Abstract
The photoluminescence, magnetoresistance, Shubnikov-de Haas and Hall effect have been investigated in short period InAs/GaAs superlattices with different numbers of periods (3⩽ N⩽24) and a total thickness of 14 nm as a function of InAs layer thickness Q in the range 0.33⩽ Q⩽2.7 monolayer (ML). These superlattices represent a quantum well with average composition In 0.16Ga 0.84As. Photoluminescence intensity and electron mobility enhancement occur when the InAs layer thickness Q is equal to 0.33 or 2.0 ML . When Q⩾2.7 ML , quantum dots are formed. The mobility of electrons and the anisotropy of resistivity do not depend monotonically on the thickness Q of InAs layers.
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