopy analysis, which dramatically suppresses the interface roughness scattering and elements interdiffusion, thus significantly improving the NDR signatures in current–voltage curves. The obtained results in this work illustrate that indium-surfactant added epitaxy technique turns out to be a promising approach for the modulation of vertical electron resonant tunneling in III-nitride heterostructures and realization of highly reproducible and reliable AlN/GaN double-barrier RTDs, in favor of implementation for future high-power solid-state electronics operating in terahertz spectra.

Performance Analysis of the Diagonal Tunneling-Based Dielectrically Modulated Tunnel FET for Bio-Sensing Applications

In this work, a Diagonal Tunneling Dielectrically Modulated Tunnel Field Effect Transistor (DT-DMTFET) architecture is proposed for label-free bio-sensing application. The performance of this sensor architecture is comprehensively investigated with the help of extensive numerical device simulations. The architecture has been carefully engineered to exploits the diagonal band to band tunneling (BTBT) component in favor of bio-molecule detection. The essential physics of the transduction mechanism for lateral tunneling, vertical tunneling, and diagonal tunneling-based DMTFETs is extensively analyzed from device electrostatics and transport mechanisms. The transduction efficiency of the sensor devices is quantitatively assessed in terms of current sensitivity, where DT-DMTFET exhibits a sensitivity of 3590 compared to 2514 and 1550 observed in lateral tunneling (LT) and vertical tunneling (VT) dominated DMTFETs, respectively. The optimum sensitivity of DT-DMTFET is observed at 4V and 0.4 V gate and drain biases ranges of operation, where the same is observed at a gate bias of 5V and 7V for LT- and VT- DMTFET, respectively. Furthermore, the device design aspects are studied in detail to identify the relevant structural parameters and subsequently optimize the sensing performance of the DT-DMTFET. Finally, an extensive comparative performance study establishes that the DT-DMTFETs offer more than 50% and 100 % improvements in the current sensitivity compared to their lateral and vertical tunneling-based counterparts, respectively, over a range of bio-molecule sample specifications.

Hot Electron Tunneling in Pt/LaAlO3/SrTiO3 Heterostructures for Enhanced Photodetection.

LaAlO3/SrTiO3 (LAO/STO) heterostructures, in which a highly mobile two-dimensional electron gas (2DEG) is formed, have great potential for optoelectronic applications. However, the inherently high density of the 2DEG hinders the observation of photo-excitation effects in oxide heterostructures. Herein, a strong photoresponse of the 2DEG in a Pt/LAO/STO heterostructure is achieved by adopting a vertical tunneling configuration. The tunneling of the 2DEG through an ultrathin LAO layer is significantly enhanced by UV light irradiation, showing a maximum photoresponsivity of ∼1.11 × 107%. The strong and reversible photoresponse is attributed to the thermionic emission of photoexcited hot electrons from the oxygen-deficient STO. Notably, the oxygen vacancy defects play a critical role in enhancing the tunneling photocurrent. Our systematic study on the hysteresis behavior and the light power dependency of the tunneling current consistently support the fact that the photoexcited hot electrons from the oxygen vacancies strongly contribute to the tunneling conduction under the UV light. This work offers valuable insights into a novel photodetection mechanism based on the 2DEG as well as into developing ultrathin optoelectronic devices based on the oxide heterostructures.

Performance Evaluation of Epitaxial Layer Based Gate Modulated TFET (GM-TFET)

This paper reports the performance of an epitaxial layer (ETL) based gate modulated (GM-TFET) through 3D Technology Computer Aided Design (TCAD) simulations. The architecture utilizes effects of both vertical tunneling and lateral tunneling phenomena to improve the device performance. Attributes of the ETL, its thickness (tepi) and doping concentration (Nepi) are varied and their impact on device electrical parameters such as transfer characteristic, output performance, subthreshold swing (SS), and threshold voltage (VT) is highlighted. It is observed that both tepi and Nepi significantly influence the different electrical parameters of the ETL based TFET architecture.