Thickness Of Thin Films Research Articles

A study on the fabrication procedure for a high-D/Ti-ratio-deuterated-titanium film on the disk-type neutron generator target

This study aims to present thin film deposition and deuterium adsorption procedure to fabricate disk-type targets with high D/Ti values for a neutron generator and increase their lifespan. The neutron target consists of a titanium thin film with hydrogen loading, and a copper substrate for heat removal. We optimized the incident deuterium ion beam energy and thin film thickness using Geant4 simulations. Additionally, we calculated the expected neutron yield under the optimized conditions. The hydrogen adsorption conditions were optimized by comparing the H/Ti results as per hydrogen adsorption temperature and loading time using titanium foils of different thickness values. Hydrogen (or deuterium) adsorption ratio is strongly influenced by the surface condition and the deposition conditions of the thin film. A titanium film was deposited in various conditions of plasma DC power and substrate temperature. The quality of the thin film was evaluated through surface roughness evaluation and thin film sheet resistance for each deposition conditions. Subsequently, the hydrogen adsorption results were compared according to the quality of the thin titanium films, and the thin titanium film deposition conditions with the highest hydrogen adsorption ratio were confirmed. The selected conditions were applied to conduct deuterium adsorption. In conclusion, this study underscores the critical relationship between thin film quality and hydrogen (or deuterium) adsorption ratio, reinforcing the importance of optimizing thin film deposition parameters for the design of neutron generator disk-type targets with high quality of film and extended lifespan.

Investigation of Nondestructive and Noncontact Electrical Characterization of GaN Thin Film on ScAlMgO4 Substrate Using Terahertz Time‐Domain Spectroscopic Ellipsometry with Characteristic Impedance Analytical Model

Semiconductor evaluation methods frequently require sample processing and carry the risk of defects and property changes. Therefore, nondestructive and noncontact electrical property measurement techniques are necessary. Terahertz time‐domain spectroscopic ellipsometry (THz‐TDSE) can simultaneously estimate the electrical properties and film thickness of a sample. However, whether this method can simultaneously determine electrical properties and film thickness for semiconductor thin films of 1 μm or less remains unclear. This study uses THz‐TDSE to evaluate the electrical properties and film thickness of a GaN thin film (≈0.8 μm thick) on a ScAlMgO4 substrate. Using the conventional analysis based on Fresnel's formula (FR model), which is used in the field of optics, uniquely determining the electrical properties and film thickness is not possible owing to multiple optimal solutions. Therefore, a model combining the characteristic impedance model used in the radio‐wave region with the FR model is employed in the analysis. The obtained values of electrical properties of the GaN thin film evaluated using THz‐TDSE are consistent with those using Hall effect measurement. Moreover, the film thickness is consistent with that measured from the cross‐sectional transmission electron microscopy observation.

Super-resolution spectral interference fitting method for the simultaneous measurement of the thin film thickness and surface profile

Conventional spectral interferometry cannot measure film thicknesses less than optical resolution. However, none of the existing super-resolution methods can obtain the film thickness distribution and surface profile in a single measurement, which will seriously reduce the measurement efficiency and accuracy. We propose a fitting method for Linnik-type spectral interferometry to solve these problems. Compared to the traditional reflectance spectral model for thin films, a new spectral interferometric model is developed for measurements. The results obtained from this method were compared with those from ellipsometry and stylus profilometry, respectively. We confirmed the results matched each other well and proved the validity of the solution.

Metasurface array for single-shot spectroscopic ellipsometry

Spectroscopic ellipsometry is a potent method that is widely adopted for the measurement of thin film thickness and refractive index. Most conventional ellipsometers utilize mechanically rotating polarizers and grating-based spectrometers for spectropolarimetric detection. Here, we demonstrated a compact metasurface array-based spectroscopic ellipsometry system that allows single-shot spectropolarimetric detection and accurate determination of thin film properties without any mechanical movement. The silicon-based metasurface array with a highly anisotropic and diverse spectral response is combined with iterative optimization to reconstruct the full Stokes polarization spectrum of the light reflected by the thin film with high fidelity. Subsequently, the film thickness and refractive index can be determined by fitting the measurement results to a proper material model with high accuracy. Our approach opens up a new pathway towards a compact and robust spectroscopic ellipsometry system for the high throughput measurement of thin film properties.

Characterization of CdS/CdTe Ultrathin-Film Solar Cells with Different CdS Thin-Film Thicknesses Obtained by RF Sputtering

The development of semitransparent CdS/CdTe ultrathin solar cells has been delayed as a result of the activation annealing to which the device must be subjected, which may involve problems such as the sublimation of ultrathin films and the diffusion of Cd and S at the interface. In this work, CdS/CdTe ultrathin devices on soda-lime glass/SnO2:F/ZnO substrates were obtained by RF magnetron sputtering. CdS/CdTe ultrathin heterostructures were obtained with the following thicknesses for the CdS thin film: 70, 110, and 135 nm. The CdTe thickness film was kept constant at 620 nm. Subsequently, activation annealing with CdCl2 was carried out at 400 °C. Surface characterization was performed by scanning electron microscopy, which indicated that the CdCl2 annealing tripled the CdTe thin films’ grain size. Raman characterization showed that CdS thin films deposited by RF sputtering present the first, the second, and the third longitudinal optical modes, indicating the good crystallinity of the CdS thin films. The study showed that the photovoltaic properties of the CdS/CdTe ultrathin devices improved as the CdS thicknesses decreased.

Exploration of electrode-modulated memory and threshold switching behaviour in Se-Te-Sn thin film devices

Due to their potential use in high-density, three-dimensional stackable cross-point array structures, the electrical switching ability of chalcogenide glasses has captured a lot of attention. Herein, the switching behaviour of unique Se86-xTe14Snx (x = 0, 2, 4, 6) chalcogenide glassy alloys in the form of a thin film were investigated. The electrode modulated dual functionality in switching was achieved by employing Aluminium (Al) and Silver (Ag), as top electrodes. The films with Al/Se86-xTe14Snx/Al interface exhibited memory-type switching due to the phase-changing properties of the material. The threshold voltage (Vth) decreased linearly from 12.75 V to 4.2 V at room temperature as Sn concentration in the glass increased. On the other hand, when the top electrode was replaced with Ag, the Ag/Se86-xTe14Snx/Al interface acted as a programmable metallization cell (PMC) showing threshold-switching properties. Ag/Se82Te14Sn4/Al thin film of thickness 200 nm showed promising results as a material for a unidirectional selector, due to the formation of temporary Ag filament inside chalcogenide material. The composition showed high selectivity (∼104), high endurance (>104 cycles), and low threshold voltage (∼1.6 V). The ability of the composition to exhibit electrode-dependent memory and threshold-switching phenomena makes the material an interesting case.

Exploring secondary optical transitions: a study utilizing the DITM method, and enhanced photocatalytic properties in Ni-doped CuSe

This study explores the simultaneous presence of two metal ions of Nickel (Ni) and Copper (Cu) on the formation of a metal selenide (Ni-doped CuSe) in an alkaline environment. The impact of Ni ions on creating the second optical transitions is investigated. Different concentrations amounts of Ni ions (0.01, 0.02, and 0.03 mol) are utilized to produce Ni-doped CuSe semiconductor thin films through a chemical solution deposition method with deposition times varying from 3 to 6 h. Absorbance spectra are employed to determine the band-gap, while Field Emission Scanning Electron Microscopy is utilized for morphological analysis. Structural and elemental analyses are conducted using X-ray Diffraction and Energy Dispersive X-ray Spectroscopy techniques. Additionally, a relatively innovative approach for determining the optical transitions, termed the Derivation Ineffective Thickness Method (DITM), is employed. DITM eliminates the need for thin film thickness and assumptions about the type of transition (direct or indirect) for band-gap calculation. Moreover, a comparison is made between the band-gap obtained from the Tauc model and the transitions obtained by DITM method. Furthermore, it is demonstrated that the optical transitions exhibit two distinct band-gaps associated with nickel selenide (NiSe) as second transition and copper selenide (CuSe) as fundamental transition. The presence of Ni is also found to enhance crystal quality. The study also briefly explores the improved photocatalytic properties of CuSe in the presence of Ni.

Stable positive unipolar resistive switching in chemical solution-deposited nanocrystalline spinel ferrite ZnFe2O4

The chemical solution-deposited zinc ferrite (ZFO; ZnFe2O4) RRAM devices on Pt/Ti/SiO2/Si substrate are being reported. Fabricated devices show the positive as well as negative unipolar switching memory properties. Thickness of ZFO thin films in Au/ZFO/Pt structure was varied to explore the resistive switching behavior. It is reported that forming voltage and resistance of the device increase by increasing the number of ZFO layers. Our results reveal that ZFO thin film deposited by eight times spin coating with a thickness of eight layers illustrates stable resistive switching with the most steady Set (2[Formula: see text]V) and Reset voltages (0.5[Formula: see text]V) as compared to the devices with two, four, and six layers. It also demonstrates the enhanced endurance of greater than 300 switching cycles and stable time-dependent resistance greater than 104[Formula: see text]s. The current transport mechanism is Ohmic at low-resistance state, while it leads to Schottky emission at high-resistance state. The possible switching mechanism is also discussed for the possible application of ZFO-based memory for nonvolatile RRAM devices.

Finite element simulation and experiment of residual stress evolution in MEMS structures

The MEMS device structure is usually formed by the combination of thick film and thin film deposition of many different materials, and the residual stress generated in the process of integration/superposition of different materials has a significant impact on the performance and reliability of the device.In this study, a test structure of a multilayer thin film was designed and processed. Based on this, finite element modeling analysis and reliability experiment, analyze the evolution of residual stress and construct the corresponding theoretical analysis model. The finite element modeling analysis can characterize the evolution and distribution laws of residual stress. The reliability experiment is mainly by carrying out the temperature shock experiment, and measuring the resistance value, resonance frequency and the surface morphology of the device, so as to better reflect the change of residual stress. Through this study, the resonant frequency and surface morphology of the device can reflect the residual stress of the device, which provides help for the test and analysis of the residual stress. To a certain extent, it can help reduce the harm caused by the residual stress in the design and manufacturing process, and improve the performance and reliability of MEMS devices.

Interfacial Magnetic Anisotropy Controlled Spin Pumping in Co60Fe20B20/Pt Stack

Controlled spin transport in magnetic stacks is required to realize pure spin current-driven logic and memory devices. The control over the generation and detection of the pure spin current is achieved by tuning the spin to charge conversion efficiency of the heavy metal interfacing with ferromagnets. Here, we demonstrate the direct tunability of spin angular momentum transfer and thereby spin pumping, in CoFeB/Pt stack, with interfacial magnetic anisotropy. The ultra-low thickness of the CoFeB thin film by tilting the magnetization from in-plane to out-of plane direction due to interfacial anisotropy from higher thickness of CoFeB thin film. The ferromagnetic resonance measurements are performed to investigate the magnetic anisotropy and spin pumping in CoFeB/Pt stacks. We clearly observe tunable spin pumping effect in the CoFeB/Pt stacks with varying CoFeB thicknesses. The spin current density, with varying ferromagnetic layer thickness, is found to increase from 1.10[Formula: see text]MA/m2 to 2.40[Formula: see text]MA/m2, with increasing in-plane anisotropy field. Such interfacial anisotropy-controlled generation of pure spin current can potentially lead to next-generation anisotropic spin current-controlled spintronic devices.

Fatigue behavior of copper thin films

In this study, to investigate the mean stress effect on fatigue life of a 12 μm thick copper thin film, fatigue tests were performed at four maximum stress levels for a wide range of stress ratios. Tensile and creep tests were also performed to obtain the reference mechanical properties of the copper thin film tested. The fatigue behavior of copper thin films depended on the regions of the stress ratio and the modified Goodman and Gerber equations could not describe the mean stress effect on fatigue life well. The Haigh diagram was constructed using stress vs. life curve data obtained in this study, and the constant life curve was approximated by three straight lines. The Haigh diagram for copper thin films can be classified into three regimes: fatigue, fatigue-creep, and creep, depending on the fracture mode. The fatigue life can be well described with the equivalent stress amplitude calculated from the constant life curve, regardless of stress ratio.

Enhancement of heat transfer in thin-film flow of a hybrid nanofluid over an inclined rotating disk subject to thermal radiation and viscous dissipation

Hybrid nanofluids have drawn more attention recently due to their potential to improve heat transfer in solar water heaters. However, it is still difficult to accurately predict how these nanofluids will behave when they flow over inclined rotating disks. The present work thoroughly analyses thin-film's 3D steady hybrid nanoliquid flow across an inclined spinning disk. The hybrid nanoliquid is a combination of copper (Cu) and aluminium oxide (Al2O3) tiny-size solid particles suspended in water. The flow is expressed in from of nonlinear partial differential equations (PDEs). Employing the proper similarity transformation, the mathematical model is renovated into a collection of a system of coupled ordinary differential equations. Utilising the Homotopy Analysis Method obtained equations are resolved. According to graphical results, adding a porous medium to a thin film flows over an inclined spinning disc considerably accelerates heat transfer and possibly improving thermal efficiency. The effective heat transfer characteristics can potentially improve the proficiency of solar water heaters, using a hybrid nanofluid made up of Al2O3 and Cu nano-sized solid particles suspended in water. The increasing impact of the thin film thickness drops the velocity and energy transmission rate of the fluid.

Photonic crystal nanolasers in polydimethylsiloxane thin film for sensing quantities leading to strain

We propose and realize a 1D photonic crystal nanocavity laser embedded in a polydimethylsiloxane (PDMS) thin film. The nanolaser in PDMS exhibits a significant optical response to structural deformation. It can be attached to object surfaces or integrated into different configurations, enabling the detection of different quantities that induce strain in the film. In experiments, this nanolaser can detect temperature variations or micrometer-scale bending degrees by attaching it to a temperature-controllable or bendable plate, respectively. Moreover, we further utilize the film as a diaphragm of a chamber to demonstrate its potential as a highly sensitive pressure gauge and chemical sensor. By adjusting the thickness of the PDMS thin film and the position of the nanolaser, we experimentally achieved a minimum detectable gas pressure variation of 0.12 kPa and a sensing dynamic range of 46 dB. We also investigate the optical response of the nanolaser to the swelling of the PDMS thin film induced by different organic solvents in experiments. The experimental wavelength shift rates over time are proportional to different chemical vapors’ PDMS swelling ratios, which can be used to identify specific chemical vapors within the chamber that induce PDMS swelling. Based on the experimental results and the capability of reattaching to different objects or configurations, we believe that our PhC nanolaser demonstrated herein holds significant potential as a highly sensitive mechanical and chemical sensor.

Improving the detecting sensitivity of transistor-based DNA sensor by the optimization of channel thicknesses

Organic thin-film transistor (OTFT) has been adopted as a promising sensing platform to detect DNA target molecules by analyzing their electrical parameters. The source/drain current ratio of OTFT (with and without DNA molecules) as the sensor sensitivity have been widely utilized to detect and identify DNA molecules. In this paper, pentacene as a typical organic semiconductor with various thin-film thicknesses have been adopted as the active layer of OTFT that induce to the changeable sensor sensitivity for the DNA molecules. Importantly, the sensitivity of the device shows the remarkable dependence in the applied gate voltages (VG) and an improved trend is observed with the lowering of VG. Importantly, a ten-fold improvement in the sensor sensitivity is achieved by the optimization of channel thicknesses at the low VG condition. Furthermore, the variable-temperature measurements are carried out to explore the charge mechanism of OTFT induced by the DNA molecules. Our studies indicate the sensor sensitivity is mainly determined by the charge-injection process of OTFT arisen in the linear region. Current work will be helpful for deeply understanding the operating mechanism of OTFT-based biosensors.

Monolithic Use of Inert Gas for Highly Transparent and Conductive Indium Tin Oxide Thin Films.

Due to its excellent electrical conductivity, high transparency in the visible spectrum, and exceptional chemical stability, indium tin oxide (ITO) has become a crucial material in the fields of optoelectronics and nanotechnology. This article provides a thorough analysis of growing ITO thin films with various thicknesses to study the impact of thickness on their electrical, optical, and physical properties for solar-cell applications. ITO was prepared through radio frequency (RF) magnetron sputtering using argon gas with no alteration in temperature or changes in substrate heating, followed with annealing in a tube furnace under inert conditions. An investigation of the influence of thickness on the optical, electrical, and physical properties of the films was conducted. We found that the best thickness for ITO thin films was 100 nm in terms of optical, electrical, and physical properties. To gain full comprehension of the impact on electrical properties, the different samples were characterized using a four-point probe and, interestingly, we found a high conductivity in the range of 1.8-2 × 106 S/m, good resistivity that did not exceed 1-2 × 10-6 Ωm, and a sheet resistance lower than 16 Ω sq-1. The transparency values found using a spectrophotometer reached values beyond 85%, which indicates the high purity of the thin films. Atomic force microscopy indicated a smooth morphology with low roughness values for the films, indicating an adequate transitioning of the charges on the surface. Scanning electron microscopy was used to study the actual thicknesses and the morphology, through which we found no cracks or fractures, which implied excellent deposition and annealing. The X-ray diffraction microscopy results showed a high purity of the crystals, as the peaks (222), (400), (440), and (622) of the crystallographic plane reflections were dominant, which confirmed the existence of the faced-center cubic lattice of ITO. This work allowed us to design a method for producing excellent ITO thin films for solar-cell applications.

Effect of Holding Time on Structure and Optical Properties of PbSe Films Deposited in a Chemical Bath on Si(100) Substrates

Lead selenide (PbSe) thin films are widely used in the field of infrared detection due to their high infrared detection rate and sensitivity at room temperature. In recent years, PbSe thin films have been successfully grown on Si substrates. This article utilized the chemical bath deposition (CBD) method to prepare uniform and dense PbSe thin films on Si(100) substrates. The crystal structure, micro morphology, thickness, and energy band gap of polycrystalline PbSe thin films on Si(100) substrates were studied at a deposition temperature of 70 °C with a holding time of 30–120 min. Results showed that the prepared PbSe films bonded well with the Si(100) substrate. As the holding time increased, PbSe maintained [200] crystal orientation growth, and the crystallinity improved. The thickness of the PbSe thin film increased with the holding time, while the energy band gap first decreased and then increased. The PbSe thin film prepared with a holding time of 60 min had a thickness of about 388.5 nm, grew in the [200] crystal orientation, and had an energy band gap of 0.153 eV, showing the best optical properties.

Photocurrent Enhancement by Copper Incorporation in Chemical-Solution-Synthesized Inorganic Lead Perovskite Thin Films.

Perovskite thin films are at the forefront of highly promising photovoltaic technologies due to their remarkable optoelectronic properties. Herein, we explore a low-cost, reproducible, and industry-scalable methodology to synthesize an all-inorganic CsPbI1.5Br1.5 perovskite thin film with additional incorporation of copper and chloride ions into the lattice structure. The synthesis process involves chemical bath deposition of PbS, followed by a gas-solid iodination reaction to yield PbI2. Subsequently, dip-coating incorporates Cs+, Cu2+, Br-, and Cl- ions into PbI2, and annealing at 270 °C produces perovskite thin films. The results show a large coverage area and a uniform thickness of each perovskite thin film. Comprehensive characterization, including X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy, and photoluminescence, provides the structural, chemical, and optical properties of the synthesized thin films. To evaluate the practical implications of our methodology, we fabricated photodetectors employing CsPbI1.5Br1.5 and (Cs0.95:Cu0.01)PbI1.5Br1.3Cl0.1 perovskite films. A comparative analysis unequivocally demonstrates a significant increase in photodetector performance when utilizing (Cs0.95:Cu0.01)PbI1.5Br1.3Cl0.1 perovskite films. While our findings quantitatively assess the tangible enhancement in photocurrent, we acknowledge the potential for improvement in device fabrication to enhance the overall performance. This study not only affirms the successful low-cost synthesis of perovskite thin films but also emphasizes the pivotal role of Cu2+ and Cl- ions in enhancing the performance of perovskite-based optoelectronic devices.

Resonant-cavity-enhanced 4H-SiC thin film MSM UV photodetectors on SiO2/Si substrates

Heterogeneous integration of 4H-SiC film with Si substrate can produce ultraviolet (UV) photodetectors (PD) with higher performance and easier integration with silicon CMOS circuits than homogenous epitaxy of 4H-SiC on SiC substrates. In this study, 1.2 µm thick high-quality single crystalline 4H-SiC thin films were successfully bonded with SiO2/Si (100) substrates using the Smart-Cut technique, achieving bubble-free bonding interfaces and 6.03 MPa bonding strength. UV PDs of metal–semiconductor–metal type with a resonant cavity structure were fabricated for the first time using the heterogenous film sample. The device exhibits a low dark current of 1.6 × 10−13 A in reverse bias of 20 V and a maximum specific detectivity of about 5.2 × 1012 Jones at 280 nm, which is significant for a device with a resonance-enhanced structure. These results demonstrate a promising approach for the fabrication of 4H-SiC devices with silicon CMOS circuits.

Reciprocal and non-reciprocal electromagnetic wave propagation in sub-100 nm epitaxial YIG thin films deposited under different oxygen growth pressure

Directional dependent transport of information in magnetic thin films offers a great opportunity to realize reciprocal and nonreciprocal microwave devices, such as filters, phase shifter, isolators and circulators. Electromagnetic wave (EM) propagation in sub-100 nm thin magnetic film is critical, yet reciprocal and non-reciprocal wave propagation and its accurate measurements remain a challenge. We investigated reciprocal and non-reciprocal wave propagation in 90 nm thick epitaxial thin films of yttrium iron garnet (Y3Fe5O12:YIG) grown by pulse laser deposition (PLD) technique on gadolinium gallium garnet [GGG(100)] substrates. The effect of oxygen growth pressure during deposition of YIG films exhibit directional dependence properties of electromagnetic wave propagation. The reciprocal EM wave propagation was generated by a S-type transmission line to achieve microwave (RF) magnetic fields (hRF) perpendicular to applied dc magnetic fields (HDC), to ensure the ferromagnetic resonance (FMR) condition. The center frequency is tuned up to 20 GHz with an applied magnetic field of 6 kOe. The tuning of the center frequency was achieved as of 85.3 % with HDC of 6 kOe. To achieve non-reciprocal EM-wave propagation one straight microstrip line was used to ensures a parallel configuration (parallel pumping FMR condition) of hRF to HDC. The nonreciprocity observed is due to the presence of gyrotropic properties in the YIG thin films and it enhances when YIG film was placed in asymmetric geometry. Further, oxygen growth pressure (>0.1 mbar) grown YIG films enhances the nonreciprocity by 21.6 %. The experimental results were successfully validated using high-frequency structure simulator (HFSS). Hence, these results indicate that controlled deposition parameters can be a crucial parameter in the design of reciprocal and nonreciprocal microwave signal processing devices.

Defects Contributing to Hysteresis in Few-Layer and Thin-Film MoS2 Memristive Devices.

Molybdenum disulfide, a two-dimensional material extensively explored for potential applications in non-von Neumann computing technologies, has garnered significant attention owing to the observed hysteresis phenomena in MoS2 FETs. The dominant sources of hysteresis reported include charge trapping at the channel-dielectric interface and the adsorption/desorption of molecules. However, in MoS2 FETs with different channel thicknesses, the specific nature and density of defects contributing to hysteresis remain an intriguing aspect requiring further investigation. This study delves into memristive devices with back-gate modulated channel layers based on CVD-deposited flake-based and thin-film-based MoS2 FETs, with a few-layer (FL) and thin-film (TF) channel thickness. Analysis of current-voltage (I-V) and conductance-frequency (Gp/ω-f) measurements led to the conclusion that the elevated hysteresis observed in TF MoS2 devices, as opposed to FL devices, stems from a substantial contribution from intrinsic defects within the channel volume, surpassing that of interface defects. This study underscores the significance of considering both intrinsic defects within the bulk and the interface defects of the channel when analyzing hysteresis in MoS2 FETs, particularly in TF FETs. The selection between FL and TF MoS2 devices depends on the requirements for memristive applications, considering factors such as hysteresis tolerance and scaling capabilities.