Characteristics Of Triode Research Articles

Research on the electronic switch of power management circuits for triboelectric nanogenerator

Nowadays, people are increasingly interested in how to collect clean energy from nature more effectively. As an emerging harvest, triboelectric nanogenerators (TENGs) can collect a wide range of clean energy from nature. However, the energy generated by TENG can not be used directly for driving various miniature electronics. In this study, we have designed a triboelectric nanogenerator for wind energy harvesting, which consists of two simple generator sets. In addition, a power management circuit based on this triboelectric nanogenerator has been designed, which consists of a rectifier section, an electronic switch section, and a filter section. Among them, the most important part is the electronic switch section, and the electronic switch is based on triode characteristics. The experiment shows that the output voltage has been to stabilize at 3.89V when the triboelectric nanogenerator structure is in operation, and it can sustainably drive the LED in a stable working condition.

Nanodiamond vacuum field emission microtriode

Vacuum field emission (VFE) microtriodes utilizing nanodiamond emitters, integrated with a self-aligned silicon gate and an anode and fabricated by the mold-transfer patterning technique on a silicon-on-insulator (SOI) substrate, have been developed. The nanodiamond VFE microtriodes were fabricated by an integrated circuit-compatible microfabrication process in conjunction with chemical vapor deposition of nanodiamond into the inverted-pyramidal molds micropatterned on the SOI substrate, which provides precision controlled emitter-gate alignment and spacing. The devices exhibited triode characteristics showing anode field induced electron emission with gate controlled emission current modulation at low operating voltages, agreeing with its electron emission transport model. A high current density of 150 mA/cm2 is achievable from the device with the anode-emitter spacing of 4 μm at low operating voltages of Va = 48.5 V and Vg = 5 V. The ac characteristics of the microtriodes for signal amplification were experimentally evaluated, and the results conformed to the proposed small signal equivalent circuit model. The triode small signal parameters were found to be dependent on the device geometry, which could be tailored to meet various applications by designing the physical structures of the device with the desired parameters. These results demonstrate the potential use of the nanodiamond VFE microtriodes for vacuum microelectronic applications.

Multicasting Characteristics of All-Optical Triode Based on DFB Laser Diode Modules

Multicasting Characteristics of All-Optical Triode Based on DFB Laser Diode Modules

A flat corona-forming triode

The design of the flat corona-forming triode (FCT) providing a means for stabilizing the voltage of an electrostatic generator with intermediate screens is described. The steepness of the slope of the FCT and the master corona-forming triode characteristics is identical owing to the identity of the geometry of the working part. The current transmission of the master corona-forming triode to the conductor is >99% without deteriorating frequency characteristics due to selection of the leakage resistance value. Reliability of the FCT is verified by its long-term operation. The FCT does not require maintenance and can be installed on both spherical and cylindrical parts of the intermediate screen of the electrostatic generator in an accelerator.

The Photocurrent Characteristic Analysis of the Copper Phthalocyanine Organic Thin Film Transistor Irradiated by 700 nm Monochromatic Light

By using organic semiconductor CuPc as photosensitive materials, we prepared an organic thin film transistor with the vertical structure consisted of metal Cu/ organic semiconductor CuPc/ Al/ organic semiconductor CuPc/ indium tin oxide ITO. CuPc semiconductor material has good photosensitive properties in the 700 nm light. When the light signal irradiates organic semiconductor photosensitive material, the electron-hole exciton is separated into photocurrent in built-in electric field produced by organic semiconductor material/ metal schottky contact. It transforms into the driving current of organic photoelectric triode. By using its current amplification effect, the output current increase obviously. The test result shows that the I-V characteristics of the transistor are obvious unsaturated triode characteristics. When using 700 nm light to irradiate the device, the working current of the device increases obviously.

Nanodiamond vacuum field emission device with gate modulated triode characteristics

A three-electrode nanodiamond vacuum field emission (VFE) device with gate modulated triode characteristics is developed by integrating nanodiamond emitter with self-aligned silicon gate and anode, employing a mold transfer technique in conjunction with chemical vapor deposition of nanodiamond. Triode behavior showing emission current modulation with high current density at low operating voltages is achieved. A systematic analysis based on modified Fowler-Nordheim theory is used to analyze gate modulated VFE characteristics, confirming the triode field emission mechanism and operating principle. The realization of an efficient VFE microtriode has achieved the fundamental step for further development of vacuum integrated microelectronics.

Modeling Field Emission from Single-Tip Carbon Nanotube in Triode Configuration

ABSTRACT This article presents a simulation study on the field emission characteristics of a single carbon nanotube (CNT) cathode in the triode structure. Computer Simulation Technology (CST) Particle Studio (M/s Jyoti Electronics, India) was used to simulate the triode characteristics in relation to geometrical parameters, position of the CNT, and applied gate and anode potentials. The results emphasize the significance of simulation-based optimization of structural parameters and field conditions prior to actual fabrication of CNT field emitters.

Multicasting Characteristics of All-Optical Triode Based on Negative Feedback Semiconductor Optical Amplifiers

Multicasting Characteristics of All-Optical Triode Based on Negative Feedback Semiconductor Optical Amplifiers

An experiment on the velocity distribution of thermionic electrons

This paper describes an undergraduate experiment that yields the velocity distribution of thermionic electrons by analyzing the I-V characteristics of diodes and triodes. The experiment allows students to focus on the distribution function more than on difficulties arising from the complexity of thermionic emission. By using a simple model, the velocity distribution of thermionic electrons emitted by the vacuum tube cathode can be described by Maxwell’s distribution.

Nanocrystalline diamond lateral vacuum microtriode

A vacuum field emission microtriode in lateral configuration utilizing nanocrystalline diamond is presented. The nanodiamond lateral triode is a completely integrated device comprising a fingerlike emitter geometry with an ∼15nm tip radius of curvature, built-in gate, and anode with gate-cathode spacing of 3μm and anode-cathode spacing of 12μm. Triode characteristics, demonstrating gate-controlled emission current modulation with an anode current of 4μA and high transconductance of 0.3μS from a single emitter-finger at low device voltages (Vg<40V and Va∼65V), are obtained. The anode-induced electron emission conforms to Fowler–Nordheim tunneling. These observations from the first diamond lateral vacuum microtriode demonstrate a robust device for integrated circuit-compatible, temperature-, and radiation-insensitive vacuum micro-nanoelectronics.

Development of carbon nanotubes vacuum field emission differential amplifier integrated circuit

The authors have recently presented a novel concept for the development of vacuum field emission (VFE) differential amplifier (diff-amp) based on a matched pair of carbon nanotube (CNT) triodes and reported the preliminary device characteristics. In this study, they report the development of a CNT VFE diff-amp using CNT emitter arrays with smaller gate aperture, obtaining better device performance after postsynthesis rapid thermal annealing treatment. A pair of well-matched 2μm circular triode arrays showed a gate turn-on voltage of ∼40V and displayed similar triode characteristics in the saturation region. Moreover, the proposed two-step analytical model shows that the common-mode rejection ratio (CMRR) in decibels has a linear relationship with the applied gate voltage for the improved dual-triode diff-amp. In addition, the diff-amp demonstrates high CMRR (34–58dB) over a wide operating region.

A model for bridge-assisted electron exchange between two electrodes

We consider electron exchange between two metal electrodes mediated by two intermediate states. Our model Hamiltonian accounts for coupling to solvent and vibrational modes, and describes both elastic and inelastic processes. For the case of elastic transitions, we derive an explicit formula for the current that also includes the effect of an overlap between the solvation spheres of the two bridge states. For inelastic transitions we treat the case where one quantum mode interacts with one of the two bridge states; model calculations for the current as a function of the bias show a characteristic rise in the current whenever a new inelastic channel is opened. The system may show several features desirable for molecular electronics: rectification, negative differential resistance, and triode characteristics.

Fabrication of lateral-type thin-film edge field emitters by focused ion beam technique

Lateral-type, thin-film, edge field emitters have been fabricated with a focused ion beam (FIB) technique. A metal thin film deposited on the thermally oxidized silicon wafer was cut by a 20 keV gallium ion beam with a diameter of 1–2 μm to produce an emitter-collector gap. One of the advantages of the present procedure is such that the edge of the emitter could be sharpened owing to the current density distribution of the FIB. Another advantage is precise controllability of the emitter-gate gap. Nickel, chromium, and platinum emitters were fabricated. It was found that the chromium emitters exhibited superior properties as compared with the other materials. Electron emission characteristics were also investigated for the single emitters and for the arrayed emitters made of chromium. By adding an external collector, the device showed triode characteristics.

Characterization of silicon field emission microtriodes

The properties of single silicon field emission microtriodes have been examined. Gate and collector currents were measured in a vacuum of 2×10−8 Torr, and current–voltage, current–time, Fowler–Nordheim (I/V2 versus 1/V), and triode characteristics were determined. The data showed that the electron emission followed Fowler–Nordheim behavior. Single emitters had turn-on gate-to-cathode voltages (V) above 25 V (typically 50–90 V) and reproducible emission currents were measured in the range 5 pA–1 μA. Temporal fluctuations in emission current of 10%, 16%, and 40% were found for emission currents of 0.35, 50 nA, and 0.5 μA, respectively. The triode characteristics showed an Ig/Ic ratio of 0.25% and higher. Transconductances were found to be 3×10−8 Ω−1/tip. Electrostatic discharge and other device failure mechanisms have been observed and are described.

Triode characteristics and vacuum considerations of evaporated silicon microdevices

Fowler–Nordheim plots of evaporated Si cold emitter arrays, tested in triode configuration at 42 and 300 K, are found to be temperature independent. Fluctuations in emission current decrease with decreasing temperature. Pressure dependence of collector current, measured in a diode configuration for collector voltage range of 90–130 V, shows a sharp decrease if the pressure is raised above 2×10−4 Torr.

Temperature dependence of I–V characteristics of vacuum triodes from 24 to 300 K

Collector and gate currents as a function of collector voltage have been measured for molybdenum Spindt emitters, for n-type monocrystalline, and for n-type polycrystalline silicon emitters in the temperature range from 24 to 300 K and at a pressure of 1×10−8 Torr. The devices were tested in an as-fabricated mode with a modest in situ bake of 100 °C. The silicon devices which were fabricated in two different laboratories using different processes showed very little temperature dependencies, whereas the molybdenum emitter exhibited an increase in work function with decreasing temperature. It is conjectured that adsorption/desorption events from the background gas onto the emitter tips are responsible for the observed temperature dependency.

DC I-V characteristics of field emitter triodes

A simple model that is applicable to Spindt-type emitter triodes is presented. Experimentally, it has been observed that the gate current at zero collector voltage follows the same Fowler-Nordheim law as the collector current at high collector voltage, and that for low emission current densities, the sum of gate and collector currents is constant for any collector voltage and is given by the Fowler-Nordheim current I/sub FN/. Based on these observations, a simple model has been developed to calculate the I-V characteristics of a triode. By measuring the Fowler-Nordheim emission, emission area and field enhancement can be obtained assuming a value for the barrier height. Incorporating the gate current, the collector current can be calculated from I/sub c/=I/sub FN/-I/sub g/ as a function of collector voltage. The model's accuracy is best at low current density. At higher emission currents, deviations occur at low collector voltages because the constancy of gate and collector currents is violated. >

Simulation of geometrical change effects on electrical characteristics of micrometer-size vacuum triode with field emitters

Change in the electrical characteristic of a micro-vacuum triode with a field electron emitter, due to a change in physical dimension which may appear in the fabrication process, has been simulated. It has been found that the variation of the grid opening size more strongly affects the electrical characteristics of the triodes than the misalignment between the emitter tip and the center of the grid opening. It has also been found, however, that such effect can be minimized by biasing the grid at a proper voltage. Effects of grid position relative to the emitter tip have been also investigated in order to find better device geometry for high-frequency applications.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

All-optical triode device design using a nonlinear etalon and GRIN lenses

Optical triode characteristics of a nonlinear etalon combined with GRIN lenses are investigated. This configuration facilitates adjustment of detuning by a factor of 10-50 and enables a high on-off ratio operation using a double detuning operation. An optical gate and spatial switches are also fabricated using this configuration.

Electrical characteristics of MOSFET's utilizing Oxygen—Argon sputter-deposited gate Oxide films

This paper presents a detailed look at the electrical characteristics of MOSFET's utilizing oxygen-argon sputter-deposited gate-oxide films for low-temperature MOSFET fabrication. The gate-oxide films are deposited at low temperature (200°C) by oxygen-argon sputtering of an SiO 2 target. The MOSFET's so formed are confirmed to have triode characteristics. Moreover, oxygen mixing makes it possible to considerably improve the MOSFET field-effect mobility and subthreshold slope over those of argon-only sputter-deposited film to 700 cm2/V's and 170 mV/decade. These improvements are found to be caused by the remarkable reduction in surface-state density. These results confirm the usefulness of oxygen-argon sputter-deposited gate-oxide films for MOSFET fabrication at low temperature.