Abstract
The Raman spectrum of gallium oxide (β-Ga2O3) nanowires with [001] growth direction is identical to that of the bulk Ga2O3 [Y. C. Choi et al. Adv. Mater. 12, 746 (2000)] while that of β-Ga2O3 nanowires with [401¯] growth direction is redshifted by 4–23cm−1 [Y. H. Gao et al. Appl. Phys. Lett. 81, 2267 (2002)]. Here we report the Raman and Fourier transform infrared spectra of β-Ga2O3 nanowires with [110] growth direction which is blueshifted relative to the bulk spectra by ∼10–40cm−1. Based on a first principles calculation of the strain dependence of Raman mode frequencies in bulk β-Ga2O3, we correlate the observed frequency shifts to growth-direction-induced internal strains in the nanowires.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
