Objective: In this report, photo sensitive materials with enhanced charge carriers have been prepared using dip coating technique. Methods: Cadmium sulphide (CdS) is N-type semiconductor compound belonging to II-VI group. CdS nanoparticles were synthesized using non-aqueous chemical method and characterized by ultraviolet-visible (UV-Vis) absorption spectroscopy, photoluminescence (PL) and transmission electron microscopy. CdS films were deposited on fluorine doped tin oxide (FTO) glass slides using dip coating method at different dip times and heat treated in air and analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive analysis by X-rays (EDAX), mapping and atomic force microscopy (AFM). Results: Quantum confinement effect was observed in UV-Vis absorption spectra of CdS nanoparticles. Quenching of luminescence intensity and blue shift at smaller wavelengths were observed in PL spectra. Presence of highly dense rectangular shaped grains in CdS films and increment in particle sizes with increase in dip time were shown by AFM images. Selected area electron diffraction images showed ring patterns indicating polycrystalline nature of CdS nanoparticles. Increase in crystallite size and decrease in crystal defects by heat treatment in air and increment in grain size with increase in dip time were shown by SEM images. XRD analysis of CdS films showed polycrystalline nature. Conclusion: In previous work, preparation of dip coating deposited CdS films on FTO glass substrates for optoelectronic device applications such as photo sensors has not been reported. In this study, I-V characteristics of heterojunctions under dark and illumination conditions were discussed. Experimental results obtained in our study and their comparison with previous reports were also discussed.
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