High-yield uniform β-Ga2O3 nanowire films with mesh structure on GaP substrate have been synthesized via heat treating porous GaP preevaporated Au under low vacuum. The single-crystalline β-Ga2O3 nanowires have uniform diameters of about 100nm and a preferential [001] growth direction along the axis. The as-prepared β-Ga2O3 nanowire film reveals a superhydrophobic property. The remarkable photoinduced surface wettability conversion at β-Ga2O3 nanowire film was found, which can be explained by the cooperation of the surface photosensitivity and the special nanostructure.