Study on the effect of temperature on electrical parameters of lead free methylammonium tin halide based Perovskite Schottky Devices

Abstract

Perovskite appears to be the most promising candidate for thin-film optoelectronic devices due to its excellent optoelectronic properties, low-cost fabrication, and high photovoltaic performance. However, tin-based perovskite devices possess a few issues related to thermal instability and poor performance. A study on thermal instability will be important to understand the inner mechanism of the device. To find out the cause of thermal instability, a study on the temperature coefficient of different electrical parameters is necessary. In this work, the effect of temperature on electrical parameters of methylammonium tin iodide (CH3NH3SnI3) and methylammonium tin chloride (CH3NH3SnCl3) based Schottky devices having an ITO/Perovskites/Al architecture has been studied using a SCAPS-1D simulator. The coefficients of the temperature of these parameters have been calculated. The currentvoltage analysis shows the positive temperature coefficient of barrier height and negative temperature coefficient of the ideality factor. The estimated values of the absolute temperature coefficient of barrier height and ideality factor are 1.28 meV per K and 0.07 per K for CH3NH3SnI3 and 1.14 meV per K and 0.02 per K for CH3NH3SnCl3 perovskite-based Schottky device, respectively. The comparative study shows that the CH3NH3SnCl3 perovskite has better thermal stability. We have also studied the variation of thickness, defect densities, and acceptor concentration of the perovskites, and finally, an optimized device of both types of Schottky devices has been proposed. This study reveals the temperature sensitiveness of lead-free tin-based perovskite-based Schottky devices. The decrease in the value of different device parameters will be very informative for further study to get temperature invariant performances of lead-free perovskite solar cells.