The experimental temperature dependences of the photosensitivity and the data on the lifetime of nonequilibrium charge carriers in epitaxial CdxHg1−x Te layers with x = 0.20–0.23 were used to show that, in the region of intrinsic and extrinsic conductivity in n-type films grown by molecular beam epitaxy, CHCC Auger recombination is the prevailing recombination mechanism. At the same time, in p-type films grown by liquid-or vapor-phase epitaxy, it is observed that, in the region of extrinsic conductivity, CHLH Auger recombination competes with Shockley-Read recombination. The n-type films grown by molecular beam epitaxy contain a much lower concentration of recombination centers than the p-type films grown by liquid-or gasphase epitaxy.