Plasma oxidation of metals has been studied extensively to fabricate nanoporous oxides with the merits of room temperature treatment and facile control of the oxidation rate. Plasma oxidation of Ag, motivated by studies on atomic oxygen corrosion of Ag, is one of the most studied systems. However, several important questions remain unaddressed and even overlooked traditionally: the critical role played by atomic O in promoting oxidation, evolution of microstructures during plasma exposure, and a sound framework for quantitative oxidation kinetic analyses. In this paper, the O2 plasma oxidation behavior of Ag films deposited on Si substrates was systematically studied both experimentally and theoretically. The effects of plasma pressure and power on the microstructural evolution and oxidation kinetics of Ag films of various thicknesses were investigated using comprehensive characterization, as well as numerical analysis of plasma chemistry for deriving atomic O concentration. The findings here provide a full picture and deep mechanistic insights into the morphology and microstructure evolution of Ag films and the growth of dense or porous Ag2O and AgO oxide layers by plasma oxidation, revealing the intricate interplay between atomic O, vacancy creation, Ag ion diffusion, Kirkendall effect, formation of pores, and interfacial void coalescence. The methodology developed here can be easily transferred to help understand the plasma oxidation behavior of other metals.
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