Thin Ti Research Articles

Effect of annealing on layer intermixing in nanoscale Cr/Ti multilayers depending on the period value

The effect of annealing on the intermixing of thin Ti and Cr layers and their crystallinity in multilayer structures was studied using XPS, TEM, XRR and XRD methods. Multilayer structures with varios period values (sum thickness of the Ti and Cr layers) in the range from 1.4 nm to 4.3 nm were considered. The analysis revealed the formation of TiCrx at the interfaces of the layers. The contribution of the formed chromide relative to the base layers increases with decreasing period of the structure. The layers in the structure with thinnest period were found to be X-ray amorphous, while the structure with a thicker period exhibited the appearance of large crystallites of chromium and titanium. Annealing of the multilayer structures induced additional intermixing, leading to an increase in the extension of the chromide regions. Additionally, it resulted in a reduction of internal stresses within the structures. When the multilayer structures were annealed at a temperature of 700 °C, complete degradation occurred, with all layers intermixing with each other and with the Si substrate.

Carbon nanotubes as efficient anode current collectors for stationary aqueous Zn–Br2 batteries

Static Zn–Br2 batteries are considered an attractive option for cost-effective and high-capacity systems for large energy storage. Yet, the corrosive nature of the Zn–Br2 electrolytes entails a careful selection of all cells' ingredients to avoid rapid degradation of the batteries upon cycling. Thanks to their high chemical resistance and excellent conductivity, carbonaceous electrodes are typically utilized as current collectors for the cathode side, while thin Zn or Ti foils are most widely used as the anodes' current collectors. However, these metals tend to corrode fast, thus undermining the desirable performance of the cells as durable and stable rechargeable batteries. We demonstrate the effective utilization of carbon nanotubes (CNT) films as highly stable anode current collector for Zn–Br2 batteries. Dispersion of the CNT beforehand in slurries containing anionic, cationic, or neutral surfactants yielded distinct chemical and physical characteristics of these carbonaceous electrodes. This, in turn, led to significant differences in the morphology of the deposited Zn, consequently affecting the electrochemical performance of the Zn anodes. These findings provide insight into the interactions between Zn cations and the surface of CNTs, offering opportunities for further surface modifications of CNTs as effective anodes’ substrates for Zn–Br2 batteries.

Photoelectrode FTO/ Anodized TiO2 Production and Characterization for Methylene Blue Affected Photoelectrochemical Decomposition

Background: The production of thin film TiO2 nanostructured systems for electrocatalytic, photocatalytic, and photoelectrocatalytic applications has been an essential topic in recent years. Due to the light-sensitive effect of TiO2, it can be produced by various methods and used as a photoelectrode to remove dye. Using magnetron sputtering, Ti thin films can be deposited on different substrates and converted into transparent TiO2 structures by electrochemical anodization. Methods: In this study, the thin Ti film was produced using a magnetic spraying technique on the FTO substrate, and then an anodic TiO2 structure was obtained by the anodization technique. TiO2 films produced by the anodizing technique were used as a photoelectrode for the degradation of MB. The reactor contained 400 mL of 20 mg/L MB solution at 20 °C. The produced photoelectrode was characterized by the SEM/EDS, FTIR, XRD, and UV-Vis Spectrophotometer analyses. Results: The EDS analysis confirmed the presence of titanium and oxygen in the FTO/ Anodized TiO2 photoelectrode. The XRD results showed that all the peaks of the produced FTO/ Anodic TiO2 were associated with the anatase phase of TiO2. According to the FTIR spectroscopy, the functional groups of the anodized TiO2 were obtained for the FTO/ Anodized TiO2. The electrocatalytic, photocatalytic, and photoelectrocatalytic degradation experiments were performed with the degradation of the dye solution of MB on the FTO/ Anodic TiO2 photoelectrode, and the rates of dye degradation were determined as 17.12%, 64.67%, and 82.12%, respectively. Conclusion: This study showed that the methylene blue dye of FTO/ Anodic TiO2 is a suitable photoelectrode for electrocatalytic, photocatalytic, and photoelectrocatalytic degradation.

Optimizing Ti/TiN Multilayers for UV, Optical and Near-IR Microwave Kinetic Inductance Detectors

Microwave Kinetic Inductance Detectors (MKIDs) combine significant advantages for photon detection like single photon counting, single pixel energy resolution, vanishing dark counts and µs time resolution with a simple design and the feasibility to scale up into the megapixel range. But high quality MKID fabrication remains challenging as established superconductors tend to either have intrinsic disadvantages, are challenging to deposit or require very low operating temperatures. As alternating stacks of thin Ti and TiN films have shown very impressive results for far-IR and sub-mm MKIDs, they promise significant improvements for UV, visible to near-IR MKIDs as well, especially as they are comparably easy to fabricate and control. In this paper, we present our ongoing project to adapt proximity coupled superconducting films for photon counting MKIDs. Some of the main advantages of Ti/TiN multilayers are their good control of critical temperature (Tc) and their great homogeneity of Tc even over large wafers, promising improved pixel yield especially for large arrays. We demonstrate the effect different temperatures during fabrication have on the detector performance and discuss excess phase noise observed caused by surface oxidization of exposed Si. Our first prototypes achieved photon energy resolving powers of up to 3.1 but turned out to be much too insensitive. As the work presented is still in progress, we also discuss further improvements planned for the near future.

Low sheet resistance buried metal bit line realized by high-temperature metal CVD process in vertical channel transistor array

With the continuous evolution of dynamic random access memory (DRAM) devices, there is a growing demand for increased storage density per unit area. In this work, we aim to create a high-density array of vertical channel transistors using advanced DRAM process technology. A thickness of SiO2 (X+3 nm) was determined for the protective layer, which shows the best-protecting effect. We employed CVD to grow thin Ti films on the array’s bottom. To reduce the resistance of the buried bit line (BBL), we formed a high-quality metal silicide using a thermal annealing process combined with self-align technology. Nanoprobe measurement results show an average resistance of approximately 60 Ω of the bit line of each cell transistor, where the low series resistance can improve device performance. Our work involved optimizing the protective layers and achieving high-performance BBLs, paving the way for the development of high-density DRAMs.

MoS2 thin film decorated TiO2 nanotube arrays on flexible Ti foil for solar water splitting application

MoS2/TiO2 nanostructure provides a lot of advantages in photoelectrochemical (PEC) applications due to the absorption of the wide spectrum solar radiation, more catalytically active sites, proper band alignment, and better separation of photogenerated charge carriers. Here we report PEC water splitting studies of MoS2 thin film grown by chemical vapor deposition on TiO2 nanotubes fabricated on flexible thin Ti foil. Raman and x-ray diffraction analysis confirmed the polycrystalline growth of a few layers MoS2 on TiO2/Ti through their characteristic peaks. Field emission scanning electron microscopy revealed the nanotube surface morphology of TiO2 having a diameter in the range of 200–300 nm. The chemical and electronic composition of MoS2 and TiO2 were investigated by x-ray photoelectron spectroscopy. PEC measurements performed in 0.5 M Na2SO4 aqueous electrolyte solution under 100 mW cm−2 (AM 1.5G) simulated sunlight revealed 2-fold improved photocurrent density for MoS2/TiO2 heterostructure (∼135.7 μA cm−2) compared to that of bare TiO2 (∼70 μA cm−2). This is attributed to extended light absorption and more catalytically active surface area resulting from MoS2 functionalization of the TiO2 nanotubes, which results in better PEC activity. This study provides a new insight to explore the performance of thin metal foil-based photoelectrode in PEC applications that can be beneficial to develop roll-to-roll device fabrication to advance futuristic flexible electronics.

Towards Controlled Transfer of (001) β-Ga2O3 to (0001) 4H-SiC Substrates

We demonstrate successful blistering of He-implanted (001) β-Ga2O3, bonding to (0001) 4H-SiC, and initial results towards large-area transfer of (001) β-Ga2O3 to 4H-SiC. Compatible with large-scale processing, exfoliation is an important step in controlled-thickness transfer of films for heterogeneous integration. Furthermore, integration of β-Ga2O3 to high thermal conductivity materials will be crucial for thermal management of β-Ga2O3-based power devices. Two-inch (001) β-Ga2O3 wafers were implanted with He+ at an energy of 160 keV and a dose of 5×1016 cm-2, which are the same implant parameters used previously to successfully exfoliate (010) β-Ga2O3.1 Strain fringes were observed after the implant which corresponded to a maximum strain of ~1.7%, which is higher than the ~1% strain when implanting (010) β-Ga2O31 likely due to the larger Poisson’s ratio of (001) β-Ga2O3.2 The implanted substrates were then bonded to (0001) 4H-SiC at room temperature using a ~5 nm thin Ti interlayer to assist with the bond. Both unbonded implanted substrates and the bonded structures were first annealed at 200 °C for 10 hours to simultaneously initiate He bubble nucleation at the implanted projected range (~0.68 μm) and strengthen the bond. Then, even after annealing at 500 °C for 10 hours to initiate He bubble growth, the (001) β-Ga2O3 did not transfer to the (0001) 4H-SiC. Unlike what was observed for (010) β-Ga2O3,1 blistering did not even occur at this temperature. Annealing at 800 °C for up to 12 hours resulted in ~10 μm blisters for the unbonded substrates, which is typically an indication that large wafer-area transfer can be achieved if bonding was done prior to annealing.3 However, the β-Ga2O3 substrate did not wafer split from the bonded structure, and instead only small area transfers up to ~200 μm were achieved. Only ~7% of the total bonded area transferred while the entire structure remained bonded. Strategies to improve transfer will be presented, including initiating a cold split prior to exfoliation and refined annealing strategies to improve He bubble nucleation and larger bubble growth at the projected range. These are promising results towards achieving large wafer-scale (001) β-Ga2O3 composite wafers, and when combined with subsurface damage-free chemical mechanical polishing,4 these composite wafers would be suitable for subsequent devices and/or epitaxial growth.The authors would like to acknowledge the support from the Office of Naval Research through a MURI program, grant No. N00014-18-1-2429. This research was performed while M.E.L. and J.S.L. held an NRC Research Associateship award at the U.S. Naval Research Laboratory.References M.E. Liao, et al., ECS J. Solid State Sci. Technol., 8(11), P673 (2019).K. Adachi, et al., J. Appl. Phys., 124, 085102 (2018).M. Bruel, et al., Jpn. J. Appl. Phys., 36, 1636 (1997).M.E. Liao, et al., J. Vac. Sci. Technol. A, 41, 013205 (2023). Figure 1

Development of oxidation-resistant and electrically conductive coating of Ti–Al–C system for the lightweight interconnects of solid oxide fuel cells

The paper studies oxidation resistance and electrical conductivity of dense coatings produced by vacuum-arc deposition technique on α-titanium thin (0.1 mm) substrate using a hot pressed Ti2AlC–TiC target. The coatings were deposited at low (7 mA/cm2) and high (15 mA/cm2) current densities on the substrate and marked LCD and HCD, respectively. This provided different local chemical and phase compositions of the coatings. It was found that phase compositions of the coatings differ from that of the target. The HCD coating has high oxidation resistance evaluated in terms of the specific weight gain (Δm/S = 0.06 mg/cm2) as well as high surface electrical conductivity (σ = 1.23·106 S/m) after long-term (1000 h) holding at 600 °C in the air due to the formation of an over thin (450 nm) Ti–Al-(C, O, N) near-surface layer. The thin titanium substrate with such Ti–Al–C coating is recommended as a lightweight interconnect of an intermediate-temperature solid oxide fuel cell.

Enhancement of photochromic molecule decolorization by coating a thin Ti(O) layer over gold nanoparticles

Abstract Photochemical decolorization reaction of terarylenes with a hydroxy or a methoxy group is studied on the surface of gold nanoparticles (AuNPs)/TiO2 thin hybrid film. AuNPs were deposited on TiO2 film after UV irradiation with HAuCl4. The colored form of terarylenes could not be decolorized at the bare AuNPs on TiO2 under irradiation of green light (530 nm in wavelength). On the other hand, effective decolorization activity of terarylene, having a hydroxy group, was observed at the surface of AuNPs/TiO2 hybrid film with an optimized number of Ti(O) insulator layers on AuNPs. The mechanism for the enhanced decoloration is proposed based on the difference in the substituent of the terarylenes.

Blade Test in Atmospheric-Pressure Ar Gas to Characterize Bonded Interface Fabricated Using Atomic Diffusion Bonding

A blade test was applied in atmospheric-pressure Ar gas for wafers bonded using atomic diffusion bonding processing. We assessed the variation of the values of surface free energy at the bonded interface γ calculated, for convenience, from the debonding length. For interfaces bonded using thin Zr and Ti films, γ measured in Ar maintained the initial value γ0(Ar) in the initial region of observation time t and started decreasing as t increased further. Results indicate that γ0(Ar) corresponds to the value without water stress corrosion effects. The initial value of γ measured in air with a higher blade insertion-speed was almost equal to γ0(Ar). Result obtained for wafers bonded using Al2O3 films were almost identical to those obtained using metal films. However, γ for wafers bonded using ZrO2 films did not maintain their initial values. They decreased gradually as t increased, even in Ar, suggesting high water stress corrosion effects.

Evaluation of microstructure, mechanical properties, and corrosion resistance for Ti-doped inconel 625 alloy produced by laser directed energy deposition

Additive manufacturing (AM) technology has opened up new opportunities to efficiently synthesize alloys and produce near-net shape components. In this study, Ti-doped Inconel 625 materials were produced to promote in-situ alloying between pre-alloyed Inconel 625 and elemental Ti powders by laser directed energy deposition, a predominant metal AM technique. The microstructure, mechanical properties, and corrosion resistance were evaluated before and after Ti addition and heat treatment (solutionization followed by aging). It was found that Ti addition alone did not cause significant change in microstructure. However, heat treatment caused migration of segregation species from interdendritic regions to intermetallic precipitates which occupy grain boundaries, and it modestly increased the average grain size for Ti-doped samples. Crystallographic analysis revealed a very strong cubic texture of Ti-doped Inconel 625 which only slightly decreased after heat treatment. Without heat treatment, the addition of Ti was not found to be beneficial to tensile properties of Inconel 625, due to the formation of thin Ti oxide films. However, the combination of Ti addition and heat treatment led to modest increase in hardness and tensile strength compared to the as-built Ti-free case, which is believed to result from the effects of Ti solid solution hardening, precipitation hardening, and dissolution of oxide films. Also, the combined effects can explain the pronounced increase of ductility for Ti-doped Inconel 625 after heat treatment, where the beneficial effect from oxide film dissolution could be dominant. In addition, under the as-built condition, corrosion resistance was found to be slightly higher for Ti-doped materials, but after heat treatment it dropped for Ti-doped materials while almost did not change for Ti-free case.

Ab initio supported study on the selective adsorption-induced microstructural difference of (Ti,Al)N/TiN and (Ti,Al)N/ZrN multilayers

Interface structure is essential for the mechanical properties of multilayers. Here, the effect of deposition process on the interface structure of arc-evaporated (Ti,Al)N/TiN and (Ti,Al)N/ZrN multilayers is studied by a combination of ab initio calculations and experiments. Based on x-ray diffractions and transmission electron microscope investigations, both multilayers with close modulation ratio and period reveal face centered cubic (fcc) structure with coherent interfaces. Nevertheless, thin (Ti,Zr)N layers are formed near the interfaces in (Ti,Al)N/ZrN multilayer, but are absent in (Ti,Al)N/TiN multilayer. Ab initio calculations suggest the selective absorption of Ti and Zr adatoms onto the surface of (Ti,Al)N/ZrN multilayer during deposition, which leads to the formation of (Ti,Zr)N-rich layers by interface. However, (Ti,Al)N/TiN multilayer is predicted to have almost constant surface adsorption of different adatoms.

Exploring thermally stable metal-oxide/SiO2 stack for metal oxide semiconductor memory and demonstration of pulse controlled linear response

We fabricated Al2O3/SiO2 stack structures with atomically thin Ti oxide layers at the interfaces using atomic layer deposition and investigated the capacitance–voltage (C–V) hysteresis of the metal-oxide-semiconductor (MOS) capacitors. We studied the effect of post-deposition annealing in the temperature range of 150 °C−500 °C on the C–V hysteresis and found that the Al2O3/SiO2-based stacks are thermally stable compared to ZrO2/SiO2- and HfO2/SiO2-based stacks. Using Al2O3/SiO2-based stacks, we investigated the impact of oxide layer thickness and gate electrode materials and studied pulse-induced current changes in MOS field-effect transistors.

Boosting Thermal Conductivity by Surface Plasmon Polaritons Propagating along a Thin Ti Film.

We experimentally demonstrate boosted in-plane thermal conduction by surface plasmon polaritons (SPPs) propagating along a thin Ti film on a glass substrate. Due to the lossy nature of metal, SPPs can propagate over centimeter-scale distances even along a supported metal film, and the resulting ballistic heat conduction can be quantitatively validated. Further, for a 100-nm-thick Ti film on a glass substrate, a significant enhancement of in-plane thermal conductivity compared to bulk value (∼25%) is experimentally shown. This Letter will provide a new avenue to employ SPPs for heat dissipation along a supported thin film, which can be readily applied to mitigate hot-spot issues in microelectronics.

Functional performance of thin Ag, SS, and Ti films on retro-reflective fabrics

Retro-reflective materials are gradually increasing in popularity and use due to their safety properties, and aesthetic advantages. This study details an experimental procedure of the functional performance of silver (Ag), stainless steel (SS), and titanium (Ti) coatings of 150 nm in thickness on retro-reflective fabrics (with plain, twill and diamond weave structures) via magnetron sputtering. The deposited thin films were characterised using CIE L* a* b* values, SEM, contact angle, air permeability, thermal conductivity, anti-static, IR and UV protection. The results reveal that Ag coated fabric can transfer away body heat, hence ensuring a feeling of coolness. The Ag coated fabric samples have an overall good infrared (IR) protective property followed by SS, with Ti having a poor IR protective performance. All of the coated fabrics show excellent ultraviolet protection with 50+ UPF ratings. Furthermore, the coated fabrics have good anti-static properties which prevent the build-up of static charge that can cause discomfort to the wearer, especially in dry weather conditions. The deposition of Ag, SS or Ti nanoparticles on the surface of the fabric increases the hydrophobicity of the material or results in a fabric with low wettability as evident from the measured contact angles.

Critical assessment and demonstration of high-emissivity coatings for improved infrared signal quality for Taylor–Quinney coefficient experimentation

Over the infrared (IR) spectrum metals have relatively low emissivity. Considering that modern studies focused on determining the Taylor–Quinney coefficient rely on IR-based measurements to quantify temperature rise, there is a need to improve measurement certainty. This is of particular concern during the earliest stages of deformation when small temperature rises result in a low IR-signal to noise ratio. Herein an economical approach to improving signal quality is presented based on the deposition of a thin high emissivity coating on the material substrate (i.e., specimen) of interest. Coating material and coating thickness selection are founded on both heat transfer and electromagnetic performance. A maximum allowable thickness of 1μm was determined for the coating to ensure the recorded temperature of the coating closely matches the temperature of the deforming substrate (i.e., specimen) during the sub-millisecond duration of a split-Hopkinson (or Kolsky) pressure bar experiment. Using the transfer matrix method, the spectral emissivity of coatings made from commonly available metallic deposition sources with increasing thicknesses was calculated. Theoretical predictions identified a 250 nm thick Ti coating as a promising candidate for increasing surface emissivity without the coating acting as a thermal barrier. Confirmation of the coating layer’s ability to substantially improve IR signal amplitudes was examined experimentally for two low emissivity materials, specifically OFHC copper (Cu) and Magnesium (Mg) alloy AZ31B. IR detector calibration experiments showed a four to six times improvement in signal amplitude compared to native Cu and Mg surfaces. Additionally, the calibration curves of coated specimens converge exhibiting the same behavior allowing for a unified calibration curve to be used regardless of substrate material. Split-Hopkinson pressure bar experiments supported by IR thermography were conducted on coated specimens and Taylor–Quinney coefficients are reported. Taylor–Quinney coefficients obtained, are compared to literature values when appropriate, and show positive agreement to previously reported values. Real-time high-speed imaging and post-mortem analysis showed robust adhesion between the substrate to the thin Ti layer up to 16% strain.

Filtered cathodic vacuum arc deposition of tetrahedral amorphous carbon thin films on surgical blades and its corrosion resistance in phosphate buffer solution (PBS) at pH 7.4

Surgical blades are prone to corrosion in a body fluid environment, increasing the risk of surgical infection and inflammation. In this paper, the ta-C thin films was deposited on surgical blades by filtered cathode vacuum arc (FCVA) method. Modern analytical methods such as SEM, Raman, surface profiler and electrochemical corrosion were used for the test and analysis. The results show that the corrosion potential and corrosion current density of uncoated surgical blades are −507 mV and 2.43 μA/cm2 during surgery operation in a simulated human environment (pH 7.4 PBS solution), and the corrosion potential of the ta-C thin films surgical blades immersed in 0.25 h, 0.5 h and 1 h are −395 mV, −431 mV, −445 mV, and the corrosion current density are 1.11 μA/cm2, 1.46 μA/cm2, 1.58 μA/ cm2. The results show that the ta-C thin films surgical blades are excellent corrosion resistance during surgery operation in a simulated human environment. SEM shows that the ta-C thin films surgical blades have a smooth surface with a compact and uniform films structure, and the thicknesses of the ta-C thin films and Ti transition layer are 2.2 µm and 2.4 µm respectively. The surface profiler shows that the average roughness of the surgical blades and the ta-C thin films surgical blades are 295.979 nm and 477.417 nm. Raman shows that ta-C thin films is of high purity, without any impurity phase, and does not cause other adverse reactions during surgery operation.

Microstructure evolution and mechanical properties of the TiB2-TiC-SiC composite ceramic and Nb brazed joint

A high-density TiB2-TiC-SiC composite ceramic was prepared through hot pressing. The average flexural strength, fracture toughness, and hardness of the sintered composite ceramic were 486 MPa, 6.21 MPa·m1/2, and 20.6 GPa, respectively. Then, the active brazing of the composite ceramic and Nb using Ti and Ni foils was investigated. The results revealed that the TiNi-Nb eutectic structure was formed in the brazing seam by dissolving Nb. The interfacial reactions between the three components of the TiB2-TiC-SiC ceramic and the liquid TiNiNb filler were essential for obtaining a robust joint. During the brazing process, the TiB2 component reacted with active Ti in the liquid filler to form TiB, and then the TiB reacted with Nb to form NbB and Nb3B2 at the ceramic interface. Meanwhile, a thin (Ti, Nb)C reaction layer was generated near the TiC and SiC components. By increasing the brazing temperature from 1160 °C to 1220 °C, the width of the reaction zone neighboring the TiB2-TiC-SiC ceramic increased from 13 μm to 29 μm, resulting in a change in the shear strength of the brazed joints. When the joint was brazed at 1180 °C for 10 min, the shear strength of the joint reached a maximum value of 179 MPa. The crack was observed on the ceramic substrate close to the reaction zone.

Brazing of Ti-coated SiC using a CoFeCrNiCu high entropy alloy filler via electric field-assisted sintering

Electric field-assisted sintering technology (FAST) was used to join SiC ceramic by using a CoFeCrNiCu high-entropy alloy filler. A thin Ti film was deposited on SiC surface by physical vapor deposition to reduce the residual thermal stress in the joint. The microstructure, bending strength, and bonding mechanism were systematically investigated. It was found that a discontinuous TiC layer could be formed at the interface and the interfacial reaction products changed with different brazing temperatures. A joint with a bending strength of 72 MPa was achieved at 1200 °C, which is 73% higher than that of the SiC brazed without Ti coating. This work provides a new insight in the interfacial design of ceramic brazing with high mechanical properties.

A Laser Shock-Based Disassembly Process for Adhesively Bonded Ti/CFRP Parts

The application of adhesively bonded joints in aerospace structural parts has increased significantly in recent years and the general advantages of their use are well-documented. One of the disadvantages of adhesive bonding is the relevant permanence, when compared to traditional mechanical fastening. End-of-life processes generally require the separation of the adherents for repair or recycling, and usually to achieve this, they combine large mechanical forces with a high temperature, thus damaging the adherents, while consuming large amounts of energy. In this work, a novel disassembly technique based on laser-induced shock waves is proposed for the disassembly of multi-material adhesively bonded structures. The laser shock technique can generate high tensile stresses that are able to break a joint, while being localized enough to avoid damaging the involved adherents. The process is applied to specimens made from a 3D-woven CFRP core bonded to a thin Ti layer, which is a common assembly used in state-of-the-art aircraft fan blades. The experimental process has been progressively developed. First, a single-sided shot is applied, while the particle velocity is measured at the back face of the material. This method proves ineffective for damage creation and led to a symmetric laser configuration, so that the tensile stress can be controlled and focused on the bond line. The symmetric approach is proved capable of generating a debonding between the Ti and the CFRP and propagating it by moving the laser spot. Qualitative assessment of the damage that is created during the symmetric experimental process indicates that the laser shock technique can be used as a material separation method.