Abstract
Herein, ambient effects on electrical characteristics of p-type MoTe2 FETs under DC and pulse mode measurements were systematically investigated. As a result of reduced hole concentration in a high vacuum condition, threshold voltage increased as compared to air condition. Moreover, reduction of charge trapping and scattering in vacuum condition leads to electrical performance improvement such as contact resistance, mobility, and interface trap density. Pulsed I-V measurement and CYTOP passivation was additionally introduced to investigate into intrinsic ambient effects by excluding external issues near interface and top channel region. Lastly, temperature dependent mobility variation was examined to validate scattering mechanism in the channel of MoTe2 FETs.
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