Types Of Wafer Research Articles

Correlation analysis of sampled wafer profile maps based on a deep reconstruction model

In the semiconductor manufacturing process, various kinds of metrology and test data can form different types of wafer maps. By analyzing the correlation of multiple types of wafer maps, especially for the wafer bin maps (WBMs) and the wafer profile maps, the faulty inline manufacturing steps strongly correlated with end-of-line yield can be found for yield improvement. This paper proposes a correlation analysis method based on a deep reconstruction model to integrate the knowledge among multiple types of wafer maps for root cause analysis. First, the sparsely sampled wafer profile maps are restored to original wafer profile maps through the deep reconstruction model for obtaining more information. And then, the correlation between the WBMs and the reconstructed profile maps is calculated. The process step whose wafer profile maps have the highest correlation with WBMs is highly related to the fault. Experiments on the real-world dataset demonstrate that the proposed method can restore the wafer profile map well and has high accuracy in matching the relevant process wafer profile map based on the WBMs.

Direct Wafer Bonding Methods: A Practical Process Selection Guide

The development of various low temperature wafer bonding methods in early 2000’s marked an important milestone for the direct wafer bonding applications. Wafer bonding was adopted in the microelectronics fabs as the use of plasma activated wafer bonding allowed for meeting the CMOS manufacturing requirements in terms of contamination control as well as thermal budget limitations (less than 400°C).A wafer bonding technique reported in the literature already in late 80’s – early 90’s allowed even for room temperature bonding of some materials but despite this important feature it remained mainly at the fundamental research level, with not so numerous applications in semiconductor industry. This technique is known mainly as “surface activated bonding”, “SAB” or “room temperature covalent bonding”. Over the past decade, the interest in surface activated bonding increased significantly as excellent results were reported particularly for compound semiconductors applications (e.g. solar cells manufacturing, power devices, etc.). With three types of direct wafer bonding processes, high, low and room temperature, sometimes people are facing issues in selecting the proper wafer bonding process. Our goal in this presentation is to introduce the specific features of each technique and present their benefits with applications examples. Technical as well as cost – related benefits will be emphasized.An overview of the main metrology methods used traditionally for wafer bonding-based applications, as well as new methods adopted based on newest applications fields will be presented.

A Wafer Prealignment Algorithm Based on Fourier Transform and Least Square Regression

Automatic wafer prealignment is an important process in wafer manufacturing, whereby its flat edge is set at a predefined angle and its center is set in a predefined position; translational and rotational movement compensate for deviation of the wafer. However, as the traditional wafer prealignment algorithm depends on marked templates at the training stage when the type of wafer is changed, the templates need to be retrained. This paper proposes a new wafer prealignment algorithm, based on Fourier transform for orientation prealignment and least square regression for position prealignment, which will automatically adapt to different types of wafers in 2-D space. Results from experiments with the proposed algorithm on a laser-scribing machine using two types of wafer show that the orientation prealignment achieved an accuracy of 0.05°, the position prealignment achieved an accuracy of 5 pixels, and the average operation time was approximately 1.5 s. As prealignment algorithm therefore meets real-time efficiency and precision requirements, it is suitable for use with semiconductor devices.

Photo-assisted adsorption of gold nanoparticles onto a silicon substrate

We report on a photo-assisted adsorption of gold nanoparticles on a silicon substrate studied using atomic-force microscopy and secondary ion mass-spectrometry. Depending on a silicon conductivity type (n-Si or p-Si), the amount of photo-assisted adsorbed gold nanoparticles either increases (n-Si) or decreases (p-Si) on irradiation. In addition, the impacts of a cationic polyelectrolyte monolayer and adsorption time were also revealed. The polyelectrolyte layer enhances the adsorption of the gold nanoparticles but decreases the influence of light. The results of the photo-assisted adsorption on two types of silicon wafer were explained by electron processes at the substrate/solution interface.

The Characteristics of Gettering Ability in Advanced Multi-Chip Packaging Thinned Wafer

Gettering property of Cu and Ni was investigated after MCP thinned process wafer. The test samples were prepared to various dopant concentration types of CZ or Epitaxial wafer, and various processed thinning conditions corresponding with a total remaining thickness of 100 µm, 50 µm, and 30 µm by backside grinding. It was found that the 30 µm thinned wafer maintains its Cu gettering ability for heavily boron doped samples but Ni contamination decrease the gettering ability for all samples.

태양광 실리콘 웨이퍼 세정제 개발

태양전지 제조공정 중 잉곳의 절삭공정 후 진행되는 태양광 실리콘 웨이퍼 세정에 관한 연구를 수행하였다. 태양광 실리콘 웨이퍼는 잉곳의 생산방법에 따라 단결정과 다결정 웨이퍼로 분류되고, 절삭 방법에 따라서는 슬러리로 절삭한 웨이퍼와 다이아몬드 와이어로 절삭한 웨이퍼로 구분할 수 있으며, 이의 방법들에 따라 웨이퍼 표면과 오염원이 달라질 수 있다. 본 연구에서는 세정대상물에 따라 오염원과 웨이퍼 표면의 특성을 관찰하였고 적합한 세정제를 개발하여 물성 및 세정성을 평가하여 적용성을 확인하고자 하였다. 개발된 세정제로 세정한 웨이퍼는 XPS 분석결과 잔류 오염물질이 관찰되지 않았으며, 표면조직화 후 균일한 패턴을 형성함을 확인할 수 있었다. 또한, 개발된 세정제를 웨이퍼 생산현장에서 테스트를 진행하여 기존 세정제보다 우수한 세정결과를 확보하였다. Cleaning procedure of solar silicon wafer, following ingot sawing process in solar cell production is studied. Types of solar silicon wafer can be divided into monocrystalline or multicrystalline, and slurry sawn wafer or diamond sawn wafer according to the ingot growing methods and the sawing methods, respectively. Wafer surface and contaminants can vary with these methods. The characterisitics of contaminants and wafer surface are investigated for each cleaning substrate, and appropriate cleaning agents are developed. Physical properties and cleaning ability of the cleaning agents are evaluated in order to verify the application in the industry. The wafers cleaned with the cleaning agents do not show any residual contaminants when analyzed by XPS and regular patterns are formed after texturization. Furthermore, the cleaning agents are applied in the production industry, which shows superior cleaning results compared to the existing cleaning agents.

PDMS spreading morphological patterns on substrates of different hydrophilicity in air vacuum and water

In paper has been to investigate the morphological patterns and kinetics of PDMS spreading on silicon wafer using combination of techniques like ellipsometry, atomic force microscope (AFM), scanning electron microscope (SEM) and optical microscopy. A macroscopic silicone oil drops as well as PDMS water based emulsions were studied after deposition on a flat surface of silicon wafer in air, water and vacuum. Our own measurements using an imaging ellipsometer, which also clearly shows the presence of a precursor film. The diffusion constant of this film, measured with a 60,000 cS PDMS sample spreading on a hydrophilic silicon wafer is D f = 1.4 × 10 −11 m 2/s. Regardless of their size, density and method of deposition, droplets on both types of wafer (hydrophilic and hydrophobic) flatten out over a period of many hours, up to 3 days. During this process neighbouring droplets may coalesce, but there is strong evidence that some of the PDMS from the droplets migrates into a thin, continuous film that covers the surface in between droplets. The thin film appears to be ubiquitous if there has been any deposition of PDMS. However, this statement needs further verification. One question is whether the film forms immediately after forced drying, or whether in some or all cases it only forms by spreading from isolated droplets as they slowly flatten out.

Infrared spectroscopy as a probe of fundamental processes in microelectronics: silicon wafer cleaning and bonding

In this paper, we review our recent infrared studies of the fundamental physical and chemical processes occurring at the interface of bonded silicon wafers, as a function of surface preparation and annealing temperature. We present a brief overview of the practical aspects of silicon-wafer bonding and the techniques used to evaluate the interface integrity, which highlight the need for fundamental studies of the microscopic interface phenomena. Importantly, we show that the interface between two silicon wafers approximates an ideal spectroscopic environment, in that there is a 28-fold enhancement in the sensitivity to the normal component of the interface absorption over any other surface optical geometry. Furthermore, the interface region is almost infinitely stable at room temperature, but can exhibit partial pressures ranging from near vacuum to several atmospheres upon annealing. We present results for two distinct types of wafer bonding: hydrophobic (hydrogen-terminated) and hydrophilic (oxide-terminated), since the origin of the initial attraction between the opposing surfaces is quite different in the two cases. Specifically, we show that ideally hydrogen-terminated Si(111) surfaces come within a few Å, under the influence of a Van der Waals attraction, as evidenced by a pronounced perturbation of the isolated SiH stretch mode. In contrast, the initial attraction between hydrophilic surfaces is via hydrogen bonding, which is mediated by the presence of 2–4 monolayers of water that are trapped at the interface upon room-temperature joining. We demonstrate that vibrational spectroscopy provides unprecedented mechanistic insight into the thermal evolution of the molecular interface, which necessarily has a profound influence on the bonding process. Throughout the paper, emphasis is given to the need for a wide variety of additional (fundamental) studies of the surface phenomena occurring in these novel, technologically important systems.

Impact of Chemical and Epitaxial Treatment on Surface Defects on Silicon Wafers

AbstractDefects on polished as well as hot SC1 treated silicon wafers were investigated with an Atomic Force Microscope (AFM) and Surface Scanning Inspection Systems (SSIS). Measurement with two SSIS of different type allows to identify most of the surface defects as non particulate scatterers. AFM of these defects reveals tiny pits or groups of pits. An almost linear relation is found between the geometrical lateral defect dimension and their average size in units of LSE (Latex Sphere Equivalent; an effective measure for the scattering cross section) as reported by one of the SSIS for the defects on wafers treated with hot SC1. Growth rates of about 40 nmLSE/h are observed for the defects during subsequent treatments of wafers with hot SC1. The LSE-size distribution of as-grown defects with a peak at about 105 and 110 nmLSE is obtained for two types of wafer by modeling the defect evolution during hot SC1 treatment. The number of surface flaws ≥ 0.12 μmLSE on a substrate is reduced by two orders of magnitude for epitaxial layers as thin as 1.5 μm.

Van der Waals bonding of GaAs on Pd leads to a permanent, solid-phase-topotaxial, metallurgical bond

Various forms of wafer bonding have now emerged as a serious competitor to heteroepitaxy for optoelectronic integration of dissimilar semiconductor materials. Among the types of wafer bonding, perhaps the most flexible is that which employs free-standing III–V films as created by epitaxial liftoff. For some purposes, weak Van der Waals forces provide an adequate bond between the native oxides of the III–V film and its new substrate. If the substrate is coated by palladium however, a low temperature solid-phase-topotaxial reaction occurs, producing oriented Pd4GaAs under the GaAs film. In effect, the topotaxy comes about through mechanical contact alone. The resulting metallurgical bond is an ohmic contact, a thermal contact and a robust, permanent, adherent contact.

The growth of young cattle fed on dried grass alone and with barley 2. Effects on digestion

SUMMARY1. Young cattle were fed on four types of wafer containing chopped or coarsely-milled dried grass, with or without 50% of barley.2. At slaughter, the alimentary tract of each animal was removed and the contents of each part were weighed and sampled to determine the extent and site of digestion. Chromic oxide was used as an indigestible marker.3. The form in which the grass was processed had no effect on any of the parameters measured.4. The dry-matter content of the digesta in all parts of the alimentary tract was significantly higher when barley was included in the wafers. The inclusion of barley decreased the proportion of acetic acid and increased the proportion of butyric acid in the rumen liquor. The proportions of propionic and valeric acids were unaffected. Barley also appeared to reduce the proportion of digestible dry matter which disappeared in the forestomachs (31·44%) compared with that when grass was given alone (42·59%).5. With grass alone about 70% of the apparently digestible cellulose disappeared from the forestomachs, but the technique used did not allow a good estimation of these proportions when mixed diets were given. The retention time of dry matter in the forestomachs was not affected by the diet but the inclusion of barley in the wafers increased the retention time of cellulose in the forestomachs.6. Of 1·6·1·9 kg of starch ingested in mixed diets, 92-96% was apparently digested in the forestomachs, and only 80-130 g per day escaped rumen fermentation. The intake of starch on diets of grass alone was negligible and almost all the soluble sugars were digested in the forestomachs.7. More N was recovered at the omasum than was ingested, but the different diets had no effect on the site of digestion of N.