Photoreflectance (PR) measurements have been performed on InAs∕In0.53Ga0.23Al0.24As quantum dashes (QDashes) molecular-beam epitaxy grown on InP substrate. The PR features related to all relevant parts of the structure have been detected, including the ground and excited state optical transitions in QDashes. QDash ground state transition shifts from 1.5 to almost 2μm with the increase in the thickness of InAs layer, corresponding to the increase in the average size of the dashes. Excited state transitions have been clearly observed at the energy of about 150meV above the ground state transition energy.