Charge Carrier Trapping Research Articles

Scanning Acousto-Optoelectric Spectroscopy on a Transition Metal Dichalcogenide Monolayer.

The charge carrier dynamics are investigated by surface acoustic waves (SAWs) inside a WSe2 monolayer on LiNbO3 by scanning acousto-optoelectric spectroscopy. A strong enhancement of the PL emission intensity is observed almost over the entire area of the flake. This enhancement increases with increasing amplitude of the wave and is especially strong at or in the vicinity to defects. The latter is attributed to the SAW-driven Poole-Frenkel activation of trapped charge carriers bound to trapping sites at these defects. In addition, the PL intensity exhibit clear periodic modulations at the SAW's frequencyfSAW and at 2 fSAW. These modulations are clear and unambiguous fingerprints of spatio-temporal carrier dynamics driven by the SAW. These occur on sub-nanosecond timescales which are found in good agreement with calculated exciton dissociation times. Mapping and analyzing both effects, this study shows that scanning acousto-electric spectroscopy provides a highly sensitive and local contact-free probe which uncovers distinct local features not resolved by conventional quasi-static photoluminescence techniques. The method is ideally suited to study carrier transport in 2D and other types of nanoscale materials and to reveal dynamic exciton modulation, and carrier localization and activation dynamics in the technologically important megahertz to gigahertz frequency range.

Structural and morphological studies of g-C3N4-functionalized MWCNTs nanocomposite for sunlight-responsive photocatalytic activity

Photocatalytic degradation of organic contaminants has been proven to be one of the greatest economical and efficient techniques to address environmental pollution problems. Multi-walled carbon nanotubes (MWCNTs)/g-C3N4 (GCN) nanocomposites (NCs) were synthesized by a hydrothermal process aided by ultrasound to produce active photocatalysts. The effective synthesis of GCN, MWCNTs, and MWCNTs/GCN NCs was confirmed by X-ray diffraction (XRD) patterns. The fabrication of GCN nanosheets (NSs), the nanotubular structure of MWCNTs, and a network of neuron-like structures for MWCNTs/GCN NCs were all revealed by structural and morphological characterization. The elemental mapping of NCs containing the suitable quantity of MWCNTs revealed a uniform distribution of the sample's component elements. When the optical properties of the fabricated nanomaterials were examined by employing UV–visible spectroscopy, the results revealed a blue shift (a shift of maximum absorption to the UV region), which suggests that the addition of MWCNTs increased the band-gap energy. The behaviour of e––h+ pair recombination was revealed by measuring the charge carrier movement and trapping efficiency using photoluminescence (PL) spectroscopy. Crystal violet (CV) dye was photocatalytically degraded using prepared NCs in the presence of sunlight, and the synergistic effects of GCN and MWCNTs were examined. With a degradation efficiency of 99.32 %, MWCNTs/GCN NCs demonstrated the best sunlight-irradiated photocatalytic activity for CV degradation. The degradation of CV was discovered to follow pseudo-first-order kinetics. Throughout five consecutive studies, the NCs demonstrated the highest levels of catalytic efficiency and recyclability, with 5 % reduced degrading activities. The trapping tests showed that the primary reactive species involved in the breakdown of CV were the •O2– and •OH radicals.

Interplay between strain and charge in Cu(In,Ga)Se2 flexible photovoltaics

Flexible and lightweight Cu(In,Ga)Se2 (CIGS) thin-film solar cells are promising for versatile applications, but there is limited understanding of stress-induced changes. In this study, the charge carrier generation and trapping behavior under mechanical stress was investigated using flexible CIGS thin-film solar cells with various alkali treatments. Surface current at the CIGS surface decreased by convex bending, which occurs less with the incorporation of alkali metals. The formation energy of the carrier generating defects increased in convex bending environments clarifying the degradation of the surface current. Moreover, alkali-related defects had lower formation energy than the intrinsic acceptors, mitigating current degradation in mechanical stress condition. The altered defect energy levels were attributed to the deformation of the crystal structure under bending states. This study provides insights into the mitigating of strain-induced charge degradation for enhancing the performance and robustness of flexible CIGS photovoltaic devices.

Thermally stimulated color-tunable performance of Ca3Ga4O9: Bi3+ by co-doping with alkali metal ions

Thermally stimulated color-tunable persistent luminescent materials can serve in many practical applications. Integrating color-tunable luminescence into a stable charge carrier trapping phosphor is a promising strategy but remains a challenge. In this work, by co-doping with alkali metal ions, Ca2.90Ga4O9: 5 mol% Bi3+, 5 mol% A+ (A+= Li+, Na+, K+) phosphors show noticeable thermal stimulated luminescence color-tunability. Among these samples, the phosphor co-doped with Na+ shows a dramatic color variation with temperature from cyan (513 nm) at 99 °C to yellow (602 nm) at 237 ℃. Further studies confirm that the thermally stimulated color-tunable feature of the sample is attributed to the interplay between dual traps and different emission centers. This work reports the dynamic color-tunable persistent luminescence under different temperatures in alkali metal ions co-doped gallate and provides a new perspective for the design of thermally responsive dynamic optical materials for the application of visual temperature warning or counterfeiting.

Moiré superlattices in twisted two-dimensional halide perovskites.

Moiré superlattices have emerged as a new platform for studying strongly correlated quantum phenomena, but these systems have been largely limited to van der Waals layer two-dimensional materials. Here we introduce moiré superlattices leveraging ultrathin, ligand-free halide perovskites, facilitated by ionic interactions. Square moiré superlattices with varying periodic lengths are clearly visualized through high-resolution transmission electron microscopy. Twist-angle-dependent transient photoluminescence microscopy and electrical characterizations indicate the emergence of localized bright excitons and trapped charge carriers near a twist angle of ~10°. The localized excitons are accompanied by enhanced exciton emission, attributed to an increased oscillator strength by a theoretically predicted flat band. This research showcases the promise of two-dimensional perovskites as unique room-temperature moiré materials.

Investigation of the Trapping and Detrapping Behavior by the On-State Resistance at Low Off-State Drain Bias in Schottky p-GaN Gate HEMTs

GaN power HEMTs enable the design of power electronic systems with highest efficiencies and reduced size. Despite strong advancements in device reliability, charge carrier trapping is still an important challenge. The applied methodology allows to characterize defects that cause the dynamic RDS,on in GaN power devices at product level with flexibility in duty cycle, number of pulses and mission profile. A pronounced trapping is observed for lateral GaN-on-Si HEMTs with Schottky p-GaN gate structure at low drain bias and long off-state pulses (> 100 ms). The effect is investigated by fast determination of the on-state resistance RDS,on under different trap capturing conditions: a) different drain bias b) off-state time and number of cycles c) variation of temperature. The trapping and detrapping effects are characterized and the activation energy is extracted from time constants. An elevated on-state resistance was present for up to 3 hours. The threshold voltage modification due to high drain bias does explain the significant RDS,on increase.

Optimizing charge transport and band-offset in silicon heterojunction solar cells: impact of TiO2 contact deposition temperature

Carrier selective contacts are a primary requirement for fabricating silicon heterojunction solar cells (SHSCs). TiO2 is a prominent carrier selective contact in SHSCs owing to its excellent optoelectronic features such as suitable band offset, work function, and cost-effectiveness. Herein, we fabricated simple SHSCs in an Al/TiO2/p-Si/Ti/Au device configuration. Ultrathin 3 nm TiO2 layers were deposited onto a p-type silicon substrate using the atomic layer deposition method. The deposition temperature of TiO2 layers varied from 100 °C to 250 °C. X-ray photoelectron spectroscopic studies suggest that deposition temperature highly affects the chemical states of TiO2 and reduces the formation of defective state densities at the Fermi energy. The optical band gap values of TiO2 layers are also altered from 3.13 eV to 3.27 eV when the deposition temperature increases. The work function tuning from −5.13 eV to −4.83 eV has also been observed in TiO2 layers, suggesting the variation in Fermi level tuning, which arises due to changes in carrier concentrations at higher temperatures. Several device parameters, such as ideality factor, trap density, reverse saturation current density, barrier height, etc, have been quantified to comprehend the effects of deposition temperature on photovoltaic device performance. The results suggest that the deposition temperature significantly influences the charge transport and device performance. At an optimum temperature, a significant reduction in charge carrier recombination and trap state density has been observed, which helps to improve power conversion efficiency.

(Invited) Semiconductor Quantum Dots: From Trap States to Single Photon Purity

The semiconductor quantum dots (QDs) at the single-particle level exhibit mysterious episodes of photoluminescence (PL) intermittency, often called PL blinking, represented by ON-, GRAY-, and OFF-states which occur due to the trapping of charge carriers and Auger recombination. The first part of the presentation will discuss single-particle charge carrier dynamics in various QDs by employing various time-resolved PL measurements and strategies for controlling the undesirable OFF-states.1,2 Approaches for estimating single exciton and biexciton quantum yield in QDs and nanoplatelets, along with synthetic strategies for controlling exciton purity will be presented in the second part of the presentation.3 The presentation will also cover newer strategies for enhancing PL of QDs through plasmon resonance coupling.4 The last part of the presentation will focus on the potential applications of QDs in energy5 and electron transfer processes.6-8 By following various time-resolved transient absorption spectroscopic methods, we have demonstrated that the presence of deep hole trap states in InP QDs retards the charge recombination to a sub-millisecond timescale, which is seven orders of magnitude lower than that in CdSe QDs having shallow trap states.7 The role of the size of InP QDs on indium to phosphorous stoichiometry and the trap state distribution will also be discussed.8 K. Vishnu, A. A. K. Nair, K. George Thomas, J. Phys. Chem. C, 125, 25706 (2021).M. Thomas, N. Pradhan, K. George Thomas, ACS Energy Lett., 7, 2856 (2022).K. Vishnu, A. A. K. Nair, K. George Thomas (under publication 2023).M. Thomas, C. L. Cortes, L. Paul, S. K. Gray, K. George Thomas, Phys. Chem. Chem. Phys., 24, 17250 (2022). Manoj, S. M. Somasundaran, D. Rajan, S. Thirunavukkuarasu, K. George Thomas, J. Phys. Chem. B 126, 2635 (2022).Sandeep, B. Manoj,K. George Thomas,J. Chem. Phys.,152, 044710 (2020).Thomas, K. Sandeep, S. M. Somasundaran, K. George Thomas, ACS Energy Lett. 3, 2368 (2018).Manoj, D. Rajan, K. George Thomas, J. Chem. Phys., 158, 174706 (2023).

Study of nickel doping induced optical band gap modulation in ZnO nanorods

Nickel doping into ZnO induces morphological change, causes enhancement in the defect states, and leads to better exploitation of visible photons. Nickel ions have a solubility limit of 3% in ZnO, as beyond that, the formation of NiO causes a change of nickel coordination from tetrahedral to octahedral. This changes the hybridization of VB and CB of ZnO, resulting in modulation of the band gap. Raman studies indicate an increase in defect states of ZnO, whereas the PL spectra depict a decrease in its emission due to the trapping of charge carriers by the defect states.

Harnessing Persistent Photocurrent in a 2D Semiconductor-Polymer Hybrid Structure: Electron Trapping and Fermi Level Modulation for Optoelectronic Memory.

Recently, 2D semiconductor-based optoelectronic memory has been explored to overcome the limitations of conventional von Neumann architectures by integrating optical sensing and data storage into one device. Persistent photocurrent (PPC), essential for optoelectronic memory, originates from charge carrier trapping according to the Shockley-Read-Hall (SRH) model in 2D semiconductors. The quasi-Fermi level position influences the activation of charge-trapping sites. However, the correlation between quasi-Fermi level modulations and PPC in 2D semiconductors has not been extensively studied. In this study, we demonstrate optoelectronic memory based on a 2D semiconductor-polymer hybrid structure and confirm that the underlying mechanism is charge trapping, as the SRH model explains. Under light illumination, electrons transfer from polyvinylpyrrolidone to p-type tungsten diselenide, resulting in high-level injection and majority carrier-type transitions. The quasi-Fermi level shifts upward with increasing temperature, improving PPC and enabling optoelectronic memory at 433 K. Our findings offer valuable insights into optimizing 2D semiconductor-based optoelectronic memory.

Local charge regulation via selenium vacancies engineering in dielectric cobalt diselenide with enhanced microwave absorption

The weak electromagnetic loss capability of the single semiconductor material is difficult to meet the complicated electromagnetic environment nowadays, so vacancy engineering is employed to optimize the dielectric loss capability of CoSe2. Selenium vacancies are introduced into CoSe2 by re-annealing treatment, and the test results show that the selenium vacancies concentration enlarged with annealing temperature. The formation of selenium vacancies introduces a localized state in CoSe2, which enhances the capability of CoSe2 to trap charge carriers, and the increased conductivity contributes to the enhancement of the dielectric loss capability. Density Functional Theory (DFT) calculations demonstrate that the selenium vacancies disrupt the original charge equilibrium distribution of the CoSe2, and the non-recombined positive and negative charge centers induce a strong electric dipole polarization loss. Benefiting from the optimization of CoSe2 dielectric loss by the selenium vacancies engineering, RLmin of CoSe2-600 reaches −30.73 dB and the effective absorption bandwidth reaches 4.00 GHz at 1.8 mm. This study provides a simple and effective solution to optimize the microwave absorption performance of single-component microwave absorption materials.

MXenes with ordered triatomic-layer borate polyanion terminations.

Surface terminations profoundly influence the intrinsic properties of MXenes, but existing terminations are limited to monoatomic layers or simple groups, showing disordered arrangements and inferior stability. Here we present the synthesis of MXenes with triatomic-layer borate polyanion terminations (OBO terminations) through a flux-assisted eutectic molten etching approach. During the synthesis, Lewis acidic salts act as the etching agent to obtain the MXene backbone, while borax generates BO2- species, which cap the MXene surface with an O-B-O configuration. In contrast to conventional chlorine/oxygen-terminated Nb2C with localized charge transport, OBO-terminated Nb2C features band transport described by the Drude model, exhibiting a 15-fold increase in electrical conductivity and a 10-fold improvement in charge mobility at the d.c. limit. This transition is attributed to surface ordering that effectively mitigates charge carrier backscattering and trapping. Additionally, OBO terminations provide Ti3C2 MXene with substantially enriched Li+-hosting sites and thereby a large charge-storage capacity of 420 mAh g-1. Our findings illustrate the potential of intricate termination configurations in MXenes and their applications for (opto)electronics and energy storage.

Comprehensive empirical modeling of ScAlN/AlGaN/GaN ferroelectric HEMT

This correspondence introduces a concise depiction of a high electron mobility transistor (HEMT) utilizing a model that incorporates the effect of ferroelectric (FE) polarization on the empirical expression for drain current. This is accomplished by modifying the basic Shockley equation (S.E) for MESFET. The model employed in this investigation is particularly geared towards investigating the impact of the counterclockwise hysteresis effect due to the use of dielectric ScAlN on the transfer characteristics ( Id−Vgs ), which is mainly attributed to trapping and de-trapping of charge carriers at the dielectric/semiconductor interface. Modifying the S.E. made it possible to replicate the behavior observed in experimental HEMT accurately. We reported the modified drain current empirical expressions for the ScAlN/AlGaN/GaN HEMT that considers the FE polarization. The results of this study showed good agreement between the Id−Vgs characteristics obtained from the analytical and experimental data, with a root mean square deviation (RMSD) error of 0.97% and a mean squared error error of 0.94%. This analytical drain current model, presented herein for the first time, incorporates a limited number of fitting parameters. Therefore, enhancing the computational efficiency to assess the performance of FE GaN HEMTs for usage in wide-area electronics.

A Review of Synthesis Methods, Modifications, and Mechanisms of ZnO/TiO2-Based Photocatalysts for Photodegradation of Contaminants.

The environment being surrounded by accumulated durable waste organic compounds has become a critical crisis for human societies. Generally, organic effluents of industrial plants released into the water source and air are removed by some physical and chemical processes. Utilizing photocatalysts as cost-effective, accessible, thermally/mechanically stable, nontoxic, reusable, and powerful UV-absorber compounds creates a new gateway toward the removal of dissolved, suspended, and gaseous pollutants even in trace amounts. TiO2 and ZnO are two prevalent photocatalysts in the field of removing contaminants from wastewater and air. Structural modification of the photocatalysts with metals, nonmetals, metal ions, and other semiconductors reduces the band gap energy and agglomeration and increases the affinity toward organic compounds in the composite structures to expand their usability on an industrial scale. This increases the extent of light absorbance and improves the photocatalytic efficiency. Selecting a suitable synthesis method is necessary to prepare a target photocatalyst with distinct properties such as high specific surface area, numerous surface functional groups, and an appropriate crystalline phase. In this Review, significant parameters for the synthesis and modification of TiO2- and ZnO-based photocatalysts are discussed in detail. Several proposed mechanistic routes according to photocatalytic composite structures are provided. Some electrochemical analyses using charge carrier trapping agents and delayed recombination help to plot mechanistic routes according to the direction of photoexcited species (electron-hole pairs) and design more effective photocatalytic processes in terms of cost-effective photocatalysts, saving time and increasing productivity.

Hot Carrier Trapping and It's Influence to the Carrier Diffusion in CsPbBr3 Perovskite Film Revealed by Transient Absorption Microscopy.

The defects in perovskite film can cause charge carrier trapping which shortens carrier lifetime and diffusion length. So defects passivation has become promising for the perovskite studies. However, how defects disturb the carrier transport and how the passivating affects the carrier transport in CsPbBr3 are still unclear. Here the carrier dynamics and diffusion processes of CsPbBr3 and LiBr passivated CsPbBr3 films are investigated by using transient absorption spectroscopy and transient absorption microscopy. It's found that there is a fast hot carrier trapping process with the above bandgap excitation, and the hot carrier trapping would decrease the population of cold carriers which are diffusible, then lower the carrier diffusion constant. It's proved that LiBr can passivate the defect and lower the trapping probability of hot carriers, thus improve the carrier diffusion rate. The finding demonstrates the influence of hot carrier trapping to the carrier diffusion in CsPbBr3 film.

The key role of methylenediammonium and tetrahydrotriazinium in the phase stability of FAPbI3

Formamidinium lead triiodide (FAPbI3) is the prime candidate for single-junction perovskite solar cells, despite the metastability of the phase. To improve its ambient-phase stability and produce world-record photoelectric conversion efficiencies, methylenediammonium (MDA) has been used as an additive in FAPbI3. However, the exact function and role of MDA are still uncertain. The MDA doping may exist in the perovskite lattice in either the original structure or the THTZ-H (tetrahydrotriazinium) structure. In this research, the effects of the MDA and THTZ-H doping FAPbI3 perovskite on its stability are explored by first-principles calculations. Both MDA and THTZ-H doping can improve the stability of FAPbI3 perovskite from a structural perspective due to lattice strain and stronger H–I bonds. However, the doping mechanisms differ significantly in terms of electronic properties. The MDA doping acts by the traditional passivation mechanism. It can eliminate the iodine interstitial defect states that trap charge carriers and inhibit iodine interstitial defect migration. The THTZ-H cation can directly contribute to the band edge construction in the FAPbI3 bulk. Electron delocalization in the π-conjugated ring structure lowered the frontier orbital separation of the THTZ-H organic molecule and enabled orbital overlap with the inorganic moiety. The in-depth understanding of the mechanism of improving stability in this study would facilitate the application of FAPbI3 perovskite optoelectronic devices.

Synthesis of 2D yttrium zinc oxide nanosheets via simple chemical route toward high performance Schottky diode based on large charge carriers density and photoresponsivity

Yttrium zinc oxide (Zn0.85Y0.15O) nanostructures were stoichiometrically prepared by co-precipitation method. XRD, EDX, XPS, SEM, and TEM spectroscopy were examined to investigate structure, composition, and morphological characteristics. The synthesized nanocomposite exhibited polycrystalline structure with small crystallite size ∼ 27 nm in which the particles appeared in sheets like shape with high atomic density on surface. The optical parameters including energy gap (Eg) and refractive index (n) were investigated from (T%) and (R%) measurements through wavelength range from 300–900 nm. Al/Y:ZnO/p-Si/Ag Schottky diode was fabricated using thermal evaporating technique and its current–voltage (I–V) was analyzed using different models. The photodiode showed non-ideal behavior with ideality factor greater than unity and small potential barrier. Under various illuminations, the photodiode has revealed high photosensitivity attributed to trapped charge carriers at the interface. The charge carrier density Nd and built-in voltage Vbi were estimated from Mott Schottky (M–S) function suggesting high Schottky diode efficiency.

Indirect evidence of Bi3+ valence change and dual role of Bi3+ in trapping electrons and holes for multimode X-ray imaging, anti-counterfeiting, and non-real-time force sensing

Discovering bismuth based smart materials that can respond to thermal, mechanical, and wide range X-ray to infrared photon excitation remains a challenge. Such materials have various uses like in advanced information encryption. In this work, valence state change between Bi2+, Bi3+, and Bi4+, and the dual role of Bi3+ in trapping electrons and holes have been studied in Bi3+ or/and Ln3+ (Ln=Tb or Pr) doped LiScGeO4 family of compounds by vacuum referred binding energy (VRBE) diagram construction, thermoluminescence, and spectroscopy. Electron release from Bi2+ has been evidenced. It can be used to experimentally determine the VRBE in the Bi2+ 2P1/2 ground state and to realize Bi3+ negative quenching luminescence. Particularly, a new force induced charge carrier storage phenomenon has been discovered for non-real-time force recording. Wide range of emission tailorable afterglow, unique Bi3+ ultraviolet-A, white, and infrared afterglow have been demonstrated by using Bi3+ as a hole trapping and recombination center and using energy transfer processes from Bi3+ to Tb3+, Pr3+, Dy3+, or Cr3+. Proof-of-concept advanced anti-counterfeiting, information encryption, and X-ray imaging will be demonstrated. This work not only develops smart storage phosphors, but more importantly unravels the valence change between Bi2+, Bi3+, or Bi4+ and how it can affect the trapping and release of charge carriers with thermal, optical, or mechanical excitation. This work therefore can promote the discovery and development of Bi3+ based smart materials for various applications.

Electric-Tree Resistant Performance and Thermal Charge-Carrier Dissipation Mechanism of Voltage Stabilizer-Modified EPDM

In order to improve electric-tree resistant performance and dielectric breakdown strength of ethylene-propylene-diene misch-polymere (EPDM) material used for cable accessory reinforce insulation, the two specific aromatic ketone compounds—vinylphenylacetone (VPE) and 4-propylene oxyxy-2-hydroxydibenzenone (AOHBP) are employed as two paradigms of voltage stabilizer for chemical-graft modifications. Electric-tree resistances and insulation performances of modified EPDM materials and their charge trapping mechanism of thermoelectron inhibitions are studied by the accelerated electric-tree aging experiments, alternating current (AC) dielectric breakdown tests, surface potential trap-level analyses and first-principles calculations. Both the two species of voltage stabilizers are effective for promoting electric-tree inception voltage and dielectric breakdown strength, leading to a high extension of electric-tree morphology and smaller dimension of electric-trees growth, in which AOHBP is more significant. The two species of voltage stabilizers have been successfully grafted onto EPDM molecular-chains in thermal-chemistry crosslinking reactions of EPDM, introducing multiple shallow levels of charge traps, which reduces the energy released by trapping charge carriers and thus alleviates electric-tree aging of EPDM. The AOHBP and VPE represent a high electron affinity and a small electronic energy gap, which is competent of assimilating the kinetic energies of hot charge carriers whilst restricting Auger electronic excitation. Especially, the benzene group in voltage stabilizer renders shallow level charge traps with a larger carrier capture cross-section than deep traps and simultaneously possesses the high atomic vibration frequencies similar as electronic-transition energies, which results in effective dissipation on the kinetic energies of hot charge carriers. This mechanism dominates to increase electric-tree resistance and insulation strength of EPDM. The present study proves the important role of voltage stabilizers in improving insulation performance of EPDM material, and reveals the refrigeration mechanism on hot charge carriers for restricting electric-tree growth, which provides a significant strategy of chemical modifications for developing high-insulation cable accessory materials.

Emission behaviour of CdTe/SiO2 core/shell quantum dots in external electric field

Optical properties of CdTe/SiO2 core/shell colloidal quantum dots were investigated in external electric field in the range of 0–140 kV/cm. Maximum of photoluminescence intensity was centered at 2.39 eV with the full width at half maximum of 0.26 eV. It was found that the photoluminescence intensity of quantum dots tends to decrease by 22% and the integrated luminescence intensity tends to decrease by 23% with increasing electric field to the maximum value. However, an increase in the integrated luminescence intensity in the region of 60 kV/cm was observed. We show that both interband and trap-state luminescence is affected by an external electric field with no Stark shift observed. Based on these results, we propose that relaxation of the excited states in CdTe/SiO2 core/shell colloidal quantum dots exposed to an external electric field is affected by two field-dependent mechanisms, i.e. field-induced quenching of luminescence and blocking of charge carrier trapping. The obtained results can be useful to gain better understanding of the electric field effect on the optical properties of CdTe/SiO2 colloidal semiconductor quantum dots and, in particular, on the operation of hybrid organic-inorganic LEDs with emitting layers based on the studied nanocrystals.