Abstract
Resonant photoemission study of electronic structure of molecular beam epitaxy grown Eu 1-x Gd x Te layers without and with cover protected layer of Te were performed using synchrotron radiation. The analysis of the valence band and shallow core levels spectra of the clean surface of Eu 1-x Gd x Te obtained in situ under UHV conditions showed the existence of Eu 2+ and Eu 3+ ions in the layers. The trivalent europium ions mostly are located at the surface and its amount strongly depends on sample surface preparation conditions. The prolonged annealing of Eu 1-x Gd x Te layers covered with protected layer of Te leads to formation of clean surface of the sample not changing the stoichiometry of it and without the accumulation of Eu 3+ ions at the surface region.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
