Ultraviolet Light-emitting Diodes Research Articles

Enhanced efficiency of deep ultraviolet light-emitting diodes utilizing full-coverage Al reflector and highly reflective Ni/Rh p-electrode

Increasing the reflection of p-side is an effective way to improve the optoelectronic performance of flip-chip light-emitting diodes (FCLEDs). Here, we propose a full-coverage Al reflector (FAR) and a highly reflective Ni/Rh p-electrode to enhance the performance of deep ultraviolet (DUV) FCLEDs. The physical mechanism for the impact of the FAR and Ni/Rh electrode on the light extraction efficiency (LEE) is discussed theoretically. Simulations demonstrate that the combination of the FAR and Ni/Rh electrode improves the LEEs of transverse electric- and transverse magnetic-polarized light by 13.62% and 27.08%, respectively. At an injection current of 100 mA, the fabricated DUV FCLEDs with FAR and Ni/Rh electrode exhibits an external quantum efficiency of 4.01% and a wall plugging efficiency of 2.92%, which are 16.85% and 13.18% higher than those of conventional DUV FCLEDs, respectively. These results support the promise of the FAR and Ni/Rh electrode for high-power DUV LED applications.

Strategically constructed AlGaN doping barriers for efficient deep ultraviolet light-emitting diodes.

Here, we propose a sandwich-like Si-doping scheme (undoped/Si-doped/undoped) in Al0.6Ga0.4N quantum barriers (QBs) to simultaneously promote the optoelectronic performances and reliability of deep ultraviolet light-emitting diodes (DUV-LEDs). Through experimental and numerical analyses, in the case of DUV-LEDs with conventional uniform Si-doping QB structure, severe operation-induced reliability degradation, including the increase of reverse leakage current (IR) and reduction of light output power (LOP), will offset the enhancement of optoelectronic performances as the Si-doping levels increase to an extent, which hinders further development of DUV-LEDs. According to a transmission electron microscope characterization and a numerical simulation, an improved interfacial quality in multiple quantum wells (MQWs) and more uniform carrier distribution within MQWs are demonstrated for our proposed Si-doping structure in comparison to the uniform Si-doping structure. Consequently, the proposed DUV-LED shows superior wall-plug efficiency (4%), IR at -6 V reduced by almost one order of magnitude, and slower LOP degradation after 168-h 100 mA-current-stress operation. This feasible doping scheme provides a promising strategy for the high-efficiency and cost-competitive DUV-LEDs.

Evaluating the Performance of UV Disinfection across the 222-365 nm Spectrum against Aerosolized Bacteria and Viruses.

Bioaerosols play a significant role in the transmission of many infectious diseases, especially in enclosed indoor environments. Ultraviolet (UV) disinfection has demonstrated a high efficacy in inactivating microorganisms suspended in the air. To develop more effective and efficient UV disinfection protocols, it is necessary to evaluate and optimize the effectiveness of UV disinfection against aerosolized bacteria and viruses across the entire UV spectrum. In this study, we evaluated the performance of UV disinfection across the UV spectrum, ranging from 222 to 365 nm, against aerosolized bacteria and viruses, including Escherichia coli, Staphylococcus epidermidis, Salmonella enterica, MS2, P22, and Phi6. Six commonly available UV sources, including gas discharge tubes and light-emitting diodes with different emission spectra, were utilized, and their performance in terms of inactivation efficacy, action spectrum, and energy efficiency was determined. Among these UV sources, the krypton chloride excilamp emitting at a peak wavelength of 222 nm was the most efficient in inactivating viral bioaerosols. A low-pressure mercury lamp emitting at 254 nm performed well on both inactivation efficacy and energy efficiency. A UV light-emitting diode emitting at 268 nm demonstrated the highest bacterial inactivation efficacy, but required approximately 10 times more energy to achieve an equivalent inactivation level compared with that of the krypton chloride excilamp and low-pressure mercury lamp. This study provides insights into UV inactivation on bioaerosols, which can guide the development of effective wavelength-targeted UV air disinfection technologies and may significantly help reduce bioaerosol transmission in public areas.

Significant conductivity enhancement in Al-rich n-AlGaN by modulation doping

Enhancing the conductivity in Al-rich n-AlGaN is a key issue for realizing AlGaN-based ultraviolet light-emitting diodes (UV-LEDs) with low operating voltage and high wall-plug efficiency, especially in a planar geometry of flip–chip configuration. An approach of modulation doping is herein proposed, where an alternating-layer structure consisting of Si-doped and unintentionally doped AlGaN is assembled to achieve the spatial separation of electron activation and transport. As massive electrons diffuse from the AlGaN:Si layer into the neighboring i-AlGaN ones and then drift, the ionized-donor scattering is effectively weakened, leading to a significant enhancement of mobility as well as conductivity. An impressive electrical property of n-Al0.6Ga0.4N with a lateral conductivity of 201.7 S/cm is realized as a consequence, being 2.1 times of that in the continuously doped one. Furthermore, the operating voltage of 280 nm UV-LEDs is correspondingly reduced by 0.1–0.2 V at 100 mA by adopting modulation-doped n-AlGaN in the n-cladding layer.

Enhancing light extraction efficiency of the inclined-sidewall-shaped DUV micro-LED array by hybridizing a nanopatterned sapphire substrate and an air-cavity reflector

In this work, we hybridize an air cavity reflector and a nanopatterned sapphire substrate (NPSS) for making an inclined-sidewall-shaped deep ultraviolet micro light-emitting diode (DUV micro-LED) array to enhance the light extraction efficiency (LEE). A cost-effective hybrid photolithography process involving positive and negative photoresist (PR) is explored to fabricate air-cavity reflectors. The experimental results demonstrate a 9.88% increase in the optical power for the DUV micro-LED array with a bottom air-cavity reflector when compared with the conventional DUV micro-LED array with only a sidewall metal reflector. The bottom air-cavity reflector significantly contributes to the reduction of the light absorption and provides more escape paths for light, which in turn increases the LEE. Our investigations also report that such a designed air-cavity reflector exhibits a more pronounced impact on small-size micro-LED arrays, because more photons can propagate into escape cones by experiencing fewer scattering events from the air-cavity structure. Furthermore, the NPSS can enlarge the escape cone and serve as scattering centers to eliminate the waveguiding effect, which further enables the improved LEE for the DUV micro-LED array with an air-cavity reflector.

Efficiency Limits in Coalesced AlGaN Nanowire Ultraviolet LEDs

Efficiency Limits in Coalesced AlGaN Nanowire Ultraviolet LEDs

Design and Performance Evaluation of a Deep Ultraviolet LED-Based Ozone Sensor for Semiconductor Industry Applications.

Ozone (O3) is a critical gas in various industrial applications, particularly in semiconductor manufacturing, where it is used for wafer cleaning and oxidation processes. Accurate and reliable detection of ozone concentration is essential for process control, ensuring product quality, and safeguarding workplace safety. By studying the UV absorption characteristics of O3 and combining the specific operational needs of semiconductor process gas analysis, a pressure-insensitive ozone gas sensor has been developed. In its optical structure, a straight-through design without corners was adopted, achieving a coupling efficiency of 52% in the gas chamber. This device can operate reliably in a temperature range from 0 °C to 50 °C, with only ±0.3% full-scale error across the entire temperature range. The sensor consists of a deep ultraviolet light-emitting diode in a narrow spectrum centered at 254 nm, a photodetector, and a gas chamber, with dimensions of 85 mm × 25 mm × 35 mm. The performance of the sensor has been meticulously evaluated through simulation and experimental analysis. The sensor's gas detection accuracy is 750 ppb, with a rapid response time (t90) of 7 s, and a limit of detection of 2.26 ppm. It has the potential to be applied in various fields for ozone monitoring, including the semiconductor industry, water treatment facilities, and environmental research.

Deep Ultraviolet Light Emitting Diode Based on Aluminum Gallium Nitride

AlGaN-based deep ultraviolet LED has gradually attracted people's attention, because it can be used in sterilization, secret communication and other fields. According to the research report of nearly twenty years, there are still many shortcomings in the external quantum efficiency, internal quantum efficiency and light extraction efficiency of AlGaN-based deep ultraviolet LED. For this reason, researchers have made many efforts at the chip level, including epitaxial and doping technology. In recent years, more and more researchers have studied packaging technology with low light efficiency caused by Fresnel and total reflection. In epitaxial technology, this paper mainly introduces the material selection of substrate and the use of buffer layer. In this paper, the most commonly used substrate selection and the existing problems and solutions of substrates are summarized. The current process of buffer layer is also introduced. On the doping level, the present situation and development of N-type doping and P-type doping are introduced respectively. The use of the latest doping elements is introduced in this paper. Packaging technology explains the choice between organic materials and inorganic materials, and how the packaging structure can avoid the reflection loss of light to the maximum extent. Finally, the article predicts the future development direction.

Broadband Green-Yellow KGaSi2O6:Eu2+ Phosphor with Excellent Thermal Stability for Near Ultraviolet-Pumped White-Light-Emitting Diodes

Various types of Eu2+ activated phosphors show potential applications in light emitting diodes. In this work, the Eu2+ activated KGaSi2O6 phosphors were synthesized using high-temperature solid-state reactions. The crystallization and oxidation states, luminescence spectra, decay characteristics, and thermal stability were researched. Depending on excitation of NUV light, the Eu2+ activated KGaSi2O6 phosphors emitted green-yellow light originating from the 4f65d1 → 4f7 transitions of Eu2+. In the light of emission data measured at different temperatures, the activation energy was calculated as 0.33 eV. The warm white light with a correlated color temperature of 3909 K and a color rendering index of 81.9 was emitted by the WLED device consisting of near ultraviolet LED chips, KGaSi2O6:Eu2+ and CaAlSiN3:Eu2+ phosphors.

Rapid Photoacoustic Exhaust Gas Analyzer for Simultaneous Measurement of Nitrogen Dioxide and Sulfur Dioxide.

A rapid photoacoustic (PA) exhaust gas analyzer is presented for simultaneous measurements of nitrogen dioxide (NO2) and sulfur dioxide (SO2). A laser diode (LD) emitting at 450 nm and a light-emitting diode (LED) with a peak wavelength of 275 nm operated simultaneously, producing PA signals of NO2 and SO2, respectively. The LD and LED were modulated at different frequencies of 2568 and 2570 Hz, and their emission light beams were transmitted through two resonant tubes in a differential PA cell (DPAC), respectively. A self-made dual-channel digital lock-in amplifier was used to realize the simultaneous detection of dual-frequency PA signals. Cross interference between the PA signals at the two different frequencies was reduced to 0.02% by using a lock-in amplifier. In order to achieve a rapid dynamic measurement, gas sampling was accelerated by an air pump. The use of mufflers and the differential PA detection technique significantly reduced the gas sampling noise. When the gas flow rate was 1000 sccm, the response time of the PA dual-gas analyzer was 8 and 17 s for NO2 and SO2, respectively. The minimum detection limits of NO2 and SO2 were 1.7 and 26.1 ppb when the averaging time of the system was 10 s, respectively. Due to the wide spectral bandwidth of the LED, NO2 produced an interference to the detection of SO2. The interference was reduced by the precise detection of NO2. Since the radiations of the LD and LED passed through two different PA tubes, the impact of NO2 photochemical dissociation caused by UV LED luminescence on NO2 gas detection was negligible. The sharing of the PA cell, the gas lines, and the signal processing modules significantly reduced the size and cost of the PA dual-gas analyzer.

Wavelength dependency and photosensitizer effects in UV-LED photodegradation of iohexol

Iodinated X-ray contrast media (ICM) are ubiquitously present in water sources and challenging to eliminate using conventional processes, posing a significant risk to aquatic ecosystems. Ultraviolet light-emitting diodes (UV-LED) emerge as a promising technology for transforming micropollutants in water, boasting advantages such as diverse wavelengths, elimination of chemical additives, and no induction of microorganisms’ resistance to disinfectants. The research reveals that iohexol (IOX) degradation escalates as UV wavelength decreases, attributed to enhanced photon utilization efficiency. Pseudo-first-order rate constants (kobs) were determined as 3.70, 2.60, 1.31 and 0.65 cm2 J−1 at UV-LED wavelengths of 255, 265, 275 and 285 nm, respectively. The optical properties of dissolved organic matter (DOM) and anions undeniably influence the UV-LED photolysis process through photon competition and the generation of reactive substances. The influence of Cl− on IOX degradation was insignificant at UV-LED 255, but it promoted IOX degradation at 265, 275 and 285 nm. IOX degradation was accelerated by ClO2−, NO3−and HA due to the formation of various reactive species. In the presence of NO3−, the kobs of IOX followed the order: 265 > 255 > 275 > 285 nm. Photosensitizers altered the spectral dependence of IOX, and the intermediate photoactivity products were detected using electron spin resonance. The transformation pathways of IOX were determined through density functional theory calculations and experiments. Disinfection by-products (DBPs) yields of IOX during UV-LED irradiation decreased as the wavelength increased: 255 > 265 > 275 > 285 nm. The cytotoxicity index value decreased as the UV-LED wavelength increased from 255 to 285 nm. These findings are crucial for selecting the most efficient wavelength for UV-LED degradation of ICM and will benefit future water purification design.

Remediation of imidacloprid and carbamazepine in polluted soil using TiO2 with LED lamps

Imidacloprid and carbamazepine are recognised as emerging contaminants (ECs) due to their ubiquitous presence in environmental compartments and their potential to cause undesirable ecological effects. Wastewater treatment plants are relevant routes for these compounds to enter environment since they are continuously released through treated wastewater. The progressively more extended custom of reusing treated wastewater for agricultural irrigation has also enlarged the risks for ECs accumulation in soil and their translocation to crops, posing a constant threat to both humans and wildlife. This work is aimed to study the behaviour of imidacloprid and carbamazepine and its main transformation products generated in soil during photocatalytic treatments using commercial TiO2 (Degussa P25) and ultraviolet light emitting diode (UV-LED) lamps as light source. Prior to remediation trial, the influence of catalyst load and soil moisture content in ECs degradation was studied. Experiments were performed using a photochemical reactor equipped with LED lamps running at 365 nm, exposing polluted soils to different treatments in presence and absence of photocatalyst. A significant degradation (93.4 and 96.2% for imidacloprid and carbamazepine, respectively) was observed after 4 days of photocatalytic treatment. The main transformation products were identified during the different treatments. Our results suggest that TiO2-photocatalytic treatment combined with UV-LED could be considered a promising technology to remove ECs from soils.

Species composition of Culicoides (Diptera: Ceratopogonidae) in the Ridge and Valley region of Tennessee, USA.

Biting midges in the genus Culicoides Latreille (Diptera: Ceratopogonidae) are known to transmit many pathogens of veterinary and medical concern. Although much work has been done globally and in certain regions of North America, Culicoides spp. research in rural Appalachia is limited. To begin characterizing the distribution and community structure of Culicoides spp. in Appalachia, we surveyed 2 distinct sites in the Ridge and Valley ecoregion of northeastern Tennessee, USA, from April 2021-September 2021. Culicoides spp. were sampled using 2 methods: Centers for Disease Control ultraviolet LED light traps and potential larval habitat substrate collection (coupled with water chemistry values). Site 1 was dominated by natural features, and Site 2 was a beef cattle operation. During 96 trap nights, a total of 1,568 Culicoides were collected, representing 24 species. Site 1 yielded the highest diversity, with 24 species, while Site 2 yielded 12 species. Overall, the most abundant species in light traps were C. stellifer Coquillett (44%), C. bergi Cochrane (18%), C. haematopotus Malloch (12%), and C. debilipalpis Lutz (11%). From substrate sampling, 8 species were identified. Culicoides haematopotus was the most abundant and was collected during each sampling period. Water chemistry values taken at the time of substrate collection were not significantly related to which Culicoides spp. emerged from a given substrate. Our results indicate a diverse community of Culicoides spp. in our study area, however, further work is needed to identify Culicoides species composition across a variety of landscapes in Appalachia and inform research on vector presence and associated vector disease dynamics.

Monolithic integration of deep ultraviolet and visible light-emitting diodes for radiative sterilization application

The demand for effective sterilization methods, particularly in the wake of the Covid-19 pandemic, has sparked interest in the use of deep ultraviolet (DUV) radiation for disinfection. The high risk of skin/eye exposure to the high-energy DUV radiation requires the integration of DUV and visible (VIS) LED chips to sterilize and indicate its operation simultaneously in the portable sterilization devices. However, conventional double-chip integration suffers from high power consumption and fabrication complexity. This study sets out to explore the monolithic integration of DUV and VIS LEDs for the radiative sterilization application. This is accomplished by cascading AlGaN/AlGaN/AlGaN multiple quantum wells (QWs) and GaN/InGaN/GaN QWs through the compositional grading AlGaN cascade region. The inevitable overflown electrons from DUV QWs are deliberately introduced into the VIS QWs, allowing for the electron–hole recombination and the simultaneous emission of VIS light. Both experiment and simulation results confirm the feasibility of the proposed dual-wavelength LED integration. The proposed DUV&VIS LED shows an external quantum efficiency and wall-plug efficiency of 2.03% and 1.54% at 40 mA, respectively. This study establishes a quantitative framework for the monolithic integration of DUV and VIS LEDs for radiative sterilization, which has the potential to replace the current technique of using discrete DUV and VIS double-chip configurations.

Progress in Performance of AlGaN‐Based Ultraviolet Light Emitting Diodes

AbstractAlGaN‐based ultraviolet light‐emitting diodes (UV‐LEDs) have the advantages of mercury (Hg) pollution free, small size, high efficiency, and so on, and are widely used in military, medical, and industrial fields, which are considered to be the most promising alternative to the traditional Hg lamps. Great efforts are made over the past few decades to improve the device performance, thereby meeting the commercial production and application requirements of UV‐LEDs, which is always accompanied by a series of interesting physical topics. In this review, the recent research progress in performance of AlGaN‐based UV‐LEDs is summarized from the perspectives of electrical injection, electro‐optical conversion, and light extraction, which are responsible for the operation of devices. The detailed discussions include the major challenges, the corresponding technological breakthroughs, and also the outlook of material growth, energy band modulation, as well as device fabrication involved in UV‐LEDs, which are expected to be helpful for the thorough comprehension of device physics and further development of AlGaN‐based UV‐LEDs.

Non-heavy doped pnp-AlGaN tunnel junction for an efficient deep-ultraviolet light emitting diode with low conduction voltage.

While traditional tunnel junction (TJ) light-emitting diodes (LEDs) can enhance current diffusion and increase hole injection efficiency, their reliance on highly doped AlGaN layers to improve hole tunneling efficiency results in a higher conduction voltage, adversely impacting LED device performance. This paper proposes a non-heavy doped pnp-AlGaN TJ deep ultraviolet (DUV) LED with a low conduction voltage. By inserting the TJ near the active region, between the electron blocking layer and the hole supply layer, the need for heavily doped AlGaN is circumvented. Furthermore, the LED leverages the polarization charge in the pnp-AlGaN TJ layer to decrease the electric field strength, enhancing hole tunneling effects and reducing conduction voltage. The non-heavy doped pnp-AlGaN TJ LED effectively enhances carrier concentration in the quantum well, achieving a more uniform distribution of electrons and holes, thus improving radiative recombination efficiency. Consequently, at an injection current of 120 A/cm2, compared to the traditional structure LED (without TJ), the proposed LED exhibits a 190.7% increase in optical power, a 142.8% increase in maximum internal quantum efficiency (IQE) to 0.85, and a modest efficiency droop of only 5.8%, with a conduction voltage of just 4.1V. These findings offer valuable insights to address the challenges of high heavy doped TJ and elevated conduction voltage in high-performance TJ DUV LEDs.

Development of a standard evaluation method for microbial UV sensitivity using light-emitting diodes

Ultraviolet (UV) light is an effective disinfection method. In particular, UV light-emitting diodes (UV-LEDs) are expected to have many applications as light sources owing to their compact form factor and wide range of choices of wavelengths. However, the UV sensitivity of microorganisms for each UV wavelength has not been evaluated comprehensively because standard experimental conditions based on LED characteristics have not been established. Therefore, it is necessary to establish a standard evaluation method based on LED characteristics. Here, we developed a new UV-LED device based on strictly controlled irradiation conditions using LEDs for each wavelength (250–365 nm), checked the validity of the device characteristics and evaluated the UV sensitivity of Escherichia coli using this new evaluation method. For this new device, we considered accurate irradiance, accurate spectra, irradiance uniformity, accurate dose, beam angle, surrounding material reflections, and sample condition. From our results, the following UV irradiation conditions were established as standard: 1 mW/cm2 irradiance, bacterial solution with absorbance value of A600 = 0.5 diluted 10 times solution, solution volume of 1 mL, working distance (WD) of 100 mm. In order to compare the effects of irradiation under uniform conditions on inactivation of microorganisms, we assessed inactivation effect of E. coli by LED irradiation at each wavelength using the U280 LED as a standard wavelength. The inactivation effect for U280 LED irradiation was −0.95 ± 0.21 log at a dose of 4 mJ/cm2. Under this condition of dose, our results showed a high wavelength dependence of the inactivation effect at each UV wavelength peaking at 267 nm. Our study showed that this irradiation system was validated for the standard UV irradiation system and could be contributed to the establishment of food and water hygiene control methods and the development of equipment for the prevention of infectious diseases.

Design optimization of a cylindrical UV-C LED reactor for effective water disinfection with numerical simulations and test reactor fabrication

Ultraviolet C-band light-emitting diodes (UV-C LEDs) provide effective water disinfection and flexible reactor design. In this study, the disinfection performance of the cylindrical UV-C LED reactor was optimized using a new computational fluid dynamics (CFD) technique and validated experimentally with test reactors. The CFD technique provided UV doses for individual particles representing microorganisms, which were integrated along their trajectories using the discrete phase method within the radiation field acquired through the Monte Carlo method. Utilizing the minimum UV dose as a criterion, four key design parameters were evaluated: reactor aspect ratio (L/D) (in the range of 2.5−6), LED power angle (15−55°), wall reflectivity (0.6−0.94), and water flow rate (1−4 l/min). The optimal L/D of 4.2 was determined and subsequently applied to fabricate the test reactors. The polytetrafluoroethylene (PTFE) test reactor exhibited superior disinfection performance for E. coli O157:H7 compared to the one made of SUS304, due to its high wall reflectivity. Furthermore, a lower water flow rate enhanced disinfection performance by extending the residence time. The predicted log reductions exhibited a consistent trend with the measured values, confirming the efficacy of the CFD methodology applicable to various reactor designs and LED configurations.

Thermal enhancement of optical-thermal-electrical isolation package structure for UVA LEDs

As one of the most important heat transfer channels for ultraviolet radiation-A light-emitting diodes (UVA LEDs), the substrate often simultaneously undertakes the tasks of electrical connection and UV reflection as well, which makes the optical, thermal and electrical performance mutually constrained, resulting in poor heat dissipation and light output efficiency. In order to suppress the constraint relationship between these factors, the printed-circuit-board copper heat sink composite substrate (PCCS) was assembled by adhesion and pressure implantation, and UVA LEDs with optical-thermal-electrical isolation packaging structure were prepared. The light, electricity, and heat in this structure flow in their respective pathways, greatly reducing the mutual influence. Compared with commercial Al2O3 -Ceramic devices, under the driving current of 1000 mA and testing conditions of 25 ℃, the junction temperature of PCCS devices decreased by 13.3 ℃, and the thermal resistance decreased by 5 K/W with a higher stable-transient ratio. At 25 ℃, the lifespan of PCCS devices is 20 % longer than that of Al2O3-Ceramic devices. The above results indicate that the optical-thermal-electrical isolation packaging structure effectively solves the problem of reduced light output efficiency caused by heat accumulation through reasonable separation of the pathways, resulting in significant application potential in improving the luminous efficiency and reliability of UVA LED devices.

Enhancing the optical properties of organic fluorine compound-encapsulated AlGaN-based ultraviolet light-emitting diodes with Ni/Au reflective electrodes

The development of AlGaN-based high-efficiency UVC-LEDs capable of effectively eliminating viruses and bacteria is desired. In this study, we demonstrate a significant improvement in optical output power (LOP) by applying optical interference technology and organic fluorine compound packaging technology. Experiments and calculations revealed that an improvement in LED die LOP was achieved through adjusting the optical length to approximately 0.7·λ n, resulting in an amplification of light intensity caused by the interference of light emitted perpendicular to the die. Furthermore, by coating the LED die with an organic fluorine compound and packaging it in a quartz lens, the LOP increased by a factor of 1.5. Ray-tracing analysis showed that, due to optical interference, the LOP of the LED die was more dependent on the light output from the top surface than from the side.