Thin Film Solar Cells Research Articles

Highly conductive and transparent metal microfiber networks as front electrodes of flexible thin-film photovoltaics

Simultaneously enhancing the optical transmittance and electrical conductivity of transparent conductors (TCs) applicable in various optoelectronic devices is a long-standing challenge. Herein, we present an innovative approach for fabricating electroplated Ni and Cu microfiber networks (NiMF and CuMF) as highly conductive TCs to realize high efficiency and desired aesthetics in thin-film solar cells and modules. The metal microfibers (MFs) are fabricated using electrospun polyacrylonitrile nanofibers as the template. The large cross-sectional aspect ratio of the metal MF networks remarkably and concurrently improves their electrical conductivity and optical transmittance. Between the NiMF and CuMF TCs, the CuMF sample exhibits a superior figure of merit owing to its exceptionally low electrical resistivity. The metal MF TC is a promising alternative to conventional patterned grids used in flexible Cu(In,Ga)Se2 thin-film solar cells, because it effectively reduces the series resistance, which is advantageous for large-area cells. The CuMF can be successfully employed as a ribbon to maintain the solar cell performance in centimeter-scale cells connected in series. The outstanding performance of the metal MF TCs indicates their potential to eliminate complicated monolithic integration processes or front grids and ribbons in flexible thin-film solar cells and modules.

C-Slot Circular Polarized Antenna for Hybrid Energy Harvesting and Wireless Sensing

This paper presents a new hybrid energy harvesting on electromagnetic solar for wireless energy harvesting of ambient from sensors of low-power devices. The axial ratio (AR) requirements produce Left-Hand Circular Polarization (LHCP) and Right-Hand Circular Polarization (RHCP) and simultaneously produce a 90-degree phase difference during energy harvesting, adopting a new design in designing a dual-feed broadband circular polarized (CP) antenna. To get the frequency band 2.3–2.4 GHz, we propose a C-Slot antenna with a circular patch dual feed. To estimate the diversity of the phase and magnitude output of the feed configuration under AR value, we used a 50 Ohm feed network output of the characteristic analysis for a dual feed CP antenna. An Axial ratio frequency range of less than 3 dB is achieved using polarization analysis with different branch channel couplers. To produce a DC output voltage, a high-frequency rectifier circuit embedded with a thin-film solar cell on the antenna is then connected to two T-junction power divider rectifiers, resulting in a high-efficiency design. A complete system-level analysis will include multiple signal classification methods of powered ambient RF energy using a wireless energy harvesting array that proposes a compact structure and demonstrates optimal configuration. Reliable operation in typical indoor environments indicates a self-contained sensor Node. Therefore, it has significant implications for powering small electronics and wireless sensor applications independently of the IoT Network or real implementation telecommunications industry.

Efficiency enhancement of ultrathin CIGS solar cells by optimal bandgap grading. Part III: piecewise-homogeneous grading

In Parts I [ Appl. Opt. 58, 6067 (2019)APOPAI0003-693510.1364/AO.58.006067] and II [ Appl. Opt. 61, 10049 (2022)APOPAI0003-693510.1364/AO.474920], we used a coupled optoelectronic model to optimize a thin-film CIGS solar cell with a graded-bandgap photon-absorbing layer, periodically corrugated backreflector, and multilayered antireflection coatings. Bandgap grading of the CIGS photon-absorbing layer was continuous and either linear or nonlinear, in the thickness direction. Periodic corrugation and multilayered antireflection coatings were found to engender slight improvements in the efficiency. In contrast, bandgap grading of the CIGS photon-absorbing layer leads to significant enhancement of efficiency, especially when the grading is continuous and nonlinear. However, practical implementation of continuous nonlinear grading is challenging compared to piecewise-homogeneous grading. Hence, for this study, we investigated piecewise-homogeneous approximations of the optimal linear and nonlinear grading profiles, and found that an equivalent efficiency is achieved using piecewise-homogeneous grading. An efficiency of 30.15% is predicted with a three-layered piecewise-homogeneous CIGS photon-absorbing layer. The results will help experimentalists to implement optimal designs for highly efficient CIGS thin-film solar cells.

Numerical investigation of CuSbS2 thin film solar cell using SCAPS-1D: enhancement of efficiency on experimental films by defect studies

The study of photovoltaic solar cells has been an exciting field of research because of their environmentally friendly nature. Scientists are continuously searching for new methods to develop solar cells that are highly efficient and cost-effective. One promising option is the use of Copper Antimony Sulphide (CuSbS2) based ternary compound semiconductor in ultrathin film photovoltaic cells. This material has a high absorption coefficient, low cost, and is readily available in the earth’s crust. These characteristics make it an ideal candidate for use as a thin-film absorber layer in solar cells. In this work, FTO/CdS/In2S3/CuSbS2/Spiro-OMeTAD/Au device is proposed to improve the efficiency of experimentally designed CuSbS2-based thin film solar cells using numerical modeling. Device simulation was carried out using SCAPS-1D software, and the illumination spectrum used for this optimization was 1.5 AM. The simulated results from SCAPS-1D were compared to the experimental data. After optimizing the device parameters all the electrical parameters of the solar cell were improved. The optimized CuSbS2-based device shows power conversion efficiency (PCE) of 21.11% with short circuit current density (Jsc) of 20.96 mA cm−2, open circuit voltage (Voc) of 1.23 V, and fill factor (FF) of 81.84%. Based on the simulation results, it is possible to increase the performance of the device by varying different parameters such as the defect density of each layer, interfacial defect density, thickness, and doping concentration.

Light absorption enhancement in dye-sensitized solar cells using thin nanostructured photoelectrodes

As thin-film solar cells are the attraction of many research works nowadays, dye-sensitized solar cells (DSSCs) among other types hold the promise of excellent cost/performance ratio because of the relatively low material costs and simple processing conditions. In order to improve its relatively low performance, different approaches are being explored to enhance the photon-to-current conversion efficiency. Notably, one of the most accessible approaches is by modifying the optical characteristics of the photoelectrode of DSSCs to improve light trapping within the cell. Here, we introduce a cost-effective nanopatterning process done on the photo-active TiO2 photoelectrode layer for better light absorption. This simple technique resulted in increased cell short-circuit current density (from 4.664 to 5.963 mA/cm2) which consequently enhanced cell efficiency (from 2.243 to 2.819%). Furthermore, without compromising the absorption significantly, nanopatterned photoelectrodes with a smaller thickness can lead to reduced material costs and possibly allowing the construction of semitransparent cells. This work can contribute to an attainable efficient DSSC manufacturing route for practical applications.

Modular slot-die coater for in situ grazing-incidence x-ray scattering experiments on thin films.

Multimodal in situ experiments during slot-die coating of thin films pioneer the way to kinetic studies on thin-film formation. They establish a powerful tool to understand and optimize the formation and properties of thin-film devices, e.g., solar cells, sensors, or LED films. Thin-film research benefits from time-resolved grazing-incidence wide- and small-angle x-ray scattering (GIWAXS/GISAXS) with a sub-second resolution to reveal the evolution of crystal structure, texture, and morphology during the deposition process. Simultaneously investigating optical properties by in situ photoluminescence measurements complements in-depth kinetic studies focusing on a comprehensive understanding of the triangular interdependency of processing, structure, and function for a roll-to-roll compatible, scalable thin-film deposition process. Here, we introduce a modular slot-die coater specially designed for in situ GIWAXS/GISAXS measurements and applicable to various ink systems. With a design for quick assembly, the slot-die coater permits the reproducible and comparable fabrication of thin films in the lab and at the synchrotron using the very same hardware components, as demonstrated in this work by experiments performed at Deutsches Elektronen-Synchrotron (DESY). Simultaneous to GIWAXS/GISAXS, photoluminescence measurements probe optoelectronic properties in situ during thin-film formation. An environmental chamber allows to control the atmosphere inside the coater. Modular construction and lightweight design make the coater mobile, easy to transport, quickly extendable, and adaptable to new beamline environments.

Analysis of CdS/CdTe Thin Film Solar Cells as a Function of CdS Doping Concentration: A Numerical Simulation Perspective

Cadmium Telluride (CdTe) photovoltaics, incorporating a thin film of Cadmium Sulfide (CdS), present a costeffective yet less efficient solar cell technology. Improving CdS/CdTe solar cell efficiency involves optimizing parameters like doping concentration and CdS layer thickness. However, limited research on cell defects necessitates a comprehensive analysis, including the often-overlooked impact of temperature. This study aims to analyze defect-free and defective CdS/CdTe solar cells, exploring the effects of doping concentration and other parameters. Using the SCAPS-1D simulator, design parameter variations will be investigated, and key metrics— open-circuit voltage (Voc), short-circuit current density (Jsc), fill factor (FF), and efficiency (η)—will be extracted. Simulation results indicate minimal efficiency impact from increased doping concentration in the ntype CdS layer for defect-free devices. The optimal doping concentration for CdS is 5 × 10<sup>18</sup> cm<sup>-3</sup>, with an optimum electron affinity of 4.0 eV. CdS thickness shows no significant efficiency impact, with the chosen optimum at 10 nm. In the defect-free CdS/CdTe solar cell, key metrics were Voc: 1.06 V, Jsc: 24.60 mA cm<sup>-2<sup>, FF: 87.89%, and η: 23.01%. Analysis of defects revealed single acceptor defects significantly impacting solar cell performance in both interfacial and bulk defects. Defect structure simulations demonstrated that increasing doping concentration, decreasing electron affinity, and thickness enhance efficiency. New optimum values for these parameters—1 × 10<sup>18</sup> cm<sup>-3</sup>, 4.0 eV, and 10 nm—yielded Voc: 1.03 V, Jsc: 23.88 mA cm<sup>-2</sup>, FF: 87.15%, and η: 21.40%. Additionally, a temperature decrease was associated with increased efficiency.

Regulating the crystal orientation of vapor-transport-deposited GeSe thin films by a post-annealing treatment

Recently, GeSe has emerged as a highly promising photovoltaic absorber material due to its excellent optoelectronic properties, nontoxicity, and high stability. Although many advantages make GeSe well suited for thin-film solar cells, the power conversion efficiency of the GeSe thin-film solar cell is still much below the theoretical maximum efficiency. One of the challenges lies in controlling the crystal orientation of GeSe to enhance solar cell performance. The two-step preparation of GeSe thin films has not yet been reported to grow along the [111] orientation. In this work, we study the effect of a post-annealing treatment on the GeSe thin films and the performance of the solar cells. It was found that amorphous GeSe films can be converted into polycrystalline films with different orientations by changing the post-annealing temperature. [111]-oriented and [100]-oriented GeSe thin films were successfully prepared on the same substrate by optimizing the annealing conditions. With the structure of Au/GeSe/CdS/ITO cell devices, PCEs of 0.14% and 0.16% were ultimately achieved.

Autonomous self-healing hybrid energy harvester based on the combination of triboelectric nanogenerator and quantum dot solar cell

Realization of multi-source energy harvesting with one single device would maximize power output. Thus, it is emerging as a promising strategy towards renewable energy generation and has attracted worldwide attention in the past decades. Capable of capturing mechanical energy that is ubiquitous in the ambient environment, triboelectric nanogenerator (TENG) has been considered a novel yet effective source towards next-generation energy harvesting. In this work, a flexible hybrid energy harvester (HEH) is developed via the rational integration of autonomous self-healing TENG and high bending-stable lead sulfide quantum dot (PbS QD) solar cell, enabling independent electricity generation by two different mechanisms. The single-electrode mode TENG component with self-healing is realized by a polydimethylsiloxane/Triton X-100 (PDMS/TX100) mixture as the dielectric layer and the shared gold (Au) electrode, which generates 0.39 µA of output current (Iout), 24.6 V of output voltages (Vout), 15.4 nC of transfer charges (Qsc), and 7.80 mW m−2 of output power peak density. The thin-film solar cell component is based on a PbS QD layer as the light absorber with a planar structure fabricated under low-cost and compatible conditions, achieving 22.8 mA cm−2 of short-circuit current density (Jsc) and 4.92% of power conversion efficiency (PCE). As a proof of concept, an electronic watch is successfully powered by harnessing ambient mechanical and solar energy with a hybridized energy cell. This approach will offer more opportunities to construct a versatile platform towards remote monitoring and smart home systems.

Enhancing the properties of Cd-free MgZnS buffer for solar cells by co-sputtering ZnS and Mg targets

The buffer is an essential component that connects the window and absorber layers in thin film solar cells, which has significant impacts on the performance of cell device. CdS is widely used buffer material, but it has drawbacks of toxicity and narrow band gap of 2.4 eV. This work explores the fabrication of a novel Cd-free MgZnS buffer layer through co-sputtering ZnS and Mg targets. The grain size, morphology, phase composition, transmittance and band gap of MgZnS films are manipulated by adjusting the substrate temperature, sputtering power of ZnS target and sputtering current of Mg target. The MgZnS film exhibits remarkable characteristics, including high crystallinity with grain size of about 35 nm, high transmittance of over 80%, and high band gap of 3.44 eV. The process parameters with favorable outcomes include substrate temperature of 300 °C, ZnS sputtering power of 100 W, and Mg sputtering current of 0.05 A. Furthermore, compared with the CdS buffer, the MgZnS buffer has better compactness and transmittance. This method provides a promising new and effective avenue to fabricate Cd-free buffers for solar cells.

Recent Progress and Challenges in Controlling Secondary Phases in Kesterite CZT(S/Se) Thin Films: A Critical Review

Kesterite-based copper zinc tin sulfide (CZTS) and copper zinc tin selenide (CZTSe) thin films have attracted considerable attention as promising materials for sustainable and cost-effective thin-film solar cells. However, the successful integration of these materials into photovoltaic devices is hindered by the coexistence of secondary phases, which can significantly affect device performance and stability. This review article provides a comprehensive overview of recent progress and challenges in controlling secondary phases in kesterite CZTS and CZTSe thin films. Drawing from relevant studies, we discuss state-of-the-art strategies and techniques employed to mitigate the formation of secondary phases. These include a range of deposition methods, such as electrodeposition, sol-gel, spray pyrolysis, evaporation, pulsed laser deposition, and sputtering, each presenting distinct benefits in enhancing phase purity. This study highlights the importance of employing various characterization techniques, such as X-ray diffraction, Raman spectroscopy, scanning electron microscopy, and energy-dispersive X-ray spectroscopy, for the precise identification of secondary phases in CZTS and CZTSe thin films. Furthermore, the review discusses innovative strategies and techniques aimed at mitigating the occurrence of secondary phases, including process optimization, compositional tuning, and post-deposition treatments. These approaches offer promising avenues for enhancing the purity and performance of kesterite-based thin-film solar cells. Challenges and open questions in this field are addressed, and potential future research directions are proposed. By comprehensively analyzing recent advancements, this review contributes to a deeper understanding of secondary phase-related issues in kesterite CZT(S/Se) thin films, paving the way for enhanced performance and commercial viability of thin-film solar cell technologies.

Modeling the current-voltage characteristics of Sb2Se3 thin film solar cells through Sah-Noyce-Shockley recombination model

This study investigates the impact of various material parameters, such as film resistivity, the thickness of the absorber layer, uncompensated acceptor density, and carrier lifetime, on the carrier transport and device characteristics of emerging CdS/Sb2Se3 thin-film solar cells. The modeling approach is based on the rigorous Sah-Noyce-Shockley recombination model at the PN-junction, which is based on drift and diffusion collection efficiencies for total current-density calculations. The current-density and voltage have been optimized against the Sb2Se3 thickness and the depletion width at the CdS/Sb2Se3 junction. It has been determined that the lower efficiency of the cell is primarily due to the relatively short electron lifetime and the uncompensated acceptor density, which can widen or narrow the depletion width. The resistivity of the Sb2Se3 film can effectively control the voltage of the cell, however, the carrier lifetime can control this impact even to a higher extent. Therefore, the carrier lifetime and uncompensated acceptor densities are the two interdependent parameters that significantly control the current, voltage, and efficiency of the Sb2Se3 solar cells. This research provides valuable insights for the design and optimization of Sb2Se3 thin-film solar cells shedding light on carrier transport and charge collection mechanism in these emerging materials.

Microwave-synthesized aluminum, gallium and indium-substituted stannite nanocrystal absorbers for solar cell applications

A novel family of Cu2FeXS4-x (X = Sn, Al, Ga & In) semiconductors with tetragonal stannite crystal structurehave been designed by a simple microwave assisted method. The impact of microwave power on the morphological, structural,spectroscopic and electrochemical properties were investigated. X-ray Diffraction (XRD) clearly revealed that the complete substitution of Sn (0.69 Å) with Al (0.54 Å), Ga (0.62 Å) and In (0.80 Å) did not affect the tetragonal arrangement of the stannite crystal structure except for a slight peak shift. High resonance scanning and transmission electron microscopy (HRSEM and HRTEM) revealed nano bullets, hexagonal prism, triangular nanoplates and spherical morphology with nanocrystal sizes ranging from 8 to 13 nm for CFXS nanocrystals. The UV–visible spectroscopy shows strong light absorption in the whole visible range with band gaps of between 1.2 and 1.6 eV suggesting its potential application as an absorber in thin film solar cells. Doctor blading method was used to coat CFXS nanocrystal inks on CdS coated ZnO nanorod arrays to fabricate a superstrate solar cell devices with the architecture ITO/ZnONRs/CdS/CFXS/Ag. The solar cell devices fabricated with copper iron tin sulfide (CFTS), copper iron aluminium sulfide (CFAS), copper iron gallium sulfide (CFGS) and copper iron indium sulfide (CFIS) absorbers displayed a power conversion efficiency (PCE) of 0.21%, 0.15%, 0.58% and 0.41% respectively. The photovoltaic response exhibited by the novel materials is quite positive and this shows that they can in fact be utilized to design solar cells with strong photovoltaic properties.

Fabrication of phase-pure and large-grained Cu3BiS3 films by a two-stage process for thin film solar cells

Copper-bismuth-sulfide (Cu3BiS3) has gained great interest as solar cell absorber owing to the advantages of being cheap, abundant, and non-toxic. Fabrication of phase-pure and large-grain absorbers are desirable for their integration in solar cells. Herein, we have used a sequential evaporation and chalcogenization (350–450 oC) process to fabricate phase-pure and large-grain Cu3BiS3 films. X-ray diffraction indicated a CuS secondary phase at 350 °C and single-phase Cu3BiS3 at 400 and 450 °C in the sulfurized films. Elemental analysis revealed a near-stoichiometric Cu3BiS3 composition for all the films. X-ray photoelectron spectroscopy was used to assess the valence states of elements. Microstructural analysis confirmed the formation of compact and large-grained Cu3BiS3 films with an average grain size of 5 μm at 350 °C. The grain size decreased with increasing sulfurization temperature (400–450 °C). The direct bandgap decreases from 1.42 eV to 1.32 eV with increasing sulfurization temperature from 350 to 450 °C. Hall measurements indicated decreased electrical resistivity and increased hole mobility and carrier concentration with increasing the sulfurization temperature. From this study, the Cu3BiS3 absorbers produced at 400 oC exhibited superior phase purity and good quality suitable for the solar cells.

Ultra-Thin GaAs Single-Junction Solar Cells for Self-Powered Skin-Compatible Electrocardiogram Sensors.

GaAs thin-film solar cells have high efficiency, reliability, and operational stability, making them a promising solution for self-powered skin-conformal biosensors. However, inherent device thickness limits suitability for such applications, making them uncomfortable and unreliable in flexural environments. Therefore, reducing the flexural rigidity becomes crucial for integration with skin-compatible electronic devices. Herein, this study demonstrated a novel one-step surface modification bonding methodology, allowing a streamlined transfer process of ultra-thin (2.3µm thick) GaAs solar cells on flexible polymer substrates. This reproducible technique enables strong bonding between dissimilar materials (GaAs-polydimethylsiloxane, PDMS) without high external pressures and temperatures. The fabricated solar cell showed exceptional performance with an open-circuit voltage of 1.018V, short-circuit current density of 20.641mAcm-2, fill factor of 79.83%, and power conversion efficiency of 16.77%. To prove the concept, the solar cell is integrated with a skin-compatible organic electrochemical transistor (OECT). Competitive electrical outputs of GaAs solar cells enabled high current levels of OECT under subtle light intensities lower than 50mWcm-2, which demonstrates a self-powered electrocardiogram sensor with low noise (signal-to-noise ratio of 32.68dB). Overall, this study presents a promising solution for the development of free-form and comfortable device structures that can continuously power wearable devices and biosensors.

Influence of Mg concentration in Zn1-xMgxO buffer layers for enhanced Cu2(Sn,Ge)S3 solar cells performance

This study is focused on the influence of band alignment at the buffer/absorber interface of Cu2(Sn,Ge)S3 (CTGS) thin film solar cells fabricated on soda-lime glass substrates with an Al/Ni/Zn0.92Mg0.08O:Al/Zn1-xMgxO − 2nd buffer/CdS − 1st buffer/CTGS/Mo/glass structure. Here, Zn1-xMgxO 2nd buffers are used to minimize the energy losses and prevent direct contact between the Zn0.92Mg0.08O:Al and CTGS absorber. The study found that the conduction band offset between Zn1-xMgxO and CTGS changed from −0.68 eV (i.e., cliff-like, negative band offset) to +0.60 eV (i.e., spike-like, positive band offset) as the Mg content x increased in Zn1-xMgxO from 0 (i.e., pure ZnO) to 0.52. Optimization of the conduction band offset via tuning the Mg content in Zn1-xMgxO 2nd buffer reduced carrier recombination in the CTGS devices, improving band bending and enhancing the power conversion efficiency up to 3.1%. This was primarily attributed to an increase in short-circuit current density and fill factor.

Facile Approach for Metallic Precursor Engineering for Efficient Kesterite Thin-Film Solar Cells.

Kesterite-based Cu2ZnSn(S,Se)4 (CZTSSe) thin-film solar cells (TFSCs) are a promising candidate for low-cost, clean energy production owing to their environmental friendliness and the earth-abundant nature of their constituents. However, the advancement of kesterite TFSCs has been impeded by abundant defects and poor microstructure, limiting their performance potential. In this study, we present efficient Ag-alloyed CZTSSe TFSCs enabled by a facile metallic precursor engineering approach. The positioning of the Ag nanolayer in the metallic stacked precursor proves crucial in expediting the formation of Cu-Sn metal alloys during the alloying process. Specifically, Ag-included metallic precursors promote the growth of larger grains and a denser microstructure in CZTSSe thin films compared to those without Ag. Moreover, the improved uniformity of Ag, facilitated by the evaporation deposition technique, significantly suppresses the formation of detrimental defects and related defect clusters. This suppression effectively reduces nonradiative recombination, resulting in enhanced performance in kesterite TFSCs. This study not only introduces a metallic precursor engineering strategy for efficient kesterite-based TFSCs but also accelerates the development of microstructure evolution from metallic stacked precursors to metal chalcogenide compounds.

Effect of annealing temperature on bismuth vanadate nano thin films for solar cell applications

Bismuth vanadate (BiVO4) has been used as the photoanode electrodes in ferroelectric solar cells owing to its unique combination of properties: a narrow bandgap among ferroelectrics, economic viability, negative conduction band edge, and remarkable stability. The present work explores the fabrication and characterization of BiVO4 thin films prepared via spin coating, with a specific focus on elucidating the influence of the annealing temperature (400–550 °C) on their structural, optical, and photovoltaic properties. From X-ray diffraction (XRD) analysis, it is observed that higher annealing temperatures have promoted the formation of larger grains, enhanced crystallinity, and induced a preferred crystal orientation characteristic of the monoclinic scheelite structure. Tauc plot analysis shows the dependence of the optical band gap on the annealing temperature for BiVO4 thin films. The band gap values have decreased slightly from 2.50 eV at 400 °C to 2.44 eV at 550 °C. This is indicated by the slightly narrowed bandgap, which influences the structure of the material or defect states at higher annealing temperatures. A narrower bandgap allows for the absorption of lower-energy light, potentially improving the light absorption efficiency of BiVO4 thin films in photoanode applications. The influence of annealing temperature on BiVO₄ thin film solar cell performance was investigated further through the analysis of open-circuit voltage (Voc), short-circuit current (Isc) and power conversion efficiency.

ZnxCd1–xSySe1–y as an effective electron transport layer for improving the efficiency of Sb2S3 and Sb2Se3 thin-film solar cells

ZnxCd1–xSySe1–y as an effective electron transport layer for improving the efficiency of Sb2S3 and Sb2Se3 thin-film solar cells

Photonic crystal and Ti nanoparticles enhanced high-absorption GaAs thin-film solar cell

The research aims to investigate the application of photonic crystals and metal nanoparticles in the design of thin-film solar cell (TFSC). The propagation of electromagnetic waves in the vicinity of the cell and the light absorption process were simulated to analyze the performance variations of GaAs TFSC combining GaAs photonic crystals and Ti nanoparticles. By optimizing the cell model structure and doping concentration, we achieved high absorption across a broader wavelength spectrum. The research indicates that the incorporation of photonic crystals effectively extends the optical path length within the solar cell, while the integration of metal nanoparticles further enhances the cell's light absorption efficiency. Ultimately, the cell model proposed in this article achieves efficient light absorption in the wavelength range of 400–860 nm, with the absorption rates of the cell consistently exceeding 90% across all spectral bands. And nearly perfect absorption is realized in the wavelength range of 728–860 nm. Simultaneously, the performance of the cell exhibits significant improvements, culminating in a photoelectric conversion efficiency (PCE) of 34.48%. This research provides useful guidance for the development of solar cell technology and makes a positive contribution to the sustainable utilization of clean energy.