Abstract
Unipolar resistive switching behaviors of the ZnO and Al2O3/ZnO films fabricated on flexible substrates by pulse laser deposition were studied in this paper. The films were deposited at room temperature without post-annealing treatment during the process. X-ray diffraction results indicated that ZnO film has a dominant peak at (002). Scanning electron microscopy observation showed a columnar grain structure of the ZnO film to the substrate. The bilayer device of Al2O3/ZnO films had stable resistive switching behaviors with a good endurance performance of more than 200 cycles, high resistive switching ratio of over 103 at a read voltage of 0.1 V, which is better than that of the single oxide layer device of ZnO film. A possible resistive switching filamentary mode was demonstrated in this paper. The conduction mechanisms of high and low resistance states can be explained by space charge limited conduction and Ohmic’s behaviors. The endurance of the bilayer (BL) device was not degraded upon bending cycles, which indicates the potential of the flexible resistive switching random access memory applications.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
