Abstract
Self-organized InAs quantum dashes grown on In0.53Ga0.23Al0.24As∕InP have been investigated by chemically sensitive scanning transmission electron microscopy. The quantum dashes, which consist of pure InAs, exhibit a triangular cross section. Most important, the quantum dash size depends linearly on the nominal InAs layer thickness and can be varied by a factor of 3 without changing the height∕width ratio. Thus, the emission wavelength can be controlled between 1.37 and 1.9μm without modifying shape and composition of the quantum dashes by adjusting a single growth parameter.
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