Defect Density Variation Research Articles

A spatially-resolved model of neutron-irradiated tungsten coupling stochastic cluster dynamics and finite deformation plasticity

Structural materials used in nuclear reactors face severe degradation in mechanical properties, such as hardening and embrittlement. At the microscopic scale, this occurs due to creation and accumulation of irradiation-induced defects and their interaction with system dislocations. Although techniques exist which can model evolution of irradiation defects, for instance kinetic transport theory-based models, their interaction with mechanical deformation of the bulk material has not been investigated extensively. In this work, we demonstrate a novel spatially-resolved multiscale coupling between microscopic irradiation defect evolution, modeled using Stochastic Cluster Dynamics (SCD) and macroscopic mechanical deformation modeled using a finite-deformation plasticity model. SCD is used to determine the statistically averaged defect cluster spacing, dependent on operating conditions such as irradiation dose and temperature. This acts as an initial condition that governs the critical resolved shear stress of dislocation glide in the macroscopic plasticity model. This framework is used to predict mechanical behavior in post-mortem test of irradiated Tungsten samples, which has found its importance as structural material used in nuclear reactors. The results obtained using the coupled approach are in good agreement with experimental data of uniaxial tension tests. The model is able to capture the effect of temperature and irradiation dose on the material hardening. Two methods are proposed to estimate hardness – using Tabor's Law relating uniaxial yield stress to hardness and from flat-punch simulations. The results are in reasonable agreement with hardness data from micro-indentation experiments of irradiated Tungsten samples. The model is also able to reveal microstructural details such as spatial variation in defect density and local stress.

Investigating the exciton dynamics in InGaN/GaN core-shell nanorods using time-resolved cathodoluminescence.

This study examines the exciton dynamics in InGaN/GaN core-shell nanorods using time-resolved cathodoluminescence (TRCL), which provides nanometer-scale lateral spatial and tens of picoseconds temporal resolutions. The focus is on thick (>20 nm) InGaN layers on the non-polar, semi-polar and polar InGaN facets, which are accessible for study due to the unique nanorod geometry. Spectrally integrated TRCL decay transients reveal distinct recombination behaviours across these facets, indicating varied exciton lifetimes. By extracting fast and slow lifetime components and observing their temperature trends along with those of the integrated and peak intensity, the differences in behaviour were linked to variations in point defect density and the degree and density of localisation centres in the different regions. Further analysis shows that the non-polar and polar regions demonstrate increasing lifetimes with decreasing emission energy, attributed to an increase in the depth of localisation. The semi-polar facet instead showed a spectral independence of the lifetime which could not be rationalised by an absence of exciton localisation. This investigation provides insights into the intricate exciton dynamics in InGaN/GaN nanorods, offering valuable information for the design and development of optoelectronic devices.

Current matching and filtered spectrum analysis of wide-bandgap/narrow-bandgap perovskite/CIGS tandem solar cells: A numerical study of 34.52 % efficiency potential

Perovskite (PVK) materials with wide-bandgap (WBG) play a crucial role in achieving high-performance tandem devices but phase segregation and open-circuit voltage (VOC) loss hinders in surpassing the efficiency of single-junction solar cells. Present work discloses a numerical simulation which has been carried out using a WBG material CH3NH3PbI3-xClx of bandgap (Eg) 1.65eV as an absorber layer of the top cell (TCELL) and a Cu(In,Ga)Se2-based cell having narrow-bandgap (NBG) of Eg (1.27eV) has been used as bottom cell (BCELL). The TCELL utilizes polyethyleneimine ethoxylated (PEIE) interfacial layer to promote charge-collection and charge-tunneling. The TCELL and BCELL have been optimized by various optimization processes such as simultaneous thickness variation of active-region with defect density (DD), variation of interface defect density (IDD) with solar-cell parameters a commendable power conversion efficiency (PCE) of 27.06 %, and 26.77 % has been achieved for respective solar-devices. Variations of numerous electron transport layer (ETL) and hole transport layer (HTL) have also been performed to acquire highly optimized TCELL. Thus, a perovskite/CIGS tandem solar cell (PVK/CIGS-TSC) device has been obtained using filtered-spectra analysis and current-matching (method which display a promising photovoltaic (PV) parameter with a high VOC of 2.29 V, short-circuit current density (JSC) of 17.41 mA/cm2, fill factor (FF) of 86.45 % and PCE of 34.47 %. These discoveries hold significant promise for the future development of TSCs.

Effect of Gaussian defect density variations on electrical characteristics of TIPS-pentacene-based OTFT

Effect of Gaussian defect density variations on electrical characteristics of TIPS-pentacene-based OTFT

Fatigue-based process window for laser beam powder bed fusion additive manufacturing

Processing defects remain the primary cause for fatigue failure of laser beam powder bed fusion (PBF-LB) produced components. Accordingly, process mapping methodologies have been extensively developed to identify optimal processing parameters to avoid defects. For structure-critical applications, it is necessary to validate the defect-based process map through fatigue testing. We quantify the defect structure (porosity) process map for PBF-LB Ti-6Al-4V based on defect populations and fatigue properties. The defect populations were measured in samples fabricated at constant power and small increments in scanning velocity using X-ray micro-computed tomography and 2D metallography and analyzed using a number density approach. Furthermore, 4-point bend fatigue testing was used to establish stress-cycles to failure properties. Our results reveal distinct defect populations in both keyhole and lack-of-fusion defect regimes, with continuous variation in defect density. The number density-based defect size quantity strongly correlates with process parameters, peak stress, and initiating defect size, offering a quantitative approach to establish process-defect-fatigue relationships. We conclude that the process window exists just as clearly for fatigue as it does for defects, although more sensitive to variability in defects. Consequently, within this fatigue-based process window, one can expect to consistently produce dense components with superior fatigue properties.

Performance enhancement of Sb2Se3 solar cell with IGZO and n-ZnO as electron transport layers

A prototype of an antimony (III) selenide (Sb2Se3) solar cell with different electron transport layers (ETLs) was simulated using the Solar Cell Capacitance Simulator (SCAPS) software. The impact of two individual ETLs – namely, indium gallium zinc oxide (IGZO) and n-type zinc oxide (n-ZnO) – was analyzed, and it was found out that n-ZnO was best for the ETL. The n-ZnO, antimony (III) selenide and Indium gallium zinc oxide (IGZO) layers in the newly proposed structure have respective thicknesses of 50, 300 and 20 nm. To achieve the optimum performance of this prototype, the acceptor concentration of copper (II) oxide is taken as 1018 cm−2 and the donor concentration of n-ZnO is taken as 1020 cm−2. The defect densities at antimony (III) selenide and antimony (III) selenide/n-ZnO are taken as 1013 and 1010 cm−2, respectively. They play a crucial part in device performance. With the optimized structure, a maximum power conversion efficiency of up to 31.72% (V OC = 1.148 V, J SC = 48.30 mA/cm2 and fill factor = 88.50%) is obtained with n-ZnO as the ETL. For effective results, the defect densities at both interfaces are taken as 109 cm−2, and maximum efficiency is achieved. Numerical analysis of the proposed structure and study of various parameters such as thickness variation at the absorber layer, series resistance and temperature variation, defect density, metal function and interface density variation were done.

Exploring the potential of tin-based perovskite-silicon tandem solar cells through numerical analysis: A pathway to sustainable energy innovation

“Necessity is the mother of invention.” The global imperative to transition from fossil fuels to renewable energy sources, driven by the pressing issue of climate change, highlights the significance of advancing solar energy technologies. While single junction solar cells have reached a peak efficiency of approximately 31 %, the pursuit of higher efficiency has led to the exploration of tandem solar cell architectures, including perovskite-silicon and all-perovskite configurations. However, the widespread use of lead in perovskite structures raises environmental and health concerns. In response to these challenges, this study proposes a novel approach by integrating a tin-based wide bandgap absorber layer with a silicon HIT solar cell (Heterojunction with Intrinsic Layer). The investigation consists of an extensive exploration of six different carrier transport layers (CTL) for the top perovskite layer, considering variations in thickness and defect density. A comprehensive analysis of charge carrier dynamics within the device is conducted to understand the role of defect density in influencing solar cell performance parameters. Simulation results show that the overall tandem device gives an encouraging PCE of 32.12 % in 2 T configuration due to its excellent high value of current density matching 17.63 mA/cm2 and open-circuit voltage of 2.19V. We sincerely hope that our work will open new avenues in the field of Solar Photovoltaics paving the way for future innovations.

A synergistic approach in designing InP/ZnS quantum dot based CIGS solar cell

This research work investigates the implementation of non-toxic InP/ZnS quantum dot (QDs) buffer layer in solar cell. Due to its nontoxic behaviour, it is a better replacement of commonly used CdS buffer layer. InP/ZnS quantum dots buffer layer enhances light absorption, leading to a broader spectral response and improved power conversion efficiency. Graded CIGS (CuIn1-xGaxSe2) is used as absorber layer in this study for better utilization of solar spectrum. The combined utilization of an InP/ZnS QD buffer layer and a graded absorber layer results in a synergistic enhancement of the cell's performance. Further optimization of CIGS layers is achieved by varying the gallium content (x) in the Cu(In1−xGax)Se2. For the gallium content (x) in the range of 0.20 to 0.15, maximum efficiency is achieved which is 31.20 %. Numerical modeling is employed in this study to analyze how variations in thickness, doping concentration, and defect density impact the solar cell performances.

Effect of pH on Electrochemical Impedance Response of Tethered Bilayer Lipid Membranes: Implications for Quantitative Biosensing

Tethered bilayer lipid membranes (tBLMs) are increasingly used in biosensor applications where electrochemical impedance spectroscopy (EIS) is the method of choice for amplifying and recording the activity of membrane-damaging agents such as pore-forming toxins or disrupting peptides. While the activity of these biological agents may depend on the pH of the analytes, there is increasing evidence that the sensitivity of tethered bilayer sensors depends on the pH of the solutions. In our study, we addressed the question of what are the fundamental reasons for the variability of the EIS signal of the tBLMs with pH. We designed an experiment to compare the EIS response of tBLMs with natural membrane defects and two different membrane disruptors: vaginolysin and melittin. Our experimental design ensured that the same amount of protein and peptide was present in the tBLMs, while the pH was varied by replacing the buffers with different pH values. Using a recently developed EIS data analysis algorithm from our research group, we were able to demonstrate that, in contrast to previous literature which relates the variability of tBLM, EIS response to the variation in defect density, the main reason for the observed variability in EIS response is the change in the sub-membrane properties of tBLMs with pH. Using surface-enhanced infrared absorption spectroscopy (SEIRAS), we have shown that pH changes from neutral to slightly acidic leads to an expulsion of water, presumably bound to ions, from the sub-membrane reservoir, resulting in a marked decrease in the carrier concentration and specific conductance of the sub-membrane reservoir. Such a decrease is recorded by the EIS as a decrease in the conductance of the tBLM complex and affects the sensitivity of a biosensor. Our data provide important evidence of pH-sensitive effects that should be considered in both the development and operation of biosensors.

Defect annealing in heavy-ion irradiated tungsten: Long-time thermal evolution of saturated displacement damage at different temperatures

Understanding the time-dependence of thermal evolution and recovery of displacement damage is of great significance for evaluations of material performance in harsh fusion environments. In this study, the long-time thermal evolution of irradiation-induced defects has been investigated in heavy-ion irradiated tungsten at doses above the saturation limit. Polycrystalline tungsten samples were irradiated with 6 MeV copper ions up to 0.6 dpa at room temperature, followed by a series of isothermal annealing experiments at 653 and 1123 K for 5000, 10000 and 20000 s, respectively. Annealing at both temperatures triggered the coevolution of interstitial and vacancy defects, causing changes in defect morphology, size and population statistics. The damage microstructure remained stable after 5000 s at 653 K. Subtle variations in defect density and size were found, indicating the quasi-thermal-equilibrium state of the damage microstructure. In this temperature regime, small defect clusters were depleted via annihilation and absorption, while large defect clusters and defect-impurity complexes were pinned by traps requiring further thermal activation. Pronounced time-dependence in defect evolution was found at 1123 K. Defect recovery and defect coarsening became more prominent with increasing duration. Almost all dislocation networks dissociated into individual dislocation lines after 20000 s, while nano-sized voids and loops became fewer but gained an increase in size. These findings can be attributed to the collective impact of the increasing mobility of small vacancy clusters, the continual dissociation of large vacancy clusters and small voids, and the thermally activated detrapping of defect clusters from impurities and/or other traps.

Numerical assessment and optimization of highly efficient lead-free hybrid double perovskite solar cell

In this work, a performance assessment of a double perovskite Cs2BiCuI6 solar cell with the typical lead-based perovskite CH3NH3PbI3 as an active layer is presented using SCAPS-1D software. The theoretical analysis depicts the improvement in power conversion efficiency (PCE) for Cs2BiCuI6-based solar cells. This shows that in the coming future, the hybrid double perovskite Cs2BiCuI6 possess the capability to replace toxic CH3NH3PbI3-based solar cell which would help to create lead-free harmless solar cells. Detailed structural parameters optimization such as the absorbing layer thickness, and charge carrier mobility, and variation in interface defect density is carried out to enhance the device efficiency. This gives a PCE of 24.84 % for a hybrid double perovskite-based solar cell. The optimized values are 1013 cm−3, and 5 cm2 V−1 s−1 for interface defect density and carrier mobility respectively which also enhances the fill factor to 82 % with open circuit voltage of 1.28 V and 24.54 mA/cm2 short circuit current density Jsc.

Nanoindentation Response of 3D Printed PEGDA Hydrogels in a Hydrated Environment.

Hydrogels are commonly used materials in tissue engineering and organ-on-chip devices. This study investigated the nanomechanical properties of monolithic and multilayered poly(ethylene glycol) diacrylate (PEGDA) hydrogels manufactured using bulk polymerization and layer-by-layer projection lithography processes, respectively. An increase in the number of layers (or reduction in layer thickness) from 1 to 8 and further to 60 results in a reduction in the elastic modulus from 5.53 to 1.69 and further to 0.67 MPa, respectively. It was found that a decrease in the number of layers induces a lower creep index (CIT) in three-dimensional (3D) printed PEGDA hydrogels. This reduction is attributed to mesoscale imperfections that appear as pockets of voids at the interfaces of the multilayered hydrogels attributed to localized regions of unreacted prepolymers, resulting in variations in defect density in the samples examined. An increase in the degree of cross-linking introduced by a higher dosage of ultraviolet (UV) exposure leads to a higher elastic modulus. This implies that the elastic modulus and creep behavior of hydrogels are governed and influenced by the degree of cross-linking and defect density of the layers and interfaces. These findings can guide an optimal manufacturing pathway to obtain the desirable nanomechanical properties in 3D printed PEGDA hydrogels, critical for the performance of living cells and tissues, which can be engineered through control of the fabrication parameters.

Study the effect of total defect density variation in absorbing layer on the power conversion efficiency of lead halide perovskite solar cell using SCAPS-1D simulation tool

Perovskite solar cells (PSCs) are known as 3rd generation solar cells that have enormous potential to be commercialised. But the major drawback is less stability and degraded performance with the passage of time. Various parameters that contribute to their efficiency are doping concentration of charge carriers, thickness of absorbing layer and total defect density. This paper presents a numerical study on inverted planar organometal lead halide perovskite based solar cells using NiO as hole transport layer (HTL) and SnO2 as electron transport layer (ETL). The structure ITO/NiO/CH3NH3PbI3/SnO2/metal contact is simulated using SCAPS-1D software. Here we investigate the effect of variation of total defect density on the efficiency of perovskite solar cell at the layer thickness of 320 nm. The simulated device reported a Power conversion efficiency (PCE) of 25.5% at the total defect density level of 1015 cm−3, VOC of 1.06 V and Fill Factor (FF) of 0.80. Further analysis revealed a declining trend in the (PCE) value from 25.5% to 1.85% on increasing the defect density from 1015 to 1018 cm−3. This trend is detrimental for the overall performance of the device.

Visualizing the interplay of Dirac mass gap and magnetism at nanoscale in intrinsic magnetic topological insulators.

In intrinsic magnetic topological insulators, Dirac surface-state gaps are prerequisites for quantum anomalous Hall and axion insulating states. Unambiguous experimental identification of these gaps has proved to be a challenge, however. Here, we use molecular beam epitaxy to grow intrinsic MnBi2Te4 thin films. Using scanning tunneling microscopy/spectroscopy, we directly visualize the Dirac mass gap and its disappearance below and above the magnetic order temperature. We further reveal the interplay of Dirac mass gaps and local magnetic defects. We find that, in high defect regions, the Dirac mass gap collapses. Ab initio and coupled Dirac cone model calculations provide insight into the microscopic origin of the correlation between defect density and spatial gap variations. This work provides unambiguous identification of the Dirac mass gap in MnBi2Te4 and, by revealing the microscopic origin of its gap variation, establishes a material design principle for realizing exotic states in intrinsic magnetic topological insulators.

Determinants Affecting the Performance of CZTSSe: Antisite Defects and Multiple Quantum Confinement for Photon-Sensitive Devices

For its earth availability and non-toxicity, kesterite (CZTS, CZTSe and CZTSSe) material has gained much importance in photon-sensitive(PS) applications. Additionally, effect of multiple carrier confinement adds the performance of the devices.The high <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\textit {oc}} $ </tex-math></inline-formula> deficit in chalcogenide materials is caused by structural antisite defects. The use of carrier confinement using Quantum Wells with CZTSSe and CZTS as well and barrier material has been investigated in this study. The defect distribution on the CZTS material and the effects of creating more potential wells with variations in the (S,Se) composition of CZTSSe is explored. The analsysis has a substantial influence on the electrical and optical properties of the absorber layer. The quantum efficiency is also calculated in order to observe sensitivity of device w.r.t solar spectrum. A comparative analysis is performed between four major aspects: first, the performance of with and without defect structures, second, the compositional change of S,Se in CZTSSe material, third, the growth in the number of QWs, and finally, the variation in defect density. According to the findings of the study, recombination in the barrier region has a significant impact in the performance of QW structures, particularly higher QW structures. According to the acquired results, at a defect density on the order of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">17</sup> , a range of nearly 16 to 18% efficiency has been achieved for the 70QW structure for various CZTSSe compositions.

The Impact of Defect Density on Mechanical Characteristics of 4H-SiC Substrates

In this work the intrinsic and induced defects related to the mechanical strength of 4H-SiC wafer have been investigated by considering substrates having different dislocation density and subjected to different treatments such as thinning process and high temperature bulk and laser annealing. Three point bending test has been performed on die extracted from the substrates in order to calculate the stress σ the die can withstand at breakage (flexural strength). The variation of intrinsic defect density seems does not act to modify the material flexural strength. Conversely, a considerable correlation between the induced defect density and flexural strength has been found.

Study on the effect of temperature on electrical parameters of lead free methylammonium tin halide based Perovskite Schottky Devices

Perovskite appears to be the most promising candidate for thin-film optoelectronic devices due to its excellent optoelectronic properties, low-cost fabrication, and high photovoltaic performance. However, tin-based perovskite devices possess a few issues related to thermal instability and poor performance. A study on thermal instability will be important to understand the inner mechanism of the device. To find out the cause of thermal instability, a study on the temperature coefficient of different electrical parameters is necessary. In this work, the effect of temperature on electrical parameters of methylammonium tin iodide (CH3NH3SnI3) and methylammonium tin chloride (CH3NH3SnCl3) based Schottky devices having an ITO/Perovskites/Al architecture has been studied using a SCAPS-1D simulator. The coefficients of the temperature of these parameters have been calculated. The currentvoltage analysis shows the positive temperature coefficient of barrier height and negative temperature coefficient of the ideality factor. The estimated values of the absolute temperature coefficient of barrier height and ideality factor are 1.28 meV per K and 0.07 per K for CH3NH3SnI3 and 1.14 meV per K and 0.02 per K for CH3NH3SnCl3 perovskite-based Schottky device, respectively. The comparative study shows that the CH3NH3SnCl3 perovskite has better thermal stability. We have also studied the variation of thickness, defect densities, and acceptor concentration of the perovskites, and finally, an optimized device of both types of Schottky devices has been proposed. This study reveals the temperature sensitiveness of lead-free tin-based perovskite-based Schottky devices. The decrease in the value of different device parameters will be very informative for further study to get temperature invariant performances of lead-free perovskite solar cells.

Numerical simulation of novel lead-free Cs3Sb2Br9 absorber-based highly efficient perovskite solar cell

In this paper, a novel Cs 3 Sb 2 Br 9 perovskite is presented for the absorber layer of perovskite solar cells (PSC). A planar structure as ITO/TiO 2 /Absorber/Spiro-OMeTAD/Au with Cs 3 Sb 2 Br 9 as a light harvesting material is numerically simulated using SCAPS-1D simulation software. Initially, the optimization is performed on the various material parameters of absorber layer such as thickness, bulk defect density, relative permittivity and bandgap. The obtained optimal values for these parameters are 1000 nm, 1 × 10 12 cm −3 , 10, and 2.0 eV, respectively. Finally, the proposed PSC structure with optimized absorber layer is achieved the maximum power conversion efficiency (PCE) of 15.69% whereas V OC as 1.31 V, J SC as 13.67 mA/cm 2 , FF as 87.61%, and QE of ∼100% at 390 nm wavelength near the visible range of solar spectrum. The obtained results of numerical simulations with Cs 3 Sb 2 Br 9 as absorber layer endorse the novel proposed PSC material as the main body of PSC and opens a better route towards the development of a cost effective, highly efficient (Pb) lead-free and environment friendly PSC. • A novel Cs 3 Sb 2 Br 9 absorber layer material is proposed for design of high efficiency lead-free perovskite solar cell. • Numerical analysis and optimization of novel absorber in proposed PSC structure is performed using SCAPS-1D to investigate the effect of bulk defect density, absorber thickness, energy bandgap and permittivity variations on PSC parameters. • A planar structure consisting of charge transport materials TiO 2 and Spiro-OMeTAD used as ETL and HTL, is simulated for the analysis. • The proposed PSC is promising and may offer the PCE of 15.69% with V OC of 1.31 V , J SC of 13.67 mA/cm 2 and FF of 86.78%.

Comprehensive device simulation of 23.36% efficient two-terminal perovskite-PbS CQD tandem solar cell for low-cost applications

The major losses that limit the efficiency of a single-junction solar cell are thermalization loss and transmission loss. Thus, to efficiently utilize the full solar spectrum and to mitigate these losses, tandem solar cells (TSC) have significantly impacted the photovoltaic (PV) landscape. In this context, the research on perovskite/silicon tandems is currently dominating the research community. The stability improvements of perovskite materials and mature fabrication techniques of silicon have underpinned the rapid progress of perovskite/silicon TSC. However, the low absorption coefficient and high module cost of the silicon are the tailbacks for the mass production of perovskite/silicon TSCs. Therefore, PV technology demands to explore some new materials other than Si to be used as absorber layer in the bottom cell. Thus, here in this work, to mitigate the aforementioned losses and to reduce cost, a 23.36% efficient two-terminal perovskite-PbS CQD monolithic tandem solar cell has been designed through comprehensive device simulations. Before analyzing the performance of the proposed TSC, the performance of perovskite top cells has been optimized in terms of variation in optical properties, thickness, and interface defect density under standalone conditions. Thereafter, filtered spectrum and associated integrated filtered power by the top cell at different perovskite thickness from 50 to 500 nm is obtained to conceive the presence of the top cell above the bottom cell with different perovskite thickness. The current matching by concurrently varying the thickness of both the top and bottom subcell has also been done to obtain the maximum deliverable tandem JSC for the device under consideration. The top/bottom subcell with current matched JSC of 16.68 mA cm−2/16.62 mA cm−2 showed the conversion efficiency of 14.60%/9.07% under tandem configuration with an optimized thickness of 143 nm/470 nm, where the top cell is simulated under AM1.5G spectrum, and bottom cell is exposed to the spectrum filtered by 143 nm thick top cell. Further, the voltages at equal current points are added together to generate tandem J–V characteristics. This work concludes a 23.36% efficient perovskite-PbS CQD tandem design with 1.79 V (VOC), 16.67 mA cm−2 (JSC) and 78.3% (FF). The perovskite-PbS CQD tandem device proposed in this work may pave the way for the development of high-efficiency tandem solar cells for low-cost applications.

Optimal design and photovoltaic performance of eco friendly, stable and efficient perovskite solar cell

In this study, we have investigated a lead-free perovskite solar cell with Two-Dimensional (2-D) electron and hole transport materials using device simulation software. We have analyzed the characteristics of the solar cell and quantum efficiency at the illumination of light and measured the output performance parameters. We have varied device parameters, such as absorber thickness, absorber doping concentration, and defect density in the absorber layer, to get the optimized values of the solar cell module . We have also considered the effect of interface layer defect density and temperature variation factors. Simulation results showcase a short circuit current density ( Jsc ) of 27.3 mA/cm 2 , open-circuit voltage ( Voc ) of 0.96 V, fill-factor ( FF ) of 87.62%, and power conversion efficiency ( PCE ) of 22.17%. The high quantum efficiency ( QE) of 98% in the visible region is due to the material's high absorbance with our proposed perovskite solar cell (PSC). Finally, we compared our proposed PSC with other solar cells to state the efficiency of the perovskite material used in our cell module. This work provides a route towards the development of eco-friendly and stable perovskite solar cells. • In this study, with optimized parameters of proposed architecture, we have achieved 22.17% power conversion efficiency and 98% Quantum efficiency for perovskite solar cell. • Various factors affecting the cell's performance like thickness of absorber layer, absorber's doping concentration, absorber's defect density, absorber/ETL interface defect density, operating temperature, and by using different absorber material have been rigorously investigated. • We compared our proposed PSC with other solar cells with different absorber materials for comparative analysis.