Topological Spintronic Devices Research Articles

Thermal Stability of Skyrmion Tubes in Nanostructured Cuboids.

Magnetic skyrmions in bulk materials are typically regarded as two-dimensional structures. However, they also exhibit three-dimensional configurations, known as skyrmion tubes, that elongate and extend in-depth. Understanding the configurations and stabilization mechanism of skyrmion tubes is crucial for the development of advanced spintronic devices. However, the generation and annihilation of skyrmion tubes in confined geometries are still rarely reported. Here, we present direct imaging of skyrmion tubes in nanostructured cuboids of a chiral magnet FeGe using Lorentz transmission electron microscopy (TEM), while applying an in-plane magnetic field. It is observed that skyrmion tubes stabilize in a narrow field-temperature region near the Curie temperature (Tc). Through a field cooling process, metastable skyrmion tubes can exist in a larger region of the field-temperature diagram. Combining these experimental findings with micromagnetic simulations, we attribute these phenomena to energy differences and thermal fluctuations. Our results could promote topological spintronic devices based on skyrmion tubes.

Skyrmion-Bubble Bundles in an X-Type Sr2 Co2 Fe28 O46 Hexaferrite above Room Temperature.

Magnetic skyrmions are spin swirls that possess topological nontriviality and are considered particle-like entities. They are distinguished by an integer topological charge Q. The presence of skyrmion bundles provides an opportunity to explore the range of values for Q, which is crucial for the advancement of topological spintronic devices with multi-Q properties. In this study, a new material candidate, Sr2 Co2 Fe28 O46 hexaferrite of the X-type, which hosts small dipolar skyrmions at room temperature and above is presented. By exploiting reversed magnetic fields from metastable skyrmion bubbles at zero fields,skyrmion-bubble bundles with different interior skyrmion/bubble numbers, topological charges, and morphologies at room temperature are incorporated. These experimental findings are consistently supported by micromagnetic simulations. These results highlight the versatility of topological spin textures in centrosymmetric uniaxial magnets, thereby paving the way for the development of room-temperature topological spintronic devices with multi-Q characteristics.

Current‐Controlled Skyrmion Number in Confined Ferromagnetic Nanostripes

AbstractSkyrmions are vortex‐like localized magnetic structures that possess an integer‐valued topological index known as the skyrmion number or topological charge. Skyrmion number determines the topology‐related emergent magnetism, which is highly desirable for advanced storage and computing devices. In order to achieve device functions, it is necessary to manipulate the skyrmion number in confined nanostructured geometries using electrical methods. Here, the reliable current‐controlled operations for manipulating the skyrmion number through reversible topological transformations between skyrmion chains and stripe domains in confined Fe3Sn2 nanostripes are reported. The results of micromagnetic simulations are successful in numerically reproducing the experiments and explaining them through the combined effect of current‐induced Joule heating and magnetic hysteresis. These findings hold the potential to advance the development of topological spintronic devices.

Extracting unconventional spin texture in two dimensional topological crystalline insulator bismuthene via tuning bulk-edge interactions

Tuning the interaction between the bulk and edge states of topological materials is a powerful tool for manipulating edge transport behavior, opening up exciting opportunities for novel electronic and spintronic applications. This approach is particularly suited to topological crystalline insulators (TCI), a class of topologically nontrivial compounds that are endowed with multiple degrees of topological protection. In this study, we investigate how bulk-edge interactions can influence the edge transport in planar bismuthene, a TCI with metallic edge states protected by in-plane mirror symmetry, using first principles calculations and symmetrized Wannier tight-binding models. By exploring the impact of various perturbation effects, such as device size, substrate potentials, and applied transverse electric field, we examine the evolution of the electronic structure and edge transport in planar bismuthene. Our findings demonstrate that the TCI states of planar bismuthene can be engineered to exhibit either a gapped or conducting unconventional helical spin texture via a combination of substrate and electric field effects. Furthermore, under strong electric fields, the edge states can be stabilized through a delicate control of the bulk-edge interactions. These results open up new directions for discovering novel spin transport patterns in topological materials and provide critical insights for the fabrication of topological spintronic devices.

Sizable spin-to-charge conversion in PLD-grown amorphous (Mo, W)Te2−x films

We report on the spin-to-charge conversion (SCC) in Mo0.25W0.75Te2−x (MWT)/Y3Fe5O12 (YIG) heterostructures at room temperature. The centimeter-scale amorphous MWT films are deposited on liquid-phase-epitaxial YIG by pulsed laser deposition technique. The significant SCC voltage is measured in the MWT layer with a sizable spin Hall angle of ∼0.021 by spin pumping experiments. The control experiments by inserting MgO or Ag layer between MWT and YIG show that the SCC is mainly attributed to the inverse spin Hall effect rather than the thermal or interfacial Rashba effect. Our work provides a novel spin-source material for energy-efficient topological spintronic devices.

Topological quantum devices: a review.

The introduction of the concept of topology into condensed matter physics has greatly deepened our fundamental understanding of transport properties of electrons as well as all other forms of quasi particles in solid materials. It has also fostered a paradigm shift from conventional electronic/optoelectronic devices to novel quantum devices based on topology-enabled quantum device functionalities that transfer energy and information with unprecedented precision, robustness, and efficiency. In this article, the recent research progress in topological quantum devices is reviewed. We first outline the topological spintronic devices underlined by the spin-momentum locking property of topology. We then highlight the topological electronic devices based on quantized electron and dissipationless spin conductivity protected by topology. Finally, we discuss quantum optoelectronic devices with topology-redefined photoexcitation and emission. The field of topological quantum devices is only in its infancy, we envision many significant advances in the near future.

Research progress of intrinsic magnetic topological insulator MnBi<sub>2</sub>Te<sub>4</sub>

The interaction between non-trivial topological states and the magnetic order of intrinsic magnetic topological insulators gives rise to various exotic physical properties, including the quantum anomalous Hall effect and axion insulator. These materials possess great potential applications in low-power topological spintronic devices and topological quantum computation. Since the first intrinsic magnetic topological insulator, MnBi<sub>2</sub>Te<sub>4</sub>, was discovered in 2019, this material system has received significant attention from researchers and sparked a research boom. This paper begins with discussing the fundamental properties of MnBi<sub>2</sub>Te<sub>4</sub> and then turns to important research findings related to this intrinsic magnetic topological insulator. Specifically, it focuses on the quantum anomalous Hall effect, axion insulating state, and Majorana zero energy mode exhibited by the MnBi<sub>2</sub>Te<sub>4</sub> series. Furthermore, this paper highlights other research directions and current challenges associated with this material system. Finally, this paper provides a summary and outlook for future research on MnBi<sub>2</sub>Te<sub>4</sub>, aiming to offer valuable references for researchers in related fields.

Combined Magnetic Imaging and Anisotropic Magnetoresistance Detection of Dipolar Skyrmions

AbstractMagnetic skyrmions are localized particle‐like nontrivial swirls that are promising in building high‐performance topological spintronic devices. The read‐out functions in skyrmionic devices require the translation of magnetic skyrmions to electrical signals. Here, combined real‐space magnetic imaging and anisotropic magnetoresistance studies on dipolar skyrmions are reported. A single skyrmion chain and single skyrmion are observed using Lorentz transmission electron microscopy imaging. Meanwhile, the field, helicity, and skyrmion count dependence of anisotropic magnetoresistance of the Fe3Sn2 nanostructures are obtained simultaneously. These results demonstrate that the anisotropic magnetoresistance of skyrmions is independent of the helicity and proportional to the skyrmion count. This study promotes read‐out operations in skyrmion‐based spintronic devices.

Spin-Sensitive Epitaxial In2Se3 Tunnel Barrier in In2Se3/Bi2Se3 Topological van der Waals Heterostructure.

Current-generated spin arising from spin-momentum locking in topological insulator (TI) surface states has been shown to switch the magnetization of an adjacent ferromagnet (FM) via spin-orbit torque (SOT) with a much higher efficiency than heavy metals. However, in such FM/TI heterostructures, most of the current is shunted through the FM metal due to its lower resistance, and recent calculations have also shown that topological surface states can be significantly impacted when interfaced with an FM metal such as Ni and Co. Hence, placing an insulating layer between the TI and FM will not only prevent current shunting, therefore minimizing overall power consumption, but may also help preserve the topological surface states at the interface. Here, we report the van der Waals epitaxial growth of β-phase In2Se3 on Bi2Se3 by molecular beam epitaxy and demonstrate its spin sensitivity by the electrical detection of current-generated spin in Bi2Se3 surface states using a Fe/In2Se3 detector contact. Our density functional calculations further confirm that the linear dispersion and spin texture of the Bi2Se3 surface states are indeed preserved at the In2Se3/Bi2Se3 interface. This demonstration of an epitaxial crystalline spin-sensitive barrier that can be grown directly on Bi2Se3, and verification that it preserves the topological surface state, is electrically insulating and spin-sensitive, is an important step toward minimizing overall power consumption in SOT switching in TI/FM heterostructures in fully epitaxial topological spintronic devices.

Tunable skyrmion–edge interaction in magnetic multilayers by interlayer exchange coupling

Magnetic skyrmions are appealing for applications in emerging topological spintronic devices. However, when magnetic skyrmions in a nanowire are driven by an in-plane current, a transverse Magnus force deflects their trajectories from the current direction, which tends to push the skyrmion toward the edge. If the current density is exceedingly large, the skyrmion will be annihilated around the edge, leading to a greatly reduced propagation distance and a maximum speed of the skyrmion, which is detrimental to skyrmion-based spintronic applications. Here, we prepare a magnetic multilayer Ta/[Pt/Co]3/Ru/[Co/Pt]3 and tailor the interlayer exchange coupling strength by varying the thickness of the Ru layer. Based on the magneto-optic Kerr effect microscope, we find that the skyrmion–edge interaction is tunable by the interlayer exchange coupling strength, namely, the strength of the repulsive potential from the film edge is tailored by the interlayer exchange coupling strength. Our results unveil the significant role of the interlayer exchange coupling in skyrmion dynamics.

Topological surface state enhanced ultrafast spin dynamics of Fe/Bi2Se3 heterostructures

Topological insulators (TIs) with distinct topological surface states (TSSs) have served as fertile ground to investigate spintronics and quantum information devices. Spin transport properties of ferromagnet (FM)/TI heterostructures have been revealed due to the spin-momentum-locked TSS. The role of the TSS on laser-induced ultrafast spin dynamics, however, is not well understood. Here, we find that the TSS can not only significantly accelerate the ultrafast demagnetization but can also enhance the Gilbert damping factor of $\mathrm{Fe}/{\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$ heterostructures. We conclude that the TSS enhanced ultrafast spin dynamics is attributed to the strong hybridization of Fe and ${\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$ orbitals near the Fermi level. Our findings suggest that the manipulation of ultrafast spin dynamics of a FM/TI via the TSS can open an avenue to utilize future topological spintronic devices or quantum information processing approaching femtosecond timescales.

Electrical manipulation of skyrmions in a chiral magnet

Writing, erasing and computing are three fundamental operations required by any working electronic device. Magnetic skyrmions could be essential bits in promising in emerging topological spintronic devices. In particular, skyrmions in chiral magnets have outstanding properties like compact texture, uniform size, and high mobility. However, creating, deleting, and driving isolated skyrmions, as prototypes of aforementioned basic operations, have been a grand challenge in chiral magnets ever since the discovery of skyrmions, and achieving all these three operations in a single device is even more challenging. Here, by engineering chiral magnet Co8Zn10Mn2 into the customized micro-devices for in-situ Lorentz transmission electron microscopy observations, we implement these three operations of skyrmions using nanosecond current pulses with a low current density of about 1010 A·m−2 at room temperature. A notched structure can create or delete magnetic skyrmions depending on the direction and magnitude of current pulses. We further show that the magnetic skyrmions can be deterministically shifted step-by-step by current pulses, allowing the establishment of the universal current-velocity relationship. These experimental results have immediate significance towards the skyrmion-based memory or logic devices.

Antiferromagnetic topological crystalline insulator and mixed Weyl semimetal in two-dimensional NpAs monolayer

Magnetic topological states have attracted significant attentions due to their intriguing quantum phenomena and potential applications in topological spintronic devices. Here, we propose a two-dimensional material NpAs monolayer as a candidate for multiple topological states accompanied with the changes of magnetic structures. Under the antiferromagnetic configuration, the long-awaited topological crystalline insulator (TCI) emerges with a nonzero mirror Chern number and a giant band gap of 630 meV, and remarkably a pair of gapless edge states can be tailored by rotating the magnetization directions while the TCI phase survives. Moreover, we establish the existence of quantum anomalous Hall effect and nontrivial nodal points under the ferromagnetic configuration, thereby giving rise to the mixed Weyl semimetal after adding the magnetization direction to topological classification. Our findings not only provide an ideal candidate for uncovering exotic topological characters with magnetism but also put forward potential applications in topological spintronics.

Integration of the noncollinear antiferromagnetic metal Mn3Sn onto ferroelectric oxides for electric-field control

Noncollinear antiferromagnetic materials have received dramatically increasing attention in the field of spintronics as their exotic topological features such as the Berry-curvature-induced anomalous Hall effect and possible magnetic Weyl states could be utilized in future topological antiferromagnetic spintronic devices. In this work, we report the successful integration of the antiferromagnetic metal Mn3Sn thin films onto ferroelectric oxide PMN-PT. By optimizing growth, we realized the large anomalous Hall effect with small switching magnetic fields of several tens mT fully comparable to those of bulk Mn3Sn single crystals, anisotropic magnetoresistance and negative parallel magnetoresistance in Mn3Sn thin films with antiferromagnetic order, which are similar to the signatures of the Weyl state in bulk Mn3Sn single crystals. More importantly, we found that the anomalous Hall effect in antiferromagnetic Mn3Sn thin films can be manipulated by electric fields applied onto the ferroelectric materials, thus demonstrating the feasibility of Mn3Sn-based topological spintronic devices operated in an ultralow power manner.

Electrochemical exfoliation of graphene-like two-dimensional nanomaterials.

Unlike zero-dimensional quantum dots, one-dimensional nanowires/nanorods, and three-dimensional networks or even their bulk counterparts, the charge carriers in two-dimensional (2D) materials are confined along the thickness while being allowed to move along the plane. They have distinct characteristics like strong quantum confinement, tunable thickness, and high specific surface area, which makes them a promising candidate in a wide range of applications such as electronics, topological spintronic devices, energy storage, energy conversion, sensors, biomedicine, catalysis, and so on. After the discovery of the extraordinary properties of graphene, other graphene-like 2D materials have attracted a great deal of attention. Like graphene, to realize their potential applications, high efficiency and low cost industrial scale methods should be developed to produce high-quality 2D materials. The electrochemical methods usually performed under mild conditions are convenient, controllable, and suitable for mass production. In this review, we introduce the latest and most representative investigations on the fabrication of 2D monoelemental Xenes, 2D transition-metal dichalcogenides, and other important emerging 2D materials such as organic framework (MOF) nanosheets and MXenes through electrochemical exfoliation. The electrochemical exfoliation conditions of the bulk layered materials are discussed. The numerous factors which will affect the quality of the exfoliated 2D materials, the possible exfoliating mechanism and potential applications are summarized and discussed in detail. A summary of the discussion together with perspectives and challenges for the future of this emerging field is also provided in the last section.

Accessing the Intrinsic Spin Transport in a Topological Insulator by Controlling the Crossover of Bulk-to-Surface Conductance.

We report a method to control contributions of bulk and surface states in the topological insulator Bi_{2}Te_{2}Se that allows accessing the spin-polarized transport endowed by topological surface states. An intrinsic surface dominant transport is established when cooling the sample to low temperature or reducing the conduction channel length, both achieved insitu in the transport measurements with a four-probe scanning tunneling microscope without the need of further tailoring the sample. The topological surface states show characteristic transport behaviors with mobility about an order of magnitude higher than reported before, and a spin polarization approaching the theoretically predicted value. Our result demonstrates accessibility to the intrinsic high mobility spin transport of topological surface states, which paves a way to realizing topological spintronic devices.

Switching of charge-current-induced spin polarization in the topological insulatorBiSbTeSe2

The charge-current-induced spin polarization is a key property of topological insulators for their applications in spintronics. However, topological surface states are expected to give rise to only one type of spin polarization for a given current direction, which has been a limiting factor for spin manipulations. Here, we report that in devices based on the bulk-insulating topological insulator ${\mathrm{BiSbTeSe}}_{2}$, an unexpected switching of spin polarization was observed upon changing the chemical potential. The spin polarization expected from the topological surface states was detected in a heavily electron-doped device, whereas the opposite polarization was reproducibly observed in devices with low carrier densities. We propose that the latter type of spin polarization stems from topologically trivial two-dimensional states with a large Rashba spin splitting, which are caused by a strong band bending at the surface of ${\mathrm{BiSbTeSe}}_{2}$ beneath the ferromagnetic electrode used as a spin detector. This finding paves the way for realizing the ``spin transistor'' operation in future topological spintronic devices.