Temperature Dependence Of Mobility Research Articles

High Field Temperature-Independent Field-Effect Mobility of Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors: Understanding the Importance of Equivalent-Oxide-Thickness Downscaling

We investigate the temperature dependence of field-effect mobility (μ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">eff</sub> ) on amorphous indium-gallium- zinc oxide (α-IGZO) thin-film transistors (TFTs) having 10-nm-thick HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> . Thanks for the downscaling of the equivalent oxide thickness (EOT), we observe, for the first time, a temperature-independent μ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">eff</sub> at a high field or high carrier concentration (N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">carrier</sub> ) regime and a strong temperature dependent μ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">eff</sub> at a low field or low Ncarrier regime. The observation highlights the importance of EOT downscaling to enhance N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">carrier</sub> and facilitate the Fermi level (EF) to approach and even exceed the potential barriers' peak (EM), leading to a high and temperature-independent μ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">eff</sub> at high N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">carrier</sub> . N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">carrier</sub> at which E <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">F</sub> = E <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">M</sub> is extracted to be ~6 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">12</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> . A detailed study of the relationship between EOT scaling and the gate bias voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GS</sub> ) at which EF equals to E <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">M</sub> is performed. α-IGZO TFTs with an ultra scaled gate dielectric are capable of alleviating the negative effects from the potential barriers at low VGS and could enable low power applications with high performance. Besides, a weak temperature-dependent subthreshold swing (SS) of α-IGZO TFT was observed and explained.

Charge and Thermoelectric Transport in Polymer-Sorted Semiconducting Single-Walled Carbon Nanotube Networks.

Understanding the charge transport mechanisms in chirality-selected single-walled carbon nanotube (SWCNT) networks and the influence of network parameters is essential for further advances of their optoelectronic and thermoelectric applications. Here, we report on charge density and temperature-dependent field-effect mobility and on-chip field-effect-modulated Seebeck coefficient measurements of polymer-sorted monochiral small-diameter (6,5) (0.76 nm) and mixed large-diameter SWCNT (1.17-1.55 nm) networks (plasma torch nanotubes, RN) with different network densities and length distributions. All untreated networks display balanced ambipolar transport and electron-hole symmetric Seebeck coefficients. We show that charge and thermoelectric transport in SWCNT networks can be modeled by the Boltzmann transport formalism, incorporating transport in heterogeneous media and fluctuation-induced tunneling. Considering the diameter-dependent one-dimensional density of states (DoS) of the SWCNTs composing the network, we can simulate the charge density and temperature-dependent Seebeck coefficients. Our simulations suggest that scattering in these networks cannot be described as simple one-dimensional acoustic and optical phonon scattering as for single SWCNTs. Instead the relaxation time is inversely proportional to energy (τ ∝ (E - EC)s, s = -1, EC being the energy of the first van Hove singularity), presumably pointing toward the more two-dimensional character of scattering events and the necessity to include scattering at the SWCNT junctions. Finally, our observation of higher power factors in trap-free, 1,2,4,5-tetrakis(tetramethylguanidino)benzene-treated (6,5) networks than in the RN networks emphasizes the importance of chirality selection to tune the width of the DoS. To benefit from both higher intrinsic mobilities and a large thermally accessible DoS, we propose trap-free, narrow DoS distribution, large-diameter SWCNT networks for both electronic and thermoelectric applications.

β-Glucosylation of cholesterol reduces sterol-sphingomyelin interactions

Cholesteryl-β-D-glucoside (ChoGlc) is a mammalian glycolipid that is expressed in brain tissue. The effects of glucosylation on the ordering and lipid interactions of cholesterol (Cho) were examined in membranes composed of N-stearoyl sphingomyelin (SSM), which is abundant in the brain, and to investigate the possible molecular mechanism involved in these interactions. Differential scanning calorimetry revealed that ChoGlc was miscible with SSM in a similar extent of Cho. Solid-state 2H NMR of deuterated SSM and fluorescent anisotropy using 1,6-diphenylhexatriene demonstrated that the glucosylation of Cho significantly reduced the effect of the sterol tetracyclic core on the ordering of SSM chains. The orientation of the sterol core was further examined by solid-state NMR analysis of deuterated and fluorinated ChoGlc analogues. ChoGlc had a smaller tilt angle between the long molecular axis (C3–C17) and the membrane normal than Cho in SSM bilayers, and the fluctuations in the tilt angle were largely unaffected by temperature-dependent mobility changes of SSM acyl chains. This orientation of the sterol core of ChoGlc leads to reduce sterol-SSM interactions. The MD simulation results suggested that the Glc moiety perturbs the SSM-sterol interactions, which reduces the umbrella effect of the phosphocholine headgroup because the hydrophilic glucose moiety resides at the same depth as an SSM amide group. These differences between ChoGlc and Cho also weaken the SSM-ChoGlc interactions. Thus, the distribution and localization of Cho and ChoGlc possibly control the stability of sphingomyelin-based domains that transiently occur at specific locations in biological membranes.

Hysteresis of the Grain-Boundary Mobility of the [10$$\overline{1}$$0] Tilt Boundaries in Zinc

The hysteresis of the temperature dependence of the grain-boundary mobility induced by grain-boundary phase transitions is studied. The dependence of the grain-boundary mobility on the reciprocal annealing temperature is experimentally found to be nonlinear and different upon heating and cooling. The curved segment formed by the temperature dependences of the mobility upon heating and cooling is considered as a hysteresis loop.

Exciton diffusion in hBN -encapsulated monolayer MoSe2

Excitons, quasi particles composed of an electron and a hole, play an important role in optical responses in low-dimensional nanostructures. In this work, we have investigated exciton diffusion in a monolayer MoSe2 encapsulated between flakes of hexagonal boron nitrides (hBN/MoSe2/hBN). Through PL imaging and numerical solving the 2D diffusion equation, we revealed that temperature dependence of exciton mobility in the hBN/MoSe2/hBN shows non-saturating increase at low temperature, which is qualitatively different from those of quantum wells composed of compound semiconductors. Ultraflat structure of monolayer MoSe2 in the hBN/MoSe2/hBN probably leads to the suppression of charged-impurity scattering and surface-roughness scattering.

A novel low line regulation CMOS voltage reference without BJTs and resistors

A novel CMOS-only low line regulation voltage reference is presented in this paper. An output subcircuit composed of MOSFETs operating in the subthreshold region and saturation region is utilized to eliminate the temperature dependence of mobility and oxide capacitance, and produces a temperature-insensitive voltage reference. No bipolar junction transistors (BJTs) or resistors are used which can decrease the area greatly. By using most of the transistors operating in the subthreshold region, the power dissipation and the supply voltage are reduced. The proposed voltage reference is designed in the standard 0.18 μm CMOS process. The simulation results show that the output voltage is 958.971 mV at TT process corners, a temperature coefficient of 18.6096 ppm/°C range from20 °C to 110 °C is achieved, the line regulator (LR) of the proposed circuit is 0.037 mV/V from 1.5 V to 2.5 V supply voltage, and the power supply rejection ratio (PSRR) is75.77 dB at 100 Hz. The active area of the presented voltage reference is 0.0038 mm 2 .

Low field transport calculation of 2-dimensional electron gas in β-(AlxGa1−x)2O3/Ga2O3 heterostructures

β -Gallium oxide (β-Ga2O3) is an emerging wide bandgap semiconductor with potential applications in power and RF electronic systems. Previous theoretical calculation on a two-dimensional electron gas (2DEG) in β-(AlxGa1−x)2O3/Ga2O3 heterostructures, taking only polar optical and remote impurity scattering into account, shows improved mobility compared to bulk β-Ga2O3. However, the experimental results in 2DEGs have not achieved the predicted mobility values. In this work, we perform more comprehensive calculations to study the low field 2DEG transport properties in the β-(AlxGa1−x)2O3/Ga2O3 heterostructures. A self-consistent Poisson–Schrödinger simulation of a heterostructure is used to obtain the sub-band energies and the wavefunctions in the quantum well. The phonon dispersion is calculated based on the ab initio methods under the density functional theory and density functional perturbation theory frameworks. The different scatterings that are included in the calculation are due to phonons (polar and non-polar), remote impurities, the alloy disorder, and interface roughness. We include a full dynamic screening of polar optical phonons. We report the temperature dependent low-field electron mobility as a function of 2DEG density. The overall mobility is found to be increasing with electron density with an exception at low density where the antiscreening of LO phonons reduces mobility. The effect of spacer thickness, aluminum fraction, and roughness parameters on mobility is shown to be critically important. The effect of the confinement direction on 2DEG mobility is found to be small and comparable to bulk. A comparison of calculated mobility values with experimentally reported data shows a good agreement.

Design Rules to Maximize Charge-Carrier Mobility along Conjugated Polymer Chains.

The emergence of polymeric materials displaying high charge-carrier mobility values despite poor interchain structural order has spawned a renewal of interest in the identification of structure-property relationships pertaining to the transport of charges along conjugated polymer chains and the subsequent design of optimized architectures. Here, we present the results of intrachain charge transport simulations obtained by applying a robust surface hopping algorithm to a phenomenological Hamiltonian parametrized against first-principles simulations. Conformational effects are shown to provide a clear signature in the temperature-dependent charge-carrier mobility that complies with recent experimental observations. We further contrast against molecular crystals the evolution with electronic bandwidth and electron-phonon interactions of the room-temperature mobility in polymers, showing that intrachain charge-carrier mobility values in excess of 100 cm2/(V s) can be achieved through a proper chemical engineering of the backbones.

Breakdown of Ohm’s law and nontrivial Berry phase in magnetic Weyl semimetal Co3Sn2S2

The concept of realization of Weyl points close to the Fermi level in materials with broken time-reversal symmetry has significant theoretical and technological ramifications. Here, we review the investigation of magneto-transport measurements in single crystals of magnetic Weyl semimetal Co3Sn2S2. We see a turn-on like behaviour followed by saturation in resistivity under magnetic field in the low temperature region which is allocated to the topological surface states. A non-saturating magnetoresistance, linear at high fields, is observed at low temperatures where applied magnetic field is transverse to the current direction. The linear negative magnetoresistance at low magnetic fields (B < 0.1 T) provides evidence for time reversal symmetry breaking in Co3Sn2S2. Chiral anomaly in Weyl metallic state in Co3Sn2S2 is confirmed from the breakdown of Ohm’s law in the electronic transport. Shubnikov de Haas (SdH) oscillation measurement has unveiled the multiple sub-bands on the Fermi surface that corresponds to a non-trivial Berry phase. The non-linear behaviour in Hall resistivity validates the existence of two type of charge carriers with equal electron and hole densities. Strong temperature dependence of carrier mobilities reflects the systematic violation of Kohler’s rule in Co3Sn2S2. Our findings open avenues to study kagome-lattice based magnetic Weyl semimetals that unfurl the basic topological aspects leading to significant ramification for spintronics.

Influence of air atmosphere on electrical characteristics of p-type MoTe2 FETs under DC and pulsed mode operation

Herein, ambient effects on electrical characteristics of p-type MoTe2 FETs under DC and pulse mode measurements were systematically investigated. As a result of reduced hole concentration in a high vacuum condition, threshold voltage increased as compared to air condition. Moreover, reduction of charge trapping and scattering in vacuum condition leads to electrical performance improvement such as contact resistance, mobility, and interface trap density. Pulsed I-V measurement and CYTOP passivation was additionally introduced to investigate into intrinsic ambient effects by excluding external issues near interface and top channel region. Lastly, temperature dependent mobility variation was examined to validate scattering mechanism in the channel of MoTe2 FETs.

Guiding Charge Transport in Semiconducting Carbon Nanotube Networks by Local Optical Switching.

Photoswitchable, ambipolar field-effect transistors (FETs) are fabricated with dense networks of polymer-sorted, semiconducting single-walled carbon nanotubes (SWCNTs) in top-gate geometry with photochromic molecules mixed in the polymer matrix of the gate dielectric. Both hole and electron transport are strongly affected by the presence of spiropyran and its photoisomer merocyanine. A strong and persistent reduction of charge carrier mobilities and thus drain currents upon UV illumination (photoisomerization) and its recovery by annealing give these SWCNT transistors the basic properties of optical memory devices. Temperature-dependent mobility measurements and density functional theory calculations indicate scattering of charge carriers by the large dipoles of the merocyanine molecules and electron trapping by protonated merocyanine as the underlying mechanism. The direct dependence of carrier mobility on UV exposure is employed to pattern high- and low-resistance areas within the FET channel and thus to guide charge transport through the nanotube network along predefined paths with micrometer resolution. Near-infrared electroluminescence imaging enables the direct visualization of such patterned current pathways with good contrast. Elaborate mobility and thus current density patterns can be created by local optical switching, visualized and erased again by reverse isomerization through heating.

Effects of interfacial dielectric layers on the charge transport characteristics in sol-gel based amorphous metal-oxide thin-film transistors

We report the effects of interfacial dielectric layers on the field-effect mobility of thin-film transistors (TFTs) with sol-gel based amorphous indium-gallium-zinc oxide (IGZO) films on thermally-grown silicon dioxide (SiO2) and sol-gel based zirconium dioxide (ZrO2) dielectrics. When the field-effect mobility as a function of the channel carrier concentration was extracted, the SiO2 based IGZO-TFT exhibited higher mobility than the ZrO2 based IGZO-TFT at a low carrier concentration. However, the field-effect mobility of the ZrO2 based IGZO-TFT increased as the gate charges increasing due to the gate bias applied. We also investigate the effects of interfacial dielectric layers on the charge transport characteristics in IGZO-TFTs by conducting temperature-dependent field-effect mobility measurements in the temperature range of 120 – 300 K. By analyzing an Arrhenius plot of the results, we confirm that the charge transport of IGZO-TFTs is dominant by the multiple-trapping-and-release model and discuss the effective mobility, which is significantly affected by the interfacial trap level and channel carrier concentration. Finally, we investigate the figure of merit and the activation energy of IGZO-TFTs with ZrO2 dielectrics fabricated by the optimized solution-process developed in this study through comparisons with other sol-gel based amorphous metal-oxide TFTs reported in the literature.

On the temperature dependence of grain boundary mobility

The grain boundary (GB) mobility relates GB velocity to the thermodynamic driving forces and is central to our understanding of microstructure evolution in polycrystals. Recent molecular dynamics (MD) and experimental studies have shown that the temperature-dependence of the GB mobility is much more varied than is commonly thought. GB mobility may increase, decrease, remain constant or show multiple peaks with increasing temperature. We propose a mechanistic model for GB migration, based on the formation and migration of line defects (disconnection) within the GB. We implement this model in a kinetic Monte Carlo and statistical mechanics framework; the results capture all of these observed temperature dependencies and are shown to be in quantitative agreement with each other and direct MD simulations of GB migration for a set of specific grain boundaries. Examination of the dependence of GB mobility on disconnection mode and temperature provides new insight into how GBs migrate in polycrystalline materials.

(Invited) Polymer-Wrapped and sp3-Functionalized (6,5) SWNTs for Charge Transport and Near-Infrared Emission

Polymer-sorted (6,5) single-walled carbon nanotubes are available in large amounts and can be used for a wide range of optoelectronic devices. Here, we report on the investigation of charge transport in dense semiconducting nanotube films in field-effect transistors using temperature and carrier density dependent mobility and Seebeck coefficient measurements. Furthermore, we show how both their emissive and charge transport properties can be tuned by adding light-switchable functional groups to the wrapping polymer and by selected sp3-defects created via diazonium chemistry or aryl halide chemistry in organic solvents.

Reduced Nonradiative Voltage Loss in Terpolymer Solar Cells.

The dissociation of hybrid local exciton and charge transfer excitons (LE-CT) in efficient bulk-heterojunction nonfullerene solar cells contributes to reduced nonradiative photovoltage loss, a mechanism that still remains unclear. Herein we studied the energetic and entropic contribution in the hybrid LE-CT exciton dissociation in devices based on a conjugated terpolymer. Compared with reference devices based on ternary blends, the terpolymer devices demonstrated a significant reduction in the nonradiative photovoltage loss, regardless of the acceptor molecule, be it fullerene or nonfullerene. Fourier transform photocurrent spectroscopy revealed a significant LE-CT character in the terpolymer-based solar cells. Temperature-dependent hole mobility and photovoltage confirm that entropic and energetic effects contribute to the efficient LE-CT dissociation. The energetic disorder value measured in the fullerene- or nonfullerene-based terpolymer devices suggested that this entropic contribution came from the terpolymer, a signature of higher disorder in copolymers with multiple aromatic groups. This gives new insight into the fundamental physics of efficient LE-CT exciton dissociation with smaller nonradiative recombination loss.

Transposon mobilization in the human fungal pathogen Cryptococcus is mutagenic during infection and promotes drug resistance in vitro

When transitioning from the environment, pathogenic microorganisms must adapt rapidly to survive in hostile host conditions. This is especially true for environmental fungi that cause opportunistic infections in immunocompromised patients since these microbes are not well adapted human pathogens. Cryptococcus species are yeastlike fungi that cause lethal infections, especially in HIV-infected patients. Using Cryptococcus deneoformans in a murine model of infection, we examined contributors to drug resistance and demonstrated that transposon mutagenesis drives the development of 5-fluoroorotic acid (5FOA) resistance. Inactivation of target genes URA3 or URA5 primarily reflected the insertion of two transposable elements (TEs): the T1 DNA transposon and the TCN12 retrotransposon. Consistent with in vivo results, increased rates of mutagenesis and resistance to 5FOA and the antifungal drugs rapamycin/FK506 (rap/FK506) and 5-fluorocytosine (5FC) were found when Cryptococcus was incubated at 37° compared to 30° in vitro, a condition that mimics the temperature shift that occurs during the environment-to-host transition. Inactivation of the RNA interference (RNAi) pathway, which suppresses TE movement in many organisms, was not sufficient to elevate TE movement at 30° to the level observed at 37°. We propose that temperature-dependent TE mobilization in Cryptococcus is an important mechanism that enhances microbial adaptation and promotes pathogenesis and drug resistance in the human host.

Electronic and ionic conduction in ligand-free lead selenide colloidal quantum dots

We fabricated a ligand-free lead selenide (PbSe) colloidal quantum dot (CQD) film and probed its electrical properties using a field-effect transistor (FET) at low temperature. The contribution of the ionic conduction to the electrical properties in the PbSe CQD film became significant after ligand removal using ammonium sulfide [(NH4)2S], evidenced by temperature-dependent FET mobility, threshold voltage, and current hysteresis depending on gate scan direction. The enhanced FET mobility and increased carrier concentration at a lower temperature are attributed to reduced ionic conduction, suppressing the gate electric field screening at the PbSe/SiO2 interface.

High mobility and high thermoelectric power factor in epitaxial ScN thin films deposited with plasma-assisted molecular beam epitaxy

Scandium nitride (ScN) is an emerging rock salt III-nitride semiconductor and has attracted significant interest in recent years for its potential thermoelectric applications as a substrate for high-quality epitaxial GaN growth and as a semiconducting component for epitaxial single-crystalline metal/semiconductor superlattices for thermionic energy conversion. Solid-solution alloys of ScN with traditional III-nitrides such as AlxSc1−xN have demonstrated piezoelectric and ferroelectric properties and are actively researched for device applications. While most of these exciting developments in ScN research have employed films deposited using low-vacuum methods such as magnetron sputtering and physical and chemical vapor depositions for thermoelectric applications and Schottky barrier-based thermionic energy conversion, it is necessary and important to avoid impurities, tune the carrier concentrations, and achieve high-mobility in epitaxial films. Here, we report the high-mobility and high-thermoelectric power factor in epitaxial ScN thin films deposited on MgO substrates by plasma-assisted molecular beam epitaxy. Microstructural characterization shows epitaxial 002 oriented ScN film growth on MgO (001) substrates. Electrical measurements demonstrated a high room-temperature mobility of 127 cm2/V s and temperature-dependent mobility in the temperature range of 50–400 K that is dominated by dislocation and grain boundary scattering. High mobility in ScN films leads to large Seebeck coefficients (−175 μV/K at 950 K) and, along with a moderately high electrical conductivity, a large thermoelectric power factor (2.3 × 10−3 W/m-K2 at 500 K) was achieved, which makes ScN a promising candidate for thermoelectric applications. The thermal conductivity of the films, however, was found to be a bit large, which resulted in a maximum figure-of-merit of 0.17 at 500 K.

Differentiating Luminal and Membrane-Associated Nuclear Envelope Proteins

The nuclear envelope (NE) consists of two concentric nuclear membranes separated by the lumen, an ∼40-nm-wide fluid layer. NE proteins are implicated in important cellular processes ranging from gene expression to nuclear positioning. Although recent progress has been achieved in quantifying the assembly states of NE proteins in their native environment with fluorescence fluctuation spectroscopy, these studies raised questions regarding the association of NE proteins with nuclear membranes during the assembly process. Monitoring the interaction of proteins with membranes is important because the binding event is often associated with conformational changes that are critical to cellular signaling pathways. Unfortunately, the close physical proximity of both membranes poses a severe experimental challenge in distinguishing luminal and membrane-associated NE proteins. This study seeks to address this problem by introducing new, to our knowledge, fluorescence-based assays that overcome the restrictions imposed by the NE environment. We found that luminal proteins violate the Stokes-Einstein relation, which eliminates a straightforward use of protein mobility as a marker of membrane association within the NE. However, a surprising anomaly in the temperature-dependent mobility of luminal proteins was observed, which was developed into an assay for distinguishing between soluble and membrane-bound NE proteins. We further introduced a second independent tool for distinguishing both protein populations by harnessing the previously reported undulations of the nuclear membranes. These membrane undulations introduce local volume changes that produce an additional fluorescence fluctuation signal for luminal, but not for membrane-bound, proteins. After testing both methods using simple model systems, we apply the two assays to investigate a previously proposed model of membrane association for the luminal domain of SUN2, a constituent protein of the linker of nucleoskeleton and cytoskeleton complex. Finally, we investigate the effect of C- and N-terminal tagging of the luminal ATPase torsinA on its ability to associate with nuclear membranes.

Band gap renormalization, carrier mobilities, and the electron-phonon self-energy in crystalline naphthalene

Organic molecular crystals are expected to feature appreciable electron-phonon interactions that influence their electronic properties at zero and finite temperature. In this work, we report first-principles calculations and an analysis of the electron-phonon self-energy in naphthalene crystals. We compute the zero-point renormalization and temperature dependence of the fundamental band gap, and the resulting scattering lifetimes of electronic states near the valence- and conduction-band edges employing density functional theory. Further, our calculated phonon renormalization of the $GW$-corrected quasiparticle band structure predicts a fundamental band gap of 5 eV for naphthalene at room temperature, in good agreement with experiments. From our calculated phonon-induced electron lifetimes, we obtain the temperature-dependent mobilities of electrons and holes in good agreement with experimental measurements at room temperatures. Finally, we show that an approximate energy self-consistent computational scheme for the electron-phonon self-energy leads to the prediction of strong satellite bands in the electronic band structure. We find that a single calculation of the self-energy can reproduce the self-consistent results of the band gap renormalization and electrical mobilities for naphthalene, provided that the on-the-mass-shell approximation is used, i.e., if the self-energy is evaluated at the bare eigenvalues.