Topological Quantum Materials Research Articles

Selective and quasi-continuous switching of ferroelectric Chern insulator devices for neuromorphic computing.

Quantum materials exhibit dissipationless topological edge state transport with quantized Hall conductance, offering notable potential for fault-tolerant computing technologies. However, the development of topological edge state-based computing devices remains a challenge. Here we report the selective and quasi-continuous ferroelectric switching of topological Chern insulator devices, showcasing a proof-of-concept demonstration in noise-immune neuromorphic computing. We fabricate this ferroelectric Chern insulator device by encapsulating magic-angle twisted bilayer graphene with doubly aligned h-BN layers and observe the coexistence of the interfacial ferroelectricity and the topological Chern insulating states. The observed ferroelectricity exhibits an anisotropic dependence on the in-plane magnetic field. By tuning the amplitude of the gate voltage pulses, we achieve ferroelectric switching between any pair of Chern insulating states in the presence of a finite magnetic field, resulting in 1,280 ferroelectric states with distinguishable Hall resistance levels on a single device. Furthermore, we demonstrate deterministic switching between two arbitrary levels among the record-high number of ferroelectric states. This unique switching capability enables the implementation of a convolutional neural network resistant to external noise, utilizing the quantized Hall conductance levels of the Chern insulator device as weights. Our study provides a promising avenue towards the development of topological quantum neuromorphic computing, where functionality and performance can be drastically enhanced by topological quantum materials.

Spin Gapless Quantum Materials and Devices.

Quantum materials, with nontrivial quantum phenomena and mechanisms, promise efficient quantum technologies with enhanced functionalities. Quantum technology is held back because a gap between fundamental science and its implementation is not fully understood yet. In order to capitalize the quantum advantage, a new perspective is required to figureout and close this gap. In this review, spin gapless quantum materials, featured by fully spin-polarized bands and the electron/hole transport, are discussed from the perspective of fundamental understanding and device applications. Spin gapless quantum materials can be simulated by minimal two-band models and could help to understand band structure engineering in various topological quantum materials discovered so far. It is explicitly highlighted that various types of spin gapless band dispersion are fundamental ingredients to understand quantum anomalous Hall effect. Based on conventional transport in the bulk and topological transport on the boundaries, various spintronic device aspects of spin gapless quantum materials as well as their advantages in different models for topological field effect transistors arereviewed.

Experimental Evidence for a Berry Curvature Quadrupole in an Antiferromagnet

Berry curvature multipoles appearing in topological quantum materials have recently attracted much attention. Their presence can manifest in novel phenomena, such as nonlinear anomalous Hall effects (NLAHE). The notion of Berry curvature multipoles extends our understanding of Berry curvature effects on the material properties. Hence, research on this subject is of fundamental importance and may also enable future applications in energy harvesting and high-frequency technology. It was shown that a Berry curvature dipole can give rise to a second-order NLAHE in materials of low crystalline symmetry. Here, we demonstrate a fundamentally new mechanism for Berry curvature multipoles in antiferromagnets that are supported by the underlying magnetic symmetries. Carrying out electric transport measurements on the kagome antiferromagnet FeSn, we observe a third-order NLAHE, which appears as a transverse voltage response at the third harmonic frequency when a longitudinal ac drive is applied. Interestingly, this NLAHE is strongest at and above room temperature. We combine these measurements with a scaling law analysis, a symmetry analysis, model calculations, first-principle calculations, and magnetic Monte Carlo simulations to show that the observed NLAHE is induced by a Berry curvature quadrupole appearing in the spin-canted state of FeSn. At a practical level, our study establishes NLAHE as a sensitive probe of antiferromagnetic phase transitions in other materials—such as moiré superlattices, two-dimensional van der Waal magnets, and quantum spin liquid candidates, which remain poorly understood to date. More broadly, Berry curvature multipole effects are predicted to exist for 90 magnetic point groups. Hence, our work opens a new research area to study a variety of topological magnetic materials through nonlinear measurement protocols. Published by the American Physical Society 2024

Large out-of-plane spin–orbit torque in topological Weyl semimetal TaIrTe4

The unique electronic properties of topological quantum materials, such as protected surface states and exotic quasiparticles, can provide an out-of-plane spin-polarized current needed for external field-free magnetization switching of magnets with perpendicular magnetic anisotropy. Conventional spin–orbit torque (SOT) materials provide only an in-plane spin-polarized current, and recently explored materials with lower crystal symmetries provide very low out-of-plane spin-polarized current components, which are not suitable for energy-efficient SOT applications. Here, we demonstrate a large out-of-plane damping-like SOT at room temperature using the topological Weyl semimetal candidate TaIrTe4 with a lower crystal symmetry. We performed spin–torque ferromagnetic resonance (STFMR) and second harmonic Hall measurements on devices based on TaIrTe4/Ni80Fe20 heterostructures and observed a large out-of-plane damping-like SOT efficiency. The out-of-plane spin Hall conductivity is estimated to be (4.05 ± 0.23)×104 (ℏ ⁄ 2e) (Ωm)−1, which is an order of magnitude higher than the reported values in other materials.

3D Carbon Allotropes: Topological Quantum Materials with Obstructed Atomic Insulating Phases, Multiple Bulk‐Boundary Correspondences, and Real Topology

AbstractThe study of topological phases with unconventional bulk‐boundary correspondences and nontrivial real Chern number has garnered significant attention in the topological states of matter. Using the first‐principle calculations and theoretical analysis, a high‐throughput material screening of the 3D obstructed atomic insulators (OAIs) and 3D real Chern insulators (RCIs) based on the Samara Carbon Allotrope Database (SACADA) are performed. Results show that 422 out of 703 3D carbon allotropes are 3D OAIs with multiple bulk‐boundary correspondences, including 2D obstructed surface states (OSSs) and 1D hinge states, which are in 1D and 2Ds lower than the 3D bulk, respectively. The 2D OSSs in these OAIs can be modified when subjected to appropriate boundaries, which benefits the investigation of surface engineering and the development of efficient topological catalysts. These 422 OAIs, which have 2D and 1D boundary states, are excellent platforms for multi‐dimensional topological boundaries research. Remarkably, 138 of 422 OAIs are also 3D RCIs, which show a nontrivial real topology in the protection of spacetime inversion symmetry. This work not only provides a comprehensive list of 3D carbon‐based OAIs and RCIs, but also guides their application in various aspects based on multiple bulk‐boundary correspondences and real topological phases.

Atomically precise engineering of spin–orbit polarons in a kagome magnetic Weyl semimetal

Atomically precise defect engineering is essential to manipulate the properties of emerging topological quantum materials for practical quantum applications. However, this remains challenging due to the obstacles in modifying the typically complex crystal lattice with atomic precision. Here, we report the atomically precise engineering of the vacancy-localized spin–orbit polarons in a kagome magnetic Weyl semimetal Co3Sn2S2, using scanning tunneling microscope. We achieve the step-by-step repair of the selected vacancies, leading to the formation of artificial sulfur vacancies with elaborate geometry. We find that that the bound states localized around these vacancies undergo a symmetry dependent energy shift towards Fermi level with increasing vacancy size. As the vacancy size increases, the localized magnetic moments of spin–orbit polarons become tunable and eventually become itinerantly negative due to spin–orbit coupling in the kagome flat band. These findings provide a platform for engineering atomic quantum states in topological quantum materials at the atomic scale.

Terahertz Plasmon Polaritons in Large Area Bi2Se3 Topological Insulators

AbstractAssessing the nature of topological quantum materials, and in particular probing the existence of topological surface states, is a very challenging task. Terahertz (THz) frequency scattering near‐field optical microscopy has emerged as an effective technique to investigate the presence of massless surface carriers by locally probing collective surface excitations, i.e., plasmon polaritons, whose dispersion critically depends on the density and nature of surface carriers. Here, thin (14–19 nm) films of Bi2Se3 are experimentally investigated through a combination of x‐ray diffraction, Hall‐bar magneto‐transport, and near‐field detectorless optical holography at THz frequencies, from 2 to 4.3 THz. The dispersion of surface plasmon polaritons are determined for different Bi2Se3 film thicknesses, proving the presence of massless surface carriers. The results open intriguing opportunities in THz nano‐plasmonics and topological nano‐photonics including the development of superlenses and metasurfaces, making use of plasmon polaritons.

Research Progress of Topological Quantum Materials: From First-Order to Higher-Order

The exploration of topologically nontrivial states in condensed matter systems, along with their novel transport properties, has garnered significant research interest. This review aims to provide a comprehensive overview of representative topological phases, starting from the initial proposal of the quantum Hall insulator. We begin with a concise introduction, followed by a detailed examination of first-order topological quantum phases, including gapped and gapless systems, encompassing relevant materials and associated phenomena in experiment. Subsequently, we delve into the realm of exotic higher-order topological quantum phases, examining both theoretical propositions and experimental findings. Moreover, we discuss the mechanisms underlying the emergence of higher-order topology, as well as the challenges involved in experimentally verifying materials exhibiting such properties. Finally, we outline future research directions. This review not only systematically surveys various types of topological quantum states, spanning from first-order to higher-order, but also proposes potential approaches for realizing higher-order topological phases, thereby offering guidance for the detection of related quantum phenomena in experiments.

Gigantic Anisotropy of Self-Induced Spin-Orbit Torque in Weyl Ferromagnet Co2MnGa.

Spin-orbit torque (SOT) is receiving tremendous attention from both fundamental and application-oriented aspects. Co2MnGa, a Weyl ferromagnet that is in a class of topological quantum materials, possesses cubic-based high structural symmetry, the L21 crystal ordering, which should be incapable of hosting anisotropic SOT in conventional understanding. Here we show the discovery of a gigantic anisotropy of self-induced SOT in Co2MnGa. The magnitude of the SOT is comparable to that of heavy metal/ferromagnet bilayer systems, despite the high inversion symmetry of the Co2MnGa structure. More surprisingly, a sign inversion of the self-induced SOT is observed for different crystal axes. This finding stems from the interplay of the topological nature of the electronic states and their strong modulation by external strain. Our research enriches the understanding of the physics of self-induced SOT and demonstrates a versatile method for tuning SOT efficiencies in a wide range of materials for topological and spintronic devices.

Influence of Magnetic and Electric Fields on Universal Conductance Fluctuations in Thin Films of the Dirac Semimetal Cd3As2.

Time-reversal invariance (TRS) and inversion symmetry (IS) are responsible for the topological band structure in Dirac semimetals (DSMs). These symmetries can be broken by applying an external magnetic or electric field, resulting in fundamental changes to the ground state Hamiltonian and a topological phase transition. We probe these changes using universal conductance fluctuations (UCF) in the prototypical DSM, Cd3As2. With increasing magnetic field, the magnitude of the UCF decreases by a factor of , in agreement with numerical calculations of the effect of broken TRS. In contrast, the magnitude of the UCF increases monotonically when the chemical potential is gated away from the charge neutrality point. We attribute this to Fermi surface anisotropy rather than broken IS. The concurrence between experimental data and theory provides unequivocal evidence that UCF are the dominant source of fluctuations and offers a general methodology for probing broken-symmetry effects in topological quantum materials.

Anisotropic transport and multiple topology in quasi-one-dimensional ternary telluride NbNiTe5

Topological quantum materials, which feature nontrivial band topology, have been one of the most attractive research topics in condensed-matter physics in recent decades. The low-dimensional topologically nontrivial materials are especially appealing due to the rich implications for topological physics and the potential applications in next-generation spintronic devices. Here, we report the crystal growth, anisotropic magnetotransport, Hall effect, and quantum de Haas--van Alphen (dHvA) oscillations of a quasi-one-dimensional ternary telluride ${\mathrm{NbNiTe}}_{5}$. The pronounced dHvA oscillations under $H\ensuremath{\parallel}b$ reveal three major oscillation frequencies ${F}_{\ensuremath{\alpha}}=136.41\phantom{\rule{0.16em}{0ex}}\mathrm{T}, {F}_{\ensuremath{\beta}}=240.34\phantom{\rule{0.16em}{0ex}}\mathrm{T}$, and ${F}_{\ensuremath{\gamma}}=708.03$ T and the associated light effective masses of charge carriers. From the angular dependence of dHvA oscillations, we have revealed the identified frequencies exhibit anisotropic character, all of which arise from the holelike Fermi surface sheets formed by band 1 (${F}_{\ensuremath{\alpha}}$ and ${F}_{\ensuremath{\beta}}$) and band 2 (${F}_{\ensuremath{\gamma}}$) by comparing with the Fermi surface calculations. First-principles calculations demonstrate that ${\mathrm{NbNiTe}}_{5}$ is a candidate of multiple topological material. In addition to the nonsymmorphic symmetry-protected nodal lines and band inversion (anticrossing) induced topological surface states, a ladder of topological gaps with the coexistence of strong and weak topology and a series of induced topological surface states are also identified.

Methods and Protocols: Practical Magnetic Measurement

Magnetic materials are useful in myriad ways, playing a critical role in modern society. Magnetic measurements, however, serve a much larger purpose than solely characterizing magnetic materials. Information obtained from magnetic measurements is essential across a wide swathe of materials, ranging from topological quantum materials to catalysts and battery materials. As with many advanced characterization and measurement techniques, practical aspects of magnetic measurements requires experience that is not readily gained from textbooks and user manuals. As one example, the nature of the measurement and the interpretation of data can be strongly sample-dependent, and appropriate experimental design is essential to obtain reliable results in an efficient manner. In this “Methods and Protocols” contribution, we seek to demystify magnetic measurements for nonexperts, discussing best practices for a range of different magnetic measurements with illustrative examples.

Screening Topological Quantum Cathode Materials for K-Ion Batteries by Graph Neural Network and First-Principles Calculations

Among the key parts of metal-ion batteries, cathode materials significantly affect the energy density and cycling stability. However, due to the large size of K+, not much progress has been made on cathode materials for K-ion batteries (KIBs). In this study, using the Atomistic Line Graph Neural Network and first-principles calculations, for the first time we screen cathode materials for KIBs from 7385 topological quantum materials with high electronic conductivity and reversible capacity. The experimentally synthesized K2MnS2 is discovered to have a reversible capacity of 203.8 mAh/g, an energy density of 564.5 Wh/kg, a small volume change of 6.4%, and multiple channels for K+ transport with fast dynamics. Furthermore, K2MnS2 shows high electrochemical interface stability with the reported solid electrolytes of K4V2O7, and K3NbP2O9. These findings suggest that topological quantum materials expand the design space of battery cathodes.

Metavalent Bonding-Mediated Dual 6s2 Lone Pair Expression Leads to Intrinsic Lattice Shearing in n-Type TlBiSe2.

Metavalent bonding has attracted immense interest owing to its capacity to impart a distinct property portfolio to materials for advanced functionality. Coupling metavalent bonding to lone pair expression can be an innovative way to propagate lattice anharmonicity from lone pair-induced local symmetry-breaking via the soft p-bonding electrons to achieve long-range phonon dampening in crystalline solids. Motivated by the shared chemical design pool for topological quantum materials and thermoelectrics, we based our studies on a three-dimensional (3D) topological insulator TlBiSe2 that held prospects for 6s2 dual-cation lone pair expression and metavalent bonding to investigate if the proposed hypothesis can deliver a novel thermoelectric material. Herein, we trace the inherent phononic origin of low thermal conductivity in n-type TlBiSe2 to dual 6s2 lone pair-induced intrinsic lattice shearing that strongly suppresses the lattice thermal conductivity to a low value of 1.1-0.4 Wm-1 K-1 between 300 and 715 K. Through synchrotron X-ray pair distribution function and first-principles studies, we have established that TlBiSe2 exists not in a monomorphous R-3m structure but as a distribution of distorted configurations. Via a cooperative movement of the constituent atoms akin to a transverse shearing mode facilitated by metavalent bonding in TlBiSe2, the structure shuttles between various energetically accessible low-symmetry structures. The orbital interactions and ensuing multicentric bonding visualized through Wannier functions augment the long-range transmission of atomic displacement effects in TlBiSe2. With additional point-defect scattering, a κlatt of 0.3 Wm-1 K-1 was achieved in TlBiSeS with a maximum n-type thermoelectric figure of merit (zT) of ∼0.8 at 715 K.

Magnetic and Magnetotransport Properties of the Magnetic Topological Nodal‐Line Semimetal TbSbTe

AbstractThe magnetic properties, magneto‐resistivity, Hall resistivity, Seebeck coefficient, and heat capacity are investigated for a magnetic topological nodal‐line semimetal TbSbTe. The calculated energy‐band structures of TbSbTe show two nodal rings on the kx‐ky planes, and the Fermi surface possesses one electron pocket with an enclosure of one hole pocket around the Γ point. The multiple magnetic phase transitions are induced at critical magnetic fields of Hc1 ≈ 10.5 kOe, Hc2 ≈ 20.8 kOe, and Hc3 ≈ 38.2 kOe at 2 K for the H // ab plane. Temperature dependence of electrical resistivity displays a hump‐like feature around 240 K, a general positive slope above TN = 6 K but a negative slope below TN. The magnetoresistance exhibits a conversion from the semi‐classical H2 dependence at weak fields to the linear‐field dependence at high fields, indicating the presence of a Dirac linear energy dispersion. TbSbTe may provide an ideal platform for studying topological physics and designing devices based on topological quantum materials.

Interacting with Futuristic Topological Quantum Materials: A Potential Candidate for Spintronics Devices

Spintronics, also known as magneto-electronics or spin transport electronics, uses the magnetic moment of the electron due to intrinsic spin along with its electric charge. In the present review, the topological insulators (2D, 3D, and hydride) were discussed including the conducting edge of 2D topological insulators (TIs). Preparation methods of TIs along with fundamental properties, such as low power dissipation and spin polarized electrons, have been explored. Magnetic TIs have been extensively discussed and explained. Weyl phases, topological superconductors, and TIs are covered in this review. We have focused on creating novel spintronic gadgets based on TIs which have metallic topological exterior facades that are topologically defended and have an insulating bulk. In this review, topological phases are discussed as a potential candidate for novel quantum phenomena and new technological advances for fault-tolerant quantum computation in spintronics, low-power electronics, and as a host for Majorana fermions are elucidated. Room temperature stable magnetic skyrmions and anti-skyrmions in spintronics for next-generation memory/storage devices have been reported.

Research on Spintronic Functions of Non-Metallic Materials and Its Modulation by External Fields

Non-metallic materials, such as inorganic/organic semiconductors and topological quantum materials are now collecting significant attention in modern spintronics. The progress of the research field using the materials is quite rapid and tremendous amounts of significant studies have been published. In this review article, some important milestone works are introduced to enhance further acceleration of the research fields.

Synthesis and Crystal Structure of the Zintl Phases NaSrSb, NaBaSb and NaEuSb.

This work details the synthesis and the crystal structures of the ternary compounds NaSrSb, NaBaSb and NaEuSb. They are isostructural and adopt the hexagonal ZrNiAl-type structure (space group P6¯2m; Pearson code hP9). The structure determination in all three cases was performed using single-crystal X-ray diffraction methods. The structure features isolated Sb3- anions arranged in layers stacked along the crystallographic c-axis. In the interstices, alkali and alkaline-earth metal cations are found in tetrahedral and square pyramidal coordination environments, respectively. The formal partitioning of the valence electrons adheres to the valence rules, i.e., Na+Sr2+Sb3-, Na+Ba2+Sb3- and Na+Eu2+Sb3- can be considered as Zintl phases with intrinsic semiconductor behavior. Electronic band structure calculations conducted for NaBaSb are consistent with this notion and show a direct gap of approx. 0.9 eV. Additionally, the calculations hint at possible inverted Dirac cones, a feature that is reminiscent of topological quantum materials.

Optical bulk-boundary dichotomy in a quantum spin Hall insulator

The bulk-boundary correspondence is a critical concept in topological quantum materials. For instance, a quantum spin Hall insulator features a bulk insulating gap with gapless helical boundary states protected by the underlying Z2 topology. However, the bulk-boundary dichotomy and distinction are rarely explored in optical experiments, which can provide unique information about topological charge carriers beyond transport and electronic spectroscopy techniques. Here, we utilize mid-infrared absorption micro-spectroscopy and pump–probe micro-spectroscopy to elucidate the bulk-boundary optical responses of Bi4Br4, a recently discovered room-temperature quantum spin Hall insulator. Benefiting from the low energy of infrared photons and the high spatial resolution, we unambiguously resolve a strong absorption from the boundary states while the bulk absorption is suppressed by its insulating gap. Moreover, the boundary absorption exhibits strong polarization anisotropy, consistent with the one-dimensional nature of the topological boundary states. Our infrared pump–probe microscopy further measures a substantially increased carrier lifetime for the boundary states, which reaches one nanosecond scale. The nanosecond lifetime is about one to two orders longer than that of most topological materials and can be attributed to the linear dispersion nature of the helical boundary states. Our findings demonstrate the optical bulk-boundary dichotomy in a topological material and provide a proof-of-principal methodology for studying topological optoelectronics.

Development of a laser-based angle-resolved-photoemission spectrometer with sub-micrometer spatial resolution and high-efficiency spin detection.

Angle-resolved photoemission spectroscopy with sub-micrometer spatial resolution (μ-ARPES), has become a powerful tool for studying quantum materials. To achieve sub-micrometer or even nanometer-scale spatial resolution, it is important to focus the incident light beam (usually from synchrotron radiation) using x-ray optics, such as the zone plate or ellipsoidal capillary mirrors. Recently, we developed a laser-based μ-ARPES with spin-resolution (LMS-ARPES). The 177nm laser beam is achieved by frequency-doubling a 355nm beam using a KBBF crystal and subsequently focused using an optical lens with a focal length of about 16mm. By characterizing the focused spot size using different methods and performing spatial-scanning photoemission measurement, we confirm the sub-micron spatial resolution of the system. Compared with the μ-ARPES facilities based on the synchrotron radiation, our LMS-ARPES system is not only more economical and convenient, but also with higher photon flux (>5 × 1013 photons/s), thus enabling the high-resolution and high-statistics measurements. Moreover, the system is equipped with a two-dimensional spin detector based on exchange scattering at a surface-passivated iron film grown on a W(100) substrate. We investigate the spin structure of the prototype topological insulator Bi2Se3 and reveal a high spin-polarization rate, confirming its spin-momentum locking property. This lab-based LMS-ARPES will be a powerful research tool for studying the local fine electronic structures of different condensed matter systems, including topological quantum materials, mesoscopic materials and structures, and phase-separated materials.