Semiconductor Thin Films Research Articles

Resonant amplification of slow surface plasmon polaritons in a DC current pumped semiconductor/graphene waveguide with a groove defect

We propose the principle of a planar surface plasmon polariton amplifier composed of a complex waveguide structure based on a semiconductor thin film separated from a dielectric substrate by a graphene monolayer. The amplification of surface plasmon polaritons in that waveguide in the terahertz regime is driven by a direct current in the graphene layer under a synchronism condition that allows an efficient energy exchange from the collective flux of charge carriers in graphene and the surface electromagnetic wave in the semiconductor film. Positive feedback required for resonant amplification is achieved through surface plasmon polariton reflections at the edges of the active waveguide, one of which is formed by a local thickness defect (a groove) at the upper surface of the semiconductor film that also provides an exit channel for the energy of the amplified surface wave to be transferred to an adjacent passive thin film semiconductor waveguide. We determine the conditions required for the resonant amplification of surface plasmon polaritons in that complex structure, which are essentially governed by the geometry of the groove as well as by the characteristic parameters of the active and passive waveguides.

Sn-Doped Hematite Films as Photoanodes for Photoelectrochemical Alcohol Oxidation

Here, the modification of semiconductor thin film hematite photoanode by doping with Sn ions is reported. Undoped and Sn-doped hematite films are fabricated by the electrochemical deposition of FeOOH from aqueous alkaline electrolyte, followed by calcination in air. The photoanodes were tested in photoelectrocatalytic oxidation of water, methanol, ethylene glycol, and glycerol. It is shown that modification by tin dramatically increased the activity of hematite in the photoelectrochemical oxidation of alcohols upon visible light irradiation. The photoelectrocatalytic activity of Sn-modified hematite increased in the sequence of: H2O < MeOH < C2H2(OH)2 < C3H5(OH)3. The quantum yield of photocurrent in the oxidation of alcohols reached 10%. The relatively low photocurrent yield was ascribed to the recombination of photoexcited holes within the hematite layer and on surface states located at the hematite/electrolyte interface. Intensity-modulated photocurrent spectroscopy (IMPS) was used to quantify the recombination losses of holes via surface states. The IMPS results suggested that the hole acceptor in the electrolyte (alcohol) influences photocurrent both by changing the charge transfer rate in the photoelectrooxidation process and by the efficient suppression of the surface recombination of generated holes. Thin-film Sn-modified hematite photoanodes are promising instruments for the photoelectrochemical degradation of organic pollutants.

WO3/Bi2WO6 photoanode enhancement for photoelectrocatalytic water oxidation; scan rate effect optimization in the cyclic voltammetry deposition method

The photoelectrocatalytic approach is a very efficient technology for eliminating microorganisms and organic contaminants. The development of photoanode is widely recognized as a crucial approach to enhancing the efficiency of photoelectrocatalytic cells. The key goal of this methodology is to enhance the efficacy of photoelectrocatalytic oxidation by optimizing composited photoanode fabrication. This research development focuses mainly on fabricating composite WO3/Bi2WO6 semiconductor thin films with high water oxidation efficiency and favorable photoelectrocatalytic E. coli degradation applications. Cyclic voltammetry was utilized to create WO3/Bi2WO6 thin coatings on conducting glass while optimizing the photoelectrocatalytic activity via the scan rate parameter. The characteristics of the developed electrode, including charge transfer resistance, optical properties, morphology, crystal structure, chemical composition, and oxidation numbers, were investigated to improve photoelectrocatalytic activity. It was observed that the scanning rate significantly influenced the characteristics of the WO3/Bi2WO6 electrode and the photoelectrocatalytic activity on water oxidation. It was discovered that the WO3/Bi2WO6 electrode prepared with a scan rate of 25 mV/s exhibited the greatest photoelectrocatalytic water oxidation as well as distinguishing characteristics from other conditions. The decision to utilize decreased scanning rates has been determined to optimize the reaction kinetics and improve the film-forming properties of WO3/Bi2WO6. Significantly, the developed electrode can also be used to eliminate 87.5% of E.coli in 15 minutes via a photoelectrocatalytic catalytic mechanism. The photoanode composed of WO3/Bi2WO6 has promising capabilities in removing microorganisms and organic pollutants, making it a viable candidate for future advancements in wastewater management applications.

Optical Measurement of the Stoichiometry of Thin-Film Compounds Synthetized From Multilayers: Example of Cu(In,Ga)Se2.

The properties of centimeter-sized thin-film compound semiconductors depend upon the morphology and chemical composition of the multiple submicrometer-thick elemental and alloy precursor layers from which they are synthesized. The challenge is to characterize the individual precursor layers over these length scales during a multistep synthesis without altering or contaminating them. Conventional electron and X-ray-based morphological and compositional techniques are invasive, require preparation, and are thus incompatible with in-line synthesis processes. In a proof-of-concept study, we applied confocal laser scanning microscopy (CLSM) as a noninvasive optical imaging technique, which measures three-dimensional surface profiles with nanoscale resolution, to this challenge. Using an array of microdots containing Cu(In,Ga)Se2 semiconductor layers for solar cells as an example, we performed CLSM correlative studies to quantify morphological and layer thickness changes during four stages of a thin-film compound synthesis. Using simple assumptions, we measured the micrometer-scale spatially resolved chemical composition of stacked precursor layers to predict the final material phases formed and predict relative device performance. The high spatial resolution, coupled with the ability to measure sizeable areas without influencing the synthesis at high speed, makes CLSM an excellent prospect for research and quality control tool for thin films.

Structural, Optical, Electrical, and Thermoelectric Properties of Bi2Se3 Films Deposited at a High Se/Bi Flow Rate.

Low-temperature synthesis of Bi2Se3 thin film semiconductor thermoelectric materials is prepared by the plasma-enhanced chemical vapor deposition method. The Bi2Se3 film demonstrated excellent crystallinity due to the Se-rich environment. Experimental results show that the prepared Bi2Se3 film exhibited 90% higher transparency in the mid-IR region, demonstrating its potential as a functional material in the atmospheric window. Excellent mobility of 2094 cm2/V·s at room temperature is attributed to the n-type conductive properties of the film. Thermoelectrical properties indicate that with the increase in Se vapor, a slight decrease in conductivity of the film is observed at room temperature with an obvious increase in the Seebeck coefficient. In addition, Bi2Se3 thin film showed an enhanced power factor of as high as 3.41 μW/cmK2. Therefore, plasma-enhanced chemical vapor deposition (PECVD)-grown Bi2Se3 films on Al2O3 (001) substrates demonstrated promising thermoelectric properties.

Solution-processed Ta doped heterojunction structure ITO/ZTO thin film and application for high electrical and stable TFTs

Here, the solution-processed heterojunction structure Ta doped ZnSnO/InSnO (TaZTO/ITO) semiconductor thin film and TFTs have been fabricated on atomic layer deposition deposited Al2O3. The effects of Ta doping on the structure, thickness, thermal decomposition, contact angle, surface morphology, transmittance, chemical bond states and electrical characteristics of ZTO back-channel layer have been investigated by glancing angle incidence X-ray diffraction (GIXRD), cross sectional transmission electron microscopy (TEM), thermogravimetric analysis (TGA), contact angle meter, atomic force microscopy spectrometer (AFM), spectrometer, X-ray photoelectron spectroscopy (XPS) and semiconductor characterization system, respectively. Moreover, the influence of Ta doping in the electrical property and stability of heterojunction structure TaZTO/ITO TFTs has been also analyzed. A proper Ta concentration in the TaZTO back-channel layer can realize stable, dense film and good electrical and stable heterojunction structure TFTs due to inhibiting the generation of defects originated from oxygen vacancies. The heterojunction structure TaZTO/ITO TFTs with 1%mol Ta doping shows the best electrical property with the mobility (μ) of 4.72 cm2/Vs and the best stability with the threshold voltage shift of 0.95 V under positive bias stress. The strategy has coordinated the relationship between μ and stability effectively, and provide a new way for the development of oxide TFTs technology in the future.

Doping of molecular semiconductors through proton-coupled electron transfer.

The chemical doping of molecular semiconductors is based on electron-transfer reactions between the semiconductor and dopant molecules; here, the redox potential of the dopant is key to control the Fermi level of the semiconductor1,2. The tunability and reproducibility of chemical doping are limited by the availability of dopant materials and the effects of impurities such as water. Here we focused on proton-coupled electron-transfer (PCET) reactions, which are widely used in biochemical processes3,4; their redox potentials depend on an easily handled parameter, that is, proton activity. We immersed p-type organic semiconductor thin films in aqueous solutions with PCET-based redox pairs and hydrophobic molecular ions. Synergistic reactions of PCET and ion intercalation resulted in efficient chemical doping of crystalline organic semiconductor thin films under ambient conditions. In accordance with the Nernst equation, the Fermi levels of the semiconductors were controlled reproducibly with a high degree of precision-a thermal energy of about 25 millielectronvolts at room temperature and over a few hundred millielectronvolts around the band edge. A reference-electrode-free, resistive pH sensor based on this method is also proposed. A connection between semiconductor doping and proton activity, a widely used parameter in chemical and biochemical processes, may help create a platform for ambient semiconductor processes and biomolecular electronics.

Spray pyrolyzed lead oxide films for Schottky junction solar cells

In this paper, we report the fabrication of Schottky solar cell based on spray pyrolysed lead oxide semiconductor thin films. The non-linear junction were created by using high work function metal alloy of Au–Pd with hydrogen treated undoped and Indium doped lead oxide films. The output of Schottky device with different thickness of absorber layer is presented. The electrical parameters of the device are ascertained from the I–V measurements. The device with 2 μm thickness of absorber layer gives a Voc value of 148 mV and Jsc value of 0.21 mA/cm2. The high ideality factor obtained for all varying thickness is attributed to both the surface states generated under illumination and non-homogeneous interface due to the rough surfaces of spray pyrolysed films. In case of Indium doped lead oxide films, an enhanced Voc value of 570 mV and Jsc of 0.11 mA/cm2 is observed. The pristine films and doped films have been characterized by X-Ray diffraction, Raman spectroscopy and scanning electron microscopy.

Tailoring of the Structural, Optical, and Electrical Characteristics of Sol-Gel-Derived Magnesium-Zinc-Oxide Wide-Bandgap Semiconductor Thin Films via Gallium Doping.

The Ga-doped Mg0.2Zn0.8O (GMZO) transparent semiconductor thin films were prepared using the sol-gel and spin-coating deposition technique. Changes in the microstructural features, optical parameters, and electrical characteristics of sol-gel-synthesized Mg0.2Zn0.8O (MZO) thin films affected by the amount of Ga dopants (0-5 at%) were studied. The results of grazing incidence X-ray diffraction (GIXRD) examination showed that all as-prepared MZO-based thin films had a wurtzite-type structure and hexagonal phase, and the incorporation of Ga ions into the MZO nanocrystals refined the microstructure and reduced the average crystallite size and flatness of surface roughness. Each glass/oxide thin film sample exhibited a higher average transmittance than 91.5% and a lower average reflectance than 9.1% in the visible range spectrum. Experimental results revealed that the optical bandgap energy of the GMZO thin films was slightly higher than that of the MZO thin film; the Urbach energy became wider with increasing Ga doping level. It was found that the 2 at% and 3 at% Ga-doped MZO thin films had better electrical properties than the undoped and 5 at% Ga-doped MZO thin films.

Investigation of Phase Transition and Ultrawide Band Gap Engineering in MgGaO Semiconductor Thin Films

Investigation of Phase Transition and Ultrawide Band Gap Engineering in MgGaO Semiconductor Thin Films

Two-Dimensional Van Der Waals Thin Film and Device.

In the rapidly evolving field of thin-film electronics, the emergence of large-area flexible and wearable devices has been a significant milestone. Although organic semiconductor thin films, which can be manufactured through solution processing, have been identified, their utility is often undermined by their poor stability and low carrier mobility under ambient conditions. However, inorganic nanomaterials can be solution-processed and demonstrate outstanding intrinsic properties and structural stability. In particular, a series of two-dimensional (2D) nanosheet/nanoparticle materials have been shown to form stable colloids in their respective solvents. However, the integration of these 2D nanomaterials into continuous large-area thin with precise control of layer thickness and lattice orientation still remains a significant challenge. This review paper undertakes a detailed analysis of van der Waals thin films, derived from 2D materials, in the advancement of thin-film electronics and optoelectronic devices. The superior intrinsic properties and structural stability of inorganic nanomaterials are highlighted, which can be solution-processed and underscor the importance of solution-based processing, establishing it as a cornerstone strategy for scalable electronic and optoelectronic applications. A comprehensive exploration of the challenges and opportunities associated with the utilization of 2D materials for the next generation of thin-film electronics and optoelectronic devices is presented.

Atomically Thin Amorphous Indium-Oxide Semiconductor Film Developed Using a Solution Process for High-Performance Oxide Transistors.

High-performance oxide transistors have recently attracted significant attention for use in various electronic applications, such as displays, sensors, and back-end-of-line transistors. In this study, we demonstrate atomically thin indium-oxide (InOx) semiconductors using a solution process for high-performance thin-film transistors (TFTs). To achieve superior field-effect mobility and switching characteristics in TFTs, the bandgap and thickness of the InOx were tuned by controlling the InOx solution molarity. As a result, a high field-effect mobility and on/off-current ratio of 13.95 cm2 V-1 s-1 and 1.42 × 1010, respectively, were achieved using 3.12-nanometer-thick InOx. Our results showed that the charge transport of optimized InOx with a thickness of 3.12 nm is dominated by percolation conduction due to its low surface roughness and appropriate carrier concentration. Furthermore, the atomically thin InOx TFTs showed superior positive and negative gate bias stress stabilities, which are important in electronic applications. The proposed oxide TFTs could provide an effective means of the fabrication of scalable, high-throughput, and high-performance transistors for next-generation electronic applications.

Asymmetrically Functionalized Electron-Deficient π-Conjugated System for Printed Single-Crystalline Organic Electronics.

Large-area single-crystalline thin films of n-type organic semiconductors (OSCs) fabricated via solution-processed techniques are urgently demanded for high-end electronics. However, the lack of molecular designs that concomitantly offer excellent charge-carrier transport, solution-processability, and chemical/thermal robustness for n-type OSCs limits the understanding of fundamental charge-transport properties and impedes the realization of large-area electronics. The benzo[de]isoquinolino[1,8-gh]quinolinetetracarboxylic diimide (BQQDI) π-electron system with phenethyl substituents (PhC2 -BQQDI) demonstrates high electron mobility and robustness but its strong aggregation results in unsatisfactory solubility and solution-processability. In this work, an asymmetric molecular design approach is reported that harnesses the favorable charge transport of PhC2 -BQQDI, while introducing alkyl chains to improve the solubility and solution-processability. An effective synthetic strategy is developed to obtain the target asymmetric BQQDI (PhC2 -BQQDI-Cn ). Interestingly, linear alkyl chains of PhC2 -BQQDI-Cn (n = 5-7) exhibit an unusual molecular mimicry geometry with a gauche conformation and resilience to dynamic disorders. Asymmetric PhC2 -BQQDI-C5 demonstrates excellent electron mobility and centimeter-scale continuous single-crystalline thin films, which are two orders of magnitude larger than that of PhC2 -BQQDI, allowing for the investigation ofelectron transport anisotropy and applicable electronics.

A BRIEF REVIEW OF THE EFFECT OF PRECURSOR CONCENTRATIONS ON THE PHYSICAL CHARACTERISTICS OF LOW-COST KESTERITES FOR PHOTOVOLTAIC APPLICATIONS

In the ongoing few years, electricity cost is bound to increase so as a result, innovations in the photovoltaic industry are worth promising. One of the new ventures, kesterite (Cu2ZnSnS4) plays a significant role in fulfilling the energy demands due to its high earth abundance, non-toxicity, and low-cost processing characteristics. This semiconductor thin film can be considered as an alternative to CIGS where the expensive and scarce resources such as indium (In) and gallium (Ga) are replaced with cost-effective and abundant zinc (Zn) and tin (Sn). In this paper, the variations in the concentration of precursors of kesterite– copper, zinc, tin, and sulfur, and their influence on structural and optoelectrical characteristics of kesterite thin films have been reviewed and their effects are discussed.

Harnessing the tunability of intrinsic defects in isovalent Zn doped spray deposited CuO thin films

Doping is a versatile tool for tailoring the properties of semiconductor thin films. This article investigates the influence of isovalent dopant, Zinc (Zn), on the electronic, optical and structural characteristics of copper oxide (CuO) thin films prepared by spray pyrolysis technique. Structural characterization from XRD and Raman studies confirms the successful incorporation of Zn atoms into the CuO lattice without altering monoclinic structure of the films. The absence of secondary phases like Cu2O and ZnO confirms the good quality of the prepared films. A significant variation in the morphology of the films was observed in FESEM images. The EDS analysis confirmed the incorporation of Zn atoms in CuO films and showed that the prepared films are oxygen rich in nature. The band gap of the films increased from 1.50 eV in pristine samples to 1.62 eV in 8 at% Zn-doped sample. Different defect related emissions were observed in PL spectra with the resultant emission in yellowish green region as obtained from chromaticity diagram. XPS analysis confirmed that both Cu and Zn are found in +2 oxidation state. The electrical conductivity and carrier concentration of CuO films improved with doping due to the enhanced oxygen interstitial defects. The carrier density increased from 2.17 × 1014 to 2.82 × 1015 cm−3 after 6 at %doping with the lowest resistivity of 708 Ω cm. Hence, the properties of CuO films can be effectively modified by Zn doping. Zn doping improved the electrical properties of the films without trading off the excellent optical properties of CuO thin films making them suitable in solar cell absorber layer applications.

Fabrication of electro-conductive thin films of nanoparticles and MXene sheets using reclaimed Zn, Mn, and C from spent batteries

Farseeing sustainable consumption concept, major parts of zinc‑carbon battery i.e. zinc, manganese and central graphite rod were up cycled. Low temperature roasting technique was employed for the extraction of zinc and manganese. Optimization of multiple parameters was meticulously adjusted that resulted in the recovery of 99 % Zn and Mn. Respective nanoparticles were derived from leached solutions that were characterized through XRD, FESEM-EDX and further employed in fabrication of semi-conductive thin films via Layer by Layer technique. Central carbon rod of spent cells and recycled aluminum were incorporated for the synthesis of MAX phase composite followed by its conversion to MXene sheets. The MAX phase composites symbolized as MAX/Al2Ti-800 and MAX/Al2Ti-900 were successfully prepared at relatively lower temperatures i.e. 800 °C and 900 °C respectively. The prepared composites were further etched via MILD method for preparation of MXene800 and MXene900 derived from MAX/Al2Ti-800 and MAX/Al2Ti-900 and were characterized using XRD and SEM. Presence of Al2Ti within MXene800 made it quite stable against hydrolysis as depicted by Raman and UV–visible spectra. Electrical conductivity of MXene800 measured by resistance meter was 3.9 × 102 S/cm; moreover, MXene800 was tailored in free-standing thin films having architecture [CNER-MXene800@PVC] that showed significant thermal resistance as well as exhibit semi-conductive nature.

Lead-free metal halide (halogenidometallate) semiconductors for optoelectronic applications

The electronic age demands the development of high-performing thin-film semiconductors that are low-cost and scalable. Lead (Pb)-based halide perovskites (LHPs) have proven to be successful in this regard, but their use is limited by environmental and health concerns related to lead toxicity. Lead-free halide compounds offer a promising alternative, with vast compositional space for fine-tuning properties to meet specific application requirements. These materials also offer opportunities for the deliberate introduction of functional properties, providing unparalleled control over their targeted applications. While the call for lead-free halide materials as alternatives to LHPs is echoed several times, the performance of these compounds remains modest as compared to the exponential growth of LHPs. Nevertheless, the compositional space of lead-free halide materials is huge, even bigger than LHPs as they are not restricted by the structural constrains of perovskite structure. This brings their huge potential in future technologies, which are remains untapped as of now. As a meta-analysis, we compare and combine the findings of previously published studies, to assess the optoelectronic properties of ternary and quaternary halide materials and their applications in devices. It details the structures of the various lead-free halide materials including perovskites, perovskite-derivative, and non-perovskites structures and describes the role of dimensionality and composition on their optoelectronic properties. To end, the challenges and perspectives of lead-free materials and devices are given. We hope this review will provide new insights for designing metal halide materials from the viewpoint of the modulation of the basic building blocks metal halide coordination. The future of electronics lies in the hands of lead-free halide materials, and we hope this review will inspire further research in this field.

(Invited) Structural and Dynamics Analysis of Organic Semiconducting Materials by Solid State NMR

Recently, our group have successfully developed several blue and green thermally activated delayed fluorescence (TADF) emitters showing high external quantum efficiencies in OLEDs through high-throughput screening based on quantum chemical calculations. Although the conformation, aggregated structure and dynamics of TADF emitters in amorphous states is expected to be the origin of reverse intersystem crossing and resulting high device performance, the experimental approach toward these information is still limited because typical diffraction technique cannot be used to amorphous materials due to the lack of long-range order. Thus we have carried out multiscale simulations and solid-state NMR (ssNMR) analysis of organic amorphous thin films. The ssNMR is one of the powerful technique to obtain the structural and dynamics information of amorphous aggregated materials. In this presentation, we demonstrate structural and dynamics analysis of amorphous organic semiconducting materials using ssNMR.Reference(1) “Analysis of Molecular Orientation in Organic Semiconducting Thin Films Using Static Dynamic Nuclear Polarization Enhanced Solid-State NMR Spectroscopy”, Suzuki, K.; Kubo, S.; Aussenac, F.; Engelke, F.; Fukushima, T.; Kaji, H. Angew. Chem. Int. Ed. 2017, 56, 14842.(2) “Efficient blue thermally activated delayed fluorescence emitters showing very fast reverse intersystem crossing”, Ren, Y., Wada, Y., Suzuki, K., Kusakabe, Y., Geldsetzer, J. and Kaji, H. Appl. Phys. Express, 2021, 14, 071003.(3) “Solution-processable thermally activated delayed fluorescence emitters for application in organic light emitting diodes”, Suzuki, K.; Adachi, C.; Kaji, H. J. Soc. Inf. Disp. 2017, 25, 480.(4) “Imidazole Acceptor for Both Vacuum-Processable and Solution-Processable Efficient Blue Thermally Activated Delayed Fluorescence”, Kusakabe, Y.; Wada, Y.; Misono, T.; Suzuki, K.; Shizu, K.; Kaji, H ACS Omega, 7, 16740 - 16745 (2022).(5) “Triarylboron-based Fluorescent Organic Light-emitting Diodes with External Quantum Efficiencies Exceeding 20%”, Suzuki, K.; Kubo, S.; Shizu, K.; Fukushima, T.; Wakamiya, A.; Murata, Y.; Adachi, C.; Kaji, H.; Angew. Chem. Int. Ed. 2015, 54, 15231.(5) “Purely organic electroluminescent material realizing 100% conversion from electricity to light”, Kaji, H.; Suzuki, H.; Fukushima, T.; Shizu, K.; Suzuki, K.; Kubo, S.; Komino, T.; Oiwa, H.; Suzuki, F.; Wakamiya, A.; Murata, Y.; Adachi, C. Nat. Commun. 2015, 6, 8476.

Increasing the Accuracy of the Characterization of a Thin Semiconductor or Dielectric Film on a Substrate from Only One Quasi-Normal Incidence UV/Vis/NIR Reflectance Spectrum of the Sample.

OEMT is an existing optimizing envelope method for thin-film characterization that uses only one transmittance spectrum, T(λ), of the film deposited on the substrate. OEMT computes the optimized values of the average thickness, d¯, and the thickness non-uniformity, Δd, employing variables for the external smoothing of T(λ), the slit width correction, and the optimized wavelength intervals for the computation of d¯ and Δd, and taking into account both the finite size and absorption of the substrate. Our group had achieved record low relative errors, <0.1%, in d¯ of thin semiconductor films via OEMT, whereas the high accuracy of d¯ and Δd allow for the accurate computation of the complex refractive index, N˙(λ), of the film. In this paper is a proposed envelope method, named OEMR, for the characterization of thin dielectric or semiconductor films using only one quasi-normal incidence UV/Vis/NIR reflectance spectrum, R(λ), of the film on the substrate. The features of OEMR are similar to the described above features of OEMT. OEMR and several popular dispersion models are employed for the characterization of two a-Si films, only from R(λ), with computed d¯ = 674.3 nm and Δd = 11.5 nm for the thinner film. It is demonstrated that the most accurate characterizations of these films over the measured spectrum are based on OEMR.

Description of electron mobilities in epitaxial lanthanum-doped barium stannate films: Influences of LO phonons, threading dislocation, and ionized donor defects

Lanthanum-doped barium stannate (La-doped BaSnO3 or LBSO) has attracted the attention of researchers and engineers because of its wide range of potential applications in electronic and optoelectronic devices. This is due to a combination of its exceptional room temperature (RT) mobility of 320 cm2 V−1 s−1 and high visible range transparency. However, epitaxial LBSO films made using strategic deposition techniques such as molecular beam epitaxy, pulsed laser deposition, and magnetron sputtering show comparatively low RT mobilities, between 24 and 183 cm2 V−1 s−1, and an accurate description of these RT mobilities is still sought. Herein, we provide the underlying scattering mechanisms related to longitudinal optical (LO) phonons, threading dislocation, and ionized donor defects to elucidate the RT mobilities in LBSO epitaxial films. It was found that the total mobility estimated using Matthiessen's rule provided strong quantitative agreement with experimental results. The large polaron mobility based on LO phonon scattering dominated the whole spectrum of electron concentrations in this system. It was an upper bound mobility, i.e., the mobility limit attained at 320 cm2 V−1 s−1. The calculated mobility associated with LO phonon and threading dislocation scatterings adequately verified the experimental results between 150 and 183 cm2 V−1 s−1. The predicted results for all three scattering types were predominant in experimental data at less than 150 cm2 V−1 s−1. These investigations deepen our understanding of mechanisms governing the charge transport scattering in epitaxial LBSO films and pave the way for the development of novel semiconductor thin films for use in electronic and optoelectronic devices.