Anisotropic transport and multiple topology in quasi-one-dimensional ternary telluride NbNiTe5

Abstract

Topological quantum materials, which feature nontrivial band topology, have been one of the most attractive research topics in condensed-matter physics in recent decades. The low-dimensional topologically nontrivial materials are especially appealing due to the rich implications for topological physics and the potential applications in next-generation spintronic devices. Here, we report the crystal growth, anisotropic magnetotransport, Hall effect, and quantum de Haas--van Alphen (dHvA) oscillations of a quasi-one-dimensional ternary telluride ${\mathrm{NbNiTe}}_{5}$. The pronounced dHvA oscillations under $H\ensuremath{\parallel}b$ reveal three major oscillation frequencies ${F}_{\ensuremath{\alpha}}=136.41\phantom{\rule{0.16em}{0ex}}\mathrm{T}, {F}_{\ensuremath{\beta}}=240.34\phantom{\rule{0.16em}{0ex}}\mathrm{T}$, and ${F}_{\ensuremath{\gamma}}=708.03$ T and the associated light effective masses of charge carriers. From the angular dependence of dHvA oscillations, we have revealed the identified frequencies exhibit anisotropic character, all of which arise from the holelike Fermi surface sheets formed by band 1 (${F}_{\ensuremath{\alpha}}$ and ${F}_{\ensuremath{\beta}}$) and band 2 (${F}_{\ensuremath{\gamma}}$) by comparing with the Fermi surface calculations. First-principles calculations demonstrate that ${\mathrm{NbNiTe}}_{5}$ is a candidate of multiple topological material. In addition to the nonsymmorphic symmetry-protected nodal lines and band inversion (anticrossing) induced topological surface states, a ladder of topological gaps with the coexistence of strong and weak topology and a series of induced topological surface states are also identified.