Abstract
A vacuum field emission microtriode in lateral configuration utilizing nanocrystalline diamond is presented. The nanodiamond lateral triode is a completely integrated device comprising a fingerlike emitter geometry with an ∼15nm tip radius of curvature, built-in gate, and anode with gate-cathode spacing of 3μm and anode-cathode spacing of 12μm. Triode characteristics, demonstrating gate-controlled emission current modulation with an anode current of 4μA and high transconductance of 0.3μS from a single emitter-finger at low device voltages (Vg<40V and Va∼65V), are obtained. The anode-induced electron emission conforms to Fowler–Nordheim tunneling. These observations from the first diamond lateral vacuum microtriode demonstrate a robust device for integrated circuit-compatible, temperature-, and radiation-insensitive vacuum micro-nanoelectronics.
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