Spray pyrolyzed lead oxide films for Schottky junction solar cells

Abstract

In this paper, we report the fabrication of Schottky solar cell based on spray pyrolysed lead oxide semiconductor thin films. The non-linear junction were created by using high work function metal alloy of Au–Pd with hydrogen treated undoped and Indium doped lead oxide films. The output of Schottky device with different thickness of absorber layer is presented. The electrical parameters of the device are ascertained from the I–V measurements. The device with 2 μm thickness of absorber layer gives a Voc value of 148 mV and Jsc value of 0.21 mA/cm2. The high ideality factor obtained for all varying thickness is attributed to both the surface states generated under illumination and non-homogeneous interface due to the rough surfaces of spray pyrolysed films. In case of Indium doped lead oxide films, an enhanced Voc value of 570 mV and Jsc of 0.11 mA/cm2 is observed. The pristine films and doped films have been characterized by X-Ray diffraction, Raman spectroscopy and scanning electron microscopy.