Top Electrode Research Articles

A Plasmonic Optoelectronic Resistive Random-Access Memory for In-Sensor Color Image Cryptography.

The optoelectronic resistive random-access memory (RRAM) with the integrated function of perception, storage and intrinsic randomness displays promising applications in the hardware level in-sensor image cryptography. In this work, 2D hexagonal boron nitride based optoelectronic RRAM is fabricated with semitransparent noble metal (Ag or Au) as top electrodes, which can simultaneous capture color image and generate physically unclonable function (PUF) key for in-sensor color image cryptography. Surface plasmons of noble metals enable the strong light absorption to realize an efficient modulation of filament growth at nanoscale. Resistive switching curves show that the optical stimuli can impede the filament aggregation and promote the filament annihilation, which originates from photothermal effects and photogenerated hot electrons in localized surface plasmon resonance of noble metals. By selecting noble metals, the optoelectronic RRAM array can respond to distinct wavelengthsand mimic the biological dichromatic cone cells to perform the color perception. Due to the intrinsic and high-quality randomness, the optoelectronic RRAM can produce a PUF key in every exposure cycle, which can be applied in the reconfigurable cryptography. The findings demonstrate an effective strategy to build optoelectronic RRAM for in-sensor color image cryptography applications.

Overlapping top gate electrodes based on low temperature atomic layer deposition for nanoscale ambipolar lateral junctions

We present overlapping top gate electrodes for the formation of gate defined lateral junctions in semiconducting layers as an alternative to the back gate/top gate combination and to the split gate configuration. The optical lithography microfabrication of the overlapping top gates is based on multiple layers of low-temperature atomic layer deposited hafnium oxide, which acts as a gate dielectric and as a robust insulating layer between two overlapping gate electrodes exhibiting a large dielectric breakdown field of >1×109V m−1 . The advantage of overlapping gates over the split gate approach is confirmed in model calculations of the electrostatics of the gate stack. The overlapping gate process is applied to Hall bar devices of mercury telluride in order to study the interaction of different quantum Hall states in the nn′, np, pn and pp′ regime.

Understanding the Resistive Switching Behaviors of Top Electrode (Au, Cu, and Al)-Dependent TiO2-Based Memristive Devices.

Memristor-based neuromorphic computing is promising toward their potential application of handling complex parallel tasks in the period of big data. To implement brain-inspired applications of spiking neural networks, new physical architecture designs are needed. Here, a serial memristive structure (SMS) consisting of memristive devices with different top electrodes is proposed. Top electrodes Au, Cu, and Al are selected for nitrogen-doped TiO2 nanorod array-based memristive devices. The typical I-V cycles, retention, on/off ratio, and variations of cycle to cycle of top electrode-dependent memristive devices have been studied. Devices with Cu and Al electrodes exhibit a retention of over 104 s. And the resistance states of the device with the Al top electrode are reliable. Furthermore, the conductive mechanism underlining the I-V curves is discussed in detail. The interface-type mechanism and block conductance mechanism are illustrated, which are related to electron migration and ion/anion migration, respectively. Finally, the SMS has been constructed using memristive devices with Al and Cu top electrodes, which can mimic the spiking pulse-dependent plasticity of a synapse and a neuron body. The SMS provides a new approach to implement a fundamental physical unit for neuromorphic computing.

Inverted device architecture for high efficiency single-layer organic light-emitting diodes with imbalanced charge transport

Many wide-gap organic semiconductors exhibit imbalanced electron and hole transport, therefore efficient organic light-emitting diodes require a multilayer architecture of electron- and hole-transport materials to confine charge recombination to the emissive layer. Here, we show that even for emitters with imbalanced charge transport, it is possible to obtain highly efficient single-layer organic light emitting diodes (OLEDs), without the need for additional charge-transport and blocking layers. For hole-dominated emitters, an inverted single-layer device architecture with ohmic bottom-electron and top-hole contacts moves the emission zone away from the metal top electrode, thereby more than doubling the optical outcoupling efficiency. Finally, a blue-emitting inverted single-layer OLED based on thermally activated delayed fluorescence is achieved, exhibiting a high external quantum efficiency of 19% with little roll-off at high brightness, demonstrating that balanced charge transport is not a prerequisite for highly efficient single-layer OLEDs.

Magnetron-Sputtered Long-Term Superhydrophilic Thin Films for Use in Solid-State Cooling Devices

Pulse-magnetron-sputtered long-term superhydrophilic coatings have been synthesized to functionalize the surfaces of solid-state cooling devices, e.g., electrocaloric heat pumps, where not only a complete wetting of the surface by a fluid is intended, but also fast wetting and dewetting processes are required. The coatings consist of a (Ti,Si)O2 outer layer that provides lasting hydrophilicity thanks to the mesoporous structure, followed by an intermediate WO3 film that enables the reactivation of the wettability through visible light irradiation, and a W underlayer which can work as a top electrode of the electrocaloric components thanks to its suitable electrical and thermal conductivity properties. Process parameter optimization for each layer of the stack as well as the influence of the microstructure and composition on the wetting properties are presented. Finally, water contact angle measurements, surface energy evaluations, and a contact line dynamics assessment of evaporating drops on the coatings demonstrate that their enhanced wetting performance is attributed not only to their intrinsic hydrophilic nature but also to their porous microstructure, which promotes wicking and spreading at the nanometric scale.

E-beam synthesized fast-switching TiO2/SnO2 type-II heterostructure photodetector

A fast-switching TiO2/SnO2 heterostructure thin-film (TF) photodetector synthesized by electron beam evaporation technique is analyzed in this study. The substrate utilized is n-type silicon (Si), while gold (Au) is employed as the top electrode. To assess sample morphology and confirm elemental composition, field emission scanning electron microscopy (FESEM), energy dispersive x-ray spectroscopy (EDS), and chemical mapping were conducted. Structural characteristics were determined using X-ray diffraction (XRD) analysis. The XRD analysis confirmed the presence of various phases of TiO2 (anatase and rutile) and SnO2 (rutile). UV-Vis spectroscopy revealed multiple absorption peaks, at 447 nm, 495 nm, 560 nm, and 673 nm, within the visible spectrum. The device demonstrates high detectivity (D∗) of 1.737×109 Jones and a low noise equivalent power (NEP) of 0.765×10−10W. Evaluation of the device’s switching response through current-time characteristic (I-T) analysis indicates rapid switching with a rise time and fall time of 0.33 s and 0.36 s, respectively.

Electrical conductivity enhancement of rGO-MoS2 composite electrode for inverted PSC by parameter optimization

Carbon-based electrodes are widely used in photovoltaic, metal-ion batteries, supercapacitors, and sensors due to their low ohmic resistance and ability to integrate modifiers. Reduced graphene oxide (rGO) represents a promising alternative to graphite in carbon-based electrodes because of its high electrical conductivity, large surface area, and robust mechanical properties. This study aimed to optimize the fabrication parameters of rGO-MoS2 composite electrodes prepared via a one-pot hydrothermal method, focusing on maximizing their electrical conductivity for potential electronic applications. Taguchi analysis was employed to evaluate the impact of three key factors: rGO-MoS2 mixing ratio, annealing temperature, and annealing time. The novelty of this work lies in the systematic optimization approach using the Taguchi method, which allowed for the identification of the most significant factors and their optimal levels. The optimal combination was found to be a 1:1 ratio, 75 °C annealing temperature, and 15-min annealing time, resulting in an impressive electrical conductivity of 11 800 S m⁻1. This optimized rGO-MoS2 composite electrode exhibited an approximate 11 % reduction in sheet resistance compared to the unoptimized composite. Furthermore, all samples show an improvement in sheet resistance values compared to pure rGO and MoS2, which were 82.5 Ω/sq and 48.9 Ω/sq. Numerical simulations further revealed a 13.23 % improvement in device performance when the optimized rGO-MoS2 composite was implemented as the top electrode in an inverted perovskite solar cell, demonstrating the significant potential of this material for various electronic applications.

Synthesis and characterization of UV organic light-emitting electrochemical cells (OLECs) using phenanthrene fluorene derivatives for flexible applications

This paper details how two new small molecules, based on phenanthrene, were developed, and tailored for light-emitting device applications. An account is provided of both the compound synthesis and the methodologies employed in device fabrication. The ink formulation was improved by the use of triflate counterions. Standard bottom emitting devices were constructed on ITO glass along with top emitting devices on a sputter coated silver on glass substrate. Both structures exhibit UV emissions from the synthesized molecules. Successful EL emission within the UV spectrum range has been achieved by spray coating these active molecules onto glass slides. The optimized solution-processed devices produce UV emission using a semi-transparent silver nanowire top electrode. This results in electroluminescence (EL) peaking at 398 nm, with a maximum EL emission intensity of 20.5 μW/cm2.

Stable and repeatable ZrO2 RRAM achieved by NiO barrier layer for negative set phenomenon elimination

Resistive random-access memory (RRAM) is a promising non-volatile memory technology due to its fast operation, low power consumption, and high reliability. However, the negative set phenomenon remains a challenge for RRAM, which can lead to the deterioration of device switching parameters. In this study, we successfully addressed this issue by inserting a NiO blocking layer between the ZrO2 and Ag top electrodes in ZrO2-based RRAM. In addition, the resistive switching characteristics of the device are significantly enhanced by the incorporation of a p-type oxide NiO layer. Compared to single-layer ZrO2 devices, the double-layer Ag/NiO/ZrO2/ITO RRAM exhibits improved cycling durability (>500 cycles) and good retention time (3 × 104s). Our analysis of the device conduction mechanism and proposed resistive switching model suggest that oxygen vacancies play a connecting role in the reset process, leading to failed reset behavior. Through the incorporation of a p-type semiconductor NiO layer into ZrO2-based RRAMs, the interference of oxygen vacancies on the reset process can be effectively impeded. This approach not only provides an effective resolution to the unforeseen negative set phenomenon in RRAM devices, but it also holds paramount significance for the advancement of high-performance RRAMs.

Thermally Induced Phase Separation of the PEDOT:PSS Layer for Highly Efficient Laminated Polymer Light-Emitting Diodes.

Among various conductive polymers, the poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) film has been studied as a promising material for use as a transparent electrode and a hole-injecting layer in organic optoelectronic devices. Due to the increasing demand for the low-cost fabrication of organic light-emitting diodes (OLEDs), PEDOT:PSS has been employed as the top electrode by using the coating or lamination method. Herein, a facile method is reported for the fabrication of highly efficient polymer light-emitting diodes (PLEDs) based on a laminated transparent electrode (LTE) consisting of successive PEDOT:PSS and silver-nanowire (AgNW) layers. In particular, thermally induced phase separation (TIPS) of the PEDOT:PSS film is found to depend on the annealing temperature (Tanneal) during preparation of the LTE. At Tanneal close to the glass transition temperature of the PSS chains, a PSS-rich phase with a large number of PSS- molecules enhances the work function of the PEDOT:PSS on the glass-side surface relative to the air side. By using the optimized LTEs, bidirectional laminated PLEDs are obtained with a total external quantum efficiency of 2.9% and a turn-on voltage of 2.6 V, giving a comparable performance to that of the reference bottom-emitting PLED based on a costly evaporated metal electrode. In addition, an analysis of the angular characteristics, including the variation in the electroluminescence spectra and the change in luminance according to the emission angle, indicates that the laminated PLED with the LTE provides a more uniform angular distribution regardless of the direction of emission. Detailed optical and electrical analyses are also performed to evaluate the suitability of LTEs for the low-cost fabrication of efficient PLEDs.

Electrical control of the switching layer in perpendicular magnetic tunnel junctions with atomically thin Ir dusting

The use of magnetic tunnel junction (MTJ)-based devices constitutes an important basis of modern spintronics. However, the switching layer of an MTJ is widely believed to be an unmodifiable setup, instead of a user-defined option, posing a restriction to the function of spintronic devices. In this study, we realized a reliable electrical control of the switching layer in perpendicular MTJs with 0.1 nm Ir dusting. Specifically, a voltage pulse with a higher amplitude drives the magnetization switching of the MTJ's bottom electrode, while a lower voltage amplitude switches its top electrode. We discussed the origin of this controllability and excluded the possibility of back-hopping. Given the established studies on enhancing the voltage-controlled magnetic anisotropy effect by adopting Ir, we attribute this switching behavior to the significant diffusion of Ir atoms into the top electrode, which is supported by scanning transmission electron microscopy with atomic resolution.

Enhanced remnant polarization in ferroelectric Hf0.5Zr0.5O2 thin film capacitors through Mo top electrode by post-metallization annealing treatment

Zr-doped HfO2 (Hf0.5Zr0.5O2) ferroelectric thin films have garnered considerable attention due to their appealing attributes, including a large bandgap (>5 eV), low crystallization temperature, and compatibility with CMOS technology. In this study, we present the achievement of a substantial remnant polarization in ferroelectric Hf0.5Zr0.5O2 thin films, fabricated through atomic layer deposition, with Mo and TiN serving as the top and bottom electrodes, respectively. The Mo/Hf0.5Zr0.5O2/TiN capacitor exhibited commendable ferroelectric behavior and demonstrated high endurance within a thermal budget ranging from 400 to 500 °C. Leveraging the relatively low thermal expansion coefficient of the Mo top electrode facilitated the induction of in-plane tensile strain, fostering an increased formation of the ferroelectric orthorhombic phase within the Hf0.5Zr0.5O2 layer. Elevating the post-metallization annealing temperature to 500 °C yielded a substantial increase in 2Pr (≈54 μC/cm2) with excellent endurance exceeding 106 cycles. The influence of annealing temperature on the morphological and structural properties of Hf0.5Zr0.5O2 thin films was comprehensively analyzed through atomic force microscopy and grazing incidence X-ray diffraction analysis.

Interface Reactive Sputtering of Transparent Electrode for High-Performance Monolithic and Stacked Perovskite Tandem Solar Cells.

Sputtered indium tin oxide (ITO) fulfills the requirements of top transparent electrodes (TTEs) in semitransparent perovskite solar cells (PSCs) and stacked tandem solar cells (TSCs), as well as of the recombination layers in monolithic TSCs. However, the high-energy ITO particles will cause damage to the devices. Herein, the interface reactive sputtering strategy is proposed to construct cost-effective TTEs with high transmittance and excellent carrier transporting ability. Polyethylenimine (PEI) is chosen as the interface reactant that can react with sputtered ITO nanoparticles,so that, coordination compounds can be formed during the deposition process, facilitating the carrier transport at the interface of C60/PEI/ITO. Besides, the impact force of energetic ITO particles is greatly alleviated, and the intactness of the underlying C60 layer and perovskite layer is guaranteed. Thus, the prepared semitransparent subcells achieve a significantly enhanced power conversion efficiency (PCE) of 19.17%, surpassing those based on C60/ITO (11.64%). Moreover, the PEI-based devices demonstrate excellent storage stability, which maintains 98% of their original PCEs after 2000 h. On the strength of the interface reactive sputtering ITO electrode, a stacked all-perovskite TSC with a PCE of 26.89% and a monolithic perovskite-organic TSC with a PCE of 24.33% are successfully fabricated.

Optimization of Bilayer Resistive Random Access Memory Based on Ti/HfO2/ZrO2/Pt.

In this paper, the electrothermal coupling model of metal oxide resistive random access memory (RRAM) is analyzed by using a 2D axisymmetrical structure in COMSOL Multiphysics simulation software. The RRAM structure is a Ti/HfO2/ZrO2/Pt bilayer structure, and the SET and RESET processes of Ti/HfO2/ZrO2/Pt are verified and analyzed. It is found that the width and thickness of CF1 (the conductive filament of the HfO2 layer), CF2 (the conductive filament of the ZrO2 layer), and resistive dielectric layers affect the electrical performance of the device. Under the condition of the width ratio of conductive filament to transition layer (6:14) and the thickness ratio of HfO2 to ZrO2 (7.5:7.5), Ti/HfO2/ZrO2/Pt has stable high and low resistance states. On this basis, the comparison of three commonly used RRAM metal top electrode materials (Ti, Pt, and Al) shows that the resistance switching ratio of the Ti electrode is the highest at about 11.67. Finally, combining the optimal conductive filament size and the optimal top electrode material, the I-V hysteresis loop was obtained, and the switching ratio Roff/Ron = 10.46 was calculated. Therefore, in this paper, a perfect RRAM model is established, the resistance mechanism is explained and analyzed, and the optimal geometrical size and electrode material for the hysteresis characteristics of the Ti/HfO2/ZrO2/Pt structure are found.

BDAPbI4 Dion Jacobson hybrid perovskite-based artificial nociceptors on biodegradable substrate

With the current evolution in artificial intelligence technology, biodegradable biomimetic devices are essential to execute increasingly complicated tasks and respond to challenging work environments. Consequently, the integration of artificial nociceptors holds considerable importance in enhancing the capabilities of humanoid robots. Low-dimensional Hybrid organic–inorganic Perovskites (HOIPs) show promise in emulating biological neurons owing to their inherent ion migration properties. In this work, we present Dion-Jacobson hybrid perovskite (BDAPbI4 (BDA=NH3C4H8NH3)) diffusive memristor on a paper substrate to serve as an artificial nociceptor. The symmetric electrode configuration as Paper/Ag/PCBM/BDAPbI4/PMMA/Ag demonstrates low operating voltage diffusive memristor with an ON/OFF ratio of ∼103. The surface investigation of device before top electrode deposition via X-ray photoelectron spectroscopy XPS and electrical characteristics of the complete device reveal the interplay between Schottky barrier at BDAPbI4/Ag interface and conductive filament formation/rupture within active layer as the origin of the abrupt resistive switching. The characteristics of the diffusive memristor resemble those of biological nociceptors, displaying sensitivity to external stimuli and key attributes such as threshold response, lack of adaptation, and relaxation. These findings underscore the potential application of Dion-Jacobson hybrid perovskites (BDAPbI4) as diffusive memristors in future neuromorphic intelligence systems.

Towards the fabrication of fully printed flexible P(VDF-TrFE)-based piezoelectric sensors

The emergent Internet of Things (IoT) market has increased the need of sensors, actuators and nanogenerators, demanding cost-effective and large-scale manufacturing methods to fabricate these devices. Printed electronics (PE), which consists of the application printing and coating technologies in the deposition of functional materials, is one of the ways to process low-cost lightweight, semi-transparent, and flexible devices, usually employing polymers as functional materials. In this work we present the fabrication of poly(vinylidene fluoride-co-trifluoroethylene) (P(VDF-TrFE)) copolymer-based printed piezoelectric devices applying different semi-transparent flexible conductive substrates as bottom electrodes. The screen-printing process was chosen as a large-scale cost-effective fabrication method at low-temperature processing. Printing and the laser scribing parameters were established, and the effectively use of silver and PEDOT:PSS as top electrodes was demonstrated. The final devices were electrically poled and characterized by Electrochemical Impedance Spectroscopy (EIS) and correlations among the device’ performance regarding the different bottom and top electrodes were set up, leading to processing recommendations. Employing a cycle olefin polymer coated with silver nanowires (AgNW) as substrate, P(VDF-TrFE) as active material and silver as top electrode, a 223 µF/m2 capacitance was obtained when compressing at 2.37 KPa, demonstrating the devices charge storage capacity by the application of a mechanical stress. All the employed processing conditions can be easily integrated in a R2R pilot line, allowing high throughput, low-cost and large-area manufacturing. Additionally, the use of the polymer substrates enables the fabrication of flexible and lightweight devices.

Aging and degradation of transparent copper iodide thin film electrodes for functional electronic devices

Transparent CuJ copper iodide thin-film electrodes are widely used in various optoelectronic devices, such as solar cells, electroluminescent displays, touch screens, multifunctional photoconverters, etc. Their advantages are high transparency, because CuJ absorbs light in a limited range of wavelengths, which allows them to transmit visible light, making them ideal for transparent devices, low cost, because copper iodide is an inexpensive material, making it economically viable for mass production, simplicity fabrication, as CuJ can be easily deposited on various substrates using simple film deposition techniques such as vacuum deposition and magnetron sputtering. However, transparent CuJ type thin-film electrodes are subject to aging and degradation, which can reduce their performance and service life. The main factors affecting the aging and degradation of CuJ are the processes of oxidation, diffusion, degradation under the influence of light, and humidity. Despite numerous studies in the direction of obtaining high-quality thin films of copper iodide, today there is a need for a detailed study of the processes of their aging and degradation of properties. Therefore, in this article, we investigated the degradation processes of transparent upper copper iodide electrodes of thin-film multicomponent semiconductor heterostructures. This article shows the features of the use of film copper iodide in multilayer thin-film semiconductor structures. The influence of atmospheric conditions and lighting on the values of the rates of degradation of electrical resistance of copper iodide in semiconductor thin-film structures was studied. It has been found that atmospheric exposure to oxygen, moisture and other factors increases the electrical resistance of the copper iodide top electrode, and the use of Elastosil sealant does not lead to appreciable improvement. Heterostructures in vacuum are minimally affected by external factors, and therefore a significant increase in their CuJ upper electrode resistance values indicates the predominant role of aging of copper iodide films, which is not related to atmospheric conditions. It was established that natural sunlight significantly increases the degradation of copper iodide films, which should be taken into account when forming and using the corresponding thin film structures.

Exploration of electrode-modulated memory and threshold switching behaviour in Se-Te-Sn thin film devices

Due to their potential use in high-density, three-dimensional stackable cross-point array structures, the electrical switching ability of chalcogenide glasses has captured a lot of attention. Herein, the switching behaviour of unique Se86-xTe14Snx (x = 0, 2, 4, 6) chalcogenide glassy alloys in the form of a thin film were investigated. The electrode modulated dual functionality in switching was achieved by employing Aluminium (Al) and Silver (Ag), as top electrodes. The films with Al/Se86-xTe14Snx/Al interface exhibited memory-type switching due to the phase-changing properties of the material. The threshold voltage (Vth) decreased linearly from 12.75 V to 4.2 V at room temperature as Sn concentration in the glass increased. On the other hand, when the top electrode was replaced with Ag, the Ag/Se86-xTe14Snx/Al interface acted as a programmable metallization cell (PMC) showing threshold-switching properties. Ag/Se82Te14Sn4/Al thin film of thickness 200 nm showed promising results as a material for a unidirectional selector, due to the formation of temporary Ag filament inside chalcogenide material. The composition showed high selectivity (∼104), high endurance (>104 cycles), and low threshold voltage (∼1.6 V). The ability of the composition to exhibit electrode-dependent memory and threshold-switching phenomena makes the material an interesting case.

Vacancy-Engineered Nickel Ferrite Forming-Free Low-Voltage Resistive Switches for Neuromorphic Circuits.

Innovations in resistive switching devices constitute a core objective for the development of ultralow-power computing devices. Forming-free resistive switching is a type of resistive switching that eliminates the need for an initial high voltage for the formation of conductive filaments and offers promising opportunities to overcome the limitations of traditional resistive switching devices. Here, we demonstrate mixed charge state oxygen vacancy-engineered electroforming-free resistive switching in NiFe2O4 (NFO) thin films, fabricated as asymmetric Ti/NFO/Pt heterostructures, for the first time. Using pulsed laser deposition in a controlled oxygen atmosphere, we tune the oxygen vacancies together with the cationic valence state in the nickel ferrite phase, with the latter directly affecting the charge state of the oxygen vacancies. The structural integrity and chemical composition of the films are confirmed by X-ray diffraction and hard X-ray photoelectron spectroscopy, respectively. Electrical transport studies reveal that resistive switching characteristics in the films can be significantly altered by tuning the amount and charge state of the oxygen vacancy concentration during the deposition of the films. The resistive switching mechanism is seen to depend upon the migration of both singly and doubly charged oxygen vacancies formed as a result of changes in the nickel valence state and the consequent formation/rupture of conducting filaments in the switching layer. This is supported by the existence of an optimum oxygen vacancy concentration for efficient low-voltage resistive switching, below or above which the switching process is inhibited. Along with the filamentary switching mechanism, the Ti top electrode also enhances the resistive switching performance due to interfacial effects. Time-resolved measurements on the devices display both long- and short-term potentiation in the optimized vacancy-engineered NFO resistive switches, ideal for solid-state synapses achieved in a single system. Our work on correlated oxide forming-free resistive switches holds significant potential for CMOS-compatible low-power, nonvolatile resistive memory and neuromorphic circuits.

The Role of Device Architecture and Interfacial Layer on Performance of Semitransparent Organic Solar Cells

Semitransparent organic solar cells (ST‐OSCs) generally suffer from voltage loss in comparison to their opaque counterparts. Herein, ST‐OSCs constructed with conventional and inverted structures have been explored. The voltage losses of the inverted ST‐OSCs are lower than that of the conventional architectures when the thicknesses of the top transparent electrodes approach the percolation threshold, which is attributed to the larger surface energy of the bottom seeding layers, higher built‐in electric fields, and lower recombination losses. Moreover, ST‐OSCs with conventional architectures based on four commonly used electrode transporting layers (ETLs) PDINN, PDINO, PNDIT‐F3N, and PFN‐Br are employed to distinguish the Voc variation when capping with 10 nm top electrodes. It is revealed that ETL with larger surface energy and a stronger ability to reduce the cathode work function is more beneficial for reducing the voltage loss for ST‐OSCs. This work demonstrates the crucial role of device structure and interfacial layers in optimizing the ST‐OSC device performance.