Abstract
Enhancing the conductivity in Al-rich n-AlGaN is a key issue for realizing AlGaN-based ultraviolet light-emitting diodes (UV-LEDs) with low operating voltage and high wall-plug efficiency, especially in a planar geometry of flip–chip configuration. An approach of modulation doping is herein proposed, where an alternating-layer structure consisting of Si-doped and unintentionally doped AlGaN is assembled to achieve the spatial separation of electron activation and transport. As massive electrons diffuse from the AlGaN:Si layer into the neighboring i-AlGaN ones and then drift, the ionized-donor scattering is effectively weakened, leading to a significant enhancement of mobility as well as conductivity. An impressive electrical property of n-Al0.6Ga0.4N with a lateral conductivity of 201.7 S/cm is realized as a consequence, being 2.1 times of that in the continuously doped one. Furthermore, the operating voltage of 280 nm UV-LEDs is correspondingly reduced by 0.1–0.2 V at 100 mA by adopting modulation-doped n-AlGaN in the n-cladding layer.
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