Ultrathin Layer Research Articles

Construction of sub-10nm ultra-thin polyamide layer using porous GOQDs-AGQDs interlayer

The application of high-performance polyamide nanofiltration membranes with controllable structures shows promising prospects in fields such as seawater desalination and wastewater treatment. In this study, a high-performance polyamide composite nanofiltration membrane with sub-10nm ultra-thin separation layer was designed and fabricated using a hydrophilic porous GOQDs-AGQDs (graphene oxide quantum dots-amino graphene quantum dots) interlayer to reconstruct the substrate architecture. The GOQDs-AGQDs interlayer not only improved the uniformity and smoothness of the microporous substrate, but also could form hydrogen bond with amine monomers to effectively inhibit its diffusion, thereby effectively slowing down the interfacial polymerization process and facilitating the formation of an ultra-thin, smooth and dense polyamide (PA) layer. The results demonstrate that the optimized PA/GOQDs-AGQDs/PES membrane achieved a PA separation layer thickness as low as 9.4 nm, with a permeation flux of 27.2 L·m−2 ·h−1·bar−1, nearly three times that of the original PA/PES membrane. Simultaneously, it enhanced the Na2SO4 rejection rate to 97.1 %, achieving synchronous improvements in permeability and selectivity. Additionally, the PA/GOQDs-AGQDs/PES composite membrane exhibited relatively low surface roughness and demonstrated excellent long-term stability. This work presents a novel strategy for the controllable fabrication of high-performance nanofiltration membranes.

Synergistic Coordination and Surface Plasmon Resonance of Quantum Dots in Enhancing Photocatalytic Hydrogen Evolution.

Recent studies have revealed that the integration of metal nanoparticles (NPs) with photocatalysts allows the metal NPs to serve as cocatalysts, significantly enhancing reactant efficiency near nanostructures through the surface plasmon resonance (SPR) effect. On this basis, we synthesized highly reactive FePt quantum dots (FePt QDs) with tailored configurations, manipulating the Pt coordination environment and combining FePt QDs with ultrathin two-dimensional nickel metal-organic layer (Ni-MOL) nanosheets. X-ray absorption fine spectroscopy (XAFS) confirmed the distinctive Pt-Fe configuration after photoactivation. The optimized loading amount of FePt QDs led to a hydrogen evolution reaction (HER) yield of 113 mmol·g-1·h-1 after activation, with the catalyst remaining stable over five cycles. The improved reaction efficiency stemmed from Pt coordination adjustments and a localized SPR effect, supported by ultraviolet-visible (UV-vis), infrared (IR), Raman, and XAFS characterizations. A comparative analysis was conducted with Ni-MOL deposited with platinum NPs, further underscoring the distinct advantages of FePt QDs and corroborating by density functional theory (DFT) calculations, which revealed favorable d-band center properties. These findings offer a promising avenue for the development of highly efficient and stable nanoalloy photocatalysts.

Ultrathin Ga2O3 Photodetector with Fast Response and Trajectory Tracking Capability Fabricated by Liquid Metal Oxidation.

Low-dimensional Ga2O3 demonstrates a unique ultraviolet photoresponse and could be used in various electronic and optical systems. However, the low-dimensional Ga2O3 photodetector is faced with the challenges of a complex preparation process and poor device performance. In this work, ultrathin Ga2O3 layers with ∼7 nm thickness are prepared on quartz rods by UV exposure to liquid gallium. Benefiting from low-density oxygen vacancy defects cured by UV exposure, the low-dimensional Ga2O3 photodetector exhibits a high response speed (rise: 64.7 μs; fall: 51.4 μs) and an exceptional linear dynamic range of 120 dB. Furthermore, the photodetector array based on these ultrathin Ga2O3 shows an effective trajectory tracking capability by monitoring UV source motion. This work develops a simple preparation method to construct a low-dimensional UV photodetector array with fast response and useful trajectory tracking capability, exhibiting the significance of ultrathin Ga2O3 in UV optoelectronics.

Photoemission Study on Si and Ge Segregation on Al/Si0.8Ge0.2 Structures

We have demonstrated the formation of an ultrathin Si and Ge layer on an Al/Si0.8Ge0.2(111) structure caused by controlling the annealing condition. From the XPS characteristics, the annealing temperature, rather than the time, was found to be important in controlling the Si and Ge segregation. Also, by thermal annealing in N2 ambient, the segregated Ge on the Al/Si0.8Ge0.2 structure was found to be stable and resistant to oxidation due to the surface Al oxide layer and the segregated Si. We also found that Ge atoms were highly selectively segregated from the Al/Si0.8Ge0.2(111) structure below 500ºC. It was also found that Ge atoms could be selectively segregated from the Al/Si0.8Ge0.2(111) structure by rapid thermal annealing. The results will lead to the development of two-dimensional Ge crystals that are highly compatible with Si ultra-large-scale integration processing.

Thin-film composite nanofiltration membrane based on polysulfonamide for extremely acidic conditions

Increasing the acid stability and selectivity of nanofiltration (NF) membranes, which are used to treat acidic industrial effluents, is highly beneficial. A series of acid-stable NF membranes featuring polysulfonamide (PSA) separation layers were prepared through interfacial polymerization of branched polyethyleneimine (PEI), polyethylenepolyamine (PPA), and 1,3-benzenedisulfonyl chloride (BDSC) on a porous polyethersulfone (PES) substrate. The optimization of the membrane filtration performance involved analyzing the monomer content in both the aqueous and organic phases and adjusting the PEI-to-PPA ratio, thereby preparing ultrathin PSA layers. The influence of the PSA morphology and structure on the membrane filtration performance was examined. The most effectively optimized sample demonstrated a MgSO4 rejection rate of 95.4 ± 0.4 % and a water flux of 55.4 ± 1 L m–2h−1 at a pressure of 2.0 MPa. The acid stability of the membrane was assessed by examining the permeation, separation, and physicochemical properties before and after undergoing static acid-soaking tests. Following a 5-month exposure to 20 % (w/v) HCl or 20 % (w/v) H2SO4 aqueous solution, the optimal membrane maintained a MgSO4 rejection of 92.6 % at neutral pH, with a permeation flux of 68.2 L m–2h−1 under 2.0 MPa. Owing to their excellent selectivity, enhanced acid stability, structural controllability, and ease of functionalization, these PSA-NF membranes are promising for use in industries such as mining, semiconductor, and electroplating.

Theoretical investigation of [formula omitted]-type doping modulated interlayer magnetic and potential topological phases transition in MnSb[formula omitted]Te[formula omitted] based systems

MnSb2Te4, as an important member of intrinsic magnetic topological insulator MnBi2Te4 family, shows promise for realizing quantum anomalous Hall effect (QAHE). However, interlayer A-type antiferromagnetic coupling has been a challenge to successfully observe this novel physical phenomenon in MnSb2Te4 system. Based on density functional theory, our calculations demonstrated that doping p-type non-magnetic elements into 2 SLs and 3 SLs of MnSb2Te4 can induce a magnetic phase transition from interlayer antiferromagnetic to ferromagnetic states with a Curie temperature up to 52.2 K. Moreover, our calculations present that interlayer ferromagnetic coupling and band gap in Ca-doped 2 SLs MnSb2Te4 systems can be further tuned by applying compressive strain. In addition, the interlayer ferromagnetic coupling in MnSb2Te4/Sb2Te3/MnSb2Te4 sandwich heterostructure by p-type doping can be enhanced, The detailed electronic structure analysis show that realization of interlayer ferromagnetic coupling is mainly related to a redistribution of d-electron orbital occupancy in Mn atoms of various SL layers. These findings not only advance the understanding of interlayer ferromagnetic order in ultrathin MnSb2Te4 layers, but also provide new way to realize the QAHE in MnSb2Te4 based systems without introducing extraneous magnetic disorder.

Ternary TiO2/MoS2/ZnO hetero-nanostructure based multifunctional sensing devices

Novel sensing applications benefit from multifunctional nanomaterials responsive to various external stimuli such as mechanics, electricity, light, humidity, or pollution. While few such materials occur naturally, the careful design of synergized nanomaterials unifies the cross-coupled properties which are weak or absent in single-phase materials. In this study, 2D MoS2 integrated with ultrathin dielectric oxide layers forms hetero-nanostructures with significant impacts on carrier transport. The ternary TiO2/MoS2/ZnO hetero-nanostructures, along with their individual properties, improve the performance of multifunctional sensing devices. The synthesized hetero-nanostructure exhibits a responsivity of up to 16 mA/W to 700 nm light and responds to 5 ppm ammonia gas at room temperature. These enhancements are attributed to interface charge transfer and photogating effects. The ternary TiO2/MoS2/ZnO hetero-nanostructure is compatible with existing semiconductor fabrication technologies, making it feasible to integrate into flexible, lightweight semiconductor devices and circuits. These results may inspire new photodetectors and sensing devices based on two-dimensional (2D) layered materials for IoT applications.

High-Performance Planar Broadband Hot-Electron Photodetection through Platinum-Dielectric Triple Junctions.

Recently, planar and broadband hot-electron photodetectors (HE PDs) were established but exhibited degraded performances due to the adoptions of the single-junction configurations and the utilizations of absorbable films with thicknesses larger than the electronic mean free path. In this work, we present a five-layer design for planar HE PDs assisted by triple junctions in which an ultrathin Pt layer dominates the broadband and displays strong optical absorption (>0.9 from 900 nm to 1700 nm). Optical studies reveal that the optical admittance matching between optical admittances of designed device and air at all interested wavelengths is responsible for broadband light-trapping that induces prominent energy depositions in Pt layers. Electrical investigations show that, benefitting from suppressed hot-electron transport losses and increased hot-electron harvesting junctions, the predicted responsivity of the designed HE PD is up to 8.51 mA/W at 900 nm. Moreover, the high average absorption (responsivity) of 0.96 (3.66 mA/W) is substantially sustained over a broad incidence angle regardless of the polarizations of incident light. The comparison studies between five-layer and three-layer devices emphasize the superiority of five-layer design in strong optical absorption in Pt layers and efficient hot-electron extraction.

XPS investigations of thin epitaxial and magnetron tin layers surface physico-chemical state

Thin layers of the tin-oxygen system with nanometer thicknesses and structures based on them are relevant objects of development for use in modern devices, for example in microelectronics. The general miniaturization of electronic devices, the achievement of energy efficiency in the operation of such devices, and the optimal modes of their operation determine the strategies for using the tin-oxygen system structures. First of all, the justification of the tin-oxygen system nanolayers formation technique. The dependence of the formed nanolayers properties on the state of their surface is significant. The article contains the results of direct experimental studies of the composition and physico-chemical state of the tinoxygen system thin nanolayers surface. To form the studied structures, the popular and in-demand methods of magnetron sputtering and molecular beam epitaxy were used. The X-ray photoelectron spectroscopy was applied with the use of the synchrotron radiation which has a high intensity and the possibility of spectrum excitation energy optimal selection, which is important for a small amount of the studied material. After formation, the research objects were stored in laboratory conditions for several weeks before synchrotron studies. Differences in the surface composition and physico-chemical state of the thin tin layers formed by magnetron sputtering or epitaxially, and then oxidized naturally, are shown. Five monolayers of tin formed by the molecular beam epitaxy make it possible to diffuse atmospheric oxygen, which oxidizes the Si buffer layer located under the Sn nanolayer on a silicon substrate. At the same time, the surface of the tin film obtained by magnetron sputtering is close to the natural oxide SnO2-x in its physico-chemical state. The results of the work can be useful for determining the optimal approaches to the formation and subsequent modification of thin and ultrathin layers of tin oxides for the tasks of creating active layers of modern electronic devices

Dual-Mode Semiconductor Device Enabling Optoelectronic Detection and Neuromorphic Processing with Extended Spectral Responsivity.

High-performance semiconductor devices capable of multiple functions are pivotal in meeting the challenges of miniaturization and integration in advanced technologies. Despite the inherent difficulties of incorporating dual functionality within a single device, a high-performance, dual-mode device is reported. This device integrates an ultra-thin Al2O3 passivation layer with a PbS/Si hybrid heterojunction, which can simultaneously enable optoelectronic detection and neuromorphic operation. In mode 1, the device efficiently separates photo-generated electron-hole pairs, exhibiting an ultra-wide spectral response from ultraviolet (265nm) to near-infrared (1650nm) wavelengths. It also reproduces high-quality images of 256×256 pixels, achieving a Q-value as low as 0.00437µWcm- 2 at a light intensity of 8.58µWcm- 2. Meanwhile, when in mode 2, the as-assembled device with typical persistent photoconductivity (PPC) behavior can act as a neuromorphic device, which can achieve 96.5% accuracy in classifying standard digits underscoring its efficacy in temporal information processing. It is believed that the present dual-function devices potentially advance the multifunctionality and miniaturization of chips for intelligence applications.

Ultrathin metal-dielectric planar interface for high-performance photonic spin Hall effect

Abstract This study explores the photonic spin Hall effect (PSHE) with a focus on its sensitivity to incident wave polarization and physical parameter variations. Traditionally surface plasmonic resonance (SPR) systems mainly enhance H-polarized PSHE. However, our proposed method involves an ultrathin metal layer, capped with a glass dielectric layer on a glass substrate, to achieve high-performance PSHE for both H- and V-polarization waves. This high-performance PSHE in terms of enhancement in PSHE magnitudes arises from the simultaneous presence of SPR and waveguiding effects, resulting in the emergence of hybrid TE and TM modes. Investigating Au and Ag ultrathin metal layers, we find that the highest H-polarized PSHE occurs at ~1.52 × 10^6 nm and ~2.05 × 10^5 nm for Au and Ag, respectively. Similarly, for Vpolarized incident light, maximum enhanced PSHE is observed at ~1.58 × 10^5 nm and ~9.48 × 10^4 nm for Au and Ag, respectively. By adjusting the thickness of the metal and/or glass cap layer, precise control over PSHE amplitude and active polarization response is achievable. This research unveils unique capabilities for generating hybrid modes that enhance PSHE for both polarizations, offering a potential platform for developing tunable polarizationfavorable spin optics optoelectronic devices.

Vertical GaN Schottky barrier diodes with ohmic contact on N-polar by the atomic layer deposition of aluminum oxide interfacial layer

In this paper, high-performance vertical GaN on GaN Schottky Barrier Diodes (SBDs) on 2-inch free-standing (FS)-GaN is presented with the specific on-state resistance (Ron) of 1.34 mΩ·cm2, breakdown voltage (Vbr) of 1150 V and figure of merit (FOM) of 0.98 GW/cm2. He-implanted edge termination (ET) structure is introduced to alleviate the peak electric field concentration effect at the anode edge of GaN SBDs. Furthermore, A new ohmic contact structure is explored by atomic layer deposition (ALD)-grown AlOx interfacial layer. Based on the self-cleaning effect of ALD and Ultra-thin AlOx interfacial layer, the Fermi-level Pinning (FLP) effect is alleviated effectively, the specific contact resistivity (ρc) on N-polar GaN was reduced from 1.63 × 10−3 to 7.14 × 10−5 Ω·cm2.The temperature variation test demonstrate the devices has potential of temperature sensors under high voltage and high temperature.

Impact of Al profile in high-Al content AlGaN/GaN HEMTs on the 2DEG properties

Ultra-thin high-Al content barrier layers can enable improved gate control and high-frequency operation of AlGaN/GaN high electron mobility transistors (HEMTs) but the precise composition control is very challenging. In this work, we investigate the compositional profiles of AlxGa1−xN/GaN HEMT structures with targeted Al content in the barrier layer, x = 0.50, 0.70, and 1, and thickness in the sub-10 nm range in correlation with the two-dimensional electron gas (2DEG) properties. The HEMT structures are grown by metal-organic chemical vapor deposition on SiC. The maximum Al content in the barrier layer, experimentally determined by scanning transmission electron microscopy combined with energy-dispersive x-ray spectroscopy, is found to be lower than that intended and the deviations from the designed structures increase progressively with increasing x. Compositionally sharp interface between GaN and Al0.46Ga0.54N and box-like Al profile is achieved for intended x∼0.50 while pronounced Al grading is found in the samples with intended x of 0.70 and 1, with a maximum Al content of 0.78 reached for the HEMT structure with intended AlN barrier layer. The impact of the experimentally determined Al profiles on the 2DEG properties, obtained by contactless and electrical Hall effect measurements and coupled with self-consistent solution of the Poisson–Schrödinger equation, is evaluated and discussed. It is shown that the observed deviations from the intended Al profiles have a negative effect on the 2DEG confinement and result in reduced mobility parameters, which have significant implications for the implementation of high-Al content AlGaN/GaN structures in high-frequency devices.

Crown ether regulated nanocomposite membrane with lithium channels for highly selective Li+/Mg2+ separation

Efficient extraction of lithium from salt lakes is gaining more and more attention because it is regarded as a strategic resource. However, the poor Li+/Mg2+ selectivity of traditional polymer membrane hampers its application. Herein, with concerns over worldwide demands for lithium resource, we developed a novel GO-based nanocomposite membrane with crown ether for efficient lithium recovery. The positively-charged polyethyleneimine (PEI) and negatively-charged graphene oxide (GO) are alternately assembly on substrate, combining with the post-crosslinking with trimesoyl chloride (TMC), which guarantees the formation of ultrathin and dense separation layer with a thickness of around 15 nm. Importantly, crown ether which has a specific recognition to Li+ is subsequently introduced into the membrane to construct lithium channels for fast transport of Li+. Based on the tailor-made design, the optimal membrane exhibits a low rejection of 33.3% to LiCl, while a high rejection of 94.8% to MgCl2. Moreover, excellent Li+/Mg2+ selectivities with separation factors of 16.6 and 17.5 for the simulated salt lakes with Mg2+/Li+ mass ratios of 20 and 1, respectively are achieved. The high-performance nanocomposite membrane with lithium channels shows a promising application associated with lithium extraction from salt lakes.

Modulating low-temperature interfacial polymerization with NaHCO3 for high-performance ultrathin nanofiltration membranes

Conventional interfacial polymerization (IP) encounters significant challenges in achieving the desired nanofiltration (NF) membrane structure, owing to uncontrolled diffusion and ultrafast polymerization. Our study introduced carbonates into the low-temperature interfacial polymerization (LTIP) process to precisely regulate the diffusion of amine monomers and polymerization kinetics. Carbonates in the aqueous phase restrict the diffusion of amine monomers while promoting the generation of nanobubbles. Further utilization of the low-temperature oil phase not only retards polymerization but also facilitates the formation of foam nanostructures in the polyamide layer. Density functional theory calculations and molecular dynamics simulations revealed the mechanisms underlying the regulation of amine monomer diffusion and gas-bubble release by carbonates and LTIP. The fabricated membrane has a smoother, ultrathin separation layer while maintaining a high permeability of 35.0 L·m−2·h−1·bar−1 (nearly doubled compared with the pristine membrane) and high Na2SO4 rejection of 99.5 %. This study confirms the practicality of the carbonate-modulated LTIP strategy.

Microscopic characterizations for 2D material-based advanced electronics

Two-dimensional (2D) materials have gained significant attention as potential candidates for next-generation electronics, owing to their unique properties such as ultrathin layer thickness, mechanical flexibility, and tunable bandgaps. The distinctive characteristics of 2D materials necessitate the development of nanoscale advanced characterization methods. In this review, we explore the role of microscopy techniques in developing 2D materials-based electronics, from material synthesis and characterization to device performance and reliability. We address the applications of microscopies by delving into the perspectives of channel materials, metal contacts, dielectric materials, and device architectures. Additionally, we provide an outlook on the future directions and potential utilization of microscopy techniques in future 2D semiconductor industry.

Magnetic Domain and Structural Defects Size in Ultrathin Films

Herein, a model is proposed for measuring the structural defects size r0 in an ultrathin magnetic layer with perpendicular magnetic anisotropy. Based on the observations of magnetic domains in Ta/Pt/Co/Pt ultrathin films, using polar magneto‐optical Kerr effect microscopy and measurements of their magnetic anisotropies, the correlation between magnetic domains size D and structural defects size r0, as well as the defects concentration parameter αK, which designates the degree of pinning, has been modeled. The average r0 value found is high in the sample with unannealed buffer layers and considerably decreases with annealing. It is 6.17 nm with unannealed Ta/Pt buffer layers, 1.06 nm in sample with Ta/Pt buffer layers annealed at 423 K, and 0.49 nm in that with buffer layers annealed at 573 K. The significant drop of r0 is in good agreement with the high depinning noted with buffer layers annealing in recent work.

Ferroelectric tunnel junctions based on a HfO2/dielectric composite barrier

The ferroelectric tunnel junction (FTJ), which possesses a simple structure, low power consumption, high operation speed, and nondestructive reading, has attracted great attention for the application of next-generation nonvolatile memory. The complementary metal–oxide–semiconductor-compatible hafnium oxide (HfO2) ferroelectric thin film found in the recent decade is promising for the scalability and industrialization of FTJs. However, the electric performance, such as the tunneling electroresistance (TER) effect, of the current HfO2-based FTJs is not very satisfactory. In this work, we propose a type of high-performance HfO2-based FTJ by utilizing a ferroelectric/dielectric composite barrier strategy. Using density functional theory calculations, we study the electronic and transport properties of the designed Ni/HfO2/MgS/Ni (001) FTJ and demonstrate that the introduction of an ultra-thin non-polar MgS layer facilitates the ferroelectric control of effective potential barrier thickness and leads to a significant TER effect. The OFF/ON resistance ratio of the designed FTJ is found to exceed 4 × 103 based on the transmission calculation. Such an enhanced performance is driven by the resonant tunneling effect of the ON state, which significantly increases transmission across the FTJ when the ferroelectric polarization of HfO2 is pointing to the non-polar layer due to the aroused electron accumulation at the HfO2/MgS interface. Our results provide significant insight for the understanding and development of the FTJs based on the HfO2 ferroelectric/non-polar composite barrier.

Perovskite/silicon tandem solar cells with bilayer interface passivation.

Two-terminal monolithic perovskite/silicon tandem solar cells demonstrate huge advantages in power conversion efficiency compared with their respective single-junction counterparts1,2. However, suppressing interfacial recombination at the wide-bandgap perovskite/electron transport layer interface, without compromising its superior charge transport performance, remains a substantial challenge for perovskite/silicon tandem cells3,4. By exploiting the nanoscale discretely distributed lithium fluoride ultrathin layer followed by an additional deposition of diammonium diiodide molecule, we have devised a bilayer-intertwined passivation strategy that combines efficient electron extraction with further suppression of non-radiative recombination. We constructed perovskite/silicon tandem devices on a double-textured Czochralski-based silicon heterojunction cell, which featured a mildly textured front surface and a heavily textured rear surface, leading to simultaneously enhanced photocurrent and uncompromised rear passivation. The resulting perovskite/silicon tandem achieved an independently certified stabilized power conversion efficiency of 33.89%, accompanied by an impressive fill factor of 83.0% and an open-circuit voltage of nearly 1.97 V. To the best of our knowledge, this represents the first reported certified efficiency of a two-junction tandem solar cell exceeding the single-junction Shockley-Queisser limit of 33.7%.

Enhancing light absorption in ultra-thin perovskite solar cells using plasmonic gold nanoparticle clusters

Perovskite solar cells with ultra-thin absorber layers offer potential cost savings in manufacturing, but their reduced thickness can limit light absorption and efficiency. This work explores using plasmonic gold nanoparticles as a light-trapping strategy to compensate for lower absorption in ultra-thin perovskite devices. Numerical simulations investigate embedding 25 nm radius gold nanoparticles within the 200 nm thick perovskite active layer to boost optical absorption through near-field enhancement and light scattering effects. The solar cell structure incorporating these plasmonic nanoparticles achieves a substantially higher short-circuit current density of 23.10 mA cm−2 compared to 18.70 mA cm−2 for a reference cell without nanoparticles. This study provides design approaches for realizing high-efficiency yet cost-effective ultra-thin perovskite photovoltaics by harnessing plasmonic light-trapping techniques. The results display methodologies to improve photon absorption and power conversion in thin-film perovskite devices through strategic nanoparticle integration.