Total Current Spectra Research Articles

Formation of defects on the surface of LiF crystals under irradiation with different ions mass

In this work, we consider the experimental and theoretical results of studies of the formation of defects on the surface of LiF crystals under irradiation with ions using total current spectroscopy and the SRIM software package. A comparative study was carried out with ions of different masses, and inconsistencies of the occurring physical phenomena between our early concepts were found. It is shown that in the case of heavy ions irradiation, they are implanted and appear substitutional atoms into the bulk of the crystal. For ions with the smallest ion mass, the distribution of interstitial defects is greater on the surface than in the bulk of the crystal. An attempt is made to explain the formation of some defects on the surface (formed peaks in the total current spectra) by the method of computer simulation. Highlights Formation of defects on the surface of LiF films at ions irradiation. Influence of irradiation ions mass on the formation of surface defects. The different distribution of substitutional atoms on the surface. Formation of vacancies and interstitial defects on the surface of LiF films at ions irradiation.

Coelomic fluid of Echinometra mathaei: The new prospects for medicinal antioxidants

Echinoid pigments have various biological properties such as antioxidant, cytotoxic, and antibacterial activities. We aimed to evaluate the extraction of cell-free coelomic fluid (CFCF) and coelomocyte lysate (CL) as well as qualitatively and quantitatively identify the coelomic fluid of Echinometra mathaei as a new source of polyhydroxylatednaphthoquinone (PHNQ) antioxidant pigments. Based on the High Performance liquid chromatography–electrospray mass spectrometry (HPLC-MS) analysis in negative mode, the main quinonoid (PHNQ) pigments were identified and quantified. This study also illustrated the total ion current chromatograms and related mass spectra of Spinochrome A, Spinochrome B, Spinochrome C, and Echinochrome A in CL and SpinochromeC in CFCF samples. The ions at 221, 279, 265 and 263 m/z correspond to the pseudo-molecular [M − H] ions of Spinochrome B, Spinochrome C, Echinochrome A, and Spinochrome A, respectively. These components have previously been noted from the shells and spines of sea urchins but identification of PHNQs pigments in CL and CFCF of E. mathaei using LC-MS was introduced for the first time. The results also showed that, the highest DPPH radical scavenging activity of CFCF (88.12 DPPH% scavenging at 70 μg/mL, IC50 = <10 μg/mL). The findings clearly suggest that the coelomic fluid of E. mathaei could be served as the promising as well as potential natural antioxidants in the medical and pharmaceutical industries and could replace the increasing prices of the commercial antioxidants products.

Unoccupied Electronic States and Potential Barrier in Films of Substituted Diphenylphthalides on the Surface of Highly Ordered Pyrolytic Graphite

The results of a study of the unoccupied electronic states of ultrathin films of bis-carboxyphenyl-phthalide (DCA-DPP) and bis-methylphenyl-phthalide (DM-DPP) up to 8 nm thick are presented. The studies are carried out by total current spectroscopy (TCS) in the energy range from 5 to 20 eV above EF during thermal vacuum deposition of these organic films on the surface of highly ordered pyrolytic graphite (HOPG). The values of Evac relative to EF, i.e., the work function of electrons of the DM-DPP films at a film thickness of 5–8 nm are found to be 4.3 ± 0.1 eV. The values of the work function of electrons of the DCA‑DPP films are found to be 3.7 ± 0.1 eV. The structure of the maxima of unoccupied electronic states of DCA-DPP and DM-DPP films in the studied energy range is established. A comparison of the obtained properties of DCA-DPP and DM-DPP films with the properties of films of molecules of unsubstituted diphenylphthalide (DPP) is presented. Thus, the –CH3 substitution of the DPP molecule has almost no effect on the height of the potential barrier between the film and the HOPG surface, while –COOH substitution of the DPP molecule leads to an increase in the height of the potential barrier between the film and the HOPG substrate surface by 0.5–0.6 eV. Substitution of DPP molecules with –COOH functional groups and, thus, the formation of DCA-DPP molecules lead to a shift of two maxima of the fine structure of the total current spectra located at energies in the range from 5 to 8 eV above EF by about 1 eV towards the lower electron energies.

Незаполненные электронные состояния ультратонких пленок кватерфенила на поверхностях послойно сформированного CdS и окисленного кремния

The results of a study of unoccupied electronic states and the formation of a boundary potential barrier during thermal vacuum deposition of ultrathin films of 4-quaterphenyl oligophenylene on the surface of CdS and on the surface of oxidized silicon are presented. Using X-ray photoelectron spectroscopy (XPS) it was determined, that the atomic concentrations of Cd and S were equal in the surface layer of a 75-nm-thick CdS film formed by atomic layer deposition (ALD). The electronic properties of 4-quaterphenyl films up to 8 nm thick were studied during their deposition on the surface of the CdS layer and on the surface of oxidized silicon using total current spectroscopy (TCS) in the energy range from 5 eV to 20 eV above EF. The energetic position of the main maxima of the fine structure of the total current spectra (FSTCS) of 4-quaterphenyl films was determined. The location of the maxima was reproducible when two selected substrate materials were used. A minor decrease in the work function, from 4.2 eV to 4.1 eV, was registered during the thermal deposition of 4-quaterphenyl onto the CdS surface. During the deposition of a 4-quaterphenyl film on the oxidized silicon surface, an increase in the work function from 4.2 eV to 4.5 eV was found. Possible mechanisms of the physicochemical interaction between the 4-quaterphenyl film and the surface of the investigated substrates, which lead to a difference in the observed values of the work function of the films on these substrates, are discussed.

Незаполненные электронные состояния и потенциальный барьер в пленках замещенных дифенилфталидов на поверхности высокоупорядоченного пиролитического графита

The results of a study of the unoccupied electronic states of ultrathin films of bis-carboxyphenyl-phthalide (DCA-DPP) and bis-methylphenyl-phthalide (DM-DPP) up to 8 nm thick are presented. The studies were carried out by total current spectroscopy (TCS) technique in the energy range from 5 eV to 20 eV above EF during thermal vacuum deposition of these organic films on the surface of highly oriented pyrolytic graphite (HOPG). The energy Evac relative to EF, that is, the electronic work function of the DM-DPP films, at a film thickness of 5–8 nm was 4.3 ± 0.1 eV. The electronic work function of the DCA-DPP films was 3.7 ± 0.1 eV. The structure of the maxima of the unoccupied electronic states of DCA-DPP films and DM-DPP films in the studied energy range is determined. The properties determined of DCA-DPP and DM-DPP films are compared with the properties of films of unsubstituted diphenylphthalide (DPP). According to our analysis, –CH3 substitution of the DPP molecule practically did not affect the height of the potential barrier between the film and the HOPG surface, and –COOH substitution of the DPP molecule led to an increase in the height of the potential barrier between the film and the HOPG substrate surface by 0.5–0.6 eV. Substitution of DPP molecules with –COOH functional groups which represents formation of DCA-DPP molecules led to a shift of two peaks of the experimental total current spectra located at energies in the range from 5 eV to 8 eV above EF, by about 1 eV towards lower electron energies.

Discovering Biomarkers in Peritoneal Metastasis of Gastric Cancer by Metabolomics.

Background and ObjectiveMetabolomics has recently been applied in the field of oncology. In this study, we aimed to use metabolomics to explore biomarkers in peritoneal metastasis of gastric cancer.MethodsPeritoneal lavage fluid (PLF) of 65 gastric cancer patients and related clinical data were collected from the First Hospital of Jilin University. The metabolic components were identified by liquid chromatography-mass spectrometry (LC-MS). Total ion current (TIC) spectra, principal component analysis (PCA), and the Student's t-test were used to identify differential metabolites in PLF. A support vector machine (SVM) was used to screen the differential metabolites in PLF with a weight of 100%. Cluster analysis was used to evaluate the similarity between samples. Receiver operating characteristic (ROC) curve analysis was used to assess the diagnostic ability of the metabolites. Univariate and multivariate logistic regression analyses were used to identify potential risk factors for peritoneal metastasis of gastric cancer.ResultsWe found the differential levels of PLF metabolites by LC-MS, TIC spectra, PCA and the t-test. Cluster analysis showed the co-occurrence of metabolites in the peritoneal metastasis group (p<0.05). ROC analysis showed the diagnostic ability of metabolites (p<0.05). Univariate and multivariate logistic regression analyses showed the potential independent risk factors for peritoneal metastasis in gastric cancer patients (p<0.05).ConclusionThrough the statistical analysis of metabolomics, we found that TG (54:2), G3P, α-aminobutyric acid, α-CEHC, dodecanol, glutamyl alanine, 3-methylalanine, sulfite, CL (63:4), PE-NMe (40:5), TG (53:4), retinol, 3-hydroxysterol, tetradecanoic acid, MG (21:0/0:0/0:0), tridecanoic acid, myristate glycine and octacosanoic acid may be biomarkers for peritoneal metastasis of gastric cancer.

Плотность свободных электронных состояний полупроводниковых пленок молекул нафталина и дифенилфталида, модифицированных электроактивными функциональными группами

The results on comparing the peak structure of the density of unoccupied electronic states (DOUS) of ultrathin films of naphthalene anhydride-1,4,5,8-teracabonic acid (NTCDA) and naphthalene-1,8-dicarboxylic acid anhydride (NDCA) and of two types of phthalide-based films: 3,3-bis (phenyl) phthalide (DPP) and 3,3-bis (phenyl) phthalide-4 ′, 4′-dicarboxylic acid (DPP-DCA) are presented. The measurements of the structure of the unoccupied electronic states in the energy range from 5 eV to 20 eV above the Fermi level of the films studied having thickness of 8–10 nm were conducted using the total current spectroscopy (TCS) technique. Analysis of the experimental results was conducted using the model total current spectra and DOUS dependences generated using the calculated orbital energies of the studied molecules by means of the density functional theory (DFT) method at the B3LYP/6-31G(d) level. The difference in the DOUS spectra of NTCDA and NDCA films is characterized by the shift of the main DOUS maxima of the NTCDA film to lower energies by about 1 eV at energies less than 12.5 eV, and at higher energies the DOUS maxima are shifted by 1.5-2 eV. The energy positions of the maxima of the total current spectra of the DPP-DCA and DPP films practically do not change when using various substrates: highly ordered pyrolytic graphite (HOPG) and layer-by-layer deposited CdS. The relative intensities of the maxima differ when using different substrates. The characteristic shift of the maxima of the total current spectra of DPP-DCA films is about 1 eV at energies less than 12.5 eV above the Fermi level and 1.5-2 eV and at higher energies, compared with the position of the corresponding maxima of the DPP films.

Незаполненные электронные состояния ультратонких пленок тиофен-фенилен со-олигомеров на поверхности поликристаллического золота

The results of studying unoccupied electronic states in the energy range from 5 eV to 20 eV above the Fermi level of ultrathin films of dimethyl-substituted thiophene-phenylene co-oligomers CH3-phenylene-thiophene-thiophene-phenylene-CH3 (CH3-PTTP-CH3) are presented. The films were deposited on two types of surface of polycrystalline Au: ex situ Au layer thermally deposited in a separate chamber, and on the in situ Au surface prepared inside the analytical chamber. The structure of the films was studied by X-ray diffraction (XRD). The formation of a superposition of the amorphous and crystalline phases with a period of 3.8 nm is discussed. Investigations of the energy positioning of the maxima of unoccupied electronic states and of the process of the formation of the potential boundary barrier were carried out by the method of total current spectroscopy (TCS). The maxima of the fine structure of the total current spectra (FSTCS) of the CH3-PTTP-CH3 film 5–7 nm thick did not differ when using different types of Au substrates and the surface of the ZnO semiconductor prepared by the atomic layer deposition (ALD) method. When the CH3-PTTP-CH3 layer was deposited both on the ex situ Au surface and on the in situ Au surface, a slight (about 0.1 eV) increase in the electronic work function was observed with an increase in the coating thickness to 5–7 nm. At such CH3-PTTP-CH3 film thicknesses, the electron work function was determined as 4.7 ± 0.1 eV for the ex situ Au substrate and 4.9 ± 0.1 eV for the in situ Au substrate. The possible influence of the processes of physicochemical interaction at the film – substrate interface on the formation of the potential boundary barrier in the structures under study is discussed.

The Unoccupied Electronic States of the Ultrathin Diphenylphthalide Films on the Surface of the Highly Oriented Pyrolytic Graphite

The results of diagnostics of the atomic composition of a diphenylphthalide (DPP) film thermally precipitated in vacuum by the of X-ray photoelectric spectroscopy (XPS) method are presented. The results of examination of the unoccupied electronic states of the ultrathin DPP films with the thickness up to 10 nm on the surface of the highly oriented pyrolytic graphite (HOPG) by the total current spectroscopy (TCS) method in the energy range from 5 to 20 eV above EF are presented. In this range, the main maxima in the total current spectra are identified. The analysis of the TCS results with consideration of the theoretical calculation results has shown that the low-energy maxima observed at the energies from 6 to 7.5 eV are induced predominately by π* electron orbitals of DPP films. The values of the energy Evac in relation to EF, i.e., of the electron work function in the DPP films at the film thickness of 5–10 nm, are found experimentally at a level of 4.3 ± 0.1 eV. The negative charge transfer from an organic film to the substrate corresponds to the formation of the HOPG/DPP boundary potential barrier during the thermal deposition of the DPP film.

Excitation spectra in fluids: How to analyze them properly

Although the understanding of excitation spectra in fluids is of great importance, it is still unclear how different methods of spectral analysis agree with each other and which of them is suitable in a wide range of parameters. Here, we show that the problem can be solved using a two-oscillator model to analyze total velocity current spectra, while other considered methods, including analysis of the spectral maxima and single mode analysis, yield rough results and become unsuitable at high temperatures and wavenumbers. To prove this, we perform molecular dynamics (MD) simulations and calculate excitation spectra in Lennard-Jones and inverse-power-law fluids at different temperatures, both in 3D and 2D cases. Then, we analyze relations between thermodynamic and dynamic features of fluids at (Frenkel) crossover from a liquid- to gas-like state and find that they agree with each other in the 3D case and strongly disagree in 2D systems due to enhanced anharmonicity effects. The results provide a significant advance in methods for detail analysis of collective fluid dynamics spanning fields from soft condensed matter to strongly coupled plasmas.

Незаполненные электронные состояния ультратонких пленок дифенилфталида на поверхности высокоупорядоченного пиролитического графита

AbstractThe results of diagnostics of the atomic composition of a diphenylphthalide (DPP) film thermally precipitated in vacuum by the of X-ray photoelectric spectroscopy (XPS) method are presented. The results of examination of the unoccupied electronic states of the ultrathin DPP films with the thickness up to 10 nm on the surface of the highly oriented pyrolytic graphite (HOPG) by the total current spectroscopy (TCS) method in the energy range from 5 to 20 eV above E _F are presented. In this range, the main maxima in the total current spectra are identified. The analysis of the TCS results with consideration of the theoretical calculation results has shown that the low-energy maxima observed at the energies from 6 to 7.5 eV are induced predominately by π* electron orbitals of DPP films. The values of the energy E _vac in relation to E _F, i.e., of the electron work function in the DPP films at the film thickness of 5–10 nm, are found experimentally at a level of 4.3 ± 0.1 eV. The negative charge transfer from an organic film to the substrate corresponds to the formation of the HOPG/DPP boundary potential barrier during the thermal deposition of the DPP film.

Analysis of iodinated quorum sensing peptides by LC–UV/ESI ion trap mass spectrometry

Five different quorum sensing peptides (QSP) were iodinated using different iodination techniques. These iodinated peptides were analyzed using a C18 reversed phase HPLC system, applying a linear gradient of water and acetonitrile containing 0.1% (m/v) formic acid as mobile phase. Electrospray ionization (ESI) ion trap mass spectrometry was used for the identification of the modified peptides, while semi-quantification was performed using total ion current (TIC) spectra. Non-iodinated peptides and mono- and di-iodinated peptides (NIP, MIP and DIP respectively) were well separated and eluted in that order. Depending on the used iodination method, iodination yields varied from low (2%) to high (57%).

Identification of Smallanthus sonchifolius in herbal tea mixtures by PCR and DART/TOF-MS methods

The identification of yacon, a medicinal plant, in tea mixtures by rapid Polymerase Chain Reaction (PCR) and the Direct Analysis in Real Time coupled with Time-of-Flight Mass Spectrometry (DART/TOF-MS) method were evaluated. Three tea products and a pure yacon tea were analysed using the molecular method PCR, concretely the intraspecific variation of the internal transcribed spacer (ITS) regions of rDNA and the DART method coupled with TOF-MS. The results show the reliability of PCR and restriction cleavage of the ITS as a combined approach to confirm the presence of yacon in herbal tea mixtures. Three fragments of approximately 700, 408, and 235 bp in length are present when yacon is a part of the herbal tea mixture. The Principal Component Analysis (PCA) based on the fingerprints of the complete Total Ion Current (TIC) mass spectra shows sufficient separation of herbal teas with and without yacon leaves. The reported methods are technically rapid and can be used as an effective tool for the purposes of yacon identification or authentication.

Electronic structure of the conduction band of the interface region of ultrathin films of substituted perylenedicarboximides and the germanium oxide surface

The results of the investigation of the electronic structure of the conduction band and the interfacial potential barrier during the formation of interfaces of dioctyl-substituted perylenedicarboximide (PTCDI-C8) and diphenyl-substituted perylenedicarboximide (PTCDI-Ph) ultrathin films with the oxidized germanium surface have been presented. The experimental results have been obtained using the very low energy electron diffraction (VLEED) technique in the total current spectroscopy (TCS) mode at energies in the range from 5 to 20 eV above the Fermi level EF. The positions of the maxima of the fine structure of total current spectra (FSTCS) of the PTCDI-C8 and PTCDI-Ph films differ significantly in the energy range from 9 to 20 eV above the Fermi level EF, which can be associated with the difference between the substituents of the chosen molecules, dioctyl- and diphenyl-, respectively. At the same time, the positions of the lowenergy maxima in the FSTCS spectra at an energy 6–7 eV above the Fermi level EF for the PTCDI-C8 and PTCDI-Ph films almost coincide with each other. It has been suggested that these maxima are attributed to the electronic states of the perylene core of the molecules under investigation. The process of the formation of interfacial potential barriers of the PTCDI-C8 and PTCDI-Ph films with the oxidized germanium surface has been analyzed. It has been found that the work functions of the surface, Evac–EF, differ little from 4.6 ± 0.1 eV over the entire range of organic coating thicknesses from 0 to 6 nm.

Electronic structure of the conduction band upon the formation of ultrathin fullerene films on the germanium oxide surface

The results of the investigation of the electronic structure of the conduction band in the energy range 5–25 eV above the Fermi level EF and the interfacial potential barrier upon deposition of aziridinylphenylpyrrolofullerene (APP-C60) and fullerene (C60) films on the surface of the real germanium oxide ((GeO2)Ge) have been presented. The content of the oxide on the (GeO2)Ge surface has been determined using X-ray photoelectron spectroscopy. The electronic properties have been measured using the very low energy electron diffraction (VLEED) technique in the total current spectroscopy (TCS) mode. The regularities of the change in the fine structure of total current spectra (FSTCS) with an increase in the thickness of the APP-C60 and C60 coatings to 7 nm have been investigated. A comparison of the structures of the FSTCS maxima for the C60 and APP-C60 films has made it possible to reveal the energy range (6–10 eV above the Fermi level EF) in which the energy states are determined by both the π* and σ* states and the FSTCS spectra have different structures of the maxima for the APP-C60 and unsubstituted C60 films. The formation of the interfacial potential barrier upon deposition of APP-C60 and C60 on the (GeO2)Ge surface is accompanied by an increase in the work function of the surface Evac–EF by the value of 0.2–0.3 eV, which corresponds to the transfer of the electron density from the substrate to the organic films under investigation. The largest changes occur with an increase in the coating thickness to 3 nm, and with further deposition of APP-C60 and C60, the work function of the surface changes only slightly.

Structure of vacant electronic states of an oxidized germanium surface upon deposition of perylene tetracarboxylic dianhydride films

This paper presents the results of the investigation of the interface potential barrier and vacant electronic states in the energy range of 5 to 20 eV above the Fermi level (EF) in the deposition of perylene tetracarboxylic dianhydride (PTCDA) films on the oxidized germanium surface ((GeO2)Ge). The concentration of oxide on the (GeO2)Ge surface was determined by X-ray photoelectron spectroscopy. In the experiments, we used the recording of the reflection of a test low-energy electron beam from the surface, implemented in the mode of total current spectroscopy. The theoretical analysis involves the calculation of the energy and spatial distribution of the orbitals of PTCDA molecules by the density functional theory (DFT) using B3LYP functional with the basis 6-31G(d), followed by the scaling of the calculated values of the orbital energy according to the procedure well-proven in the studies of small organic conjugated molecules. The pattern of changes in the fine structure of the total current spectra with increasing thickness of the PTCDA coating on the (GeO2)Ge surface to 6 nm was studied. At energies below 9 eV above EF, there is a maximum of the density of unoccupied electron states in the PTCDA film, formed mainly by π* molecular orbitals. The higher density maxima of unoccupied states are of σ* nature. The formation of the interface potential barrier in the deposition of PTCDA at the (GeO2)Ge surface is accompanied by an increase in the work function of the surface, Evac–EF, from 4.6 ± 0.1 to 4.9 ± 0.1 eV. This occurs when the PTCDA coating thickness increases to 3 nm, and upon further deposition of PTCDA, the work function of the surface does not change, which corresponds to the model of formation of a limited polarization layer in the deposited organic film.

Use of the tools of formal chemical kinetics for calculating emission spectra in decay of radioactive isotopes

The use of the tools of formal chemical kinetics for calculating the total α-, β-, and γ-ray spectra in decay of radioactive isotopes is suggested. Principles of constructing a reaction scheme modeling the radioactive decay of the initial isotope and chain of its daughter nuclides are described. The reaction scheme allows calculation of the total current radiation spectra, total decay energy, and gas (He) formation along with variation of the isotope composition.

Transmission of low-energy electrons through ultrathin layers of tin(IV) phthalocyanine oxide

The results of the investigation of the transmission of low-energy electrons through 8-nm-thick films of tin(IV) phthalocyanine oxide (SnOPc) on the surface of the oxidized silicon substrate are presented. The procedure of detecting the reflection of testing low-energy electron beam from the surface was implemented using the very low-energy electron diffraction (VLEED) technique in the total current spectroscopy (TCS) mode with a change in the incident electron beam energy from 0 to 25 eV. The structure of maxima in the total current spectra of SnOPc films was established and the variation in intensities of the maxima of total current spectra emitted from the deposited SnOPc film and (SiO2)n-Si substrate during an increase in the thickness of the organic coating to 8 nm was analyzed. With such an increase in the thickness of the organic coating, the work function of the surface increases by 0.7 eV, which corresponds to the transfer of the electron density from the (SiO2)n-Si substrate to the SnOPc film. Optical absorption spectra of SnOPc films were measured. The absorption spectra were compared with the spectra measured by the TCS method for the SnOPc films and the films of molecules of oxygen-free metal phthalocyanine.

Erratum to: “Electronic properties of ultrathin films based on pyrrolofullerene molecules on the surface of oxidized silicon”

Results of the investigation into the interface formation during the deposition of the films based on aziridinylphenylpyrrolofullerene (APP-C60) up to 8 nm thick on the surface of the oxidized silicon substrate are presented. The procedure of detecting reflection of testing low-energy electron beam from the surface implemented in the total current spectroscopy mode with a change in the incident electron energy from 0 to 25 eV is used. The structure of maxima in the total current spectra induced by the APP-C60 deposited film is established, and the character of interrelation of these maxima with π* and σ* energy bands in the studied materials is determined. It is revealed due to analyzing the variation in intensities of the total current spectra of the deposited APP-C60 film and the (SiO2)n-Si substrate that the APP-C60 film is formed at the early deposition stage with the coating thickness thinner than one monolayer without the formation of the intermediate modified organic layer. As the APP-C60/(SiO2)n-Si interface is formed, the work function of the surface increases by 0.7 eV, which corresponds to the transfer of the electron density from substrate (SiO2)n-Si toward the film APP-C60. The optical absorption spectra of the APP-C60 films are measured and compared with the spectra of films of unsubstituted C60.

Electronic properties of the interface between hexadecafluoro copper phthalocyanine and unsubstituted copper phthalocyanine films

The formation of an interface during the deposition of unsubstituted copper phthalocyanine (CuPc) films on the surface of hexadecafluoro copper phthalocyanine (F16-CuPc) films is studied. An incident low-energy electron beam with energies from 0 to 25 eV is used to test the surface under study according to the very-low-energy electron-diffraction technique (VLEED) in the mode of total current spectroscopy. For F16-CuPc films, the structure of the maxima in the total current spectra and its main differences from the structure of the maxima for the CuPc film are determined in the energy range from 5 to 15 eV above the Fermi level. The differences in the structure of vacant electron orbitals for CuPc and F16-CuPc are also revealed using density functional theory calculations. As a result of an analysis of variations in the intensities of the total current spectra of the CuPc and F16-CuPc films, it is assumed that an intermediate layer up to 1 nm thick appears during the formation of an interface between these films, which is characterized by a spread of the features in the total current spectrum. The height, width, and change in the work function are determined for the studied F16-CuPc/NuPc interface barrier. A decrease in the level of vacuum by 0.7 eV occurs in the boundary region, which corresponds to electron density transfer from the CuPc film toward the F16-CuPc substrate.