Switching of charge-current-induced spin polarization in the topological insulatorBiSbTeSe2

Abstract

The charge-current-induced spin polarization is a key property of topological insulators for their applications in spintronics. However, topological surface states are expected to give rise to only one type of spin polarization for a given current direction, which has been a limiting factor for spin manipulations. Here, we report that in devices based on the bulk-insulating topological insulator ${\mathrm{BiSbTeSe}}_{2}$, an unexpected switching of spin polarization was observed upon changing the chemical potential. The spin polarization expected from the topological surface states was detected in a heavily electron-doped device, whereas the opposite polarization was reproducibly observed in devices with low carrier densities. We propose that the latter type of spin polarization stems from topologically trivial two-dimensional states with a large Rashba spin splitting, which are caused by a strong band bending at the surface of ${\mathrm{BiSbTeSe}}_{2}$ beneath the ferromagnetic electrode used as a spin detector. This finding paves the way for realizing the ``spin transistor'' operation in future topological spintronic devices.