Abstract
The integration of memristive effect devices for both information storage and computation can enhance the efficiency and performance of artificial intelligence (AI) systems，the memristors based on various polymers as functional layers show high application prospects. This research introduces 5 wt% silver nanowires (AgNWs) doping into the polyvinyl alcohol (PVA) memristor device, which enables stable resistive switching (RS) behavior across multiple operating voltages. Defects from PVA and AgNWs are counterbalanced by Ag ions stimulated by AgNWs and Ag top electrode, thus reducing conductive path randomness. The device demonstrates excellent cycle durability for 300 cycles and data retention for up to 104 s. Analysis of the I-V characteristic curve reveals that the current conduction mechanism is mainly related to Ohmic conduction, Space-charge-limited conduction (SCLC), and Schottky emission mechanisms. The AgNWs simplify the structure of conductive filaments (CFs) and facilitate the formation and breakage of CFs dominated by Ag atoms, leading to the conversion between HRS and LRS of the device.
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