Abstract
Due to their potential use in high-density, three-dimensional stackable cross-point array structures, the electrical switching ability of chalcogenide glasses has captured a lot of attention. Herein, the switching behaviour of unique Se86-xTe14Snx (x = 0, 2, 4, 6) chalcogenide glassy alloys in the form of a thin film were investigated. The electrode modulated dual functionality in switching was achieved by employing Aluminium (Al) and Silver (Ag), as top electrodes. The films with Al/Se86-xTe14Snx/Al interface exhibited memory-type switching due to the phase-changing properties of the material. The threshold voltage (Vth) decreased linearly from 12.75 V to 4.2 V at room temperature as Sn concentration in the glass increased. On the other hand, when the top electrode was replaced with Ag, the Ag/Se86-xTe14Snx/Al interface acted as a programmable metallization cell (PMC) showing threshold-switching properties. Ag/Se82Te14Sn4/Al thin film of thickness 200 nm showed promising results as a material for a unidirectional selector, due to the formation of temporary Ag filament inside chalcogenide material. The composition showed high selectivity (∼104), high endurance (>104 cycles), and low threshold voltage (∼1.6 V). The ability of the composition to exhibit electrode-dependent memory and threshold-switching phenomena makes the material an interesting case.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
