Abstract
Gettering property of Cu and Ni was investigated after MCP thinned process wafer. The test samples were prepared to various dopant concentration types of CZ or Epitaxial wafer, and various processed thinning conditions corresponding with a total remaining thickness of 100 µm, 50 µm, and 30 µm by backside grinding. It was found that the 30 µm thinned wafer maintains its Cu gettering ability for heavily boron doped samples but Ni contamination decrease the gettering ability for all samples.
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