Abstract
The weak electromagnetic loss capability of the single semiconductor material is difficult to meet the complicated electromagnetic environment nowadays, so vacancy engineering is employed to optimize the dielectric loss capability of CoSe2. Selenium vacancies are introduced into CoSe2 by re-annealing treatment, and the test results show that the selenium vacancies concentration enlarged with annealing temperature. The formation of selenium vacancies introduces a localized state in CoSe2, which enhances the capability of CoSe2 to trap charge carriers, and the increased conductivity contributes to the enhancement of the dielectric loss capability. Density Functional Theory (DFT) calculations demonstrate that the selenium vacancies disrupt the original charge equilibrium distribution of the CoSe2, and the non-recombined positive and negative charge centers induce a strong electric dipole polarization loss. Benefiting from the optimization of CoSe2 dielectric loss by the selenium vacancies engineering, RLmin of CoSe2-600 reaches −30.73 dB and the effective absorption bandwidth reaches 4.00 GHz at 1.8 mm. This study provides a simple and effective solution to optimize the microwave absorption performance of single-component microwave absorption materials.
Published Version
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